TSM19N20 200V N-Channel Power MOSFET TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features VDS (V) RDS(on)(mΩ) ID (A) 200 92 @ VGS =10V 18 Block Diagram ● Advanced Trench Technology ● Low RDS(ON) 92mΩ (Max.) ● Low gate charge typical @ 55nC (Typ.) ● Low Crss typical @ 73pF (Typ.) Part No. Package Packing TSM19N20CP ROG TO-252 2.5Kpcs / 13” Reel en Note: “G” denote for Halogen Free Product de d Ordering Information mm N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Symbol Limit Unit VDS 200 V VGS ±20 V Continuous Drain Current @ TC=25°C ID 18 A Drain Current Pulsed (Note 1) IDM 72 A Avalanche Current IAS 8 A Avalanche Energy, L=10mH EAS 320 mJ Maximum Power Dissipation @ TC=25°C PD 48 W Storage Temperature Range TSTG -55 to +150 °C TJ -55 to +150 °C Symbol Limit Unit RӨJC 2.6 o 50 o eco Parameter Drain-Source Voltage No tR Gate-Source Voltage Operating Junction Temperature Range * Limited by maximum junction temperature Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient RӨJA C/W C/W Notes: Surface mounted on FR4 board t ≤ 10sec 1/4 Version: A12 TSM19N20 200V N-Channel Power MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 200 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 10A RDS(ON) -- 80 92 mΩ Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 2 -- 4 V Zero Gate Voltage Drain Current VDS = 160V, VGS = 0V IDSS -- -- 1 uA Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Qg -- 55 -- Qgs -- 18 -- Qgd -- 17 -- VDS = 100V, ID = 10A, Gate-Source Charge VGS = 10V Gate-Drain Charge Input Capacitance VDS = 30V, VGS = 0V, Output Capacitance -- 145 -- Crss -- 73 -- -- 17 -- tr -- 12 -- td(off) -- 28 -- tf -- 10 -- VSD -- -- 1.3 V tfr -- 82 -- nS en Reverse Transfer Capacitance f = 1.0MHz 2300 -- Ciss Switching td(on) mm Turn-On Delay Time Turn-On Rise Time VGS = 10V, VDS = 100V, Turn-Off Delay Time RG = 3Ω Turn-Off Fall Time -- nC Coss de Total Gate Charge d Dynamic pF nS Reverse Recovery Time VGS=0V, IS=10A tR Drain-Source Diode Forward Voltage eco Drain-Source Diode Characteristics and Maximum Rating o IS = 10A, TJ=25 C No dI/dt = 100A/us Reverse Recovery Charge Qfr -276 -nC Notes: 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 2. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. RθJA shown below for single device operation on FR-4 in still air 2/4 Version: A12 TSM19N20 200V N-Channel Power MOSFET Unit: Millimeters No tR eco mm en de d TO-252 Mechanical Drawing 3/4 Version: A12 TSM19N20 No tR eco mm en de d 200V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: A12