PHILIPS BAS32L_05

BAS32L
High-speed switching diode
Rev. 04 — 22 March 2005
Product data sheet
1. Product profile
1.1 General description
Single high-speed switching diode, fabricated in planar technology, and encapsulated in a
small hermetically sealed glass SOD80C SMD package.
1.2 Features
■
■
■
■
■
Small hermetically sealed glass SMD package
High switching speed: ≤ 4 ns
Continuous reverse voltage: ≤ 75 V
Repetitive peak reverse voltage: ≤ 100 V
Repetitive peak forward current: ≤ 450 mA
1.3 Applications
■ High-speed switching
■ Inverse-polarity protection
1.4 Quick reference data
Table 1:
Symbol
Quick reference data
Parameter
Conditions
[1]
Min
Typ
Max
Unit
IF
forward current
-
-
200
mA
IFRM
repetitive peak forward
current
-
-
450
mA
VR
reverse voltage
-
-
75
V
VF
forward voltage
-
-
1000
mV
trr
reverse recovery time
-
-
4
ns
IF = 100 mA
[2]
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA
BAS32L
Philips Semiconductors
High-speed switching diode
2. Pinning information
Table 2:
Pinning
Pin
Description
1
cathode
2
anode
Simplified outline
Symbol
[1]
k
a
sym006
[1]
The marking band indicates the cathode.
3. Ordering information
Table 3:
Ordering information
Type number
Package
Name
Description
Version
BAS32L
-
hermetically sealed glass surface mounted package;
2 connectors
SOD80C
Table 4:
Marking codes
4. Marking
Type number
Marking code [1]
BAS32L
Marking band
[1]
black: made in Philippines
brown: made in China
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VRRM
repetitive peak reverse
voltage
VR
reverse voltage
IF
forward current
IFRM
repetitive peak forward
current
IFSM
non-repetitive peak forward
current
Conditions
[1]
total power dissipation
Unit
V
-
75
V
-
200
mA
450
mA
tp = 1 µs
-
4
A
tp = 1 ms
-
1
A
-
0.5
A
-
500
mW
square wave
Tamb = 25 °C
9397 750 14605
Product data sheet
Max
100
[2]
tp = 1 s
Ptot
Min
-
[1]
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 04 — 22 March 2005
2 of 11
BAS32L
Philips Semiconductors
High-speed switching diode
Table 5:
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Tj
Conditions
Min
Max
Unit
junction temperature
-
200
°C
Tamb
ambient temperature
−65
+200
°C
Tstg
storage temperature
−65
+200
°C
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Tj = 25 °C prior to surge
6. Thermal characteristics
Table 6:
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance from
junction to ambient
Rth(j-sp)
thermal resistance from
junction to solder point
[1]
in free air
[1]
Min
Typ
Max
Unit
-
-
350
K/W
-
-
300
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 7:
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VF
forward voltage
IF = 5 mA
620
-
750
mV
IF = 100 mA
-
-
1000
mV
IR
reverse current
IF = 100 mA; Tj = 100 °C
-
-
930
mV
VR = 20 V
-
-
25
nA
VR = 75 V
-
-
5
µA
VR = 20 V; Tj = 150 °C
-
-
50
µA
VR = 75 V; Tj = 150 °C
-
-
100
µA
VR = 0 V; f = 1 MHz
-
-
2
pF
Cd
diode
capacitance
trr
reverse recovery
time
[1]
-
-
4
ns
VFR
forward recovery
voltage
[2]
-
-
2.5
V
[1]
When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA
[2]
When switched from IF = 50 mA; tr = 20 ns
9397 750 14605
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 04 — 22 March 2005
3 of 11
BAS32L
Philips Semiconductors
High-speed switching diode
mbg451
300
mbg464
600
IF
(mA)
IF
(mA)
200
400
(1)
(2)
(3)
200
100
0
0
0
100
0
200
Tamb (°C)
1
VF (V)
2
(1) Tj = 175 °C; typical values
Mounted on an FR4 PCB; standard footprint
(2) Tj = 25 °C; typical values
(3) Tj = 25 °C; maximum values
Fig 1. Maximum permissible forward current as a
function of ambient temperature
mbg704
102
Fig 2. Forward current as a function of forward
voltage
mgd006
103
IR
(mA)
IFSM
(A)
102
10
(1)
(2)
(3)
10
1
1
10−1
10−1
1
10
102
103
104
10−2
0
100
tp (µs)
Based on square wave currents
(1) VR = 75 V; maximum values
Tj = 25 °C prior to surge
(2) VR = 75 V; typical values
Tj (oC)
200
(3) VR = 20 V; typical values
Fig 3. Maximum permissible non-repetitive peak
forward current as a function of pulse duration
Fig 4. Reverse current as a function of junction
temperature
9397 750 14605
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 04 — 22 March 2005
4 of 11
BAS32L
Philips Semiconductors
High-speed switching diode
mgd004
1.2
Cd
(pF)
1.0
0.8
0.6
0.4
0
10
VR (V)
20
Tj = 25 °C; f = 1 MHz
Fig 5. Diode capacitance as a function of reverse voltage; typical values
9397 750 14605
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 04 — 22 March 2005
5 of 11
BAS32L
Philips Semiconductors
High-speed switching diode
8. Test information
tr
tp
t
D.U.T.
