VS-HFA90NH40PbF www.vishay.com Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 210 A FEATURES • Very low Qrr and trr Lug terminal anode • Designed and qualified for industrial level • UL approved file E222165 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Base cathode HALF-PAK (D-67) BENEFITS • Reduced RFI and EMI • Reduced snubbing PRODUCT SUMMARY DESCRIPTION IF (maximum) 210 A VR 400 V IF(DC) at TC 106 A at 100 °C Package HALF-PAK (D-67) Circuit Single diode HEXFRED® diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and dIF/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage VR Continuous forward current IF TEST CONDITIONS VALUES UNITS 400 V TC = 25 °C 210 TC = 100 °C 106 Single pulse forward current IFSM Limited by junction temperature 600 Non-repetitive avalanche energy EAS L = 100 μH, duty cycle limited by maximum TJ 1.4 Maximum power dissipation PD Operating junction and storage temperature range TC = 25 °C 329 TC = 100 °C 132 TJ, TStg A mJ W -55 to +150 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage SYMBOL VBR TEST CONDITIONS IR = 100 μA IF = 90 A Maximum forward voltage VFM IF = 180 A See fig. 1 IF = 90 A, TJ = 125 °C MIN. TYP. MAX. 400 - - - 1.06 1.45 - 1.2 1.67 - 0.96 1.23 UNITS V Maximum reverse leakage current IRM TJ = 125 °C, VR = 400 V See fig. 2 - 0.6 2 mA Junction capacitance CT VR = 200 V See fig. 3 - 180 260 pF Series inductance LS From top of terminal hole to mounting plane - 7.0 - nH Revision: 19-Mar-15 Document Number: 94044 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA90NH40PbF www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time See fig. 5 trr Peak recovery current See fig. 6 IRRM Reverse recovery charge See fig. 7 TEST CONDITIONS TYP. MAX. - 90 140 TJ = 125 °C - 158 240 - 9 17 - 15 30 - 420 1100 TJ = 125 °C - 1200 3200 TJ = 25 °C - 370 - TJ = 125 °C - 270 - TJ = 25 °C IF = 90 A dIF/dt = 200 A/μs VR = 200 V TJ = 125 °C TJ = 25 °C Qrr Peak rate of recovery current See fig. 8 MIN. TJ = 25 °C dI(rec)M/dt UNITS ns A nC A/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg VALUES UNITS -55 to 150 °C Maximum thermal resistance, junction to case RthJC DC operation See fig. 4 0.38 Typical thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased 0.05 °C/W Approximate weight minimum Mounting torque Terminal torque Non-lubricated threads 1.06 oz. 3 (26.5) 4 (35.4) minimum 3.4 (30) maximum N m (lbf in) 5 (44.2) HALF-PAK module 10 000 1000 TJ = 150 °C IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) g maximum Case style 100 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C 1000 TJ = 125 °C 100 10 1 0.1 0.01 TJ = 25 °C 0.001 0.0001 1 94044_01 30 0.0 0.5 1.0 1.5 2.0 2.5 100 3.0 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 94044_02 200 300 400 VR - Reverse Voltage (V) Fig. 2 - Typical Reverse Current vs. Reverse Voltage Revision: 19-Mar-15 Document Number: 94044 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA90NH40PbF www.vishay.com Vishay Semiconductors 100 200 A, 125 °C 90 A, 125 °C 40 A, 125 °C TJ = 25 °C Irrm (A) CT - Junction Capacitance (pF) 10 000 1000 100 10 1 100 1 100 1000 VR - Reverse Voltage (V) 94044_03 dIF/dt (A/µs) Fig. 6 - Typical Recovery Current vs. dIF/dt 160 4500 140 4000 3500 120 3000 Qrr (nC) 100 DC 80 60 2500 2000 200 A, 125 °C 90 A, 125 °C 40 A, 125 °C 200 A, 25 °C 90 A, 25 °C 40 A, 25 °C 1500 40 1000 20 500 0 0 94044_04 50 100 150 200 0 100 250 IF (AV) - DC Forward Current (A) 1000 dIF/dt (A/µs) 94044_07 Fig. 4 - Maximum Allowable Case Temperature vs. DC Forward Current Fig. 7 - Typical Stored Charge vs. dIF/dt 240 10 000 160 dI(rec)M/dt (A/µs) 200 A, 125 °C 90 A, 125 °C 40 A, 125 °C 200 A, 25 °C 90 A, 25 °C 40 A, 25 °C 200 trr (ns) 1000 94044_06 Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Maximum Allowable Case Temperature (°C) 200 A, 25 °C 90 A, 25 °C 40 A, 25 °C 10 120 1000 200 A, 125 °C 90 A, 125 °C 40 A, 125 °C 200 A, 25 °C 90 A, 25 °C 40 A, 25 °C 80 40 100 94044_05 1000 dIF/dt (A/µs) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt 100 100 94044_08 1000 dIF/dt (A/µs) Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt Revision: 19-Mar-15 Document Number: 94044 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA90NH40PbF www.vishay.com Vishay Semiconductors ZthJC - Thermal Response 1 0.1 0.01 0.001 0.00001 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse (thermal response) 0.0001 0.001 0.01 1 0.1 10 t1 - Rectangular Pulse Duration (s) 94044_09 Fig. 9 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 10 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 11 - Reverse Recovery Waveform and Definitions Revision: 19-Mar-15 Document Number: 94044 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA90NH40PbF www.vishay.com Vishay Semiconductors L = 100 µH IL(PK) High-speed switch D.U.T. Freewheel diode Rg = 25 Ω Current monitor + Decay time Vd = 50 V V(AVAL) VR(RATED) Fig. 12 - Avalanche Test Circuit and Waveforms ORDERING INFORMATION TABLE Device code VS- HFA 90 N H 40 PbF 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - HEXFRED® family 3 - Average current rating 4 - N = Not isolated 5 - H = HALF-PAK 6 - Voltage rating (400 V) 7 - Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95020 Revision: 19-Mar-15 Document Number: 94044 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors D-67 HALF-PAK DIMENSIONS in millimeters (inches) 24.4 (0.96) 13 (0.51) 17.5 (0.69) 16.5 (0.65) 5 (0.20) 4 (0.16) 30 ± 0.05 (1.2 ± 0.002) 5 (0.196) + 45° Ø 7.3 ± 0.1 (0.29 ± 0.0039) 21 (0.82) 20 (0.78) Ø 4.3 (Ø 0.169 - 0.1 0.0 - 0.004 ) 0.000 ¼" - 20 UNC 40 MAX. (1.58) Document Number: 95020 Revision: 20-May-09 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000