SUM70090E Datasheet

SUM70090E
www.vishay.com
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
100
RDS(on) () MAX.
ID (A) c
0.0089 at VGS = 10 V
50
0.0093 at VGS = 7.5 V
50
• ThunderFET® power MOSFET
Qg (TYP.)
• Maximum 175 °C junction temperature
• Qgd / Qgs ratio < 1 optimizes switching
characteristics
33 nC
• 100 % Rg and UIS tested
TO-263
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Power supply
- Secondary synchronous rectification
S
• DC/DC converter
D
Top View
D
G
• Power tools
G
• Motor drive switch
Ordering Information:
SUM70090E-GE3 (lead (Pb)-free and halogen-free)
• DC/AC inverter
• Battery management
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
Pulsed Drain Current (t = 100 μs)
Avalanche Current
Single Avalanche Energy a
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation a
TC = 70 °C
Operating Junction and Storage Temperature Range
b
ID
V
50 c
50 c
IDM
120
IAS
40
EAS
80
PD
UNIT
125
87.5
A
mJ
W
TJ, Tstg
-55 to +175
°C
SYMBOL
LIMIT
UNIT
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient (PCB Mount)
b
Junction-to-Case (Drain)
RthJA
40
RthJC
1.2
°C/W
Notes
a. Duty cycle  1 %.
b. When mounted on 1" square PCB (FR4 material).
c. Package limited.
S16-0163-Rev. A, 01-Feb-16
Document Number: 64432
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM70090E
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
100
-
-
VGS(th)
VDS = VGS, ID = 250 μA
2
-
4
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 250
VDS = 100 V, VGS = 0 V
-
-
1
VDS = 100 V, VGS = 0 V, TJ = 125 °C
-
-
150
VDS = 100 V, VGS = 0 V, TJ = 175 °C
-
-
5
mA
VDS  10 V, VGS = 10 V
50
-
-
A
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance a
Dynamic
IDSS
ID(on)
RDS(on)
gfs
VGS = 10 V, ID = 20 A
-
0.0074
0.0089
VGS = 7.5 V, ID = 15 A
-
0.0077
0.0093
VDS = 15 V, ID = 10 A
-
38
-
-
1950
-
V
nA
μA

S
b
Input Capacitance
Ciss
Output Capacitance
Coss
-
845
-
Reverse Transfer Capacitance
Crss
-
54
-
Total Gate Charge c
Qg
-
33
50
Gate-Source Charge
c
Gate-Drain Charge c
VDS = 50 V, VGS = 10 V, ID = 20 A
-
8.8
-
-
7.5
-
f = 1 MHz
0.7
3.5
7
-
15
30
VDD = 50 V, RL = 5 
ID  10 A, VGEN = 10 V, Rg = 1 
-
27
54
-
36
72
-
45
90
Qgd
Gate Resistance
Turn-On Delay Time
Qgs
VGS = 0 V, VDS = 50 V, f = 1 MHz
Rg
c
Rise Time c
Turn-Off Delay Time c
Fall Time c
td(on)
tr
td(off)
tf
pF
nC

