IMAGE SENSOR NMOS linear image sensor S3901/S3904-F series NMOS linear image sensors with fiber optic windows NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning circuit is made up of N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a large active area, high sensitivity yet very low noise, delivering a high S/N even at low light levels. S3901/S3904-F series are current-output type NMOS linear image sensors with fiber optic windows and feature superior output linearity and wide dynamic range. The fiber optic windows allow efficient optical coupling to an image device such as image intensifiers suitable for low-light-level detection. The photodiodes of S3901-F series have a height of 2.5 mm and are arrayed in a row at a spacing of 50 µm. The photodiodes of S3904-F series also have a height of 2.5 mm but are arrayed at a spacing of 25 µm. The photodiodes are available in 2 different pixel quantities for each series: 256 (S3901-256F), 512 (S3901-512F, S3904-512F), 1024 (S3904-1024F). Features Applications l Wide active area Pixel pitch: 50 µm (S3901-F series) 25 µm (S3904-F series) Pixel height: 2.5 mm l Low dark current and high saturation charge allow a long integration time and a wide dynamic range at room temperature l Excellent output linearity and sensitivity spatial uniformity l Lower power consumption: 1 mW max. l Start pulse and clock pulses are CMOS logic compatible ■ Equivalent circuit st 1 Clock 2 ■ Active area structure Digital shift register (MOS shift register) End of scan 2.5 mm Start Clock l Multichannel spectrophotometry l Image readout system Active video Active photodiode b Vss a Dummy video Dummy diode Fiber optic plate 1.0 µm Saturation control gate Saturation control drain 1.0 µm N type silicon KMPDC0020EA 400 µm Oxidation silicon P type silicon S3901-F series: a=50 µm, b=45 µm S3904-F series: a=25 µm, b=20 µm KMPDA0131EA ■ Absolute maximum ratings Parameter Input pulse (φ1, φ2, φst) voltage Power consumption*1 Operating temperature*2 Storage temperature Symbol Vφ P Topr Tstg Value 15 1 -40 to +65 -40 to +85 Unit V mW °C °C *1: Vφ=5.0 V *2: No condensation 1 S3901/S3904-F series NMOS linear image sensor ■ Shape specifications Parameter Number of pixels Package length Number of pins Window material Weight S3901-256F 256 31.75 S3901-512F 512 40.6 S3904-512F 512 31.75 22 Fiber optic plate 8.0 S3904-1024F 1024 40.6 22 Fiber optic plate 10.0 8.0 10.0 Unit mm g ■ Specifications (Ta=25 °C) Parameter Symbol Min. - S3901-F series Typ. Max. 50 2.5 - Pixel pitch Pixel height Spectral response range 360 to 1000 λ (10% of peak) Peak sensitivity wavelength 600 λp Photodiode dark current*3 ID 0.2 Photodiode capacitance*3 Cph 20 Saturation exposure*3 *4 Esat 200 Saturation output charge*3 Qsat 50 Photo response non-uniformity*5 PRNU *3: Vb=2.0 V, Vφ=5.0 V *4: 2856 K, tungsten lamp *5: 50% of saturation, excluding the start pixel and last pixel Min. - S3904-F series Typ. Max. 25 2.5 360 to 1000 0.6 ±5 - 600 0.1 10 200 25 - Unit µm mm nm 0.3 ±5 nm pA pF Mllx· s pC % ■ Electrical