DATASHEET

HCTS541MS
Radiation Hardened Non-Inverting
Octal Buffer/Line Driver, Three-State
August 1995
Features
Pinouts
• 3 Micron Radiation Hardened CMOS SOS
20 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T20
TOP VIEW
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm2/mg
• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/
Bit-Day (Typ)
• Dose Rate Survivability: >1 x 1012 RAD (Si)/s
OE1
1
A0
2
19 OE2
A1
3
18 Y0
20 VCC
A2
4
17 Y1
• Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse
A3
5
16 Y2
• Latch-Up Free Under Any Conditions
A4
6
15 Y3
A5
7
14 Y4
A6
8
13 Y5
A7
9
12 Y6
GND 10
11 Y7
• Fanout (Over Temperature Range)
- Bus Driver Outputs - 15 LSTTL Loads
• Military Temperature Range: -55oC to +125oC
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
20 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F20
TOP VIEW
• Input Current Levels Ii ≤ 5µA at VOL, VOH
OE1
1
20
VCC
A0
2
19
OE2
The Intersil HCTS541MS is a Radiation Hardened noninverting octal buffer/line driver, three-state outputs. The
output enable pins (OEN1 and OEN2) control the three-state
outputs. If either enable is high the outputs will be in the high
impedance state. For data output both enables (OEN1 and
OEN2) must be low.
A1
3
18
Y0
A2
4
17
Y1
A3
5
16
Y2
A4
6
15
Y3
A5
7
14
Y4
A6
8
13
Y5
The HCTS541MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
A7
9
12
Y6
10
11
Y7
Description
GND
The HCTS54 is supplied in a 20 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
Ordering Information
PART NUMBER
TEMPERATURE RANGE
SCREENING LEVEL
PACKAGE
HCTS541DMSR
-55oC to +125oC
Intersil Class S Equivalent
20 Lead SBDIP
HCTS541KMSR
-55oC to +125oC
Intersil Class S Equivalent
20 Lead Ceramic Flatpack
HCTS541D/Sample
+25oC
Sample
20 Lead SBDIP
HCTS541K/Sample
+25oC
Sample
20 Lead Ceramic Flatpack
HCTS541HMSR
+25oC
Die
Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
682
Spec Number
File Number
518630
3073.1
HCTS541MS
Functional Block Diagram
VDD
P
P
TTL
P
2
N
N
P
18
N
N
OE
TTL
17
3
VDD
TTL
TTL
16
4
P
=
P
N
TTL
15
5
TTL
14
6
TTL
13
7
TTL
12
8
TTL
1
OE
19
TTL
TRUTH TABLE
INPUTS
OE1
OE2
An
OUTPUTS
L
L
H
H
H
X
X
Z
X
H
X
Z
L
L
L
L
H = High Voltage Level, L = Low Voltage Level, X = Immaterial, Z = High Impedance
Spec Number
683
518630
Specifications HCTS541MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . . -0.5 to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
θJA
θJC
SBDIP Package. . . . . . . . . . . . . . . . . . . .
