Si photodiodes with preamp S9295 series Large area photodiode integrated with op amp and TE-cooler The S9295 series is a thermoelectrically cooled Si photodiode with preamp developed for low-light-level detection. A large area photodiode, op amp, TE-cooler and feedback resistor (10 GΩ) are integrated into a single package. A thermistor is also included in the same package for temperature control so that the photodiode and I-V conversion circuit can be cooled for stable operation. The S9295 series also features low noise and low NEP, and is especially suitable for NOx detection. The photosensitive area of the photodiode is internally connected to the GND terminal making it highly resistant to EMC noise. Features Applications Large photosensitive area: 10 × 10 mm NOx detection UV to NIR Si photodiode optimized for precision photometry Low-light-level measurement, etc. Compact hermetic package with sapphire window High precision FET input operational amplifier High gain: Rf=10 GΩ Low noise and NEP High cooling efficiency S9295 : ΔT=50 °C S9295-01: ΔT=30 °C High stability with thermistor Highly resistant to EMC noise The S9295 series may be damaged by Electro Static Discharge, etc. Please see Precautions in P.6. Absolute maximum ratings Parameter Supply voltage (preamp) Operating temperature Storage temperature TE-cooler allowable voltage*1 TE-cooler allowable current Thermistor power dissipation Symbol Vcc Topr Tstg Vte Ite Pth Recommended operating conditions Value ±20 V -30 to +60 °C -40 to +80 °C 5 V*2 1A 0.2 mW Parameter Supply voltage (preamp) TE-cooler current Thermistor power dissipation Load resistance Symbol Vcc Ite Pth RL Value ±5 to ±15 V 0.8 A max. 0.03 mW max. 100 kΩ min. *1: Ripple max.: 10% *2: S9295-01: 3.7 V Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. www.hamamatsu.com 1 Si photodiodes with preamp S9295 series Electrical and optical characteristics (Typ. Vcc=±15 V, RL=1 MΩ) Parameter Symbol Spectral response range Peak sensitivity wavelength Feedback resistance (built-in)*3 λ λp Rf Photosensitivity S Output noise voltage Noise equivalent power Output offset voltage Cutoff frequency Output voltage swing Supply current Thermistor resistance S9295 Td=-25 °C Condition 190 to 1100 960 10 0.9 5.1 λ=200 nm λ=λp Dark state, f=10 Hz λ=λp, f=10 Hz Dark state -3 dB Vn NEP Vos fc Vo Icc Rth S9295-01 Td=-5 °C nm nm GΩ V/nW 20 4 25 5 μV rms/Hz1/2 fW/Hz1/2 mV Hz V mA kΩ ±2 190 180 13 0.3 Dark state Unit 86 30 *3: Custom devices are available with different Rf values and/or internal Cf, etc. Spectral response Frequency response (Typ. Vcc=±15 V) 6 (Typ. Vcc=±15 V) 10 S9295 (Td=-25 °C) 0 Relative output (dB) Photosensitivity (V/nW) 5 4 3 S9295 (Td=-25 °C) S9295-01 (Td=-5 °C) 2 -10 -20 S9295-01 (Td=-5 °C) 1 0 200 400 600 800 1000 Wavelength (nm) -30 10 100 1000 10000 Frequency (Hz) KSPDB0228EA KSPDB0229EA 2 Si photodiodes with preamp S9295 series NEP vs. frequency Output noise voltage vs. frequency (Typ. Vcc=±15 V) NEP (fW/Hz1/2) S9295-01 (Td=-5 °C) 102 S9295 (Td=-25 °C) 10 1 100 (Typ. Vcc=±15 V) -3 10 Output noise voltage (V rms/Hz1/2) 3 10 S9295-01 (Td=-5 °C) -4 10 S9295 (Td=-25 °C) 10 -5 10-6 -7 1 10 100 1000 10 10000 1 10 Frequency (Hz) 100 1000 10000 Frequency (Hz) KSPDB0230EB KSPDB0231EA Element temperature vs. TE-cooler current S9295 S9295-01 5 20 Vte vs. Ite 10 4 Td vs. Ite 0 3 -10 2 -20 1 -30 0 0.2 0.4 0.6 0.8 0 1.0 TE-cooler current Ite (A) (Typ. Ta=25 °C) 6 5 Td vs. Ite 10 4 Vte vs. Ite 0 3 -10 2 -20 1 -30 0 0.2 0.4 0.6 0.8 TE-cooler voltage Vte (V) 30 Element temperature Td (°C) Element temperature Td (°C) 20 6 TE-cooler voltage Vte (V) (Typ. Ta=25 °C) 30 0 1.0 TE-cooler current Ite (A) KSPDB0151EB KSPDB0172EB 3 Si photodiodes with preamp S9295 series External connection TE-cooler + Vcc + Rf=10 GΩ Thermistor TE-cooler S9295: Two-stage S9295-01: One-stage Package Out Photodiode + GND Case Vcc- NC KSPDC0047EA Thermistor resistance vs. temperature (Typ.) 120 Thermistor resistance (kΩ) 100 80 60 40 20 0 -30 -20 -10 0 10 20 30 Temperature (°C) KSPDB0152EA 4 Si photodiodes