REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED 10-04-20 C. SAFFLE Add descriptive designator CDIP2-T8 for case outline letter “P”. A Under paragraph 1.3, footnote 3/, delete JA and substitute JC. - ro B Under paragraph 1.3; make change to the ESD HBM limit from 250 V to 2,000 V and add new footnote; delete entirely “RTCT pin” and “Other pins” limits. - ro 11-03-01 C. SAFFLE C Add device types 05, 06, 07, and 08. Add paragraph 6.7. - ro 12-09-20 C. SAFFLE D Add device class T to device type 04. - ro 13-08-13 C. SAFFLE E Make changes to correct and clarify SEL limits under paragraph 1.5 and Table IB. - ro 14-10-29 C. SAFFLE F Make SEL and SEB changes to paragraphs 1.5, 4.4.4.3, and Table IB by adding 0 and 60 angle of incidence. - ro 15-06-12 C. SAFFLE REV SHEET REV F F F F F F F F F SHEET 15 16 17 18 19 20 21 22 23 REV STATUS REV F F F F F F F F F F F F F F OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http://www.landandmaritime.dla.mil CHECKED BY RAJESH PITHADIA APPROVED BY CHARLES F. SAFFLE DRAWING APPROVAL DATE 10-01-28 REVISION LEVEL F MICROCIRCUIT, LINEAR, PULSE WIDTH MODULATOR CONTROLLER, MONOLITHIC SILICON SIZE CAGE CODE A 67268 SHEET DSCC FORM 2233 APR 97 5962-07249 1 OF 23 5962-E369-15 1. SCOPE 1.1 Scope. This drawing documents three product assurance class levels consisting of high reliability (device class Q), space application (device class V) and for appropriate satellite and similar applications (device class T). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. For device class T, the user is encouraged to review the manufacturer’s Quality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended application. 1.2 PIN. The PIN is as shown in the following example: 5962 R Federal stock class designator \ 07249 RHA designator (see 1.2.1) 01 V X C Device type (see 1.2.2) Device class designator (see 1.2.3) Case outline (see 1.2.4) Lead finish (see 1.2.5) / \/ Drawing number 1.2.1 RHA designator. Device classes Q, T and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic Rising under voltage lockout Maximum duty cycle 01 02 03 04 05 06 07 08 ISL78840ASRH ISL78841ASRH ISL78843ASRH ISL78845ASRH ISL78840ASEH ISL78841ASEH ISL78843ASEH ISL78845ASEH 7.0 V 7.0 V 8.4 V 8.4 V 7.0 V 7.0 V 8.4 V 8.4 V 100 % 50 % 100 % 50 % 100 % 50 % 100 % 50 % Circuit function Pulse width modulator controller Pulse width modulator controller Pulse width modulator controller Pulse width modulator controller Pulse width modulator controller Pulse width modulator controller Pulse width modulator controller Pulse width modulator controller 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Q, V T Device requirements documentation Certification and qualification to MIL-PRF-38535 Certification and qualification to MIL-PRF-38535 with performance as specified in the device manufacturers approved quality management plan. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-07249 A REVISION LEVEL F SHEET 2 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter P X Descriptive designator Terminals Package style CDIP2-T8 See figure 1 8 8 Dual in line Dual flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q, T and V. 1.3 Absolute maximum ratings. 1/ 2/ Supply voltage range (VDD) ...................................................................................... GND - 0.3 V to +14.7 V Output voltage ........................................................................................................... Signal pins ................................................................................................................. Electrostatic discharge (ESD) classification: Human body model (HBM) .................................................................................... Maximum junction temperature (TJ) .......................................................................... Maximum storage temperature range (TSTG) ........................................................... Maximum lead temperature (soldering, 10 seconds) (lead tips only) ......................... Thermal resistance, junction to case (JC): 4/ Case P ................................................................................................................... Case X ................................................................................................................... GND - 0.3 V to VDD + 0.3 V GND - 0.3 V to 6.0 V 2,000 V 3/ +150C -65C to +150C +300C 20C/W 15C/W 1.4 Recommended operating conditions. Supply voltage range (VDD) ...................................................................................... 