VS-HFA320NJ40CPbF Datasheet

VS-HFA320NJ40CPbF
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Vishay Semiconductors
HEXFRED®
Ultrafast Soft Recovery Diode, 320 A
FEATURES
Lug
terminal
anode 1
Lug
terminal
anode 2
• Very low Qrr and trr
• UL approved file E222165
• Designed and qualified for industrial level
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
TO-244
Base common
cathode
BENEFITS
• Reduced RFI and EMI
• Reduced snubbing
DESCRIPTION
PRODUCT SUMMARY
IF(AV)
320 A
VR
400 V
IF(DC) at TC
255 A at 85 °C
Package
TO-244 (TO-244AB)
Circuit
Two diodes common cathode
HEXFRED® diodes are optimized to reduce losses and
EMI/RFI in high frequency power conditioning systems. An
extensive characterization of the recovery behavior for
different values of current, temperature and dIF/dt simplifies
the calculations of losses in the operating conditions. The
softness of the recovery eliminates the need for a snubber in
most applications. These devices are ideally suited for
power converters, motors drives and other applications
where switching losses are significant portion of the total
losses.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage
VR
Continuous forward current
IF
TEST CONDITIONS
MAX.
UNITS
400
V
TC = 25 °C
420
TC = 85 °C
255
TC = 115 °C
160
1200
Single pulse forward current
IFSM
Limited by junction temperature
Non-repetitive avalanche energy
EAS
L = 100 μH, duty cycle limited by maximum TJ
1.4
TC = 25 °C
625
TC = 100 °C
250
Maximum power dissipation
Operating junction and storage
temperature range
PD
TJ, TStg
A
mJ
W
-55 to 150
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Cathode to anode
breakdown voltage
VBR
IR = 100 μA
Maximum forward voltage
VFM
IF = 320 A
IF = 160 A
See fig. 1
IF = 160 A, TJ = 125 °C
MIN.
TYP.
MAX.
400
-
-
-
1.10
1.35
-
1.30
1.54
-
1.00
1.20
UNITS
V
Maximum reverse 
leakage current
IRM
TJ = 125 °C, VR = 400 V
See fig. 2
-
0.9
3
Junction capacitance
CT
VR = 200 V
See fig. 3
-
370
500
pF
Series inductance
LS
From top of terminal hole to mounting plane
-
5.0
-
nH
mA
Revision: 26-Mar-14
Document Number: 94072
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VS-HFA320NJ40CPbF
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Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
See fig. 5
trr
Peak recovery current
See fig. 6
TYP.
MAX.
-
45
-
-
90
140
TJ = 125 °C
-
290
440
-
8.7
20
-
18
30
-
420
1100
TJ = 125 °C
-
2600
7000
TJ = 25 °C
-
300
-
TJ = 125 °C
-
280
-
SYMBOL
MIN.
TYP.
MAX.
UNITS
TJ, TStg
-55
-
150
°C
-
-
0.19
-
-
0.095
-
0.10
-
-
68
-
g
oz.
TJ = 25 °C
dI(rec)M/dt
UNITS
TJ = 25 °C
TJ = 125 °C
Qrr
Peak rate of recovery current
See fig. 8
MIN.
TJ = 25 °C
IRRM
Reverse recovery charge
See fig. 7
TEST CONDITIONS
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
IF = 160 A
dIF/dt = 200 A/μs
VR = 200 V
ns
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage temperature range
per leg
Thermal resistance, junction to case
RthJC
per module
Typical thermal resistance, case to heatsink
RthCS
Weight
-
2.4
-
30 (3.4)
-
40 (4.6)
12 (1.4)
-
18 (2.1)
30 (3.4)
-
40 (4.6)
Vertical pull
-
-
80
2" lever pull
-
-
35
Mounting torque (1)
center hole
Terminal torque
°C/W
K/W
N m
(lbf in)
lbf in
10 000
1000
TJ = 150 °C
IR - Reverse Current (µA)
IF - Instantaneous Forward Current (A)
Note
(1) Mounting surface must be smooth, flat, free of burrs or other protrusions. Apply a thin even film or thermal grease to mounting surface.
