Data Sheet

DF
N1
01
0B
-6
PQMD3
NPN/PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 10 kΩ
26 October 2015
Product data sheet
1. General description
NPN/PNP double Resistor-Equipped Transistors (RET) in a leadless ultra small
DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package.
NPN/NPN complement: PQMH11
PNP/PNP complement: PQMB11
2. Features and benefits
•
•
•
•
•
•
•
100 mA output current capability
Built-in bias resistors
Simplifies circuit design
Low package height of 0.37 mm
Reduces component count
Reduces pick and place costs
AEC-Q101 qualified
3. Applications
•
•
•
•
Low current peripheral driver
Control of IC inputs
Replaces general-purpose transistors in digital applications
Mobile applications
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
-
-
50
V
-
-
100
mA
[1]
7
10
13
kΩ
[1]
0.8
1
1.2
Per transistor; for the PNP transistor with negative polarity
VCEO
collector-emitter
voltage
IO
output current
open base
Per transistor; for the PNP transistor with negative polarity
R1
bias resistor 1
R2/R1
bias resistor ratio
[1]
Tamb = 25 °C
See section "Test information" for resistor calculation and test conditions.
Scan or click this QR code to view the latest information for this product
PQMD3
NXP Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
GND1
Simplified outline
Graphic symbol
GND (emitter) TR1
O1
1
2
I1
input ( base) TR1
3
O2
output (collector) TR2
4
GND2
GND (emitter) TR2
5
I2
input ( base) TR2
6
O1
output (collector) TR1
Transparent top view
7
O1
output (collector) TR1
DFN1010B-6 (SOT1216)
8
O2
output (collector) TR2
7
2
3
R1
5
8
I2
GND2
6
4
R2
TR2
TR1
R2
GND1
R1
I1
O2
aaa-007379
6. Ordering information
Table 3.
Ordering information
Type number
PQMD3
PQMD3
Product data sheet
Package
Name
Description
Version
DFN1010B-6
DFN1010B-6: plastic thermal enhanced ultra thin small
outline package; no leads; 6 terminals
SOT1216
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PQMD3
NXP Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
7. Marking
Table 4.
Marking codes
Type number
Marking code
PQMD3
A 111
MARKING CODE
(EXAMPLE)
READING
DIRECTION
MARK-FREE AREA
PIN 1
INDICATION MARK
READING EXAMPLE:
YEAR DATE CODE
A 110
VENDOR CODE
Fig. 1.
aaa-019766
DFN1010B-6 (SOT1216) binary marking code description
PQMD3
Product data sheet
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PQMD3
NXP Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor; for the PNP transistor with negative polarity
VCBO
collector-base voltage
open emitter
-
50
V
VCEO
collector-emitter voltage
open base
-
50
V
VEBO
emitter-base voltage
open collector
-
10
V
VI
input voltage
TR1; positive
-
40
V
TR1; negative
-
-10
V
TR2; positive
-
10
V
TR2; negative
-
-40
V
-
100
mA
-
100
mA
IO
output current
ICM
peak collector current
tp ≤ 1 ms; single pulse
Ptot
total power dissipation
Tamb ≤ 25 °C
[1]
-
230
mW
Ptot
total power dissipation
Tamb ≤ 25 °C
[1]
-
350
mW
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
Per device
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
aaa-007377
400
Ptot
(mW)
300
200
100
0
-75
-25
25
75
125
175
Tamb (°C)
FR4 PCB, standard footprint
Fig. 2.
Per device: Power derating curve
PQMD3
Product data sheet
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PQMD3
NXP Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
thermal resistance
from junction to
ambient
in free air
thermal resistance
from junction to
ambient
in free air
Min
Typ
Max
Unit
[1]
-
-
543
K/W
[1]
-
-
357
K/W
Per transistor
Rth(j-a)
Per device
Rth(j-a)
[1]
103
Zth(j-a)
(K/W)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
aaa-007378
duty cycle =
0.75
1
0.5
0.33
0.2
102
0.1
0.05
10
0.02
0.01
0
1
10-5
10-4
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 3.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PQMD3
Product data sheet
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PQMD3
NXP Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
-
-
100
nA
Per transistor; for the PNP transistor with negative polarity
ICBO
collector-base cut-off
current (emitter open)
VCB = 50 V; IE = 0 A; Tamb = 25 °C
ICEO
collector-emitter cut-off VCE = 30 V; IB = 0 A; Tamb = 25 °C
current (base open)
VCE = 30 V; IB = 0 A; Tamb = 150 °C
-
-
1
µA
-
-
5
µA
IEBO
emitter-base cut-off
VEB = 5 V; IC = 0 A; Tamb = 25 °C
current (collector open)
-
-
400
µA
hFE
DC current gain
VCE = 5 V; IC = 5 mA; Tamb = 25 °C
30
-
-
VCEsat
collector-emitter
saturation voltage
IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C
-
-
150
mV
VI(off)
off-state input voltage
VCE = 5 V; IC = 100 µA; Tamb = 25 °C
-
1.1
0.8
V
VI(on)
on-state input voltage
VCE = 0.3 V; IC = 10 mA; Tamb = 25 °C
2.5
1.8
-
V
R1
bias resistor 1
Tamb = 25 °C
[1]
7
10
13
kΩ
R2/R1
bias resistor ratio
[1]
0.8
1
1.2
CC
collector capacitance
-
-
2.5
pF
-
-
3
pF
[2]
-
230
-
MHz
[2]
-
180
-
MHz
VCB = 10 V; IE = 0 A; f = 1 MHz;
Tamb = 25 °C; TR1 (NPN)
VCB = -10 V; IE = 0 A; f = 1 MHz;
Tamb = 25 °C; TR2 (PNP)
fT
transition frequency
VCE = 5 V; IC = 10 mA; f = 100 MHz;
Tamb = 25 °C; TR1 (NPN)
VCE = -5 V; IC = -10 mA; f = 100 MHz;
Tamb = 25 °C; TR2 (PNP)
[1]
[2]
PQMD3
Product data sheet
See section "Test information" for resistor calculation and test conditions.