9 V to 13.2 V 5/ Operating free-air temperature range (TA) ................................................................ -55C to +125C 1.4.1 Operational performance characteristics. 6/ Under voltage lockout (UVLO) section, hysteresis voltage : Device types 01 02, 05, and 06 .............................................................................. Device types 03, 04, 07, and 08 ............................................................................. Voltage reference (VREF) section, long term stability (TA = 125C at 1,000 hours) .. Error amplifier (EA) section, open loop voltage gain .................................................. EA section, unity gain bandwidth ............................................................................... EA section, power supply rejection ratio (f = 120 Hz, VDD = 9 V to 13.2 V) .............. Oscillator (OSC) section, temperature stability .......................................................... OSC section, amplitude, peak to peak ...................................................................... OSC section, resistance timing / capacitance timing (RTCT) discharge voltage ....... OUTPUT section, peak output current (COUT = 1 nF) ............................................... 0.4 V 0.8 V 5 mV 90 dB 1.5 MHz 80 dB 5% 1.75 V 1V 1A ______ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Absolute maximum ratings apply to operation in a heavy ion environment as per Table IB. For applications that operate outside a heavy ion environment, the 14.7 V absolute maximum rating increases to 16.5 V. 3/ The HBM rating is 250 V for product having a date code of 1036 or earlier. The HBM rating is 2,000 V for product beginning with date code 1037. 4/ JC is measured with the component mounted on a high effective thermal conductivity test board in free air. 5/ All voltages are with respect to GND. 6/ The values shown reflect TA = +25C operation and are not guaranteed. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-07249 A REVISION LEVEL F SHEET 3 1.5 Radiation features. Maximum total dose available (dose rate = 50 – 300 rads(Si)/s): Device types 01, 02, 03, 04 .................................................................................... Device types 05, 06, 07, 08 .................................................................................... Maximum total dose available (dose rate 0.01 rads(Si)/s): Device type 05, 06, 07, 08 .................................................................................... Single event phenomenon (SEP): Single event latchup (SEL) observed requiring a power cycle to recover operation at effective LET (see 4.4.4.3) ............................................................................. 100 krads(Si) 7/ 100 krads(Si) 8/ 50 krads(Si) 8/ 2 43 MeV/mg/cm 2 80 MeV/mg/cm 2 No Single event latchup (SEL) occurs at effective LET (see 4.4.4.3) ..................... 43 MeV/mg/cm No Single event burnout (SEB) at VDD 13.5 V with an angle of incidence 2 of 0 degrees for ion LET (see 4.4.4.3) .............................................................. 80 MeV/mg/cm No Single event burnout (SEB) at VDD 14.4 V with an angle of incidence 2 and 9/ 10/ 11/ 9/ 10/ 9/ 10/ of 60 degrees for ion LET (see 4.4.4.3) ............................................................ 43 MeV/mg/cm 9/ 10/ No Single event transient (SET) (VOUT within 3%) at LET (see 4.4.4.3) ............ ≤ 40 MeV/mg/cm 9/ 10/ 2 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 MIL-STD-1835 - Test Method Standard Microcircuits. Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 MIL-HDBK-780 - List of Standard Microcircuit Drawings. Standard Microcircuit Drawings. (Copies of these documents are available online at http://quicksearch.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) ______ 7/ Device types 01, 02, 03, and 04 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. The radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 100 krads(Si) . 8/ Device types 05, 06, 07, and 08 radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 100 krads(Si), and condition D to a maximum total dose of 50 krads(Si). 