ns
Drain-Source Body Diode Ratings and Characteristics b (TC = 25 °C)
Pulsed Current (t = 100 μs)
ISM
Forward Voltage a
VSD
Reverse Recovery Time
Peak Reverse Recovery Charge
Reverse Recovery Charge
IF = 10 A, VGS = 0 V
trr
IRM(REC)
Qrr
IF = -10 A, dI/dt = 100 A/μs
-
-
120
A
-
0.8
1.5
V
-
77
116
ns
-
4.2
6.3
A
-
145
365
nC
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-0163-Rev. A, 01-Feb-16
Document Number: 64432
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM70090E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
120
10000
100
60
VGS = 5 V
100
30
75
1000
1st line
2nd line
1000
2nd line
ID - Drain Current (A)
90
1st line
2nd line
TC = 25 °C
50
100
TC = 125 °C
25
TC = -55 °C
VGS = 4 V
0
10
0
1
2
3
4
0
5
10
0
2
4
8
VDS - Drain-to-Source Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
Axis Title
0.015
10000
3600
10000
3000
1000
VGS = 7.5 V
0.009
VGS = 10 V
0.006
100
2nd line
C - Capacitance (pF)
0.012
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
6
0.003
1000
2400
Ciss
1st line
2nd line
2nd line
ID - Drain Current (A)
VGS = 10 V thru 6 V
1800
1200
100
Coss
600
Crss
0
0
10
30
60
90
120
10
0
20
80
VDS - Drain-to-Source Voltage (V)
2nd line
On-Resistance vs. Drain Current
Capacitance
Axis Title
10000
60
ID = 15 A
VDS = 30 V
1000
1st line
2nd line
6
4
100
2
0
10
14
21
28
35
2nd line
gfs - Transconductance (S)
TC = -55 °C
8
7
100
Axis Title
10000
0
60
ID - Drain Current (A)
2nd line
10
2nd line
VGS - Gate-to-Source Voltage (V)
40
45
TC = 25 °C
1000
30
TC = 125 °C
100
15
0
0
3.0
6.0
9.0
Qg - Total Gate Charge (nC)
2nd line
ID - Drain Current (A)
2nd line
Gate Charge
Transconductance
S16-0163-Rev. A, 01-Feb-16
1st line
2nd line
0
12.0
10
15.0
Document Number: 64432
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM70090E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
100
10000
ID = 20 A
10000
VGS = 10 V
10
VGS = 7.5 V
1.2
100
0.9
0.6
0
25
50
0.1
100
0.01
10
0
75 100 125 150 175
0.2
0.4
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
2nd line
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
Axis Title
Axis Title
ID = 250 μA
TJ = 150 °C
0.012
3.0
1000
1st line
2nd line
1000
2nd line
VGS(th) (V)
0.024
0.018
10000
3.6
10000
1st line
2nd line
2.4
100
100
TJ = 25 °C
1.8
0.006
0
2
4
6
8
10
1.2
10
10
-50 -25
0
25
50
75 100 125 150 175
VGS - Gate-to-Source Voltage (V)
2nd line
TJ - Temperature (°C)
2nd line
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Axis Title
Axis Title
10000
1000
10000
120
ID = 250 μA
Limited by IDM
1st line
2nd line
1000
112
100
108
2nd line
ID - Drain Current (A)
100
116
10
1000
Limited by RDS(on)*
100 μs
1 ms
10 ms
DC, 10 s, 100
1 s, 100 ms
1
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
0.6
TJ - Junction Temperature (°C)
2nd line
0.03
2nd line
VDS - Drain-to-Source Voltage (V)
1000
TJ = 25 °C
0.001
10
-50 -25
TJ = 150 °C
1
1st line
2nd line
1000
1.5
2nd line
IS - Source Current (A)
1.8
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
2.1
0.1
TC = 25 °C
Single Pulse
104
10
-50 -25
0
25
50
75 100 125 150 175
BVDSS Limited
0.01
10
0.1
1
10
100
TJ - Temperature (°C)
2nd line
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Drain Source Voltage vs. Junction Temperature
Safe Operating Area
S16-0163-Rev. A, 01-Feb-16
Document Number: 64432
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM70090E
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Axis Title
10000
75
1000
1st line
2nd line
2nd line
ID - Drain Current (A)
100
Package limited
50
100
25
0
10
0
25
50
75
100
125
150
175
TC - Case Temperature (°C)
2nd line
Current De-Rating
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.05
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJC = 1.2 °C/W
Single Pulse
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
0.1
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction to Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?64432.
S16-0163-Rev. A, 01-Feb-16
Document Number: 64432
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-263 (D2PAK): 3-LEAD
-B-
L2
6
E1
K
D4
-A-
c2
D2
D3
A
E
L3
L
D
D1
E3
A
A
b2
b
e
c
Detail “A”
E2
0.010 M A M
2 PL
0°
L4
-5
°
INCHES
L1
DETAIL A (ROTATED 90°)
c*
c
c1
c1
M
b
b1
SECTION A-A
MIN.
MAX.
MIN.
MAX.
A
0.160
0.190
4.064
4.826
b
0.020
0.039
0.508
0.990
b1
0.020
0.035
0.508
0.889
1.397
b2
0.045
0.055
1.143
Thin lead
0.013
0.018
0.330
0.457
Thick lead
0.023
0.028
0.584
0.711
Thin lead
0.013
0.017
0.330
0.431
Thick lead
0.023
0.027
0.584
0.685
c2
0.045
0.055
1.143
1.397
D
0.340
0.380
8.636
9.652
D1
0.220
0.240
5.588
6.096
D2
0.038
0.042
0.965
1.067
D3
0.045
0.055
1.143
1.397
D4
0.044
0.052
1.118
1.321
E
0.380
0.410
9.652
10.414
E1
0.245
-
6.223
-
E2
0.355
0.375
9.017
9.525
E3
0.072
0.078
1.829
1.981
e
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by
max. 8 mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
Revison: 30-Sep-13
MILLIMETERS
DIM.
0.100 BSC
2.54 BSC
K
0.045
0.055
1.143
1.397
L
0.575
0.625
14.605
15.875
L1
0.090
0.110
2.286
2.794
L2
0.040
0.055
1.016
1.397
L3
0.050
0.070
1.270
1.778
L4
M
0.010 BSC
-
0.254 BSC
0.002
-
0.050
ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843
1
Document Number: 71198
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AN826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
0.420
0.355
0.635
(16.129)
(9.017)
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 73397
11-Apr-05
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1
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000