Si4833BDY Datasheet

Si4833BDY
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET with Schottky Diode
FEATURES
MOSFET PRODUCT SUMMARY
VDS (V)
- 30
RDS(on) ()
ID (A)a
0.068 at VGS = - 10 V
- 4.6
0.110 at VGS = - 4.5 V
- 3.4
• Halogen-free According to IEC 61249-2-21
Definition
• LITTLE FOOT® Plus Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
4.6
SCHOTTKY PRODUCT SUMMARY
APPLICATIONS
VKA (V)
VF (V)
Diode Forward Voltage
ID (A)a
30
0.44 V at 1 A
2
• Battery Management in Notebook PC
• Non-synchronous Buck Converter in HDD
S
K
D
A
SO-8
A
1
8
K
A
2
7
K
S
3
6
D
G
4
5
D
G
Top View
Ordering Information: Si4833BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current (TJ = 150 °C) (MOSFET)
Symbol
VDS
VKA
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
- 3.8b, c
- 3b, c
- 20
-2
IS
- 1.4b, c
- 1.4b
-2
2.75
1.75
IF
IFM
Average Forward Current (Schottky)
Pulsed Forward Current (Schottky)
Maximum Power Dissipation (MOSFET and Schottky)
ID
IDM
Pulsed Drain Current (MOSFET) (t = 300 µs)
Continuous Source Current (MOSFET Diode Conduction)
Limit
- 30
- 30
± 20
- 4.6
- 3.6
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
1.75b, c
1.10b, c
- 55 to 150
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET and Schottky)b, c, d
Maximum Junction-to-Foot (Drain) (MOSFET and Schottky)
Symbol
RthJA
RthJF
Typical
60
35
Maximum
71.5
45
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on FR4 board.
c. t  10 s.
d. Maximum under steady state conditions is 120 °C/W.
Document Number: 67537
S11-1649-Rev. B, 15-Aug-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4833BDY
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VDS = 0 V, ID = - 250 µA
- 30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VGS(th)/TJ
ID = - 250 µA
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Gate Threshold Voltage
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
V
- 20
mV/°C
3.9
-1
- 1.8
- 2.5
V
± 100
nA
VDS = - 30 V, VGS = 0 V
-1
VDS = - 30 V, VGS = 0 V, TJ = 75 °C
- 10
VDS - 5 V, VGS = - 10 V
-5
µA
A
VGS = - 10 V, ID = - 3.6 A
0.055
0.068
VGS = - 4.5 V, ID = - 2.8 A
0.092
0.110
VDS = - 15 V, ID = - 3.6 A
6.5

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Rg
Gate Resistance
350
VDS = - 15 V, VGS = 0 V, f = 1 MHz
VDS = - 15 V, VGS = - 10 V, ID = - 5 A
VDS = - 15 V, VGS = - 4.5 V, ID = - 5 A
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
f = 1 MHz
VDD = - 15 V, RL = 3 
ID  - 5 A, VGEN = - 4.5 V, Rg = 1 
7
1.3
1.5
7.3
14.5
28
50
73
140
24
8
16
td(on)
6
12
VDD = - 15 V, RL = 3 
ID  - 5 A, VGEN = - 10 V, Rg = 1 
tf
Fall Time
14
12
td(off)
Turn-Off Delay Time
9
4.6
tf
tr
Rise Time
pF
nC
2.1
td(on)
Turn-On Delay Time
75
63
9
18
12
24
6
12

