SUP90140E Datasheet

SUP90140E
www.vishay.com
Vishay Siliconix
N-Channel 200 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
200
RDS(on) () MAX.
ID (A)
0.017 at VGS = 10 V
90
0.018 at VGS = 7.5 V
88
Qg (TYP.)
64 nC
• ThunderFET® power MOSFET
• Maximum 175 °C junction temperature
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
TO-220AB
APPLICATIONS
D
• Power supplies:
- Uninterruptible power supplies
- AC/DC switch-mode power supplies
- Lighting
Top View
G
D
G
• Synchronous rectification
S
• DC/DC converter
• Motor drive switch
Ordering Information:
SUP90140E-GE3 (lead (Pb)-free and halogen-free)
S
• DC/AC inverter
• Solar micro inverter
N-Channel MOSFET
• Class D audio amplifier
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
200
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
Pulsed Drain Current (t = 100 μs)
ID
IDM
Avalanche Current
L = 0.1 mH
Single Avalanche Energy a
TC = 25 °C
Maximum Power Dissipation a
TC = 125 °C
Operating Junction and Storage Temperature Range
V
90
75
240
IAS
60
EAS
180
PD
UNIT
375 b
125 b
A
mJ
W
TJ, Tstg
-55 to +175
°C
SYMBOL
LIMIT
UNIT
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient (PCB Mount)
c
Junction-to-Case (Drain)
RthJA
40
RthJC
0.4
°C/W
Notes
a. Duty cycle  1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR4 material).
S15-2641-Rev. A, 16-Nov-15
Document Number: 79036
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUP90140E
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
200
-
-
VGS(th)
VDS = VGS, ID = 250 μA
2
-
4
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 250
VDS = 200 V, VGS = 0 V
-
-
1
VDS = 200 V, VGS = 0 V, TJ = 125 °C
-
-
150
VDS = 200 V, VGS = 0 V, TJ = 175 °C
-
-
5
mA
VDS  10 V, VGS = 10 V
90
-
-
A
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance a
Dynamic
IDSS
ID(on)
RDS(on)
gfs
VGS = 10 V, ID = 30 A
-
0.0138
0.0170
VGS = 7.5 V, ID = 30 A
-
0.0141
0.0180
VDS = 15 V, ID = 30 A
-
75
-
-
4132
-
V
nA
μA

S
b
Input Capacitance
Ciss
Output Capacitance
Coss
-
246
-
Reverse Transfer Capacitance
Crss
-
21
-
Total Gate Charge c
Qg
-
64
96
Gate-Source Charge
c
Gate-Drain Charge c
VDS = 100 V, VGS = 10 V, ID = 60 A
-
16.7
-
-
16.9
-
f = 1 MHz
1.5
3
5
-
13
26
VDD = 100 V, RL = 1.66 
ID  60 A, VGEN = 10 V, Rg = 1 
-
112
200
-
35
70
-
80
150
Qgd
Gate Resistance
Turn-On Delay Time
Qgs
VGS = 0 V, VDS = 100 V, f = 1 MHz
Rg
c
Rise Time c
Turn-Off Delay Time c
Fall Time c
td(on)
tr
td(off)
tf
pF
nC

