VISHAY SI4434DY-E3

Si4434DY
Vishay Siliconix
New Product
N-Channel 250-V (D-S) MOSFET
FEATURES
D PWM-OptimizedTrenchFETr Power MOSFET
D 100% Rg Tested
D Avalanche Tested
PRODUCT SUMMARY
VDS (V)
250
rDS(on) (W)
ID (A)
0.155 @ VGS = 10 V
3.0
0.162 @ VGS = 6.0 V
2.9
APPLICATIONS
D Primary Side Switch In:
− Telecom Power Supplies
− Distributed Power Architectures
− Miniature Power Modules
D
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
G
Top View
S
Ordering Information: Si4434DY—E3
Si4434DY-T1—E3 (with Tape and Reel)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
VDS
250
Gate-Source Voltage
VGS
"20
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
TA = 70_C
Pulsed Drain Current
ID
Continuous Source Current (Diode Conduction)a
IS
2.1
2.4
1.7
30
1.3
L = 0.1 mH
IAS
13
Single Pulse Avalanche Energy
L = 0.1 mH
EAS
8.4
TA = 25_C
TA = 70_C
Operating Junction and Storage Temperature Range
PD
A
2.6
Avalanche Current
Maximum Power Dissipationa
V
3.0
IDM
mJ
3.1
1.56
2.0
1.0
TJ, Tstg
Unit
−55 to 150
W
_C
THERMAL RESISTANCE RATINGS
Parameter
M i
Maximum
JJunction-to-Ambient
ti t A bi ta
Maximum Junction-to-Foot (Drain)
Symbol
t v 10 sec
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
33
40
65
80
17
21
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72562
S-32556—Rev. B, 15-Dec-03
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1
Si4434DY
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
VGS(th)
VDS = VGS, ID = 250 mA
2.0
IGSS
Typ
Max
Unit
4.0
V
VDS = 0 V, VGS = "20 V
"100
nA
VDS = 250 V, VGS = 0 V
1
VDS = 250 V, VGS = 0 V, TJ = 55_C
15
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain Source On
Drain-Source
On-State
State Resistancea
Diode Forward
Voltagea
20
VDS w 10 V, VGS = 10 V
A
VGS = 10 V, ID = 3.0 A
0.129
0.155
VGS = 6.0 V, ID = 2.9 A
0.131
0.162
gfs
VDS = 15 V, ID = 3.0 A
14
VSD
IS = 2.8 A, VGS = 0 V
0.75
1.2
34
50
VDS = 100 V, VGS = 10 V, ID = 3.0 A
6.8
rDS(on)
DS( )
Forward Transconductancea
mA
W
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
10.5
0.6
1.2
1.8
16
25
VDD = 100 V, RL = 25 W
ID ^ 4.0 A, VGEN = 10 V, Rg = 6 W
23
35
47
70
19
30
IF = 2.8 A, di/dt = 100 A/ms
100
150
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
W
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
30
40
VGS = 10 thru 6 V
35
30
I D − Drain Current (A)
I D − Drain Current (A)
24
5V
18
12
6
25
20
15
TC = 125_C
10
25_C
5
−55_C
0
0
0
2
4
6
8
VDS − Drain-to-Source Voltage (V)
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2
10
0
1
2
3
4
5
6
VGS − Gate-to-Source Voltage (V)
Document Number: 72562
S-32556—Rev. B, 15-Dec-03
Si4434DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Capacitance
2500
0.24
2000
C − Capacitance (pF)
r DS(on) − On-Resistance ( W )
On-Resistance vs. Drain Current
0.30
0.18
VGS = 6 V
VGS = 10 V
0.12
0.06
Ciss
1500
1000
Coss
500
Crss
0.00
0
0
8
16
24
32
40
0
50
ID − Drain Current (A)
Gate Charge
200
250
On-Resistance vs. Junction Temperature
2.5
VDS = 100 V
ID = 3.0 A
r DS(on) − On-Resistance ( W)
(Normalized)
V GS − Gate-to-Source Voltage (V)
150
VDS − Drain-to-Source Voltage (V)
10
8
6
4
2
0
0
7
14
21
28
VGS = 10 V
ID = 3.0 A
2.0
1.5
1.0
0.5
−50
35
−25
0
Qg − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
75
100
125
150
On-Resistance vs. Gate-to-Source Voltage
0.25
r DS(on) − On-Resistance ( W )
TJ = 150_C
10
TJ = 25_C
1
0.0
25
TJ − Junction Temperature (_C)
50
I S − Source Current (A)
100
0.20
ID = 3.0 A
0.15
0.10
0.05
0.00
0.2
0.4
0.6
0.8
1.0
VSD − Source-to-Drain Voltage (V)
Document Number: 72562
S-32556—Rev. B, 15-Dec-03
1.2
0
2
4
6
8
10
VGS − Gate-to-Source Voltage (V)
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Si4434DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
1.0
60
50
ID = 250 mA
40
Power (W)
V GS(th) Variance (V)
0.5
0.0
−0.5
30
20
−1.0
10
−1.5
−50
−25
0
25
50
75
100
125
0
0.01
150
1
0.1
100
Time (sec)
TJ − Temperature (_C)
Safe Operating Area, Junction-to-Case
100
I D − Drain Current (A)
10
Limited
by rDS(on)
10
1
1 ms
10 ms
0.1
100 ms
1s
TC = 25_C
Single Pulse
0.01
10 s
dc
0.001
0.1
1
10
100
1000
VDS − Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 65_C/W
0.02
3. TJM − TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10−4
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4
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
10
100
600
Document Number: 72562
S-32556—Rev. B, 15-Dec-03
Si4434DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
Document Number: 72562
S-32556—Rev. B, 15-Dec-03
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
10
100
1000
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