Gradually tighten each mounting bolt in 5 to 10 lbf in steps until desired or maximum torque limits are reached.

100
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
10
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1000
TJ = 125 °C
100
10
TJ = 25 °C
1
0.1
100
200
300
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current (Per Leg)
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage (Per Leg)
400
Revision: 26-Mar-14
Document Number: 94072
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VS-HFA320NJ40CPbF
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Vishay Semiconductors
CT - Junction Capacitance (pF)
10 000
80
TJ = 125 °C
TJ = 25 °C
70
IRRM (A)
60
TJ = 25 °C
1000
IF = 200 A
IF = 160 A
IF = 70 A
50
40
30
20
10
100
10
100
0
100
1000
1000
VR - Reverse Voltage (V)
dIF/dt (A/µs)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage (Per Leg)
Fig. 6 - Typical Recovery Current vs. dIF/dt (Per Leg)
160
7000
140
6000
120
TJ = 125 °C
TJ = 25 °C
5000
100
Qrr (nC)
Maximum Allowable
Case Temperature (°C)
1
DC
80
60
IF = 200 A
IF = 160 A
IF = 70 A
4000
3000
2000
40
1000
20
0
0
100
200
300
0
100
500
400
1000
IF(AV) - DC Forward Current (A)
dIF/dt (A/µs)
Fig. 4 - Maximum Allowable Case Temperature vs.
DC Forward Current (Per Leg)
Fig. 7 - Typical Stored Charge vs. dIF/dt (Per Leg)
10 000
400
IF = 200 A
IF = 160 A
IF = 70 A
trr (ns)
300
250
200
150
dI(rec)M/dt (A/µs)
350
TJ = 125 °C
TJ = 25 °C
200 A
160 A
70 A
1000
100
TJ = 125 °C
TJ = 25 °C
50
0
100
1000
100
100
1000
dIF/dt (A/µs)
dIF/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg)
Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt (Per Leg)
Revision: 26-Mar-14
Document Number: 94072
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA320NJ40CPbF
www.vishay.com
Vishay Semiconductors
ZthJC - Thermal Response
1
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.01
Single pulse
(thermal response)
0.001
0.00001
0.0001
0.001
0.01
1
0.1
10
t1 - Rectangular Pulse Duration (s)
Fig. 9 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 10 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 11 - Reverse Recovery Waveform and Definitions
Revision: 26-Mar-14
Document Number: 94072
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA320NJ40CPbF
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Vishay Semiconductors
L = 100 µH
IL(PK)
High-speed
switch
D.U.T.
Freewheel
diode
Rg = 25 Ω
+
Current
monitor
Decay
time
Vd = 50 V
V(AVAL)
VR(RATED)
Fig. 12 - Avalanche Test Circuit and Waveforms
ORDERING INFORMATION TABLE
Device code
HFA 320
VS1
2
NJ
40
C
PbF
4
5
6
7
3
1
-
Vishay Semiconductors product
2
-
HEXFRED® family, electron irradiated
3
-
Average current rating
4
-
NJ = TO-244
5
-
Voltage rating (400 V)
6
-
C = Common cathode
7
-
Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95021
Revision: 26-Mar-14
Document Number: 94072
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
TO-244
DIMENSIONS in millimeters (inches)
35 (1.37) REF.
13 (0.51)
7 (0.27)
6 (0.23)
17.5 (0.69)
16.5 (0.65)
40 (1.57)
80 (3.15)
Ø 5.2 (Ø 0.20)
3
12.6 (0.5)
Ø 7.2 (Ø 0.28)
(2 places)
3
1
2
21 (0.82)
20 (0.78)
¼" - 20 UNC
9.6 (0.37) MIN.
93 (3.66) MAX.
Revision: 24-Apr-15
Document Number: 95021
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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