SUM70040E Datasheet

SUM70040E
www.vishay.com
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
100
RDS(on) () MAX.
ID (A) d
0.0040 at VGS = 10 V
120
0.0046 at VGS = 7.5 V
120
Qg (TYP.)
• ThunderFET® power MOSFET
• Maximum 175 °C junction temperature
• 100 % Rg and UIS tested
76
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
TO-263
APPLICATIONS
D
• Power supply
- Secondary synchronous rectification
• DC/DC converter
• Power tools
S
D
Top View
G
• Motor drive switch
G
• DC/AC inverter
Ordering Information:
SUM70040E-GE3 (Lead (Pb)-free and halogen-free)
• Battery management
S
• OR-ing
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
ID
120 d
IDM
480
Avalanche Current
IAS
73
Single Avalanche Energy
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation a
TC = 125 °C
Operating Junction and Storage Temperature Range
EAS
PD
V
120 d
Pulsed Drain Current (t = 100 μs)
a
UNIT
266
375 b
125 b
A
mJ
W
TJ, Tstg
-55 to +175
°C
SYMBOL
LIMIT
UNIT
RthJA
40
RthJC
0.4
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient (PCB Mount)
c
Junction-to-Case (Drain)
°C/W
Notes
a. Duty cycle  1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR4 material).
d. Package limited.
S13-0735-Rev. A, 13-Apr-15
Document Number: 62995
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM70040E
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
100
-
-
VGS(th)
VDS = VGS, ID = 250 μA
2.5
-
4
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 250
VDS = 100 V, VGS = 0 V
-
-
1
VDS = 100 V, VGS = 0 V, TJ = 125 °C
-
-
150
VDS = 100 V, VGS = 0 V, TJ = 175 °C
-
-
5
mA
VDS  10 V, VGS = 10 V
120
-
-
A
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance a
Dynamic
IDSS
ID(on)
RDS(on)
gfs
VGS = 10 V, ID = 20 A
-
0.0032
0.0040
VGS = 7.5 V, ID = 15 A
-
0.0035
0.0046
VDS = 15 V, ID = 20 A
-
82
-
-
5100
-
V
nA
μA

S
b
Input Capacitance
Ciss
Output Capacitance
Coss
-
2025
-
Reverse Transfer Capacitance
Crss
-
165
-
Total Gate Charge c
Qg
-
76
120
Gate-Source Charge
c
Gate-Drain Charge c
VDS = 50 V, VGS = 10 V, ID = 20 A
-
23
-
17
-
f = 1 MHz
0.6
3.3
6.6
-
15
30
VDD = 50 V, RL = 5 
ID  10 A, VGEN = 10 V, Rg = 1 
-
22
40
-
55
100
-
15
30
-
-
480
A
-
0.8
1.5
V
Rg
c
Rise Time c
Turn-Off Delay Time c
Fall Time c
td(on)
tr
td(off)
pF
-
Qgd
Gate Resistance
Turn-On Delay Time
Qgs
VGS = 0 V, VDS = 50 V, f = 1 MHz
tf
nC

ns
Drain-Source Body Diode Ratings and Characteristics b (TC = 25 °C)
Pulsed Current
ISM
Forward Voltage a
VSD
IF = 10 A, VGS = 0 V
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.


Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S13-0735-Rev. A, 13-Apr-15
Document Number: 62995
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM70040E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
150
VGS = 10 V thru 7 V
200
120
150
ID - Drain Current (A)
ID - Drain Current (A)
VGS = 6 V
100
50
90
TC = 25°C
60
TC = 125°C
30
VGS = 5 V
TC = - 55°C
0
0
0
2
4
6
8
10
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
200
10
0.008
TC = - 55 °C
TC = 25 °C
RDS(on) - On-Resistance (Ω)
gfs - Transconductance (S)
160
120
TC = 125 °C
80
0.006
VGS = 7.5 V
0.004
VGS = 10 V
0.002
40
0
0
0
14
28
42
56
0
70
30
60
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
120
10
8900
VDS = 25 V
VGS - Gate-to-Source Voltage (V)
ID = 20 A
6675
C - Capacitance (pF)
90
ID - Drain Current (A)
Ciss
4450
Coss
2225
8
VDS = 50 V
6
VDS = 80 V
4
2
Crss
0
0
0
20
40
60
80
VDS - Drain-to-Source Voltage (V)
Capacitance
S13-0735-Rev. A, 13-Apr-15
100
0
20
40
60
Qg - Total Gate Charge (nC)
80
Gate Charge
Document Number: 62995
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM70040E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
ID = 20 A
1.8
10
IS - Source Current (A)
RDS(on) - On-Resistance (Normalized)
2.1
VGS = 10 V
1.5
1.2
0.9
TJ = 150 °C
1
0.1
TJ = 25 °C
0.01
0.6
0.001
- 50 - 25
0
25
50
75
100
125
150
175
0.0
0.2
0.4
0.6
0.8
1.0
1.2
TJ - Junction Temperature (°C)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
4
0.020
ID = 250 μA
3.4
0.012
VGS(th) (V)
RDS(on) - On-Resistance (Ω)
0.016
0.008
2.8
TJ = 150 °C
2.2
0.004
TJ = 25 °C
1.6
- 50 - 25
0.000
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
10
0
25
50
75
100
125
150
175
TJ - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
VDS - Drain-to-Source Voltage (V)
125
120
ID = 10 mA
115
110
105
100
- 50 - 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S13-0735-Rev. A, 13-Apr-15
Document Number: 62995
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM70040E
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
IDM Limited
ID - Drain Current (A)
10 μs
100
ID Limited
100 μs
10
Limited by RDS(on)*
1 ms
1
TC = 25 °C
Single Pulse
10 ms
BVDSS Limited
0.1
0.01
100 ms - DC
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.001
0.0001
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S13-0735-Rev. A, 13-Apr-15
Document Number: 62995
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM70040E
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction to Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
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Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62995.
S13-0735-Rev. A, 13-Apr-15
Document Number: 62995
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-263 (D2PAK): 3-LEAD
-B-
L2
6
E1
K
D4
-A-
c2
D2
D3
A
E
L3
L
D
D1
E3
A
A
b2
b
e
c
Detail “A”
E2
0.010 M A M
2 PL
0°
L4
-5
°
INCHES
L1
DETAIL A (ROTATED 90°)
c*
c
c1
c1
M
b
b1
SECTION A-A
MIN.
MAX.
MIN.
MAX.
A
0.160
0.190
4.064
4.826
b
0.020
0.039
0.508
0.990
b1
0.020
0.035
0.508
0.889
1.397
b2
0.045
0.055
1.143
Thin lead
0.013
0.018
0.330
0.457
Thick lead
0.023
0.028
0.584
0.711
Thin lead
0.013
0.017
0.330
0.431
Thick lead
0.023
0.027
0.584
0.685
c2
0.045
0.055
1.143
1.397
D
0.340
0.380
8.636
9.652
D1
0.220
0.240
5.588
6.096
D2
0.038
0.042
0.965
1.067
D3
0.045
0.055
1.143
1.397
D4
0.044
0.052
1.118
1.321
E
0.380
0.410
9.652
10.414
E1
0.245
-
6.223
-
E2
0.355
0.375
9.017
9.525
E3
0.072
0.078
1.829
1.981
e
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by
max. 8 mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
Revison: 30-Sep-13
MILLIMETERS
DIM.
0.100 BSC
2.54 BSC
K
0.045
0.055
1.143
1.397
L
0.575
0.625
14.605
15.875
L1
0.090
0.110
2.286
2.794
L2
0.040
0.055
1.016
1.397
L3
0.050
0.070
1.270
1.778
L4
M
0.010 BSC
-
0.254 BSC
0.002
-
0.050
ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843
1
Document Number: 71198
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AN826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
0.420
0.355
0.635
(16.129)
(9.017)
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 73397
11-Apr-05
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1
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Revision: 02-Oct-12
1
Document Number: 91000