Si4114DY Datasheet

New Product
Si4114DY
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
20
RDS(on) (Ω)
ID (A)a
0.006 at VGS = 10 V
20e
0.007 at VGS = 4.5 V
20e
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
27.5 nC
APPLICATIONS
• Low-Side MOSFET for Synchronous Buck
- Game Machine
- PC
D
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
G
Top View
S
Ordering Information: Si4114DY-T1-E3 (Lead (Pb)-free)
Si4114DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Single Pulse Avalanche Current
Avalanche Energy
ID
TC = 25 °C
TA = 25 °C
IS
L = 0.1 mH
IAS
EAS
TC = 25 °C
TC = 70 °C
Maximum Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Unit
V
20e
18.2
IDM
Pulsed Drain Current
Continuous Source-Drain Diode Current
Limit
20
± 16
PD
15.2b, c
12.1b, c
50
5.1
A
2.2b, c
30
45
5.7
3.6
mJ
2.5b, c
1.6b, c
- 55 to 150
TJ, Tstg
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Symbol
RthJA
RthJF
Typical
39
18
Maximum
50
22
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
e. Package limited.
Document Number: 68394
S09-0764-Rev. B, 04-May-09
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1
New Product
Si4114DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
ΔVDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 µA
VGS(th)
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 16 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
V
19
mV/°C
- 5.3
1.0
2.1
V
± 100
nA
VDS = 20 V, VGS = 0 V
1
VDS = 20 V, VGS = 0 V, TJ = 55 °C
10
VDS ≥ 5 V, VGS = 10 V
30
µA
A
VGS = 10 V, ID = 10 A
0.0049
0.006
VGS = 4.5 V, ID = 7 A
0.0056
0.007
VDS = 10 V, ID = 10 A
55
Ω
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
3700
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
Rise Time
Fall Time
Turn-On Delay Time
Turn-Off Delay Time
8.0
VDS = 10 V, VGS = 4.5 V, ID = 10 A
nC
6.0
f = 1 MHz
VDD = 10 V, RL = 2 Ω
ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω
0.15
0.7
1.4
30
55
25
100
tf
30
55
td(on)
13
25
9
18
38
65
8
16
td(off)
VDD = 10 V, RL = 2 Ω
ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω
tf
Fall Time
95
42
13
tr
Rise Time
62
27.5
60
td(off)
Turn-Off Delay Time
pF
315
VDS = 10 V, VGS = 10 V, ID = 10 A
td(on)
Turn-On Delay Time
745
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward
Currenta
Body Diode Voltage
IS
TC = 25 °C
5.1
ISM
VSD
50
IS = 2 A
0.71
1.1
A
V
Body Diode Reverse Recovery Time
trr
26
50
ns
Body Diode Reverse Recovery Charge
Qrr
16
30
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
13
13
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 68394
S09-0764-Rev. B, 04-May-09
New Product
Si4114DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
3.0
50
VGS = 10 V thru 3 V
2.4
ID - Drain Current (A)
ID - Drain Current (A)
40
30
20
1.8
1.2
TC = 125 °C
0.6
10
TC = 25 °C
VGS = 2 V
0
0.0
0.5
1.0
1.5
2.0
TC = - 55 °C
0.0
0.0
2.5
0.8
1.6
2.4
3.2
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.0070
4.0
4500
0.0064
3600
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
Ciss
VGS = 4.5 V
0.0058
0.0052
VGS = 10 V
1800
Coss
0.0046
900
0.0040
0
0
10
20
30
40
Crss
0
50
4
8
12
16
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
20
1.7
10
ID = 10 A
ID = 10 A
VDS = 5 V
VGS = 4.5 V
1.5
8
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
2700
VDS = 10 V
6
VDS = 15 V
4
1.3
VGS = 10 V
1.1
0.9
2
0
0
13
26
39
52
65
0.7
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 68394
S09-0764-Rev. B, 04-May-09
150
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New Product
Si4114DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.05
100
ID = 10 A
TJ = 150 °C
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
10
TJ = 25 °C
1
0.1
0.01
0.001
0.0
0.04
0.03
0.02
TJ = 125 °C
0.01
TJ = 25 °C
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
VSD - Source-to-Drain Voltage (V)
10
170
ID = 250 µA
0.3
136
ID = 5 mA
Power (W)
VGS(th) - Variance (V)
8
On-Resistance vs. Gate-to-Source Voltage
0.6
- 0.3
- 0.6
- 0.9
- 50
6
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.0
4
102
68
34
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
Time (s)
TJ - Junction Temperature (°C)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited by RDS(on)*
ID - Drain Current (A)
10
1 ms
10 ms
1
100 ms
1s
10 s
0.1
DC
TA = 25 °C
Single Pulse
0.01
0.01
0.1
BVDSS
1
10
100
VDS - Drain-to-Source Voltage (V)
* VDS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 68394
S09-0764-Rev. B, 04-May-09
New Product
Si4114DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25
ID - Drain Current (A)
20
15
10
5
0
0
25
50
75
100
125
150
0
25
TC - Case Temperature (°C)
7.0
1.80
5.6
1.44
4.2
1.08
Power (W)
Power (W)
Current Derating*
2.8
0.72
0.36
1.4
0.00
0.0
0
25
50
75
100
125
150
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Foot
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68394
S09-0764-Rev. B, 04-May-09
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New Product
Si4114DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 85 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
100
10
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68394.
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Document Number: 68394
S09-0764-Rev. B, 04-May-09
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
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Revision: 02-Oct-12
1
Document Number: 91000