10 %
+ IF
IF
RS = 50 Ω
SAMPLING
OSCILLOSCOPE
V = VR + IF × RS
trr
t
Ri = 50 Ω
(1)
90 %
VR
mga881
input signal
output signal
Input signal: Reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ ≤ 0.05
Oscilloscope: Rise time tr = 0.35 ns
(1) IR = 1 mA
Fig 6. Reverse recovery time test circuit and waveforms
I
1 kΩ
RS = 50 Ω
D.U.T.
450 Ω
I
V
90 %
OSCILLOSCOPE
VFR
Ri = 50 Ω
10 %
t
tr
t
tp
input signal
output signal
mga882
Input signal: Forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty factor δ ≤ 0.005
Fig 7. Forward recovery voltage test circuit and waveforms
9397 750 14605
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 04 — 22 March 2005
6 of 11
BAS32L
Philips Semiconductors
High-speed switching diode
9. Package outline
Hermetically sealed glass surface mounted package; 2 connectors
k
SOD80C
a
(1)
D
L
L
H
DIMENSIONS (mm are the original dimensions)
0
UNIT
D
H
L
mm
1.60
1.45
3.7
3.3
0.3
1
2 mm
scale
Note
1. The marking band indicates the cathode.
REFERENCES
OUTLINE
VERSION
IEC
SOD80C
100H01
JEDEC
EUROPEAN
PROJECTION
JEITA
ISSUE DATE
97-06-20
05-01-26
Fig 8. Package outline SOD80C
10. Packing information
Table 8:
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code. [1]
Type number
BAS32L
[1]
Package
SOD80C
Description
Packing quantity
4 mm pitch, 8 mm tape and reel
2500
10000
-115
-135
For further information and the availability of packing methods, see Section 16.
9397 750 14605
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 04 — 22 March 2005
7 of 11
BAS32L
Philips Semiconductors
High-speed switching diode
11. Soldering
4.55
4.30
2.30
solder lands
solder resist
2.25 1.70 1.60
occupied area
solder paste
0.90
(2x)
MSA435
Dimensions in mm
Fig 9. Reflow soldering footprint SOD80C
6.30
4.90
2.70
1.90
solder lands
solder resist
occupied area
2.90 1.70
tracks
MSA461
Dimensions in mm
Fig 10. Wave soldering footprint SOD80C
9397 750 14605
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 04 — 22 March 2005
8 of 11
BAS32L
Philips Semiconductors
High-speed switching diode
12. Revision history
Table 9:
Revision history
Document ID
Release date
Data sheet status
Change notice
Doc. number
Supersedes
BAS32L_4
20050322
Product data sheet
-
9397 750 14605
BAS32L_3
Modifications:
•
The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors.
•
•
Section 4 “Marking” added
•
•
Table 6 “Thermal characteristics” Rth(j-tp) thermal resistance from junction to tie-point redefined to
Rth(j-sp) thermal resistance from junction to solder point
Section 10 “Packing information” added
Section 11 “Soldering” added
BAS32L_3
20020123
Product specification
-
9397 750 09264
BAS32L_2
BAS32L_2
19960910
Product specification
-
117021
BAS32L_1
BAS32L_1
19960423
Product specification
-
113051
-
9397 750 14605
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 04 — 22 March 2005
9 of 11
BAS32L
Philips Semiconductors
High-speed switching diode
13. Data sheet status
Level
Data sheet status [1]
Product status [2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
14. Definitions
15. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
16. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
9397 750 14605
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 04 — 22 March 2005
10 of 11
BAS32L
Philips Semiconductors
High-speed switching diode
17. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Packing information. . . . . . . . . . . . . . . . . . . . . . 7
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Contact information . . . . . . . . . . . . . . . . . . . . 10
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 22 March 2005
Document number: 9397 750 14605
Published in The Netherlands