9/ SEP tests performed with VREF bypass capacitor of 0.22 F and FSW = 200 kHz. SEB and SEL tests done on a stand alone open loop configuration. For SEL, no latch up requiring manual intervention were observed. SET tests done in a closed loop configuration. The (VOUT) was measured across bulk capacitor of the application. 10/ Limits are characterized at initial qualification and after any design or process changes which may affect the SEP characteristics but are not production tested unless specified by the customer through the purchase order or contract. See manufacturer’s SEE test report for more information. 11/ This is a non-destructive event in which part operation is stopped and which requires a power cycle to recover operation. The part does not enter a high current state. See the manufacturer’s SEE report for more information. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-07249 A REVISION LEVEL F SHEET 4 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. ASTM INTERNATIONAL (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) from Heavy Ion Irradiation of semiconductor Devices. (Copies of these documents are available online at http://www.astm.org or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA, 19428-2959). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q, T and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q, T and V. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q, T and V shall be in accordance with MIL-PRF-38535. 3.5.1 Certification/compliance mark. The certification mark for device classes Q, T and V shall be a "QML" or "Q" as required in MIL-PRF-38535. 3.6 Certificate of compliance. For device classes Q, T and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturer's product meets, for device classes Q, T and V, the requirements of MIL-PRF-38535 and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q, T and V in MIL-PRF-38535 shall be provided with each lot of microcircuits delivered to this drawing. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-07249 A REVISION LEVEL F SHEET 5 TABLE IA. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max 01,02, 05,06 6.5 7.5 03,04, 07,08 8.0 9.0 01,02, 05,06 6.1 6.9 03,04, 07,08 7.3 8.0 Undervoltage lockout section START threshold voltage 1,2,3 STOP threshold voltage Startup current 1,2,3 IDD 1,2,3 VDD START threshold M,D,P,L,R All 125 1 V V A 500 Operating current IDD 3/ 1,2,3 All 4.0 mA Operating supply current ID Includes 1 nF GATE loading 1,2,3 All 5.5 mA VREF Over line 1,2,3 All 4.925 Current limit, sourcing 1,2,3 All -20 mA Current limit, sinking 1,2,3 All 5 mA 1,2,3 All -1.0 1.0 A 1,2,3 All 0.97 1.03 V 1,2,3 All 2.5 3.5 V/V 9,10,11 All 55 ns Reference voltage section Overall accuracy 5.050 V (VDD = 9 V to 13.2 V), load of 1 mA and 10 mA, temperature Current sense section Input bias current IIB VCS = 1 V Input signal, maximum Gain, 0 VCS 910 mV, ACS = VCOMP / VCS VFB = 0 V CS to OUT delay See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-07249 A REVISION LEVEL F SHEET 6 TABLE IA. Electrical performance characteristics – Continued. Test Symbol Conditions 1/ 2/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Error amplifier section Reference voltage VREF VFB = VCOMP 1,2,3 All 2.475 2.530 V FB input bias current FBIIB VFB = 0 V 1,2,3 All -1.0 1.0 A COMP sink current VCOMP = 1.5 V, VFB = 2.7 V 1,2,3 All 1.0 mA COMP source current VCOMP = 1.5 V, VFB = 2.3 V 1,2,3 All -0.4 mA COMP high level output voltage VOH VFB = 2.3 V 1,2,3 All 4.80 VREF V COMP low level output voltage VOL VFB = 2.7 V 1,2,3 All 0.4 1.0 V Frequency accuracy Initial 4,5,6 All 48 53 kHz Frequency variation with ( f13.2 V – f9 V ) / f12 V 4,5,6 All 1.0 % IDC RTCT = 2.0 V 1,2,3 All 8.5 mA VODHS VDD – OUT, 1,2,3 All 2.0 V 1,2,3 All 2.0 V Oscillator section VDD Discharge current 6.5 Output section VOUT differential high side IOUT = -100 mA VOUT differential low VODLS OUT – GND, IOUT = 100 mA side Rise time tr COUT = 1 nF 9,10,11 All 60 ns Fall time tf COUT = 1 nF 9,10,11 All 40 ns 1,2,3 All 50 A OUTPUT OFF state leakage current VDD = 5 V See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-07249 A REVISION LEVEL F SHEET 7 TABLE IA. Electrical performance characteristics – Continued. Test Symbol Conditions 1/ 2/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Min Unit Max Pulse width modulation (PWM) section Maximum duty cycle Minimum duty cycle 1/ 4,5,6 COMP = VREF COMP = GND 4,5,6 01,03, 05,07 94.0 02,04, 06,08 47.0 All % 0 % RHA device types 01, 02, 03, and 04 supplied to this drawing will meet all levels