ns
Drain-Source Body Diode Ratings and Characteristics b (TC = 25 °C)
Pulsed Current (t = 100 μs)
ISM
Forward Voltage a
VSD
Reverse Recovery Time
Peak Reverse Recovery Charge
Reverse Recovery Charge
IF = 10 A, VGS = 0 V
trr
IRM(REC)
Qrr
IF = 30 A, di/dt = 100 A/μs
-
-
240
A
-
0.8
1.2
V
-
160
320
ns
-
11
20
A
-
0.9
1.8
μC
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-2641-Rev. A, 16-Nov-15
Document Number: 79036
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUP90140E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
150
150
VGS = 10 V thru 6 V
120
ID - Drain Current (A)
ID - Drain Current (A)
120
90
60
VGS = 5 V
90
TC = 25 °C
60
TC = 125 °C
30
30
TC = - 55 °C
VGS =4 V
0
0
0
2
4
6
8
10
0
VDS - Drain-to-Source Voltage (V)
2
Output Characteristics
8
10
0.017
80
0.016
RDS(on) - On-Resistance (Ω)
TC = 25 °C
60
TC = - 55 °C
40
TC = 125 °C
20
0.015
VGS = 7.5 V
0.014
VGS = 10 V
0.013
0
0.012
0
6
12
18
24
30
0
20
40
60
80
ID - Drain Current (A)
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
7000
100
10
VGS - Gate-to-Source Voltage (V)
ID = 60 A
5600
C - Capacitance (pF)
6
Transfer Characteristics
100
gfs - Transconductance (S)
4
VGS - Gate-to-Source Voltage (V)
Ciss
4200
2800
Coss
1400
VDS = 100 V
8
VDS = 50 V
6
VDS = 150 V
4
2
Crss
0
0
0
20
40
60
80
VDS - Drain-to-Source Voltage (V)
Capacitance
S15-2641-Rev. A, 16-Nov-15
100
0
13
26
39
52
65
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 79036
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUP90140E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
3.6
3
RDS(on) - On-Resistance (Normalized)
ID = 250 μA
3.2
2.5
VGS(th) (V)
VGS= 10 V, ID = 30 A
2
1.5
2.8
2.4
VGS = 7.5 V, ID = 30 A
1
2
0.5
- 50 - 25
0
25
50
75
100
125
150
1.6
- 50 - 25
175
0
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
150
175
150
175
Threshold Voltage
260
0.05
ID = 250 μA
VDS (V) Drain-to-Source Voltage
ID = 30 A
RDS(on) - On-Resistance (Ω)
25
50
75 100 125
TJ - Temperature (°C)
0.04
TJ = 125 °C
0.03
0.02
TJ = 25 °C
0.01
2
4
6
8
240
230
220
210
- 50
0
0
250
10
- 25
0
25
50
75
100
125
TJ - Temperature (°C)
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
100
100
10
ID - Drain Current (A)
IS - Source Current (A)
80
TJ = 150 °C
TJ = 25 °C
1
60
40
20
0.1
0.0
0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
S15-2641-Rev. A, 16-Nov-15
1.2
0
25
50
75
100
125
TC - Case Temperature (°C)
150
175
Current De-rating
Document Number: 79036
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUP90140E
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
100
IDM Limited
ID Limited
100 μs
25 °C
10
Limited by RDS(on)*
IDAV (A)
ID - Drain Current (A)
100
1
10
150 °C
1 ms
10 ms
100 ms, DC
0.1
TC = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
0.00001
1
10
100
1000
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
0.0001
0.001
0.01
0.1
Time (s)
Safe Operating Area
Single Pulse Avalanche Current Capability vs. Time
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.001
0.0001
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S15-2641-Rev. A, 16-Nov-15
Document Number: 79036
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUP90140E
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction to Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?79036.
S15-2641-Rev. A, 16-Nov-15
Document Number: 79036
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-220AB
MILLIMETERS
A
E
F
D
H(1)
Q
ØP
3
2
L(1)
1
M*
L
b(1)
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
4.25
4.65
0.167
0.183
b
0.69
1.01
0.027
0.040
b(1)
1.20
1.73
0.047
0.068
c
0.36
0.61
0.014
0.024
D
14.85
15.49
0.585
0.610
D2
12.19
12.70
0.480
0.500
E
10.04
10.51
0.395
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.09
6.48
0.240
0.255
0.115
J(1)
2.41
2.92
0.095
L
13.35
14.02
0.526
0.552
L(1)
3.32
3.82
0.131
0.150
ØP
3.54
3.94
0.139
0.155
Q
2.60
3.00
0.102
0.118
ECN: T14-0413-Rev. P, 16-Jun-14
DWG: 5471
Note
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
C
b
e
J(1)
e(1)
D2
Document Number: 71195
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revison: 16-Jun-14
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Revision: 02-Oct-12
1
Document Number: 91000