IRF9Z22, SiHF9Z22 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • • - 50 RDS(on) (Ω) VGS = - 10 V 0.33 Qg (Max.) (nC) 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single Available RoHS* COMPLIANT DESCRIPTION S The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The P-Channel Power MOSFET’s are designed for application which require the convenience of reverse polarity operation. They retain all of the features of the more common N-Channel Power MOSFET’s such as voltage control, very fast switching, ease of paralleling, and excellent temperature stability. P-Channel Power MOSFETs are intended for use in power stages where complementary symmetry with N-Channel devices offers circuit simplification. They are also very useful in drive stages because of the circuit versatility offered by the reverse polarity connection. Applications include motor control, audio amplifiers, switched mode converters, control circuits and pulse amplifiers. TO-220 G S G P-Channel Versatility Compact Plastic Package Fast Switching Low Drive Current Ease of Paralleling Excellent Temperature Stability D D P-Channel MOSFET ORDERING INFORMATION Package TO-220 IRF9Z22PbF SiHF9Z22-E3 IRF9Z22 SiHF9Z22 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Drain-Gate Voltage (RGS = 20 KΩ) SYMBOL VDS VGS VGDR Continuous Drain Current VGS at - 10 V Pulsed Drain Currenta Linear Derating Factor Inductive Current, Clamped Unclamped Inductive Current (Avalanche Current) Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) TC = 25 °C TC = 100 °C ID IDM L = 100 µH TC = 25 °C ILM IL PD TJ, Tstg for 10 s LIMIT - 50 ± 20 - 50 - 8.9 - 5.6 - 36 0.32 - 36 - 2.2 40 - 55 to + 150 300c UNIT V A W/°C A A W °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14). b. VDD = - 25 V, starting TJ = 25 °C, L =100 µH, RG = 25 Ω c. 0.063" (1.6 mm) from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91350 S09-0074-Rev. A, 02-Feb-09 For technical questions, contact: [email protected] www.vishay.com 1 IRF9Z22, SiHF9Z22 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 80 Case-to-Sink, Flat, Greased Surface RthCS 1.0 - Maximum Junction-to-Case (Drain) RthJC - 3.1 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage VDS VGS = 0 V, ID = - 250 µA - 50 - - V VGS(th) VDS = VGS, ID = - 250 µA - 2.0 - - 4.0 V nA VGS = ± 20 V - - ± 500 VDS = max. rating, VGS = 0 V - - - 250 VDS = max. rating x 0,8, VGS = 0 V, TJ =125°C - - - 1000 - 0.28 0.33 Ω 2.3 3.5 - S IGSS Zero Gate Voltage Drain Current IDSS Drain-Source On-State Resistance RDS(on) Forward Transconductance gfs ID = - 5.6 Ab VGS = - 10 V VDS = 2 x VGS, IDS = - 5.6 Ab µA Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 9 VGS = - 10 V ID = - 9.7 A, VDS = - 0.8 max. rating. see fig. 17 - 480 - - 320 - - 58 - - 17 26 - 4.1 6.2 pF nC Gate-Drain Charge Qgd - 5.7 8.6 Turn-On Delay Time td(on) - 8.2 12 - 57 86 - 12 18 - 25 38 - 4.5 - - 7.5 - - - - 9.7 - - - 39 - - - 6.3 V 56 110 280 ns 0.17 0.34 0.85 µC Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Internal Drain Inductance LD Internal Source Inductance LS VDD = - 25 V, ID = - 9.7 A, RG = 18 Ω, RD = 2.4 Ω, see fig. 16 (MOSFET switching times are essentially independent of operating temperature) Between lead, 6 mm (0.25") from package and center of die contact D ns nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = - 9.7 A, VGS = 0 Vb TJ = 25 °C, IF = - 9.7 A, dI/dt = 100 A/µsb Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 91350 S09-0074-Rev. A, 02-Feb-09 IRF9Z22, SiHF9Z22 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Transfer Characteristics Document Number: 91350 S09-0074-Rev. A, 02-Feb-09 Fig. 3 - Typical Saturation Characteristics Fig. 4 - Maximum Safe Operating Area For technical questions, contact: [email protected] www.vishay.com 3 IRF9Z22, SiHF9Z22 Vishay Siliconix Fig. 5 - Typical Transconductance vs. Drain Current Fig. 6 - Typical Source-Drain Diode Forward Voltage www.vishay.com 4 Fig. 7 - Breakdown Voltage vs. Temperature Fig. 8 - Normalized On-Resistance vs. Temperature For technical questions, contact: [email protected] Document Number: 91350 S09-0074-Rev. A, 02-Feb-09 IRF9Z22, SiHF9Z22 Vishay Siliconix Fig. 9 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 11 - Typical On-Resistance vs. Drain Current Fig. 10 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 12 - Maximum Drain Current vs. Case Temperature Document Number: 91350 S09-0074-Rev. A, 02-Feb-09 For technical questions, contact: [email protected] www.vishay.com 5 IRF9Z22, SiHF9Z22 Vishay Siliconix Fig. 13a - Clamped Inductive Test Circuit Fig. 13b - Clamped Inductive Waveforms Fig. 14 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration Fig. 15 - Switching Time Test Circuit www.vishay.com 6 Fig. 16 - Gate Charge Test Circuit For technical questions, contact: [email protected] Document Number: 91350 S09-0074-Rev. A, 02-Feb-09 IRF9Z22, SiHF9Z22 Vishay Siliconix Fig. 17 - Typical Time to Accumulated 1 % Gate Failure Fig. 18 - Typical High Temperature Reverse Bias (HTRB) Failure Rate Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91350. Document Number: 91350 S09-0074-Rev. A, 02-Feb-09 For technical questions, contact: [email protected] www.vishay.com 7 Package Information www.vishay.com Vishay Siliconix TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 D2 12.19 12.70 0.480 0.500 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 0.115 J(1) 2.41 2.92 0.095 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 ØP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: T14-0413-Rev. P, 16-Jun-14 DWG: 5471 Note * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM C b e J(1) e(1) D2 Document Number: 71195 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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