SUM40010EL Datasheet

SUM40010EL
www.vishay.com
Vishay Siliconix
N-Channel 40 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
40
RDS(on) (Ω) MAX.
ID (A) d
0.0016 at VGS = 10 V
120
0.0019 at VGS = 4.5 V
120
Qg (TYP.)
150
• TrenchFET® power MOSFET
• Maximum 175 °C junction temperature
• Qgd/Qgs ratio < 0.5
• Operable with logic-level gate drive
• 100 % Rg and UIS tested
TO-263
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
D
• Power supply
- Secondary synchronous rectification
S
• DC/DC converter
D
Top View
G
• Power tools
G
• Motor drive switch
Ordering Information:
SUM40010EL-GE3 (lead (Pb)-free and halogen-free)
• DC/AC inverter
• Battery management
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
40
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
Pulsed Drain Current (t = 100 μs)
Avalanche Current
Single Avalanche Energy a
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
ID
IDM
L = 0.1 mH
TC = 25 °C
TC = 125 °C
V
120 d
120 d
300
IAS
80
EAS
320
PD
UNIT
375 b
125 b
A
mJ
W
TJ, Tstg
-55 to +175
°C
UNIT
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
Junction-to-Ambient (PCB Mount) c
RthJA
40
Junction-to-Case (Drain)
RthJC
0.4
°C/W
Notes
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR4 material).
d. Package limited.
S15-2184-Rev. A, 14-Sep-15
Document Number: 66984
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM40010EL
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
VDS
VGS = 0 V, ID = 250 μA
40
-
-
VGS(th)
VDS = VGS, ID = 250 μA
1.2
-
2.5
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 250
VDS = 40 V, VGS = 0 V
-
-
1
VDS = 40 V, VGS = 0 V, TJ = 125 °C
-
-
150
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current a
ID(on)
Drain-Source On-State Resistance a
Forward Transconductance a
V
nA
μA
VDS = 40 V, VGS = 0 V, TJ = 175 °C
-
-
5
mA
VDS ≥ 10 V, VGS = 10 V
120
-
-
A
VGS = 10 V, ID = 30 A
-
0.00127
0.00160
VGS = 4.5 V, ID = 20 A
-
0.00152
0.00190
VDS = 15 V, ID = 30 A
-
174
-
-
11 155
-
-
7410
-
-
880
230
RDS(on)
gfs
Ω
S
Dynamic b
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge c
Qg
Gate-Source Charge c
Qgs
Gate-Drain Charge c
Qgd
Gate Resistance
VDS = 20 V, VGS = 10 V, ID = 20 A
Rg
Turn-On Delay Time c
Rise Time c
Turn-Off Delay Time
VGS = 0 V, VDS = 30 V, f = 1 MHz
tr
c
Fall Time c
f = 1 MHz
td(on)
td(off)
VDD = 20 V, RL = 5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
tf
-
150
-
32
-
-
11
-
0.32
1.6
3.2
-
16
32
-
20
40
-
65
100
-
17
35
pF
nC
Ω
ns
Drain-Source Body Diode Ratings and Characteristics b (TC = 25 °C)
Pulsed Current (t = 100 μs)
ISM
Forward Voltage a
VSD
Reverse Recovery Time
Peak Reverse Recovery Charge
Reverse Recovery Charge
IF = 10 A, VGS = 0 V
trr
IRM(REC)
Qrr
IF = 41 A, di/dt = 100 A/μs
-
-
300
-
0.8
1.5
A
V
-
135
203
ns
-
5
10
A
-
0.340
0.510
μC
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-2184-Rev. A, 14-Sep-15
Document Number: 66984
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM40010EL
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
160
200
VGS = 10 V thru 4 V
120
100
ID - Drain Current (A)
ID - Drain Current (A)
150
VGS = 3 V
50
TC = 25 °C
80
TC = 125 °C
TC = - 55 °C
40
0
0
0.5
1
1.5
2
2.5
0
3
0
1
VDS - Drain-to-Source Voltage (V)
2
3
4
VGS - Gate-to-Source Voltage (V)
5
Transfer Characteristics
Output Characteristics
0.003
300
TC = 25 °C
0.0025
TC = - 55 °C
RDS(on) - On-Resistance (Ω)
gfs - Transconductance (S)
240
180
TC = 125 °C
120
60
0.002
VGS =4.5 V
0.0015
VGS = 10 V
0.001
0.0005
0
0
0
10
20
30
40
50
0
20
40
80
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
18 000
100
10
VDS = 10 V
VGS - Gate-to-Source Voltage (V)
ID = 20 A
13 500
C - Capacitance (pF)
60
ID - Drain Current (A)