Characteristics of built-in transistor
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PQMD3
NXP Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
006aac768
103
hFE
0.60 mA
0.54 mA
0.48 mA
IC
(A)
(1)
(2)
(3)
102
aaa-018663
0.1
0.08
0.42 mA
0.36 mA
0.06
0.30 mA
0.24 mA
0.04
0.18 mA
10
0.12 mA
0.02
1
10-1
1
10
IC (mA)
0
102
VCE = 5 V
0
1
2
3
4
VCE (V)
5
Tamb = 25 °C
(1) Tamb = 100 °C
Fig. 5.
(2) Tamb = 25 °C
NPN transistor: Collector current as a function
of collector-emitter voltage; typical values
(3) Tamb = -40 °C
Fig. 4.
IB = 0.06 mA
NPN transistor: DC current gain as a function of
collector current; typical values
006aac769
1
006aac770
10
VCEsat
(V)
VI(on)
(V)
(1)
(2)
10-1
1
(1)
(3)
(2)
(3)
10-2
Fig. 6.
1
10
IC (mA)
10-1
10-1
102
1
IC/IB = 20
VCE = 0.3 V
(1) Tamb = 100 °C
(1) Tamb = -40 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = -40 °C
(3) Tamb = 100 °C
NPN transistor: Collector-emitter saturation
voltage as a function of collector current;
typical values
PQMD3
Product data sheet
Fig. 7.
IC (mA)
102
NPN transistor: On-state input voltage as a
function of collector current; typical values
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PQMD3
NXP Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
006aac771
10
006aac772
3
Cc
(pF)
VI(off)
(V)
2
(1)
(2)
1
(3)
1
10-1
10-1
1
IC (mA)
0
10
VCE = 5 V
10
20
30
40
50
VCB (V)
f = 1 MHz; Tamb = 25 °C
(1) Tamb = -40 °C
Fig. 9.
(2) Tamb = 25 °C
NPN transistor: Collector capacitance as a
function of collector-base voltage; typical
values
(3) Tamb = 100 °C
Fig. 8.