characteristics (Ta=25 °C) Parameter Symbol C ondition Clock pulse (φ1, φ2) voltage High Vφ1, Vφ2 (H) Low Vφ1, Vφ2 (L) High Vφs (H) Start pulse (φst) voltage Low Vφs (L) Video bias voltage*6 Vb Saturation control gate voltage Vscg Saturation control drain voltage Vscd trφ1, trφ2 7 C lock pulse (φ1, φ2) rise / fall tim e* tfφ1, tfφ2 Clock pulse (φ1, φ2) pulse width tpwφ1, tpwφ2 Start pulse (φst) rise / fall time trφs, tfφs Start pulse (φst) pulse width tpwφs Start pulse (φst) and clock pulse tφov (φ2) overlap Clock pulse space*7 X1, X2 Data rate*8 f Video delay time tvd 50 % of saturation *8 *9 Clock pulse (φ1, φ2) line capacitance Cφ 5 V bias Cscg 5 V bias CV 2 V bias Saturation control gate (Vscg) line capacitance Video line capacitance S3901-F series Min. Typ. Max. 4.5 5 10 0 0.4 4.5 10 Vφ1 0 0.4 1.5 Vφ - 3.0 Vφ - 2.5 0 Vb - S3904-F series Min. Typ. Max. 4.5 5 10 0 0.4 4.5 10 Vφ1 0 0.4 1.5 Vφ - 3.0 Vφ - 2.5 0 Vb - Unit V V V V V V V - 20 - - 20 - ns 200 200 20 - - 200 200 20 - - ns ns ns 200 - - 200 - - ns 2000 - ns kHz ns trf - 20 0.1 120 (-256 F) - 2000 - trf - 20 0.1 150 (-512 F) - - 160 (-512 F) - - 200 (-1024 F) - ns - 36 (-256 F) 67 (-512 F) 20 (-256 F) 35 (-512 F) 11 (-256 F) 20 (-512 F) - - 50 (-512 F) 100 (-1024 F) 24 (-512 F) 45 (-1024 F) 16 (-512 F) 30 (-1024 F) - pF pF pF pF pF pF *6 : V φ is in p u t p u lse v olta g e . *7 : trf is th e clo ck p u lse rise o r fall tim e . A clo ck p u lse sp a c e of “rise tim e /fa ll tim e - 2 0 ” n s (n a n o se c o n d s) o r m o re sh o uld b e in p u t if th e clo ck p ulse rise o r fa ll tim e is lo n g e r th a n 2 0 n s. *8 : V b = 2 .0 V, V φ= 5 .0 V *9 : M e a su re d w ith C 7 8 8 3 d riv e r circu it. 2 NMOS linear image sensor S3901/S3904-F series ■ Spectral response (typical example) (Ta=25 ˚C) Photo sensitivity (A/W) 0.3 0.2 0.1 0 200 400 600 800 1000 1200 Wavelength (nm) KMPDB0173EA ■ Output charge vs. exposure 102 (Typ. Vb=2 V, V =5 V, light source: 2856 K) Saturation charge Output charge (pC) 101 S3901-F series 100 10–1 S3904-F series Saturation charge 10–2 10–3 10–5 10–4 10–3 10–2 10–1 100 Exposure (lx · s) KMPDB0099EB 3 NMOS linear image sensor S3901/S3904-F series ■ Dimensional outlines (unit: mm) S3901-256F, S3904-512F 12.8 ± 0.3 5.0 ± 0.2 5.0 ± 0.2 10.4 10.4 6.4 ± 0.3 5.4 ± 0.2 Active area 25.6 × 2.5 5.4 ± 0.2 Active area 12.8 × 2.5 S3901-512F, S3904-1024F Chip surface Chip surface 10.0 40.6 10.0 31.2 9.8 40.0 9.8 3.0 3.0 3.0 3.0 31.75 0.51 0.25 0.51 2.54 0.25 2.54 25.4 10.16 25.4 10.16 KMPDA0094EB KMPDA0093EB ■ Pin connection 2 1 22 NC 1 2 21 NC st 3 20 NC Vss 4 19 NC Vscg 5 18 NC NC 6 17 NC Vscd 7 16 NC Vss 8 15 NC Active video 9 14 NC Dummy video 10 13 NC Vsub 11 12 End of scan Vss, Vsub and NC should be grounded. KMPDC0056EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. Type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(X)" which means tentative specifications or a suffix "(Z)" which means developmental specifications. ©2010 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 4 Cat. No. KMPD1003E04 Jul. 2010 DN