M, D, P, L, and R of irradiation. However, device types 01, 02, 03, and 04 are only tested at the “R” level accordance with MIL-STD-883 method 1019 condition A (see 1.5 herein). Device types 01, 02, 03, and 04 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. RHA device types 05, 06, 07, and 08 supplied to this drawing will meet all levels M, D, P, L, and R of irradiation for condition A and meet all levels M, D, P, and L for condition D. However, device types 05, 06, 07, and 08 are only tested at the “R” level in accordance with MIL-STD-883, method 1019, condition A and tested at the “L” level in accordance with MIL-STD-883, method 1019, condition D (see 1.5 herein). Pre and post irradiation values are identical unless otherwise specified in table IA. When performing post irradiation electrical measurements for any RHA level, TA = +25C. 2/ Unless otherwise specified, VDD = 13.2 V, resistance timing (RT) = 10 k, and capacitance timing (CT) = 3.3 nF. 3/ This is the VDD current consumed when the device is active but not switching. Does not include gate drive current. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-07249 A REVISION LEVEL F SHEET 8 TABLE IB. SEP test limits. 1/ 2/ 3/ Device types SEP Temperature (TA) Biased VDD Effective linear energy transfer (LET) and angle of incidence 2 43 MeV/mg/cm at 0, 01, 02, 03, 04, 05, 06, 07, 08 SEL Observed 4/ 3/ 4/ 5/ 6/ 7/ 13.5 V 43 MeV/mg/cm at 60 2 and 80 MeV/mg/cm at 0 2 No SEL 6/ +125C 10 5/ 14.7 V 43 MeV/mg/cm at 0 No SEB 6/ +125C 10 5/ 13.5 V ≤ 80 MeV/mg/cm at 0 14.4 V ≤ 43 MeV/mg/cm at 60 13.5 V ≤ 40 MeV/mg/cm at 0 No SET 6/ (VOUT within 3%) 1/ 2/ +125C 10 5/ 2 +25C 10 7/ 2 2 2 For single event phenomena (SEP) test conditions, see 4.4.4.3 herein. Technology characterization and model verification supplemented by in-line data may be used in lieu of end of line testing. Test plan must be approved by the technical review board and qualifying activity. Limits are characterized at initial qualification and after any design or process changes which may affect the SEP characteristics but are not production tested unless specified by the customer through the purchase order or contract. See manufacturer’s SEE test report for more information. This is a non-destructive event in which part operation is stopped and which requires a power cycle to recover operation. The part does not enter a high current state. See the manufacturer’s SEE report for more information. The worst case temperature, TA +125C 10 for latch up and burn-out. SEP tests performed with VREF bypass capacitor of 0.22 F and FSW = 200 kHz. SEB and SEL tests done on a stand alone open loop configuration. For SEL, no latch up requiring manual intervention were observed. SET tests done in a closed loop configuration. The (VOUT) was measured across bulk capacitor of the application. The worst case temperature, TA +25C 10 for SET. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-07249 A REVISION LEVEL F SHEET 9 Case X FIGURE 1. Case outline. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-07249 A REVISION LEVEL F SHEET 10 Case X – continued. Symbol Inches Millimeters Notes Min Max Min Max A 0.070 0.115 1.18 2.92 b 0.015 0.022 0.38 0.56 b1 0.015 0.019 0.38 0.48 c 0.004 0.009 0.10 0.23 c1 0.004 0.007 0.10 0.18 D 0.245 0.265 6.22 6.73 E 0.245 0.265 6.22 6.73 E1 --- 0.280 --- 7.11 E2 0.170 0.180 4.32 4.57 E3 0.030 --- 0.76 --- 8 3 e 0.050 BSC 4 4 1.27 BSC k --- --- --- --- L 0.250 0.370 6.35 9.40 Q 0.026 --- 0.66 --- 9 S1 0.005 --- 0.13 --- 7 M --- 0.0015 --- 0.04 N 8 8 NOTES: 1. The U.S. government preferred system of measurement is the metric SI system. However, since this item was originally designed using inch-pound units of measurement, in the event of conflict between the metric and inch-pound units, the inch-pound units shall take precedence. 2. Index area: A notch or a pin one identification mark shall be located adjacent to pin one and shall be located within the shaded area shown. The manufacturer’s identification shall not be used as a pin one identification mark. Alternately, a tab (dimension k) may be used to identify pin one. 3. If a pin one identification mark is used in addition to a tab, the limits of dimension k do not apply. 4. This dimension allows for off-center lid, meniscus, and glass overrun. 