SQD40P10-40L Datasheet

SQD40P10-40L
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Vishay Siliconix
Automotive P-Channel 100 V (D-S) 175 °C MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
PRODUCT SUMMARY
VDS (V)
- 100
RDS(on) () at VGS = - 10 V
0.040
• TrenchFET® Power MOSFET
RDS(on) () at VGS = - 4.5 V
0.048
• Package with Low Thermal Resistance
ID (A)
• AEC-Q101 Qualifiedd
- 38
Configuration
• 100 % Rg and UIS Tested
Single
• Compliant to RoHS Directive 2002/95/EC
S
TO-252
G
Drain Connected to Tab
G
D
D
S
P-Channel MOSFET
Top View
ORDERING INFORMATION
Package
TO-252
Lead (Pb)-free and Halogen-free
SQD40P10-40L-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
VDS
LIMIT
Drain-Source Voltage
Gate-Source Voltage
VGS
± 20
TC = 25 °C
Continuous Drain Current
Continuous Source Current (Diode
ID
TC = 125 °C
Conduction)a
Pulsed Drain Currentb
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationb
L = 0.1 mH
Operating Junction and Storage Temperature Range
V
- 22
- 50
IDM
- 150
IAS
- 44
PD
TC = 125 °C
UNIT
- 38
IS
EAS
TC = 25 °C
- 100
96
136
45
A
mJ
W
TJ, Tstg
- 55 to + 175
°C
SYMBOL
LIMIT
UNIT
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
PCB
Mountc
Junction-to-Case (Drain)
RthJA
50
RthJC
1.1
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
S11-1559-Rev. B 22-Aug-11
1
Document Number: 67022
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD40P10-40L
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Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
VDS
VGS = 0 V, ID = - 250 μA
- 100
-
-
VGS(th)
VDS = VGS, ID = - 250 μA
- 1.0
- 2.0
- 2.5
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
IGSS
Gate-Source Leakage
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward
Transconductanceb
RDS(on)
gfs
VDS = 0 V, VGS = ± 20 V
-
-
± 100
VGS = 0 V
VDS = - 100 V
-
-
-1
VGS = 0 V
VDS = - 100 V, TJ = 125 °C
-
-
- 50
VGS = 0 V
VDS = - 100 V, TJ = 175 °C
-
-
- 250
VGS = - 10 V
VDS- 5 V
- 30
-
-
VGS = - 10 V
ID = - 9.2 A
-
0.033
0.040
VGS = - 10 V
ID = - 9.2 A, TJ = 125 °C
-
-
0.074
VGS = - 10 V
ID = - 9.2 A, TJ = 175 °C
-
-
0.093
VGS = - 4.5 V
ID = - 7.7 A
-
0.037
0.048
-
35
-
-
4433
5545
VDS = - 15 V, ID = - 9.2 A
V
nA
μA
A

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
-
301
380
Reverse Transfer Capacitance
Crss
-
208
260
Total Gate Chargec
Qg
-
96
144
Gate-Source
Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Rg
Turn-On Delay
Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Source-Drain Diode Ratings and
VGS = 0 V
VGS = - 10 V
VDS = - 25 V, f = 1 MHz
VDS = - 50V, ID = - 9.2 A
-
8.4
-
-
23.5
-
f = 1 MHz
1.5
3.13
4.7
-
11
17
VDD = - 50 V, RL = 6.49 
ID  - 7.7 A, VGEN = - 10 V, Rg = 1.0 
-
11
17
-
78
117
-
15
23
-
-
- 150
A
-
- 0.8
- 1.5
V
td(on)
tr
td(off)
pF
tf
nC

ns
Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = - 7.7 A, VGS = 0 V
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-1559-Rev. B 22-Aug-11