ns
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
a
TC = 25 °C
- 4.6
- 20
IS = - 2 A, VGS = 0 V
A
- 0.83
- 1.2
Body Diode Reverse Recovery Time
trr
12
24
ns
Body Diode Reverse Recovery Charge
Qrr
6
12
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = - 2 A, dI/dt = 100 A/µs, TJ = 25 °C
8
4
V
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
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Document Number: 67537
S11-1649-Rev. B, 15-Aug-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4833BDY
Vishay Siliconix
SCHOTTKY SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Forward Voltage Drop
VF
Maximum Reverse Leakage Current
Irm
Junction Capacitance
CT
Test Conditions
IF = 1 A
IF = 1 A, TJ = 125 °C
VR = 30 V
VR = 30 V, TJ = 75 °C
VR = 30 V, TJ = 125 °C
VR = 15 V
Min.
Typ.
0.36
0.29
0.03
0.6
7.5
5.3
Max.
0.44
0.35
0.2
5
60
Unit
V
mA
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 67537
S11-1649-Rev. B, 15-Aug-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4833BDY
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
3.0
2.5
VGS = 10 V thru 5 V
ID - Drain Current (A)
ID - Drain Current (A)
16
12
VGS = 4 V
8
4
2.0
3.0
4.0
0
0.0
5.0
1.0
TC = - 55 °C
2.0
3.0
4.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
5.0
600
0.150
480
0.120
VGS = 4.5 V
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
TC = 25 °C
TC = 125 °C
0
1.0
1.5
1.0
VGS = 3 V
0.0
2.0
0.090
0.060
VGS = 10 V
Ciss
360
240
0.030
120
0.000
0
Coss
Crss
0
2
4
6
ID - Drain Current (A)
8
10
0
6
12
On-Resistance vs. Drain Current and Gate Voltage
24
30
Capacitance
10
1.5
ID = 5 A
ID = 3.6 A
8
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
18
VDS - Drain-to-Source Voltage (V)
VDS = 15 V
6
VDS = 10 V
VDS = 20 V
4
2
0
0
2
4
6
8
Qg - Total Gate Charge (nC)
Gate Charge
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4
10
VGS = 10 V
1.3
VGS = 4.5 V
1.1
0.9
0.7
0.5
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 67537
S11-1649-Rev. B, 15-Aug-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4833BDY
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
0.5
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 3.6 A
1
TJ = 150 °C
TJ = 25 °C
0.1
0.01
0.4
0.3
0.2
TJ = 125 °C
0.1
0.001
0.0
TJ = 25 °C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.6
10
50
0.4
40
ID = 5 mA
0.2
Power (W)
VGS(th) - Variance (V)
ID = 250 μA
0
- 0.2
20
10
- 0.4
- 50
30
- 25
0
25
50
75
100
125
0
0.001
150
0.01
TJ - Temperature (°C)
Threshold Voltage
0.1
Time (s)
1
10
Single Pulse Power, Junction-to-Ambient
100
IDM Limited
ID - Drain Current (A)
10
ID Limited
1 ms
1
10 ms
Limited by RDS(on)*
100 ms
0.1
TC = 25 °C
Single Pulse
0.01
0.01
1s
10 s
DC
BVDSS Limited
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
Document Number: 67537
S11-1649-Rev. B, 15-Aug-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4833BDY
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
6
ID - Drain Current (A)
4
3
2
1
0
0
25
50
75
100
TC - Case Temperature (°C)
125
150
3.5
1.25
2.8
1.00
2.1
0.75
Power (W)
Power (W)
Current Derating*
1.4
0.7
0.50
0.25
0.0
0.00
0
25
50
75
100
125
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
150
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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Document Number: 67537
S11-1649-Rev. B, 15-Aug-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4833BDY
Vishay Siliconix
MOSFETS TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 120 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 67537
S11-1649-Rev. B, 15-Aug-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4833BDY
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
0.01
I F - Forward Current (A)
I R - Reverse Current (mA)
0.1
20 V
0.001
30 V
0.0001
1
TJ = 150 °C
TJ = 25 °C
0.1
0.01
0.00001
0.001
0.000001
0
25
50
75
100
125
TJ - Junction Temperature (°C)
0
150
0.1
0.2
0.3
0.4
0.5
VF - Forward Voltage Drop (V)
Forward Voltage Drop
Reverse Current vs. Junction Temperature
CT - Junction Capacitance (pF)
500
400
300
200
100
0
0
6
12
18
24
30
VKA - Reverse Voltage (V)
Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67537.
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Document Number: 67537
S11-1649-Rev. B, 15-Aug-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
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Revision: 02-Oct-12
1
Document Number: 91000