Si4434DY Datasheet

Si4434DY
Vishay Siliconix
N-Channel 250-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RrDS(on) (Ω)
250
ID (A)
0.155 at VGS = 10 V
3.0
0.162 at VGS = 6.0 V
2.9
• Halogen-free According to IEC 61249-2-21
Definition
• PWM-Optimized TrenchFET® Power MOSFET
• 100 % Rg Tested
• Avalanche Tested
APPLICATIONS
• Primary Side Switch In:
- Telecom Power Supplies
- Distributed Power Architectures
- Miniature Power Modules
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
D
G
Top View
Ordering Information: Si4434DY-T1-E3 (Lead (Pb)-free)
Si4434DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS
250
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
Continuous Source Current (Diode Conduction)a
Single Pulse Avalanche Energy
Maximum Power Dissipationa
IS
L = 0.1 mH
TA = 25 °C
TA = 70 °C
3.0
2.1
1.7
30
1.3
13
EAS
8.4
mJ
3.1
1.56
2.0
1.0
TJ, Tstg
Operating Junction and Storage Temperature Range
A
2.6
IAS
PD
V
2.4
IDM
Pulsed Drain Current
Avalanche Current
ID
Unit
- 55 to 150
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t ≤ 10 s
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
33
40
65
80
17
21
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72562
S09-0322-Rev. D, 02-Mar-09
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1
Si4434DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
2.0
Typ.
Max.
Unit
Static
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Gate Threshold Voltage
Drain-Source On-State Resistancea
Diode Forward Voltage
a
V
nA
VDS = 250 V, VGS = 0 V
1
VDS = 250 V, VGS = 0 V, TJ = 55 °C
15
VDS ≥ 10 V, VGS = 10 V
RDS(on)
Forward Transconductancea
4.0
± 100
µA
20
A
VGS = 10 V, ID = 3.0 A
0.129
0.155
VGS = 6.0 V, ID = 2.9 A
0.131
0.162
gfs
VDS = 15 V, ID = 3.0 A
14
VSD
IS = 2.8 A, VGS = 0 V
0.75
1.2
34
50
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
VDS = 100 V, VGS = 10 V, ID = 3.0 A
0.6
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
6.8
10.5
1.2
1.8
16
25
VDD = 100 V, RL = 25 Ω
ID ≅ 4.0 A, VGEN = 10 V, Rg = 6 Ω
23
35
47
70
19
30
IF = 2.8 A, dI/dt = 100 A/µs
100
150
Ω
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
40
VGS = 10 V thru 6 V
35
24
ID - Drain Current (A)
ID - Drain Current (A)
30
5V
18
12
25
20
15
TC = 125 °C
10
6
25 °C
5
- 55 °C
0
0
0
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2
2
4
6
8
10
0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
5
6
Document Number: 72562
S09-0322-Rev. D, 02-Mar-09
Si4434DY
Vishay Siliconix
25 °C, unless otherwise noted
0.30
2500
0.24
2000
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
TYPICAL CHARACTERISTICS
0.18
VGS = 6 V
VGS = 10 V
0.12
0.06
Ciss
1500
1000
Coss
500
Crss
0.00
0
0
8
16
24
32
40
0
150
200
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Capacitance
250
2.5
VGS = 10 V
ID = 3.0 A
VDS = 100 V
ID = 3.0 A
8
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
100
On-Resistance vs. Drain Current
10
6
4
2.0
1.5
1.0
2
0.5
- 50
0
0
7
14
21
28
35
0
25
50
75
100
125
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
150
0.25
RDS(on) - On-Resistance (Ω)
TJ = 150 °C
10
TJ = 25 °C
1
0.0
- 25
Qg - Total Gate Charge (nC)
50
IS - Source Current (A)
50
0.20
ID = 3.0 A
0.15
0.10
0.05
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
VDS - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72562
S09-0322-Rev. D, 02-Mar-09
10
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3
Si4434DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.0
60
50
0.5
40
0.0
Power (W)
V GS(th) Variance (V)
ID = 250 µA
- 0.5
30
20
- 1.0
10
- 1.5
- 50
- 25
0
25
50
75
100
125
0
0.01
150
TJ - Temperature (°C)
1
Time (s)
Threshold Voltage
Single Pulse Power
0.1
10
100
100
Limited by
RDS(on)*
ID - Drain Current (A)
10
1
1 ms
10 ms
0.1
100 ms
1s
TC = 25 °C
Single Pulse
0.01
0.001
0.1
1
10
10 s
DC
100
1000
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 65 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 72562
S09-0322-Rev. D, 02-Mar-09
Si4434DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72562.
Document Number: 72562
S09-0322-Rev. D, 02-Mar-09
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Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
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Revision: 02-Oct-12
1
Document Number: 91000