Schottky Barrier Diodes (SBD) MA4X724 (MA724) Silicon epitaxial planar type Unit: mm 2.90+0.02 –0.05 For super high speed switching For small current rectification 1.9±0.2 0.16+0.1 –0.06 (0.95) (0.95) 4 2 5° 0.5R 2.8+0.2 –0.3 3 1 (0.65) (0.2) 0.60+0.10 –0.05 0.4±0.2 • Two isolated elements are contained in one package, allowing high-density mounting • Two MA3X721 (MA721) is contained in one package (of a type in the same direction) • IF(AV) = 200 mA rectification is possible • Mini type 4-pin package 1.50+0.25 –0.05 ■ Features Parameter Reverse voltage (DC) Repetitive peak reverse-voltage Peak forward Single current Double *1 Average forward Single current Double Non-repetitive peak Single Symbol Rating Unit VR 30 V VRRM 30 V IFM 300 mA +0.2 0 to 0.1 1.1–0.1 ■ Absolute Maximum Ratings Ta = 25°C IF(AV) 200 mA Internal Connection 150 IFSM 1 forward-surge-current *2 Double *1 1 : Cathode 1 2 : Cathode 2 3 : Anode 2 4 : Anode 1 EIAJ : SC-61 Mini4-G1 Package Marking Symbol: M1T 225 *1 1.1+0.3 –0.1 10° A 3 4 2 1 0.75 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note) *1: Value per chip *2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive) ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit 50 µA Reverse current (DC) IR VR = 30 V Forward voltage (DC) VF IF = 200 mA Terminal capacitance Ct VR = 0 V, f = 1 MHz 30 pF Reverse recovery time * trr IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 3.0 ns 0.55 V Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 1 GHz 3. *: trr measuring instrument Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω Publication date: August 2001 Wave Form Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Ω Note) The part number in the parenthesis shows conventional part number. SKH00105AED 1 MA4X724 IF V F IR V R 103 VF Ta 105 0.5 100°C 25°C 10 1 10−1 10−2 Ta = 150°C 104 103 100°C 102 25°C 10 0 0.2 0.4 0.6 1 0.8 0 Forward voltage VF (V) 5 IR T a VR = 30 V Terminal capacitance Ct (pF) Reverse current IR (µA) 20 5V 1V 102 40 80 30 120 160 Ambient temperature Ta (°C) 200 f = 1 MHz Ta = 25°C 20 10 0 5 10 15 20 25 Reverse voltage VR (V) SKH00105AED 0.3 100 mA 0.2 0 −40 10 mA 0 40 80 120 160 Ambient temperature Ta (°C) 30 0 0 25 Ct VR 10 2 15 40 103 1 −40 10 IF = 200 mA 0.1 Reverse voltage VR (V) 105 104 0.4 Forward voltage VF (V) −20°C Reverse current IR (µA) Forward current IF (mA) 102 Ta = 150°C 30 200 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.