2sd2382 ds en

Power Transistor 2SD2382
ICBO
IEBO
VCEO
hFE
VCE (sat)
VFEC
Es/b
(Ta=25ºC)
Unit
µA
µA
V
Ratings
10max
10max
60 to 70
700 to 3000
0.15max
1.5max
200min
External Dimensions TO220F (full-mold)
10.0
4.2
2.8
3.3
C0.5
V
V
mJ
16.9
Test Conditions
VCB = 60V
VEB = 6V
IC = 50mA
VCE = 1V, IC = 1A
IC = 1.5A, IB = 15mA
IFEC = 6A
L = 10mH, single pulse
8.4
Symbol
Unit
V
V
V
A
A
W
ºC
ºC
a
b
2.6
0.8
1.35
1.35
0.85
Typical Switching Characteristics
VCC
(V)
12
RL
(Ω)
12
IC
(A)
1
VBB1
(V)
10
VBB2
(V)
–5
IB1
(mA)
30
IB2
(mA)
–30
t on
(µs)
0.25
t stg
(µs)
0.8
tf
(µs)
0.35
2.54
(13.5)
Ratings
65±5
65±5
6
±6 (pulse ±10)
1
30 (Tc=25ºC)
150
–55 to +150
3.9
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
4
Electrical Characteristics
Absolute Maximum Ratings (Ta=25ºC)
0.45
2.54
2.2
a) Part No.
b) Lot No.
B C E
(Unit: mm)
■ IC — VCE Characteristics (typ.)
10
■ VCE (sat) — IB Temperature Characteristics (typ.)
20mA
■ IC — VBE Temperature Characteristics (typ.)
(IC = 1.5A)
0.75
6
30mA
5
8
5mA
4
3mA
2
0
4
0.5
IC (A)
VCE (sat) (V)
IC (A)
10mA
6
Ta = –55ºC
25ºC
75ºC
125ºC
0.25
2
IB = 1mA
0
1
2
3
4
Ta=55ºC
25ºC
75ºC
125ºC
3
1
0
5
1
5
10
VCE (V)
50 100
0
400
0
0.5
1.0
IB (mA)
■ hFE — IC Characteristics (typ.)
(VCE = 1V)
5000
1.5
VBE (V)
■ hFE — IC Temperature Characteristics (typ.)
■
j-a — t
(VCE = 1V)
5000
Characteristics
5
1000
500
Ta = –55ºC
25ºC
75ºC
125ºC
100
100
0.05 0.1
0.5
1
5
10
50
30
0.01
0.05 0.1
0.5
IC (A)
5
10
0.3
1
5
10
50 100
■ PC — Ta Derating
20
30
natural air cooling
Silicone grease
Aluminum heatsink
Unit: mm
c
mse
0.5
ec
1ms c
e
10
10
0m
10
D.
C
at
si
nk
IC (A)
Without heatsink
natural air cooling
5
he
10
0.5
ite
15
0
100 • 150
•
•1
00 2
•2
50 • 5
0•2
fin
)
in
ºC
1
20
ith
25
W
c
=
se
(T
c
10
ms
5
Typ
15
500 1000
t (ms)
■ Safe Operating Area (single pulse)
(VCE = 1V)
25
20
1
IC (A)
■ f T — IE Characteristics (typ.)
30
0.5
PC (W)
50
30
0.01
1
j-a
hFE
hFE
500
fT (MHz)
(ºC/W)
Typ
1000
Without heatsink
0
–0.01
0.1
–0.05 –0.1
–0.5 –1
IE (A)
90
–5 –10
1
5
10
VCE (V)
50
100
0
0
50
100
Ta (ºC)
150
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