Reflective Photosensors (Photo Reflectors) CNB1303 Reflective Photosensor Unit : mm Overview 9.0±1.0 CNB1303 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Si phototransistor in a single resin package. 2.0±0.2 Mark for indicating emitter side C0.5 1 3 Chip center 2.7±0.2 0.4 Features 9.0±1.0 Visible light cutoff resin is used Fast response : tr, tf = 20µs (typ.) 4-0.7 2.0±0.2 Ultraminiature, thin type : 2.7 × 3.4 mm (height : 1.5 mm) 4-0.5 ±0.1 Easy interface for control circuit 2 0.5 0.15 4 Applications Control of motor and other rotary units 3.4±0.3 , ,, 1.5±0.2 1.8 Detection of position and edge Detection of paper, film and cloth 3 Start, end mark detection of magnetic tape 4 1 2 Pin connection Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Reverse voltage (DC) Unit VR 3 V IF 50 mA PD*1 75 mW IC 20 mA Output (Photo Collector to emitter voltage transistor) Emitter to collector voltage VCEO 30 V VECO 5 V Collector power dissipation PC *2 50 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C Input (Light Forward current (DC) emitting diode) Power dissipation Collector current Temperature *1 Input power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C. *2 Output power derating ratio is 0.67 mW/˚C at Ta ≥ 25˚C. Electrical Characteristics (Ta = 25˚C) Parameter Symbol Forward voltage (DC) Input Reverse current (DC) characteristics Capacitance between terminals Output characteristics Collector cutoff current typ max Unit VF IF = 50mA 1.3 1.5 V IR VR = 3V 0.01 10 µA Ct VR = 0V, f = 1MHz ICEO Conditions min 30 VCE = 10V IC*1, *2 VCC = 5V, IF = 10mA, RL = 100Ω, d = 1mm Collector current Leakage current Transfer characteristics Response time ID 90 VCC = 5V, IF = 10mA, RL = 100Ω tr*3 , tf*4 VCC = 5V, IC = 0.1mA, RL = 100Ω Q R S IC (µA) 90 to 220 180 to 440 360 to 880 *3 Time *4 Time nA µs 0.4 *2 Output Class 200 V required for the output current to increase from 10% to 90% of its final value required for the output current to decrease from 90% to 10% of its initial value current measurement method Evaporated Al Glass plate (t = 1mm) IF IC RL ,, , classifications nA µA ,,, ,,, ,,, ,,, ,,,, C 200 880 20 Collector to emitter saturation voltage VCE(sat) IF = 20mA, IC = 0.1mA *1 I pF VCC 1 CNB1303 Reflective Photosensors (Photo Reflectors) IF , IC — Ta IF — VF 1.6 Ta = 25˚C IF 30 IC 10 VF (V) 40 Forward voltage 40 20 IF = 50mA 50 IF (mA) 50 30 20 20 40 60 80 0 100 0 0.4 10mA 1mA 0.8 0.4 0.8 1.2 1.6 2.0 0 – 40 – 20 2.4 Forward voltage VF (V) IC — IF 0 IC — VCE 800 600 VCC = 5V Ta = 25˚C RL = 100Ω d = 1mm 200 60 80 100 IC — Ta d = 1mm Ta = 25˚C VCC = 5V IF = 10mA RL = 100Ω IF = 20mA IC (%) IC (mA) Collector current 400 40 160 500 600 20 Ambient temperature Ta (˚C ) 120 400 Relative output current 0 Ambient temperature Ta (˚C ) IC (µA) 1.2 10 0 – 25 Collector current VF — Ta 60 Forward current Forward current, collector current IF , IC (mA) 60 15mA 300 10mA 200 8mA 6mA 100 80 40 4mA 2mA 8 16 0 24 Forward current IF (mA) 0 2 4 6 Collector to emitter voltage VCE (V) ICEO — Ta tr , tf — IC 10 –2 10 –3 10 –4 – 40 – 20 0 20 40 60 80 Ambient temperature Ta (˚C ) 100 60 80 100 VCC = 5V Ta = 25˚C IF = 10mA VCC = 5V Ta = 25˚C : tr : tf 10 2 RL = 2kΩ 1kΩ 10 100Ω 1 10 –1 10 –2 40 IC — d 10 –1 1 Collector current IC (mA) 10 IC (%) tr , tf (µs) Rise time , fall time ICEO (µA) Dark current 10 –1 20 100 VCE = 10V 1 0 Ambient temperature Ta (˚C ) 10 3 10 2 0 – 40 – 20 8 80 60 ,, , 0 Relative output current 0 d 40 20 0 0 2 4 6 Distance d (mm) 8 10