5. Dimensions b1 and c1 apply to lead base metal only. Dimension M applies to lead plating and finish thickness. The maximum limits of lead dimensions b and c or M shall be measured at the centroid of the finished lead surfaces, when solder dip or tin plate lead finish is applied. 6. N is the maximum number or terminal positions. 7. Measure dimension S1 at all four corners. 8. For bottom brazed lead packages, no organic or polymeric materials shall be molded to the bottom of the package to cover the leads. 9. Dimension Q shall be measured at the point of exit (beyond the meniscus) of the lead from the body. Dimension Q minimum shall be reduced by 0.0015 inch (0.038 mm) maximum when solder dip lead finish is applied. FIGURE 1. Case outline – Continued. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-07249 A REVISION LEVEL F SHEET 11 Device types 01, 02, 03, 04, 05, 06, 07, 08 Case outlines P and X Terminal number Terminal symbol Description 1 COMP COMP is the output of the error amplifier and the input of the PWM comparator. 2 FB The output voltage feedback is connected to the inverting input of the error amplifier through this pin. 3 CS Current sense input to the PWM comparator. 4 RTCT Oscillator timing control pin. 5 GND GND is the power and small signal reference ground for all functions. 6 OUT Drive output to the power switching device 7 VDD VDD is the power connection for the device. 8 VREF The 5.00 V reference voltage output. FIGURE 2. Terminal connections. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-07249 A REVISION LEVEL F SHEET 12 FIGURE 3. Logic diagram. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-07249 A REVISION LEVEL F SHEET 13 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q, and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan, including screening (4.2), qualification (4.3), and conformance inspection (4.4). The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class T, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 and the device manufacturer’s QM plan including screening, qualification, and conformance inspection. The performance envelope and reliability information shall be as specified in the manufacturer’s QM plan. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class T, screening shall be in accordance with the device manufacturer’s Quality Management (QM) plan, and shall be conducted on all devices prior to qualification and technology conformance inspection. 4.2.1 Additional criteria for device classes Q, T and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. b. For device classes Q, T and V interim and final electrical test parameters shall be as specified in table IIA herein. c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, Appendix B. 4.3 Qualification inspection for device classes Q, T and V. Qualification inspection for device classes Q and V shall be in accordance with MIL-PRF-38535. Qualification inspection for device class T shall be in accordance with the device manufacturer’s Quality Management (QM) plan. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with MIL-PRF-38535 including groups A, B, C, D, and E inspections, and as specified herein. Technology conformance inspection for class T shall be in accordance with the device manufacturer’s Quality Management (QM) plan. 4.4.1 Group A inspection. a. Tests shall be as specified in table IIA herein. b. Subgroups 7 and 8 in table I, method 5005 of MIL-STD-883 shall be omitted. 4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein. 4.4.2.1 Additional criteria for device classes Q, T and V. The steady-state life test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-STD-883. 4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-07249 A REVISION LEVEL F SHEET 14 TABLE IIA. Electrical test requirements. Test requirements Subgroups (in accordance with MIL-PRF-38535, table III) Interim electrical parameters (see 4.2) Final electrical parameters (see 4.2) Group A test requirements (see 4.4) Group C end-point electrical parameters (see 4.4) Group D end-point electrical parameters (see 4.4) Group E end-point electrical parameters (see 4.4) Device class Q --- Device class V 1,4,9 Device class T As specified in QM plan 1,2,3,4,5, 1/ 6,9,10,11 1,2,3,4,5,6, 9,10,11 1,2,3,4,5,6, 9,10,11 1,4,9 1,2,3,4, 1/ 2/ 5,6,9,10,11 1,2,3,4,5,6, 9,10,11 1,2,3,4, 2/ 5,6,9,10,11 1,4,9 As specified in QM plan 1,4,9 1,4,9 As specified in QM plan As specified in QM plan As specified in QM plan As specified in QM plan 1/ For device class Q, PDA applies to subgroup 1. For device class V, PDA applies to subgroup 1 and deltas. 