Power Transistor 2SD2382 Test Conditions VCB = 60V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA IFEC = 6A L = 10mH, single pulse ICBO IEBO VCEO hFE VCE (sat) VFEC Es/b (Ta=25ºC) Unit µA µA V Ratings 10max 10max 60 to 70 700 to 3000 0.15max 1.5max 200min External Dimensions FM20 (full-mold) 10.0 4.2 2.8 3.3 C0.5 V V mJ 16.9 Symbol 8.4 Unit V V V A A W ºC ºC a b 2.6 0.8 1.35 1.35 0.85 Typical Switching Characteristics VCC (V) 12 RL (Ω) 12 IC (A) 1 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 30 IB2 (mA) –30 t on (µs) 0.25 t stg (µs) 0.8 tf (µs) 0.35 2.54 (13.5) Ratings 65±5 65±5 6 ±6 (pulse ±10) 1 30 (Tc=25ºC) 150 –55 to +150 3.9 Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 4 Electrical Characteristics Absolute Maximum Ratings (Ta=25ºC) 0.45 2.54 2.2 a) Type No. b) Lot No. B C E (Unit: mm) ■ IC — VCE Characteristics (typ.) 10 ■ IC — VBE Temperature Characteristics (typ.) ■ VCE (sat) — IB Temperature Characteristics (typ.) (IC = 1.5A) 0.75 20mA 6 30mA 5 8 5mA 4 3mA 2 0 4 0.5 IC (A) VCE (sat) (V) IC (A) 10mA 6 Ta = –55ºC 25ºC 75ºC 125ºC 0.25 2 IB = 1mA 0 1 2 3 4 Ta=55ºC 25ºC 75ºC 125ºC 3 1 0 5 1 5 10 50 100 0 400 0 0.5 IB (mA) VCE (V) ■ hFE — IC Characteristics (typ.) ■ hFE — IC Temperature Characteristics (typ.) (VCE = 1V) 5000 1.0 1.5 VBE (V) ■ j-a — t (VCE = 1V) 5000 Characteristics 5 Ta = –55ºC 25ºC 75ºC 125ºC 100 100 0.05 0.1 0.5 1 5 10 50 30 0.01 0.05 0.1 IC (A) 10 0.3 1 5 10 50 100 ■ PC — Ta Derating 30 natural air cooling Silicone grease Aluminum heatsink Unit: mm 10 c mse 0.5 ec 1ms ec c se 0m 10 10 (T c k sin at Without heatsink natural air cooling 5 he 10 0.5 ite 15 0 100 • 150 • •1 00 2 •2 50 • 5 0•2 fin 10 25 ºC ) in 1 20 ith = W IC (A) ms D. C Typ 15 500 1000 t (ms) 20 5 fT (MHz) 5 ■ Safe Operating Area (single pulse) (VCE = 1V) 25 20 1 IC (A) ■ f T — IE Characteristics (typ.) 30 0.5 0.5 PC (W) 50 30 0.01 1 j-a hFE 500 hFE 1000 500 (ºC/W) Typ 1000 Without heatsink 0 –0.01 0.1 –0.05 –0.1 –0.5 –1 IE (A) –5 –10 1 5 10 VCE (V) 50 100 0 0 50 100 150 Ta (ºC) 59