with preamp S9295 series Dimensional outlines (unit: mm) S9295-01 42.0 ± 0.4 42.0 ± 0.4 34.0 ± 0.2 34.0 ± 0.2 ϕ24.3 ± 0.2 ϕ24.3 ± 0.2 Photosensitive area Window ϕ16.0 ± 0.2 (2 ×)ϕ4 7.0 ± 0.3 17.8 ± 0.3 17.8 ± 0.3 Index mark 7.6 ± 0.3 Index mark (4.7) Photosensitive surface ϕ1.0 Lead 0.9 ± 0.2 Sapphire window (t=0.5) 19 ± 1 6.0 0.9 ± 0.2 Sapphire window (t=0.5) 19 ± 1 13.5 ± 0.3 ϕ27.4 ± 0.3 ϕ27.4 ± 0.3 (2 ×)ϕ4 Photosensitive surface ϕ1.0 Lead Window ϕ16.0 ± 0.2 7.6 ± 0.3 Photosensitive area S9295 KSPDA0079EB KSPDA0071EC A tantalum or ceramic capacitor of 0.1 to 10 μF must be connected to the supply voltage leads (pins and ) as a bypass capacitor used to prevent the device from oscillation. 5 Si photodiodes with preamp S9295 series Precautions ESD The S9295 series may be damaged or their performance may deteriorate by such factors as electro static discharge from the human body, surge voltage from measurement equipment, leakage voltages from soldering irons and packing materials. As a countermeasure against electro static discharge, the device, operator, work place and measuring jigs must all be set at the same potential. The following precautions must be observed during use: ∙ To protect the device from electro static discharge which accumulate on the operator or the operator,s clothes, use a wrist strap or similar tools to ground the operator,s body via a high impedance resistor (1 MΩ). ∙ A semiconductive sheet (1 MΩ to 10 MΩ) should be laid on both the work table and the floor in the work area. ∙ When soldering, use an electrically grounded soldering iron with an isolation resistance of more than 10 MΩ. ∙ For containers and packing, use of a conductive material or aluminum foil is effective. When using an antistatic material, use one with a resistance of 0.1 MΩ/cm2 to 1 GΩ/cm2. Strength ∙ Thermoelectrically-cooler devices may be damaged if subjected to shock, for example drop impact. Take sufficient care when handling these devices. Lead forming ∙ When forming the leads, take care not to apply excessive force to the lead sealing glass. Excessive force may impair the hermetic sealing, possibly degrading the cooling capacity. To form the leads, hold the roots of the leads securely with a pair of pliers and bend them. Heatsink ∙ Use a heatsink with thermal resistance less than 1.3 °C/W. Apply thermal grease between the heatsink and detector package, and then fasten them with the screws. Be careful not to give any excessive force or mechanical stress to the detector package at this point. Wiring ∙ Be careful not to misconnect the plus and minus leads of the thermoelectric cooler or preamplifier. Supplying a voltage or current while these connections are reversed may damage the device. ∙ The feedback resistor integrated into S9295 series is high so it is susceptible to external noise. Always ground the case terminal when using S9295. Against UV light exposure ∙ When UV light irradiation is applied, the product characteristics may degrade. Such examples include degradation of the product’s UV sensitivity and increase in dark current. This phenomenon varies depending on the irradiation level, irradiation intensity, usage time, and ambient environment and also varies depending on the product model. Before employing the product, we recommend that you check the tolerance under the ultraviolet light environment that the product will be used in. ∙ Exposure to UV light may cause the characteristics to degrade due to gas released from the resin bonding the product’s component materials. As such, we recommend that you avoid applying UV light directly on the resin and apply it on only the inside of the photosensitive area by using an aperture or the like. 6 Si photodiodes with preamp S9295 series Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Metal, ceramic, plastic package products Technical information ∙ Si photodiode/Application circuit examples Information described in this material is current as of October, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KSPD1064E03 Oct. 2015 DN 7