2
Document Number: 67022
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD40P10-40L
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
40
40
VGS = 10 V thru 4 V
32
ID - Drain Current (A)
ID - Drain Current (A)
32
24
16
VGS = 3 V
8
24
TC = 25 °C
16
8
TC = 125 °C
0
2
4
6
8
0
10
1
2
3
4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
10
100
8
80
gfs - Transconductance (S)
ID - Drain Current (A)
TC = - 55 °C
0
0
6
TC = 25 °C
4
2
TC = 125 °C
TC = - 55 °C
1
3
5
TC = - 55 °C
TC = 25 °C
60
TC = 125 °C
40
20
0
0
0
2
4
0
5
10
20
30
40
50
80
100
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Transconductance
0.10
7000
6000
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0.08
0.06
VGS = 4.5 V
0.04
VGS = 10 V
0.02
5000
Ciss
4000
3000
2000
1000
Crss
Coss
0
0.00
0
8
16
24
32
40
0
40
60
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
Capacitance
On-Resistance vs. Drain Current
S11-1559-Rev. B 22-Aug-11
20
3
Document Number: 67022
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD40P10-40L
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.5
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
10
ID = 9.2 A
VDS = 50 V
8
6
4
2
20
30
40
50
60
70
80
90
100
VGS = 4.5 V
1.5
1.0
0
25
50
75
100
125
150
175
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
100
0.25
10
0.20
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
10
VGS = 10 V
2.0
0.5
- 50 - 25
0
0
ID = 9.2 A
TJ = 150 °C
1
0.1
TJ = 25 °C
0.01
0.15
0.10
TJ = 150 °C
0.05
TJ = 25 °C
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
VSD - Source-to-Drain Voltage (V)
8
10
On-Resistance vs. Gate-to-Source Voltage
- 105
VDS - Drain-to-Source Voltage (V)
1.1
0.8
VGS(th) Variance (V)
6
VGS - Gate-to-Source Voltage (V)
Source Drain Diode Forward Voltage
ID = 250 μA
0.5
ID = 5 mA
0.2
- 0.1
- 0.4
- 50 - 25
4
0
25
50
75
100
125
150
- 120
- 125
- 130
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
TJ - Temperature (°C)
Threshold Voltage
S11-1559-Rev. B 22-Aug-11
- 115
- 135
- 50 - 25
175
ID = 10 mA
- 110
Drain Source Breakdown vs. Junction Temperature
4
Document Number: 67022
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD40P10-40L
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
IDM Limited
ID - Drain Current (A)
100
100 μs
10
1
Limited by RDS(on)*
0.1
0.01
0.01
TC = 25 °C
Single Pulse
1 ms
10 ms
100 ms
1 s,10 s, DC
BVDSS Limited
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
S11-1559-Rev. B 22-Aug-11
5
Document Number: 67022
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD40P10-40L
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Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 50 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
0.02
0.01
10 -4
Single Pulse
10 -3
10 -2
10 -1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction to Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67022.