2/ Delta limits as specified in table IIB shall be required where specified, and the delta limits shall be completed with reference to the zero hour electrical parameters (see table IA). TABLE IIB. Burn-in and life test delta parameters. (TA = +25C). 1/ 2/ Parameters Reference output voltage CT discharge current Error amp input bias current Operating supply current 1/ 2/ Min Max Units VREF -50 50 mV IDC -0.5 0.5 mA FBIIB -0.2 0.2 A ID -0.5 0.5 mA Deltas are performed at room temperature. Applies to device types 01, 02, 03, 04, 05, 06, 07, and 08. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 Symbol SIZE 5962-07249 A REVISION LEVEL F SHEET 15 4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End-point electrical parameters shall be as specified in table IIA herein. 4.4.4.1 Group E inspection for device class T. For device class T, the RHA requirements shall be in accordance with the class T radiation requirements of MIL-PRF-38535. End-point electrical parameters shall be as specified in table IIA herein. 4.4.4.2 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883 method 1019, condition A and as specified herein for device types 01, 02, 03, 04, 05, 06, 07, and 08. In addition, for device types 05, 06, 07, and 08 a low dose rate test shall be performed in accordance with MIL-STD-883 method 1019, condition D and as specified herein. For device class T, the total dose requirements shall be in accordance with the class T radiation requirements of MIL-PRF-38535. 4.4.4.2.1 Accelerated annealing test. Accelerated annealing tests shall be performed on all devices requiring a RHA level greater than 5 krads(Si). The post-anneal end-point electrical parameter limits shall be as specified in table IA herein and shall be the pre-irradiation end-point electrical parameter limit at 25C ±5C. Testing shall be performed at initial qualification and after any design or process changes which may affect the RHA response of the device. 4.4.4.3 Single event phenomena (SEP). When specified in the purchase order or contract, SEP testing shall be performed on class V devices. SEP testing shall be performed on the Standard Evaluation Circuit (SEC) or alternate SEP test vehicle as approved by the qualifying activity at initial qualification and after any design or process changes which may affect the upset or latchup characteristics. Test four devices with zero failures. ASTM F1192 may be used as a guideline when performing SEP testing. The recommended test conditions for SEP are as follows: a. The ion beam angle of incidence shall be between normal to the die surface and 60 to the normal, inclusive (i.e. 0 angle 60). No shadowing of the ion beam due to fixturing or package related affects is allowed. b. The fluence shall be 100 errors or 10 ions/cm . c. The flux shall be between 10 and 10 ions/cm /s. The cross-section shall be verified to be flux independent by measuring the cross-section at two flux rates which differ by at least an order of magnitude. d. The particle range shall be 20 micron in silicon. e. The test temperature shall be +25C 10 for SET. The test temperature shall be +125C 10 for SEB and SEL. f. For SEL, SEB, and SET test limits, see table IB herein. 7 2 5 STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 2 2 SIZE 5962-07249 A REVISION LEVEL F SHEET 16 5. PACKAGING 5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes Q, T and V. 6. NOTES 6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. 6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor prepared specification or drawing. 6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal. 6.3 Record of users. Military and industrial users should inform DLA Land and Maritime when a system application requires configuration control and which SMD's are applicable to that system. DLA Land and Maritime will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic devices (FSC 5962) should contact DLA Land and Maritime-VA, telephone (614) 692-8108. 6.4 Comments. Comments on this drawing should be directed to DLA Land and Maritime-VA, Columbus, Ohio 43218-3990, or telephone (614) 692-0540. 6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-PRF-38535 and MIL-HDBK-1331. 6.6 Sources of supply. 6.6.1 Sources of supply for device classes Q, T and V. Sources of supply for device classes Q, T and V are listed in MIL-HDBK-103 and QML-38535. The vendors listed in MIL-HDBK-103 and QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DLA Land and Maritime-VA and have agreed to this drawing. 