SiHG17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. • Optimal Design 650 RDS(on) max. at 25 °C () VGS = 10 V Qg (Max.) (nC) 90 Qgs (nC) 14 Qgd (nC) 22 Configuration - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 0.340 - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) • Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-of-Merit (FOM): Ron x Qg Single D TO-247AC - Fast Switching • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 G S APPLICATIONS D S G • Consumer Electronics - Displays (LCD or Plasma TV) • Lighting • Industrial - Welding - Induction Heating - Motor Drives - Battery Chargers N-Channel MOSFET • SMPS ORDERING INFORMATION Package TO-247AC Lead (Pb)-free SiHG17N60D-E3 Lead (Pb)-free and Halogen-free SiHG17N60D-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ± 30 Continuous Drain Current (TJ = 150 °C) VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Currenta ID UNIT V 17 10.7 A IDM 48 2.22 W/°C Single Pulse Avalanche Energyb EAS 165.6 mJ Maximum Power Dissipation PD 277.8 W TJ, Tstg - 55 to + 150 °C Linear Derating Factor Operating Junction and Storage Temperature Range Drain-Source Voltage Slope Reverse Diode TJ = 125 °C dV/dtd Soldering Recommendations (Peak Temperature)c for 10 s dV/dt 24 0.2 300 V/ns °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25 , IAS = 12 A. c. 1.6 mm from case. d. ISD ID, starting TJ = 25 °C. S12-0685-Rev. A, 02-Apr-12 Document Number: 91496 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHG17N60D www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SYMBOL TYP. MAX. UNIT RthJA RthJC - 62 0.45 °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage (N) VDS VGS = 0 V, ID = 250 μA 600 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 0.7 - V/°C VGS(th) VDS = VGS, ID = 250 μA 3 - 5 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V - - 1 VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 100 Drain-Source On-State Resistance Forward Transconductancea RDS(on) gfs VGS = 10 V ID = 8 A VDS = 50 V, ID = 8 A μA - 0.275 0.340 - 6.2 - S Dynamic Input Capacitance Ciss VGS = 0 V, - 1780 - Output Capacitance Coss VDS = 100 V, - 140 - Reverse Transfer Capacitance Crss f = 1 MHz - 15 - - 45 90 - 14 - Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd - 22 - Turn-On Delay Time td(on) - 22 45 tr VDD = 300 V, ID = 8 A Rg = 9.1 , VGS = 10 V - 56 85 - 37 75 - 30 60 f = 1 MHz, open drain - 1.6 - - - 17 - - 48 Rise Time Turn-Off Delay Time td(off) Fall Time tf Internal Gate Resistance Rg VGS = 10 V ID = 8 A, VDS = 480 V pF nC ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Current IRRM MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IS = 8 A, VGS = 0 V TJ = 25 °C, IF = IS, dI/dt = 100 A/μs, VR = 20 V S - - 1.5 V - 633 950 ns - 7 15 μC - 21 42 A Note a. Repetitive rating; pulse width limited by maximum junction temperature. S12-0685-Rev. A, 02-Apr-12 Document Number: 91496 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHG17N60D www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 3.0 50 TOP 15V 14V 13V 12V 11V 10V 9.0V 8.0V 7.0V 6.0V BOTYTOM 5.0 30 TJ = 25ɗ 20 10 ID = 10 A 2.5 RDS(on) - On-Resistance (Normalized) ID - Drain Current (A) 40 VGS = 10 V 2.0 1.5 1.0 0.5 7V 0.0 0 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) - 60 - 40 - 20 30 0 20 40 60 80 100 120 140 160 TJ - Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature Fig. 1 - Typical Output Characteristics, TC = 150 °C 30 10000 TOP 15V 14V 13V 12V 11V 10V 9.0V 8.0V 7.0V 6.0V BOTYTOM 5.0V 18 TJ = 150ɗ C - Capacitance (pF) ID - Drain Current (A) 24 7V 12 Ciss 1000 Coss Crss 100 6 10 0 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) 0 30 Fig. 2 - Typical Output Characteristics, TC = 150 °C 600 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 20 60 18 50 VGS - Gate-to-Source Voltage (V) I D,Drain- to-Source Current (A) 200 400 VDS - Drain-to-Source