Datasheet

IMAGE SENSOR
NMOS linear image sensor
S3901-FX series
Image sensor highly sensitive to X-rays from 10 k to 100 keV
NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning
circuit is made up of N-channel MOS transistors, has low power consumption and is easy to handle. Each photodiode has a large active area,
high UV sensitivity yet very low noise, delivering a high S/N even at low light levels. Current output type NMOS linear image sensors also offer
excellent output linearity and wide dynamic range.
S3901-FX series image sensors are variants of S3901-F series NMOS image sensors. Having a phosphor-coated fiber optic plate (FOP) as the
light input window, the S3901-FX series was developed for detection of X-rays and electrons. The S3901-FX offers particularly high sensitivity to
X-rays from 10 k to 100 keV. The phosphor material used is gadolinium ox sulfide (Gd2O 2S · Tb) whose composition is carefully selected to
provide optimum sensitivity and resolution with a peak emission at 550 nm wavelength.
The S3901-FX series active area consists of a photodiode array with pixels formed at 50 µm pitches and a height of 2.5 mm. The number of pixels
can be selected from 256 or 512.
Hamamatsu S3904 series NMOS linear image sensors are also available with FOP windows coated with the same phosphor material as S3901FX series.
Using photodiodes with no phosphor and FOP window also allows direct detection of X-rays at energy levels below 10 keV.
Features
Applications
l Wide active area
Pixel pitch: 50 µm
Pixel height: 2.5 mm
l Low dark current and high saturation charge allow a
long integration time and a wide dynamic range at room
temperature
l Excellent output linearity and sensitivity spatial uniformity
l Low power consumption: 1 mW max.
l Start pulse and clock pulse are CMOS logic compatible
■ Equivalent circuit
1
Clock
2
Degital shift register
(MOS shift register)
End of scan
2.5 mm
st
■ Active area structure
Active video
Active
photodiode
45 µm
Vss
50 µm
Saturation
control gate
Saturation
control drain
Dummy video
Phosphor material
Fiber optic plate
Dummy diode
1.0 µm
Start
Clock
l Test equipment using X-ray and electron beam transmission
l X-ray non-destructive inspection
l X-ray and electron beam detector
Oxidation silicon
1.0 µm
N type silicon
400 µm
KMPDC0020EA
P type silicon
KMPDC0008EA
■ Absolute maximum ratings
Parameter
Input pulse (φ1, φ2, φst) voltage
Power consumption*1
Operating temperature*2
Storage temperature
Symbol
Vφ
P
Topr
Tstg
Value
15
1
-30 to +60
-40 to +80
Unit
V
mW
°C
°C
*1: Vφ=5.0 V
*2: No condensation
1
NMOS linear image sensor
S3901-FX series
■ Shape specifications
Parameter
Number of pixels
Package length
Number of pin
Window material*3
S3901-256FX
256
31.75
S3901-512FX
512
40.6
Unit
mm
22
Fiber optic plate
Weight
8.0
10.0
g
*3: To prevent unwanted effects from stray light, S3901-FX series is supplied with an aluminum cover fitted on the phosphorcoated FOP.
■ Specifications (Ta=25 °C)
Parameter
Pixel pitch
Pixel height
S pectral response range (20% of peak)
Photo sensitivity
Photodiode dark current*4
Photodiode capacitance*4
Saturation exposure*4
Saturation output charge*4
Photo response non-uniformity*5
Symbol
λ
S
ID
Cph
Esat
Qsat
PRNU
Min.
-
Typ.
50
2.5
10 to 100
0.013
0.2
20
4
50
-
-
Max.
0.6
±10
Unit
µm
mm
keV
pC/mR
pA
pF
R
pC
%
*4: Vb=2.0 V, Vφ=5.0 V
*5: Measured under the following conditions including uniformity in the phosphor emission (but excluding dark current
components).
X-ray tube voltage: 40 kV, tube current: 3 mA
Distance between S3901-FX series and X-ray tube: 4 cm
Phosphor material: Gd2O2S . Tb (thickness=200 µm, λp=550 nm, decay time=1 ms)
■ Electrical characteristics (Ta=25 °C)
Parameter
Symbol
High Vφ1, Vφ2 (H)
C lock p ulse (φ1 , φ2 ) volta g e
Low Vφ1, Vφ2 (L)
High
Vφs (H)
Start pulse (φst) voltage
Low
Vφs (L)
Video bias voltage*6
Vb
Saturation control gate voltage
Vscg
Saturation control drain voltage
Vscd
trφ1,
trφ2
7
C lock pulse (φ1, φ2) rise / fall tim e*
tfφ1, tfφ2
Clock pulse (φ1, φ2) pulse width
tpwφ1, tpwφ2
Start pulse (φst) rise / fall time
trφs, tfφs
Start pulse (φst) pulse width
tpwφs
Start pulse (φst) and clock pulse
tφov
(φ2) overlap
7
Clock pulse space*
X1, X 2
Data rate*8
f
Condition
Video delay time
tvd
50% of
8 9
saturation* *
Clock pulse (φ1, φ2)
line capacitance
Cφ
5 V bias
Cscg
5 V bias
CV
2 V bias
Saturation control gate (Vscg)
line capacitance
Video line capacitance
Min.
4.5
0
4.5
0
1.5
-
Typ.
5
Vφ1
Vφ - 3.0
0
Vb
Max.
10
0.4
10
0.4
Vφ - 2.5
-
Unit
V
V
V
V
V
V
V
-
20
-
ns
200
200
20
-
-
ns
ns
ns
200
-
-
ns
trf - 20
0.1
-
2000
ns
kHz
-
120 (-256 FX)
-
ns
-
160 (-512 FX)
-
ns
-
36
67
20
35
11
20
-
pF
pF
pF
pF
pF
pF
(-256
(-512
(-256
(-512
(-256
(-512
FX)
FX)
FX)
FX)
FX)
FX)
*6 : V φ is in p u t p u lse v olta g e
*7 : trf is th e clo ck p u lse rise o r fall tim e . A clo ck p u lse sp a ce o f “rise tim e /fall tim e - 2 0 ” n s (n a n o se co n d s) o r m o re sh o u ld b e in p u t
if th e clo c k p u ls e ris e o r fa ll tim e is lo n g e r th a n 2 0 n s.
*8 : V b = 2 .0 V, V φ= 5 .0 V
*9 : M e a su re d w ith C 7 88 3 d riv e r circu it.
2
NMOS linear image sensor
S3901-FX series
■ Dimensional outlines (unit: mm)
Active area
25.6 × 2.5
12.8 ± 0.3
31.75
Chip
surface
5.0 ± 0.2
5.0 ± 0.2
10.4
6.4 ± 0.3
10.4
5.4 ± 0.2
Active area
12.8 × 2.5
5.4 ± 0.2
S3901-512FX
S3901-256FX
40.6
10.0
3.0 3.4
3.0 3.4
10.0
Chip
surface
0.51
0.51
0.25
0.25
2.54
2.54
25.4
25.4
10.16
10.16
KMPDA0031EB
KMPDA0032EB
■ Pin connection
2
1
22
NC
1
2
21
NC
st
3
20
NC
Vss
4
19
NC
Vscg
5
18
NC
NC
6
17
NC
Vscd
7
16
NC
Vss
8
15
NC
Active video
9
14
NC
Dummy video
10
13
NC
Vsub
11
12
End of scan
Vss, Vsub and NC should be grounded.
KMPDC0056EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.
Type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(X)" which means tentative specifications or a suffix "(Z)"
which means developmental specifications. ©2010 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KMPD1005E06
Jul. 2010 DN
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