Transmissive Photosensors (Photo Interrupters) CNA1006N Photo Interrupter 16.6 11.8 3.0+0.2 –0.3 A 2-ø1.0 +0 –0.05 Gap width : 3 mm SEC A-A' 1.6 3.5 A' 4-0.45 (7.6) 15.0 3.5±0.5 Features Highly precise position detection : 0.3 mm Optical center 6.0 1.5 CNA1006N is a transmissive photosensor in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other, and objects passing between them are detected. (3.8) Overview Slit width 1.5±0.1 ,,,, 6.5 5.0 1.5 2.5 For contactless SW, object detection 2-1.5 (2.54) 2-3.3 2 12.6±0.3 2 3 3 Symbol Ratings Reverse voltage (DC) Input (Light Forward current (DC) emitting diode) Power dissipation Collector current Unit VR 3 V IF 50 mA PD*1 75 mW IC 20 mA 30 V 5 V 100 mW Output (Photo Collector to emitter voltage VCEO transistor) Emitter to collector voltage VECO *2 4 Pin connection 1 4 1: Anode 3: Collecter 2: Cathode 4: Emitter (Note) 1. Tolerance unless otherwise specified is ±0.2 2. ( ) Dimension is reference 3. Fitting strength is 2N min. (Static load) Absolute Maximum Ratings (Ta = 25˚C) Parameter 2.0±0.1 2.0±0.1 1 The type direetly attached to PCB (with positioning pins and fixing hooks) Temperature 0.5±0.1 Unit : mm Collector power dissipation PC Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg ˚C – 30 to +100 *1 Input power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C. *2 Output power derating ratio is 1.33 mW/˚C at Ta ≥ 25˚C. Electrical Characteristics (Ta = 25˚C) Parameter Symbol Conditions Forward voltage (DC) Input characteristics Reverse current (DC) VF IF = 20mA IR VR = 3V Output characteristics Collector cutoff current ICEO VCE = 10V typ max 1.25 1.4 V 10 µA 200 nA 14 mA 0.4 V 10 Collector current IC VCE = 5V, IF = 20mA Transfer Collector to emitter saturation voltage V IF = 40mA, IC = 1mA CE(sat) characteristics * Response time tr , tf VCC = 5V, IC = 1mA, RL = 100Ω * min 0.7 5 Unit µs Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) RL ,, ,, 50Ω 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector current to decrease from 90% to 10% of its initial value) 1 CNA1006N Transmissive Photosensors (Photo Interrupters) IF , IC — Ta IF — VF VF — Ta 60 1.6 Ta = 25˚C IF 30 IC 10 VF (V) 30 20 20 40 60 80 0 100 0 0.4 0.8 1.2 1.6 0 – 40 – 20 2.4 10 –1 10 –1 1 0 20 VCC 10 –1 60 80 Ambient temperature Ta (˚C ) 100 Sig. OUT RL tr , ,, Sig. OUT 50Ω 10 –2 10 –1 1 td 80 60 Criterion 0 d 1 Sig.IN 100 VCE = 5V Ta = 25˚C IF = 20mA 100Ω 10 –1 80 IC — d tr (µs) Rise time 1 60 100 RL = 1kΩ 500Ω 10 40 Ambient temperature Ta (˚C ) VCC = 5V Ta = 25˚C 10 2 40 40 tr — IC VCE = 10V 20 80 0 – 40 – 20 10 2 10 10 2 0 IC (%) 10mA 1 ICEO — Ta 10 –2 – 40 – 20 120 Collector to emitter voltage VCE (V) 10 100 20mA Forward current IF (mA) 10 3 80 VCE = 5V IF = 20mA IF = 30mA 10 10 –2 10 –1 10 2 10 60 IC — Ta IC (%) 1 40 160 Relative output current 1 20 Ta = 25˚C IC (mA) 10 10 –2 10 –1 0 Ambient temperature Ta (˚C ) IC — VCE Collector current IC (mA) 2.0 10 2 VCE = 5V Ta = 25˚C Collector current 0.4 Forward voltage VF (V) IC — IF ICEO (nA) 1mA 0.8 ,, 0 10 2 Dark current 10mA 10 Ambient temperature Ta (˚C ) 2 1.2 Relative output current 0 – 25 40 Forward voltage 40 20 IF = 50mA 50 IF (mA) 50 Forward current Forward current, collector current IF , IC (mA) 60 90% 10% 40 20 tf 10 Collector current IC (mA) 102 0 0 1 2 3 4 Distance d (mm) 5 6