Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
1N4148; 1N4448
High-speed diodes
Product data sheet
Supersedes data of 2002 Jan 23
2004 Aug 10
NXP Semiconductors
Product data sheet
High-speed diodes
1N4148; 1N4448
FEATURES
• Hermetically sealed leaded glass SOD27 (DO-35)
package
• High switching speed: max. 4 ns
handbook, halfpage
k
a
• General application
• Continuous reverse voltage: max. 100 V
MAM246
• Repetitive peak reverse voltage: max. 100 V
• Repetitive peak forward current: max. 450 mA.
The diodes are type branded.
Fig.1
APPLICATIONS
Simplified outline (SOD27; DO-35) and
symbol.
• High-speed switching.
DESCRIPTION
MARKING
The 1N4148 and 1N4448 are high-speed switching diodes
fabricated in planar technology, and encapsulated in
hermetically sealed leaded glass SOD27 (DO-35)
packages.
TYPE NUMBER
MARKING CODE
1N4148
1N4148PH or 4148PH
1N4448
1N4448
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
1N4148
−
DESCRIPTION
hermetically sealed glass package; axial leaded; 2 leads
1N4448
2004 Aug 10
2
VERSION
SOD27
NXP Semiconductors
Product data sheet
High-speed diodes
1N4148; 1N4448
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
−
100
V
VR
continuous reverse voltage
−
100
V
IF
continuous forward current
−
200
mA
IFRM
repetitive peak forward current
−
450
mA
IFSM
non-repetitive peak forward current
t = 1 µs
−
4
A
t = 1 ms
−
1
A
t=1s
−
0.5
A
−
500
mW
see Fig.2; note 1
square wave; Tj = 25 °C prior to
surge; see Fig.4
Tamb = 25 °C; note 1
Ptot
total power dissipation
Tstg
storage temperature
−65
+200
°C
Tj
junction temperature
−
200
°C
Note
1. Device mounted on an FR4 printed-circuit board; lead length 10 mm.
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
IR
PARAMETER
forward voltage
CONDITIONS
MIN.
MAX.
UNIT
see Fig.3
1N4148
IF = 10 mA
−
1
V
1N4448
IF = 5 mA
0.62
0.72
V
IF = 100 mA
−
1
V
reverse current
VR = 20 V; see Fig.5
25
nA
VR = 20 V; Tj = 150 °C; see Fig.5
−
50
µA
IR
reverse current; 1N4448
VR = 20 V; Tj = 100 °C; see Fig.5
−
3
µA
Cd
diode capacitance
f = 1 MHz; VR = 0 V; see Fig.6
−
4
pF
trr
reverse recovery time
when switched from IF = 10 mA to −
IR = 60 mA; RL = 100 Ω;
measured at IR = 1 mA; see Fig.7
4
ns
Vfr
forward recovery voltage
when switched from IF = 50 mA;
tr = 20 ns; see Fig.8
2.5
V
−
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-tp)
thermal resistance from junction to tie-point
lead length 10 mm
240
K/W
Rth(j-a)
thermal resistance from junction to ambient
lead length 10 mm; note 1
350
K/W
Note
1. Device mounted on a printed-circuit board without metallization pad.
2004 Aug 10
3
NXP Semiconductors
Product data sheet
High-speed diodes
1N4148; 1N4448
GRAPHICAL DATA
mbg451
300
MBG464
600
handbook, halfpage
IF
(mA)
IF
(mA)
200
400
(1)
100
(2)
(3)
200
0
0
100
Tamb (°C)
0
200
0
2
VF (V)
(1) Tj = 175 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
Fig.2
1
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3
Forward current as a function of forward
voltage.
MBG704
102
handbook, full pagewidth
IFSM
(A)
10
1
10−1
1
10
102
103
tp (µs)
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2004 Aug 10
4
104
NXP Semiconductors
Product data sheet
High-speed diodes
1N4148; 1N4448
MGD004
mgd290
103
1.2
handbook, halfpage
IR
(µA)
Cd
(pF)
102
1.0
(1)
(2)
10
0.8
1
0.6
10−1
10−2
0.4
0
100
Tj (°C)
0
200
(1) VR = 75 V; typical values.
(2) VR = 20 V; typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5
Fig.6
Reverse current as a function of junction
temperature.
2004 Aug 10
5
10
VR (V)
20
Diode capacitance as a function of reverse
voltage; typical values.
NXP Semiconductors
Product data sheet
High-speed diodes
1N4148; 1N4448
handbook, full pagewidth
tr
tp
t
D.U.T.
10%
IF
RS = 50 Ω
IF
SAMPLING
OSCILLOSCOPE
t rr
t
R i = 50 Ω
V = VR I F x R S
(1)
90%
VR
MGA881
input signal
output signal
(1) IR = 1 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
I
1 kΩ
450 Ω
V
I
90%
R S = 50 Ω
D.U.T.
OSCILLOSCOPE
V fr
R i = 50 Ω
10%
MGA882
t
tr
input
signal
Fig.8 Forward recovery voltage test circuit and waveforms.
2004 Aug 10
6
t
tp
output
signal
NXP Semiconductors
Product data sheet
High-speed diodes
1N4148; 1N4448
PACKAGE OUTLINE
Hermetically sealed glass package; axial leaded; 2 leads
SOD27
(1)
b
D
G1
L
L
DIMENSIONS (mm are the original dimensions)
UNIT
b
max.
D
max.
G1
max.
L
min.
mm
0.56
1.85
4.25
25.4
0
1
2 mm
scale
Note
1. The marking band indicates the cathode.
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
JEITA
SOD27
A24
DO-35
SC-40
2004 Aug 10
7
EUROPEAN
PROJECTION
ISSUE DATE
97-06-09
05-12-22
NXP Semiconductors
Product data sheet
High-speed diodes
1N4148; 1N4448
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Aug 10
8
NXP Semiconductors
Customer notification
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Printed in The Netherlands
R76/05/pp9
Date of release: 2004 Aug 10
Document order number: 9397 750 13541
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