Voltage (V) 40 30 20 TJ = 150 °C 10 VDS = 300 V ID = 12 A 16 VDS =120 V 14 VDS = 480 V 12 10 8 6 4 2 TJ = 25 °C 0 0 0 5 10 15 20 VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics S12-0685-Rev. A, 02-Apr-12 25 0.0 20.0 40.0 60.0 Qg - Total Gate Charge (nC) 80.0 Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91496 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHG17N60D www.vishay.com Vishay Siliconix 20.00 100 IS - Source Current (A) TJ = 150 °C 15.00 ID,Drain Current (A) 10 TJ = 25 °C 1 10.00 5.00 0.00 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 1.4 25 1.6 VDS , Drain -to -Source Breakdown Voltage (V) ID - Drain Current (A) 125 150 725 OPERATION IN THIS AREA Limited by RDS(on) 100 μs Limited by RDS(on) 1 ms 1 10 ms 0.1 100 Fig. 9 - Maximum Drain Current vs. Case Temperature I DM Limited 10 75 TJ - Temperature (°C) Fig. 7 - Typical Source-Drain Diode Forward Voltage 100 50 700 675 650 625 600 575 TC= 25 °C TJ= 150 °C Single Pulse BVDSS Limited 550 1 10 100 1000 -60 -40 -20 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Fig. 8 - Maximum Safe Operating Area 0 20 40 60 80 100 120 140 160 TJ,Temperature (°C) Fig. 10 - Typical Drain-to-Source Voltage vs. Temperature Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case S12-0685-Rev. A, 02-Apr-12 Document Number: 91496 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHG17N60D www.vishay.com VDS RD VDS VGS Vishay Siliconix tp VDD D.U.T. RG + - VDD VDS 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % IAS Fig. 12 - Switching Time Test Circuit Fig. 15 - Unclamped Inductive Waveforms VDS 90 % QG 10 V QGS 10 % VGS QGD VG td(on) td(off) tf tr Charge Fig. 13 - Switching Time Waveforms Fig. 16 - Basic Gate Charge Waveform Current regulator Same type as D.U.T. L Vary tp to obtain required IAS VDS 50 kΩ D.U.T RG 12 V + - IAS 0.2 µF 0.3 µF V DD + D.U.T. - VDS 10 V tp 0.01 Ω VGS 3 mA Fig. 14 - Unclamped Inductive Test Circuit IG ID Current sampling resistors Fig. 17 - Gate Charge Test Circuit S12-0685-Rev. A, 02-Apr-12 Document Number: 91496 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHG17N60D www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 18 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91496. S12-0685-Rev. A, 02-Apr-12 Document Number: 91496 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-247AC (High Voltage) A A 4 E B 3 R/2 E/2 7 ØP Ø k M DBM A2 S (Datum B) ØP1 A D2 Q 4 4 2xR (2) D1 D 1 2 4 D 3 Thermal pad 5 L1 C L A See view B 2 x b2 3xb 0.10 M C A M 4 E1 0.01 M D B M View A - A C 2x e A1 b4 Planting Lead Assignments 1. Gate 2. Drain 3. Source 4. Drain D DE (b1, b3, b5) Base metal E C (c) C c1 (b, b2, b4) (4) Section C - C, D - D, E - E View B MILLIMETERS DIM. MIN. MAX. A 4.58 5.31 A1 2.21 2.59 A2 1.17 2.49 b 0.99 1.40 b1 0.99 1.35 b2 1.53 2.39 b3 1.65 2.37 b4 2.42 3.43 b5 2.59 3.38 c 0.38 0.86 c1 0.38 0.76 D 19.71 20.82 D1 13.08 ECN: X13-0103-Rev. D, 01-Jul-13 DWG: 5971 INCHES MIN. MAX. 0.180 0.209 0.087 0.102 0.046 0.098 0.039 0.055 0.039 0.053 0.060 0.094 0.065 0.093 0.095 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.820 0.515 - DIM. D2 E E1 e Øk L L1 N ØP Ø P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 0.254 14.20 16.25 3.71 4.29 7.62 BSC 3.51 3.66 7.39 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.640 0.146 0.169 0.300 BSC 0.138 0.144 0.291 0.209 0.224 0.178 0.216 0.217 BSC Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Contour of slot optional. 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body. 4. Thermal pad contour optional with dimensions D1 and E1. 5. Lead finish uncontrolled in L1. 6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154"). 7. Outline conforms to JEDEC outline TO-247 with exception of dimension c. 8. Xian and Mingxin actually photo. Revision: 01-Jul-13 Document Number: 91360 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000