S11-1559-Rev. B 22-Aug-11
6
Document Number: 67022
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ordering Information
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Vishay Siliconix
DPAK / TO-252 and Reverse DPAK
Ordering codes for the SQ rugged series power MOSFETs in the DPAK / TO-252 and Reverse DPAK packages:
DATASHEET PART NUMBER
OLD ORDERING CODE a
SQD07N25-350H
SQD07N25-350H-GE3
SQD07N25-350H_GE3
SQD100N02-3m5L
-
SQD100N02-3m5L_GE3
SQD100N03-3m2L
SQD100N03-3M2L-GE3
SQD100N03-3M2L_GE3
SQD100N03-3m4
SQD100N03-3M4-GE3
SQD100N03-3M4_GE3
NEW ORDERING CODE
SQD100N04-3m6
SQD100N04-3M6-GE3
SQD100N04-3M6_GE3
SQD100N04-3m6L
SQD100N04-3M6L-GE3
SQD100N04-3M6L_GE3
SQD10N30-330H
SQD10N30-330H-GE3
SQD10N30-330H_GE3
SQD15N06-42L
SQD15N06-42L-GE3
SQD15N06-42L_GE3
SQD19P06-60L
SQD19P06-60L-GE3
SQD19P06-60L_GE3
SQD23N06-31L
SQD23N06-31L-GE3
SQD23N06-31L_GE3
SQD25N06-22L
SQD25N06-22L-GE3
SQD25N06-22L_GE3
SQD25N15-52
SQD25N15-52-GE3
SQD25N15-52_GE3
SQD30N05-20L
SQD30N05-20L-GE3
SQD30N05-20L_GE3
SQD40N06-14L
SQD40N06-14L-GE3
SQD40N06-14L_GE3
SQD40N10-25
SQD40N10-25-GE3
SQD40N10-25_GE3
SQD40P10-40L
SQD40P10-40L-GE3
SQD40P10-40L_GE3
SQD45P03-12
SQD45P03-12-GE3
SQD45P03-12_GE3
SQD50N04-5m6
SQD50N04-5M6-GE3
SQD50N04-5M6_GE3
SQD50N04-5m6L
-
SQD50N04-5m6L_GE3
SQD50N05-11L
SQD50N05-11L-GE3
SQD50N05-11L_GE3
SQD50N06-09L
SQD50N06-09L-GE3
SQD50N06-09L_GE3
SQD50N10-8m9L
SQD50N10-8M9L-GE3
SQD50N10-8M9L_GE3
SQD50P03-07
SQD50P03-07-GE3
SQD50P03-07_GE3
SQD50P04-13L
SQD50P04-13L-GE3
SQD50P04-13L_GE3
SQD50P04-09L
SQD50P04-09L-GE3
SQD50P04-09L_GE3
SQD50P06-15L
SQD50P06-15L-GE3
SQD50P06-15L_GE3
SQD50P08-25L
SQD50P08-25L-GE3
SQD50P08-25L_GE3
SQD50P08-28
SQD50P08-28-GE3
SQD50P08-28_GE3
SQD90P04-9m4L
SQD90P04-9M4L-GE3
SQD90P04-9M4L_GE3
SQD97N06-6m3L
SQD97N06-6M3L-GE3
SQD97N06-6M3L_GE3
SQR40N10-25
SQR40N10-25-GE3
SQR40N10-25_GE3
SQR50N04-3m8
SQR50N04-3M8-GE3
SQR50N04-3M8_GE3
Note
a. Old ordering code is obsolete and no longer valid for new orders
Revision: 11-Nov-15
Document Number: 66957
1
For technical questions, contact: [email protected]
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
TO-252AA Case Outline
E
MILLIMETERS
A
C2
e
b2
D1
e1
E1
L
gage plane height (0.5 mm)
L4
b
L5
H
D
L3
b3
C
A1
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.18
2.38
0.086
0.094
A1
-
0.127
-
0.005
b
0.64
0.88
0.025
0.035
b2
0.76
1.14
0.030
0.045
b3
4.95
5.46
0.195
0.215
0.024
C
0.46
0.61
0.018
C2
0.46
0.89
0.018
0.035
D
5.97
6.22
0.235
0.245
D1
4.10
-
0.161
-
E
6.35
6.73
0.250
0.265
E1
4.32
-
0.170
-
H
9.40
10.41
0.370
0.410
e
2.28 BSC
e1
0.090 BSC
4.56 BSC
0.180 BSC
L
1.40
1.78
0.055
0.070
L3
0.89
1.27
0.035
0.050
L4
-
1.02
-
0.040
L5
1.01
1.52
0.040
0.060
ECN: T13-0592-Rev. A, 02-Sep-13
DWG: 6019
Note
• Dimension L3 is for reference only.
Revision: 02-Sep-13
Document Number: 64424
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
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APPLICATION NOTE
Document Number: 72594
Revision: 21-Jan-08
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000