SUM90N03-2m2P Datasheet

SUM90N03-2m2P
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
30
a, e
RDS(on) ()
ID (A)
0.0022 at VGS = 10 V
90
0.0027 at VGS = 4.5 V
90
Qg (Typ.)
82 nC
TO-263
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
D
• OR-ing
• Server
G
D
G
S
Top View
S
Ordering Information: SUM90N03-2m2P-E3 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 20
TC = 70 °C
TA = 25 °C
90e
ID
33b, c
Pulsed Drain Current
IDM
200
Avalanche Current Pulse
IAS
36
EAS
64.8
Single Pulse Avalanche Energy
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
90
IS
TC = 70 °C
TA = 25 °C
A
250a
175
PD
W
3.75b, c
2.63b, c
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
mJ
a, e
3.13b, c
TC = 25 °C
Maximum Power Dissipation
A
29.8b, c
TA = 70 °C
L = 0.1 mH
V
90a, e
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
Unit
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Case
Symbol
Typical
Maximum
t  10 s
RthJA
32
40
Steady State
RthJC
0.5
0.6
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 90 °C/W.
e. Calculated based on maximum junction temperature. Package limitation current is 90 A.
Document Number: 74342
S12-0680-Rev. C, 26-Mar-12
For more information please contact: [email protected]
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM90N03-2m2P
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min .
VDS
VGS = 0 V, ID = 250 µA
30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
V
35
ID = 250 µA
mV/°C
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
2.5
V
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
10
Gate-Source Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VDS 5 V, VGS = 10 V
- 7.5
1.5
90
µA
A
VGS = 10 V, ID = 32 A
0.0018
0.0022
VGS = 4.5 V, ID = 29 A
0.0022
0.0027
VDS = 15 V, ID = 32 A
160

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
12065
VDS = 15 V, VGS = 0 V, f = 1 MHz
970
VDS = 15 V, VGS = 10 V, ID = 32 A
VDS = 15 V, VGS = 4.5 V, ID = 29 A
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
f = 1 MHz
VDD = 15 V, RL = 0.555 
ID  27 A, VGEN = 10 V, Rg = 1 
123
34
1.4
2.1
18
27
11
17
105
10
15
td(on)
55
83
180
270
55
83
12
18
VDD = 15 V, RL = 0.625 
ID  24 A, VGEN = 4.5 V, Rg = 1 
tf
Fall Time
81.5
70
td(off)
Turn-Off Delay Time
257
tf
tr
Rise Time
171
nC
29
td(on)
Turn-On Delay Time
pF
1725

ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
90
200
IS = 22 A
IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C
A
0.8
1.2
V
52
78
ns
70.2
105
nC
27
25
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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For more information please contact: [email protected]
Document Number: 74342
S12-0680-Rev. C, 26-Mar-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM90N03-2m2P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
3.0
90
VGS = 10 thru 4 V
2.4
ID - Drain Current (A)
ID - Drain Current (A)
75
60
45
30
1.8
1.2
TC = 125 °C
0.6
15
0.0
0
0.0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
V GS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
4
Transfer Characteristics
0.0030
RDS(on) - Drain-to-Source On-Resistance (Ω)
600
TC = 25 °C
500
G fs - Transconductance (S)
- 55 °C
TC = 25 °C
VGS = 3 V
VGS = 2 V
TC = 125 °C
400
300
TC = - 55 °C
200
100
0
0
10
20
30
40
50
60
70
80
90
0.0025
VGS = 4.5 V
0.0020
VGS = 10 V
0.0015
0.0010
0
15
30
45
60
75
90
150
180
ID - Drain Current (A)
ID - Drain Current (A)
Transconductance
RDS(on) vs. Drain Current
10
15000
C - Capacitance (pF)
12000
V G S - Gate-to-Source Voltage (V)
ID = 32 A
Ciss
9000
6000
Coss
3000
Crss
0
0
8
VDS = 15 V
6
VDS = 24 V
4
2
0
6
12
18
24
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 74342
S12-0680-Rev. C, 26-Mar-12
30
0
30
60
90
120
Qg - Total Gate Charge (nC)
Gate Charge
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM90N03-2m2P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
VGS = 10 V, ID = 32 A
VGS = 4.5 V, ID = 29.8 A
10
1.4
IS - Source Current (A)
RDS(on) - On-Resistance (Normalized)
1.6
1.2
1.0
0.8
T J = 150 °C
1
T J = 25 °C
0.1
0.01
0.6
- 50
0.001
- 25
0
25
50
75
100
125
150
0
175
0.2
0.4
0.6
0.8
VSD - Source-to-Drain Voltage (V)
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
1
Forward Diode Voltage vs. Temperature
0.004
2.8
TA = 125 °C
2.4
0.003
ID = 250 µA
VGS(th) (V)
RDS(on) - On-Resistance (Ω)
ID = 32 A
0.002
TA = 25 °C
2.0
1.6
0.001
1.2
0.000
0
2
4
6
8
10
0.8
- 50
- 25
0
25
50
75
100
VGS - Gate-to-Source Voltage (V)
TJ - Temperature (°C)
RDS(on) vs. VGS vs. Temperature
Threshold Voltage
125
150
175
1000
Limited by rDS(on)*
I D - Drain Current (A)
100
100 µs
1 ms
10
10 ms
100 ms
1
1s
10 s
DC
0.1
0.01
TA = 25 °C
Single Pulse
0.001
0.1
*VGS
BVDSS Limited
1
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which rDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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For more information please contact: [email protected]
Document Number: 74342
S12-0680-Rev. C, 26-Mar-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM90N03-2m2P
Vishay Siliconix
300
300
250
250
Power Dissipation (W)
ID - Drain Current (A)
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
200
150
Package Limited
100
200
150
100
50
50
0
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power Derating
150
175
* The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74342
Document Number: 74342
S12-0680-Rev. C, 26-Mar-12
For more information please contact: [email protected]
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-263 (D2PAK): 3-LEAD
-B-
L2
6
E1
K
D4
-A-
c2
D2
D3
A
E
L3
L
D
D1
E3
A
A
b2
b
e
c
Detail “A”
E2
0.010 M A M
2 PL
0°
L4
-5
°
INCHES
L1
DETAIL A (ROTATED 90°)
c*
c
c1
c1
M
b
b1
SECTION A-A
MIN.
MAX.
MIN.
MAX.
A
0.160
0.190
4.064
4.826
b
0.020
0.039
0.508
0.990
b1
0.020
0.035
0.508
0.889
1.397
b2
0.045
0.055
1.143
Thin lead
0.013
0.018
0.330
0.457
Thick lead
0.023
0.028
0.584
0.711
Thin lead
0.013
0.017
0.330
0.431
Thick lead
0.023
0.027
0.584
0.685
c2
0.045
0.055
1.143
1.397
D
0.340
0.380
8.636
9.652
D1
0.220
0.240
5.588
6.096
D2
0.038
0.042
0.965
1.067
D3
0.045
0.055
1.143
1.397
D4
0.044
0.052
1.118
1.321
E
0.380
0.410
9.652
10.414
E1
0.245
-
6.223
-
E2
0.355
0.375
9.017
9.525
E3
0.072
0.078
1.829
1.981
e
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by
max. 8 mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
Revison: 30-Sep-13
MILLIMETERS
DIM.
0.100 BSC
2.54 BSC
K
0.045
0.055
1.143
1.397
L
0.575
0.625
14.605
15.875
L1
0.090
0.110
2.286
2.794
L2
0.040
0.055
1.016
1.397
L3
0.050
0.070
1.270
1.778
L4
M
0.010 BSC
-
0.254 BSC
0.002
-
0.050
ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843
1
Document Number: 71198
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AN826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
0.420
0.355
0.635
(16.129)
(9.017)
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 73397
11-Apr-05
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Revision: 02-Oct-12
1
Document Number: 91000