0
NPN transistor: Off-state input voltage as a
function of collector current; typical values
006aac757
103
006aac773
103
hFE
fT
(MHz)
(1)
(2)
(3)
102
102
10
10
10-1
1
10
IC (mA)
1
-10-1
102
VCE = 5 V; Tamb = 25 °C
-1
-10
IC (mA)
-102
VCE = -5 V
(1) Tamb = 100 °C
Fig. 10. NPN transistor: Transition frequency as a
function of collector current; typical values of
built-in transistor
(2) Tamb = 25 °C
(3) Tamb = -40 °C
Fig. 11. PNP transistor: DC current gain as a function of
collector current; typical values
PQMD3
Product data sheet
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PQMD3
NXP Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
aaa-017927
-0.1
IC
(A)
-0.80 mA
-0.72 mA
-0.08
-0.64 mA
aaa-017926
-1
VCEsat
(V)
-0.56 mA
-0.48 mA
-0.06
-0.40 mA
-10-1
-0.32 mA
-0.04
(1)
(2)
-0.24 mA
(3)
-0.16 mA
-0.02
IB = -0.08 mA
0
0
-1
-2
-3
-4
VCE (V)
-10-2
-5
Tamb = 25 °C
-1
-10
IC (mA)
-102
IC/IB = 20
(1) Tamb = 100 °C
Fig. 12. PNP transistor: Collector current as a function
of collector-emitter voltage; typical values
(2) Tamb = 25 °C
(3) Tamb = -40 °C
Fig. 13. PNP transistor: Collector-emitter saturation
voltage as a function of collector current;
typical values
006aac775
-10
006aac776
-10
VI(on)
(V)
VI(off)
(V)
(1)
(1)
(2)
-1
-10-1
-10-1
(2)
-1
(3)
-1
-10
IC (mA)
-10-1
-10-1
-102
VCE = -0.3 V
VCE = -5 V
(1) Tamb = -40 °C
(1) Tamb = -40 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(3) Tamb = 100 °C
Fig. 14. PNP transistor: On-state input voltage as a
function of collector current; typical values
PQMD3
Product data sheet
(3)
-1
IC (mA)
-10
Fig. 15. PNP transistor: Off-state input voltage as a
function of collector current; typical values
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PQMD3
NXP Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
006aac777
6
006aac763
103
Cc
(pF)
fT
(MHz)
4
102
2
0
0
-10
-20
-30
10
-10-1
-40
-50
VCB (V)
f = 1 MHz; Tamb = 25 °C
-1
-10
IC (mA)
-102
VCE = -5 V; Tamb = 25 °C
Fig. 16. PNP transistor: Collector capacitance as a
function of collector-base voltage; typical
values
Fig. 17. PNP transistor: Transition frequency as a
function of collector current; typical values of
built-in transistor
11. Test information
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
11.2 Resistor calculation
• Calculation of bias resistor 1 (R1)
•
PQMD3
Product data sheet
Calculation of bias resistor ratio (R2/R1)
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PQMD3
NXP Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
n.c.
II1; II2
R1
II3; II4
R2
GND
aaa-020082
Fig. 18. NPN transistor: Resistor test circuit
n.c.
II1; II2
R1
II3; II4
R2
GND
aaa-020083
Fig. 19. PNP transistor: Resistor test circuit
11.3 Resistor test conditions
Table 8.
Resistor test conditions
Per transistor; for the PNP transistor with negative polarity
R1 (kΩ)
10
PQMD3
Product data sheet
R2 (kΩ)
10
Test conditions
II1
II2
II3
II4
350 μA
450 μA
-350 μA
-450 μA
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PQMD3
NXP Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
12. Package outline
0.35
0.35
0.15
0.23
1
3
0.125
0.205
0.22
0.30
0.95
1.05
6
0.04
max
2
0.34
0.40
Dimensions in mm
5
4
0.32
0.40
0.275 0.275
1.05
1.15
13-03-05
Fig. 20. Package outline DFN1010B-6 (SOT1216)
PQMD3
Product data sheet
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PQMD3
NXP Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
13. Soldering
Footprint information for reflow soldering of DFN1010B-6 package
SOT1216
0.9
0.35
0.35
0.15 0.2 (6x) 0.15
1.3
1.2
0.35
0.25
0.5
0.6
0.35
0.25
1.1
0.3 (6x)
1
1.35
solder land
solder land plus solder paste
occupied area
solder resist
Dimensions in mm
Issue date
13-03-06
14-07-28
sot1216_fr
Fig. 21. Reflow soldering footprint for DFN1010B-6 (SOT1216)
PQMD3
Product data sheet
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PQMD3
NXP Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
14. Revision history
Table 9.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PQMD3 v.1
20151026
Product data sheet
-
-
PQMD3
Product data sheet
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PQMD3
NXP Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
15. Legal information
15.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
Definition
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
[2]
[3]
15.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
15.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
PQMD3
Product data sheet
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the NXP Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
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and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
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PQMD3
NXP Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
No offer to sell or license — Nothing in this document may be interpreted
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grant, conveyance or implication of any license under any copyrights, patents
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Translations — A non-English (translated) version of a document is for
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15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,
MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PQMD3
Product data sheet
All information provided in this document is subject to legal disclaimers.
26 October 2015
© NXP Semiconductors N.V. 2015. All rights reserved
16 / 17
PQMD3
NXP Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 3
8
Limiting values .......................................................4
9
Thermal characteristics .........................................5
10
Characteristics ....................................................... 6
11
11.1
11.2
11.3
Test information ................................................... 10
Quality information ............................................. 10
Resistor calculation ............................................ 10
Resistor test conditions ...................................... 11
12
Package outline ................................................... 12
13
Soldering .............................................................. 13
14
Revision history ................................................... 14
15
15.1
15.2
15.3
15.4
Legal information .................................................15
Data sheet status ............................................... 15
Definitions ...........................................................15
Disclaimers .........................................................15
Trademarks ........................................................ 16
© NXP Semiconductors N.V. 2015. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 26 October 2015
PQMD3
Product data sheet
All information provided in this document is subject to legal disclaimers.
26 October 2015
© NXP Semiconductors N.V. 2015. All rights reserved
17 / 17