72oC/W
24oC/W
Ceramic Flatpack Package . . . . . . . . . . . 107oC/W 28oC/W
Maximum Package Power Dissipation at +125oC Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.69W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.47W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.9mW/oC
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 9.3mW/oC
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . . .500ns Max
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Quiescent Current
Output Current
(Sink)
Output Current
(Source)
Output Voltage Low
Output Voltage High
Input Leakage
Current
Three-State Output
Leakage Current
Noise Immunity
Functional Test
GROUP
A SUBGROUPS
TEMPERATURE
MIN
MAX
UNITS
1
+25oC
-
40
µA
2, 3
+125oC, -55oC
-
750
µA
1
+25oC
7.2
-
mA
2, 3
+125oC, -55oC
6.0
-
mA
1
+25oC
-7.2
-
mA
2, 3
+125oC, -55oC
-6.0
-
mA
VCC = 4.5V, VIH = 2.25V,
IOL = 50µA, VIL = 0.8V
1, 2, 3
+25oC, +125oC, -55oC
-
0.1
V
VCC = 5.5V, VIH = 2.75V,
IOL = 50µA, VIL = 0.8V
1, 2, 3
+25oC, +125oC, -55oC
-
0.1
V
VCC = 4.5V, VIH = 2.25V,
IOH = -50µA, VIL = 0.8V
1, 2, 3
+25oC, +125oC, -55oC
VCC
-0.1
-
V
VCC = 5.5V, VIH = 2.75V,
IOH = -50µA, VIL = 0.8V
1, 2, 3
+25oC, +125oC, -55oC
VCC
-0.1
-
V
VCC = 5.5V, VIN = VCC or
GND
1
+25oC
-
±0.5
µA
2, 3
+125oC, -55oC
-
±5.0
µA
1
+25oC
-
±1
µA
2, 3
+125oC, -55oC
-
±50
µA
7, 8A, 8B
+25oC, +125oC, -55oC
-
-
-
(NOTE 1)
CONDITIONS
SYMBOL
ICC
IOL
IOH
VOL
VOH
IIN
IOZ
FN
VCC = 5.5V,
VIN = VCC or GND
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC - 0.4V,
VIL = 0V
Applied Voltage = 0V or
VCC, VCC = 5.5V
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V (Note 2)
LIMITS
NOTES:
1. All voltages referenced to device GND.
2. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.
Spec Number
684
518630
Specifications HCTS541MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Data to Output
Enable to Output
TEMPERATURE
MIN
MAX
UNITS
VCC = 4.5V
9
+25oC
2
20
ns
VCC = 4.5V
10, 11
+125oC, -55oC
2
22
ns
VCC = 4.5V
9
+25oC
2
23
ns
10, 11
+125oC, -55oC
2
26
ns
9
+25oC
2
20
ns
10, 11
+125oC, -55oC
2
21
ns
9
+25oC
2
22
ns
10, 11
+125oC, -55oC
2
23
ns
9
+25oC
2
21
ns
10, 11
+125oC, -55oC
2
22
ns
SYMBOL
TPHL,
TPLH
TPZL
TPZH
Disable to Output
GROUP
A SUBGROUPS
(NOTES 1, 2)
CONDITIONS
TPLZ
TPHZ
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
LIMITS
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
SYMBOL
Capacitance Power
Dissipation
CPD
Input Capacitance
Output Transition
Time
CIN
TTHL,
TTLH
CONDITIONS
NOTES
TEMPERATURE
MIN
MAX
UNITS
1
+25oC
-
38
pF
1
+125oC, -55oC
-
60
pF
1
+25oC
-
10
pF
1
+125oC
-
10
pF
1
+25oC
-
12
ns
1
+125oC, -55oC
-
18
ns
VCC = 5.0V, f = 1MHz
VCC = 5.0V, f = 1MHz
VCC = 4.5V
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
Spec Number
685
518630
Specifications HCTS541MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
200K RAD
LIMITS
PARAMETER
(NOTES 1, 2)
CONDITIONS
SYMBOL
TEMPERATURE
MIN
MAX
UNITS
Quiescent Current
ICC
VCC = 5.5V, VIN = VCC or GND
+25oC
-
0.75
mA
Output Current (Sink)
IOL
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
+25oC
6.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
+25oC
-6.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V or 5.5V, VIH = VCC/2,
VIL = 0.8V, IOL = 50µA
+25oC
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V or 5.5V, VIH = VCC/2,
VIL = 0.8V, IOH = -50µA
+25oC
VCC
-0.1
-
V
Input Leakage Current
IIN
VCC = 5.5V, VIN = VCC or GND
+25oC
-
±5
µA
Three-State Output
Leakage Current
IOZ
Applied Voltage = 0V or VCC, VCC = 5.5V
+25oC
-
±50
µA
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V, (Note 3)
+25oC
-
-
-
Data to Output
TPHL,
TPLH
VCC = 4.5V
+25oC
2