C iss
9000
Coss
4500
Crss
0
8
VDS = 20 V
6
VDS = 32 V
4
2
0
0
10
20
30
VDS - Drain-to-Source Voltage (V)
Capacitance
S15-2184-Rev. A, 14-Sep-15
40
0
40
80
120
Qg - Total Gate Charge (nC)
160
Gate Charge
Document Number: 66984
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM40010EL
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
1.7
2.3
1.9
1.45
VGS(th) (V)
RDS(on) - On-Resistance (Normalized)
ID = 250 μA
VGS = 10 V, ID = 30 A
1.2
VGS = 4.5 V, ID = 30 A
1.5
1.1
0.95
0.7
0.7
- 50 - 25
0
25
50
75
100
125
150
0.3
- 50 - 25
175
0
75
100
125
150
175
125 150
175
51
0.005
ID = 250 μA
VDS (V) Drain-to-Source Voltage
ID = 30 A
0.004
RDS(on) - On-Resistance (Ω)
50
Threshold Voltage
On-Resistance vs. Junction Temperature
0.003
TJ = 125 °C
0.002
TJ = 25 °C
0.001
0
0
2
4
6
8
49
47
45
43
- 50
10
- 25
VGS - Gate-to-Source Voltage (V)
0
25
50
75
100
TJ - Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
440
100
330
TJ = 150 °C
ID - Drain Current (A)
IS - Source Current (A)
25
TJ - Temperature (°C)
TJ - Junction Temperature (°C)
10
TJ = 25 °C
1
220
110
0
0.1
0.0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
S15-2184-Rev. A, 14-Sep-15
1.2
0
25
50
75
100
125
150
175
TC - Case Temperature (°C)
Current De-rating
Document Number: 66984
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM40010EL
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
1000
IDM Limited
100 μs
ID Limited
Limited by RDS(on)*
10
IDAV (A)
ID - Drain Current (A)
100
1 ms
100
10 ms
100 ms, DC DC
1
0.1
0.1
150 °C
BVDSS Limited
TC = 25 °C
Single Pulse
10
0.00001
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
0.0001
0.001
25 °C
0.01
Time (s)
Safe Operating Area
Single Pulse Avalanche Current Capability vs. Time
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.001
0.0001
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S15-2184-Rev. A, 14-Sep-15
Document Number: 66984
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM40010EL
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction to Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?66984.
S15-2184-Rev. A, 14-Sep-15
Document Number: 66984
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-263 (D2PAK): 3-LEAD
-B-
L2
6
E1
K
D4
-A-
c2
D2
D3
A
E
L3
L
D
D1
E3
A
A
b2
b
e
c
Detail “A”
E2
0.010 M A M
2 PL
0°
L4
-5
°
INCHES
L1
DETAIL A (ROTATED 90°)
c*
c
c1
c1
M
b
b1
SECTION A-A
MIN.
MAX.
MIN.
MAX.
A
0.160
0.190
4.064
4.826
b
0.020
0.039
0.508
0.990
b1
0.020
0.035
0.508
0.889
1.397
b2
0.045
0.055
1.143
Thin lead
0.013
0.018
0.330
0.457
Thick lead
0.023
0.028
0.584
0.711
Thin lead
0.013
0.017
0.330
0.431
Thick lead
0.023
0.027
0.584
0.685
c2
0.045
0.055
1.143
1.397
D
0.340
0.380
8.636
9.652
D1
0.220
0.240
5.588
6.096
D2
0.038
0.042
0.965
1.067
D3
0.045
0.055
1.143
1.397
D4
0.044
0.052
1.118
1.321
E
0.380
0.410
9.652
10.414
E1
0.245
-
6.223
-
E2
0.355
0.375
9.017
9.525
E3
0.072
0.078
1.829
1.981
e
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by
max. 8 mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
Revison: 30-Sep-13
MILLIMETERS
DIM.
0.100 BSC
2.54 BSC
K
0.045
0.055
1.143
1.397
L
0.575
0.625
14.605
15.875
L1
0.090
0.110
2.286
2.794
L2
0.040
0.055
1.016
1.397
L3
0.050
0.070
1.270
1.778
L4
M
0.010 BSC
-
0.254 BSC
0.002
-
0.050
ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843
1
Document Number: 71198
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AN826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
0.420
0.355
0.635
(16.129)
(9.017)
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 73397
11-Apr-05
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1
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
1
Document Number: 91000