22
ns
Enable to Output
TPZL
VCC = 4.5V
+25oC
2
26
ns
TPZH
VCC = 4.5V
+25oC
2
21
ns
TPLZ
VCC = 4.5V
+25oC
2
23
ns
TPHZ
VCC = 4.5V
+25oC
2
22
ns
Disable to Output
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
3. For functional tests VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25oC)
GROUP B
SUBGROUP
DELTA LIMIT
ICC
5
12µA
IOL/IOH
5
-15% of 0 Hour
IOZL/IOZH
5
±200nA
PARAMETER
Spec Number
686
518630
Specifications HCTS541MS
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUPS
METHOD
GROUP A SUBGROUPS
Initial Test (Preburn-In)
100%/5004
1, 7, 9
ICC, IOL/H, IOZL/H
Interim Test I (Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H, IOZL/H
Interim Test II (Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H, IOZL/H
PDA
100%/5004
1, 7, 9, Deltas
Interim Test III (Postburn-In)
100%/5004
1, 7, 9
PDA
100%/5004
1, 7, 9, Deltas
Final Test
100%/5004
2, 3, 8A, 8B, 10, 11
Sample/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Subgroup B-5
Sample/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroup B-6
Sample/5005
1, 7, 9
Sample/5005
1, 7, 9
Group A (Note 1)
Group B
Group D
READ AND RECORD
Subgroups 1, 2, 3, 9, 10, 11
NOTE: 1. Alternated Group A Inspection in accordance with Method 5005 of MIL-STD-883 may be exercised.
TABLE 7. TOTAL DOSE IRRADIATION
TEST
CONFORMANCE
GROUPS
Group E Subgroup 2
READ AND RECORD
METHOD
PRE RAD
POST RAD
PRE RAD
POST RAD
5005
1, 7, 9
Table 4
1, 9
Table 4 (Note 1)
NOTE: 1. Except FN test which will be performed 100% Go/No-Go.
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS
OSCILLATOR
OPEN
GROUND
1/2 VCC = 3V ± 0.5V
VCC = 6V ± 0.5V
50kHz
25kHz
-
20
-
-
-
1 - 9, 19, 20
-
-
11 - 18
20
1, 19
2-9
STATIC BURN-IN I TEST CONNECTIONS (Note 1)
11 - 18
1 - 10, 19
STATIC BURN-IN II TEST CONNECTIONS (Note 1)
11 - 18
10
DYNAMIC BURN-IN TEST CONNECTIONS (Note 2)
-
10
NOTES:
1. Each pin except VCC and GND will have a resistor of 10kΩ ± 5% for static burn-in
2. Each pin except VCC and GND will have a resistor of 680Ω ± 5% for dynamic burn-in
TABLE 9. IRRADIATION TEST CONNECTIONS
OPEN
GROUND
VCC = 5V ± 0.5V
11 - 18
10
1 - 9, 19, 20
NOTE: Each pin except VCC and GND will have a resistor of 47KΩ ± 5% for irradiation testing.
Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures.
Spec Number
687
518630
HCTS541MS
Intersil Space Level Product Flow - ‘MS’
Wafer Lot Acceptance (All Lots) Method 5007
(Includes SEM)
100% Interim Electrical Test 1 (T1)
GAMMA Radiation Verification (Each Wafer) Method 1019,
4 Samples/Wafer, 0 Rejects
100% Static Burn-In 2, Condition A or B, 24 hrs. min.,
+125oC min., Method 1015
100% Nondestructive Bond Pull, Method 2023
100% Interim Electrical Test 2 (T2)
Sample - Wire Bond Pull Monitor, Method 2011
100% Delta Calculation (T0-T2)
Sample - Die Shear Monitor, Method 2019 or 2027
100% PDA 1, Method 5004 (Notes 1and 2)
100% Internal Visual Inspection, Method 2010, Condition A
100% Dynamic Burn-In, Condition D, 240 hrs., +125oC or
Equivalent, Method 1015
100% Delta Calculation (T0-T1)
100% Temperature Cycle, Method 1010, Condition C,
10 Cycles
100% Interim Electrical Test 3 (T3)
100% Constant Acceleration, Method 2001, Condition per
Method 5004
100% Delta Calculation (T0-T3)
100% PDA 2, Method 5004 (Note 2)
100% PIND, Method 2020, Condition A
100% Final Electrical Test
100% External Visual
100% Fine/Gross Leak, Method 1014
100% Serialization
100% Radiographic, Method 2012 (Note 3)
100% Initial Electrical Test (T0)
100% Static Burn-In 1, Condition A or B, 24 hrs. min.,
+125oC min., Method 1015
100% External Visual, Method 2009
Sample - Group A, Method 5005 (Note 4)
100% Data Package Generation (Note 5)
NOTES:
1. Failures from Interim electrical test 1 and 2 are combined for determining PDA 1.
2. Failures from subgroup 1, 7, 9 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the
failures from subgroup 7.
3. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004.
4. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005.
5. Data Package Contents:
• Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number,
Quantity).
• Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage.
• GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test
equipment, etc. Radiation Read and Record data on file at Intersil.
• X-Ray report and film. Includes penetrometer measurements.
• Screening, Electrical, and Group A attributes (Screening attributes begin after package seal).
• Lot Serial Number Sheet (Good units serial number and lot number).
• Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test.
• The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed
by an authorized Quality Representative.
Spec Number
688
518630
HCTS541MS
AC Timing Diagrams
AC Load Circuit
DUT
TEST
POINT
VIH
INPUT
VS
CL
VIL
RL
TPLH
TPHL
VOH
CL = 50pF
VS
OUTPUT
RL = 500Ω
VOL
TTLH
VOH
TTHL
80%
20%
VOL
80%
20%
OUTPUT
AC VOLTAGE LEVELS
PARAMETER
HCTS
UNITS
VCC
4.50
V
VIH
3.00
V
VS
1.30
V
VIL
0
V
VSS
0
V
Three-State Low Load Circuit
Three-State Low Timing Diagrams
VIH
VS
INPUT
RL
VIL
TPZL
TPLZ
VT
TEST
POINT
DUT
VOZ
VW
OUTPUT
CL
VOL
CL = 50pF
RL = 500Ω
THREE-STATE LOW VOLTAGE LEVELS
PARAMETER
HCTS
UNITS
VCC
4.50
V
VIH
3.00
V
VS
1.30
V
VT
1.30
V
VW
0.90
V
0
V
GND
Spec Number
689
518630
HCTS541MS
Three-State High Timing Diagrams
Three-State High Load Circuit
VIH
TEST
POINT
DUT
VS
INPUT
VIL
TPZH
RL
TPHZ
RL = 500Ω
VOH
VT
CL = 50pF
VW
OUTPUT
VOZ
CL
THREE-STATE HIGH VOLTAGE LEVELS
PARAMETER
HCTS
UNITS
VCC
4.50
V
VIH
3.00
V
VS
1.30
V
VT
1.30
V
VW
3.60
V
0
V
GND
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (321) 724-7000
FAX: (321) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
Taiwan Limited
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
Spec Number
690
518630
HCTS541MS
Die Characteristics
DIE DIMENSIONS:
101 x 85 mils
METALLIZATION:
Type: SiAl
Metal Thickness: 11kÅ ± 1kÅ
GLASSIVATION:
Type: SiO2
Thickness: 13kÅ ± 2.6kÅ
WORST CASE CURRENT DENSITY:
<2.0 x 105A/cm2
BOND PAD SIZE:
100µm x 100µm
4 mils x 4 mils
Metallization Mask Layout
(19) OE2
(20) VCC
(2) A0
(1) OE1
HCTS541MS
(18) Y0
A1 (3)
(17) Y1
A2 (4)
(16) Y2
A3 (5)
(15) Y3
A4 (6)
A5 (7)
(14) Y4
A6 (8)
Y6 (12)
Y7 (11)
GND (10)
A7 (9)
(13) Y5
NOTE: The die diagram is a generic plot from a similar HCS device. It is intended to indicate approximate die size and bond pad location.
The mask series for the HCTS541 is TA14456A.
Spec Number
691
518630
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