6.7 Additional information. When applicable, a copy of the following additional data shall be maintained and available from the device manufacturer: a. RHA upset levels. b. Test conditions (SEP). c. Number of burnouts (SEB). d. Number of transients (SET). e. Occurrence of latch-up (SEL). STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-07249 A REVISION LEVEL F SHEET 17 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-07249 A.1 SCOPE A.1.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers approved QM plan for use in monolithic microcircuits, multi-chip modules (MCMs), hybrids, electronic modules, or devices using chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of military high reliability (device class Q) and space application (device class V) are reflected in the Part or Identification Number (PIN). When available, a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN. A.1.2 PIN. The PIN is as shown in the following example: 5962 R 07249 Federal stock class designator \ RHA designator (see A.1.2.1) 01 V 9 A Device type (see A.1.2.2) Device class designator (see A.1.2.3) Die code Die details (see A.1.2.4) / \/ Drawing number A.1.2.1 RHA designator. Device classes Q and V RHA identified die meet the MIL-PRF-38535 specified RHA levels. A dash (-) indicates a non-RHA die. A.1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic Rising under voltage lockout Maximum duty cycle 01 02 03 04 05 06 07 08 ISL78840ASRH ISL78841ASRH ISL78843ASRH ISL78845ASRH ISL78840ASEH ISL78841ASEH ISL78843ASEH ISL78845ASEH 7.0 V 7.0 V 8.4 V 8.4 V 7.0 V 7.0 V 8.4 V 8.4 V 100 % 50 % 100 % 50 % 100 % 50 % 100 % 50 % Circuit function Pulse width modulator controller Pulse width modulator controller Pulse width modulator controller Pulse width modulator controller Pulse width modulator controller Pulse width modulator controller Pulse width modulator controller Pulse width modulator controller A.1.2.3 Device class designator. Device class Q or V STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 Device requirements documentation Certification and qualification to the die requirements of MIL-PRF-38535 SIZE 5962-07249 A REVISION LEVEL F SHEET 18 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-07249 A.1.2.4 Die details. The die details designation is a unique letter which designates the die's physical dimensions, bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product and variant supplied to this appendix. A.1.2.4.1 Die physical dimensions. Die type Figure number 01, 02, 03, 04, 05, 06, 07, 08 A-1 A.1.2.4.2 Die bonding pad locations and electrical functions. Die type Figure number 01, 02, 03, 04, 05, 06, 07, 08 A-1 A.1.2.4.3 Interface materials. Die type Figure number 01, 02, 03, 04, 05, 06, 07, 08 A-1 A.1.2.4.4 Assembly related information. Die type Figure number 01, 02, 03, 04, 05, 06, 07, 08 A-1 A.1.3 Absolute maximum ratings. See paragraph 1.3 herein for details. A.1.4 Recommended operating conditions. See paragraph 1.4 herein for details. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-07249 A REVISION LEVEL F SHEET 19 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-07249 A.2 APPLICABLE DOCUMENTS. A.2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARD MIL-STD-883 - Test Method Standard Microcircuits. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http://quicksearch.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) A.2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. A.3 REQUIREMENTS A.3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturer’s Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. A.3.2 Design, construction and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein and the manufacturer’s QM plan for device classes Q and V. A.3.2.1 Die physical dimensions. The die physical dimensions shall be as specified in A.1.2.4.1 and on figure A-1. A.3.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as specified in A.1.2.4.2 and on figure A-1. A.3.2.3 Interface materials. The interface materials for the die shall be as specified in A.1.2.4.3 and on figure A-1. A.3.2.4 Assembly related information. The assembly related information shall be as specified in A.1.2.4.4 and on figure A-1. A.3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be as defined in paragraph 3.2.4 herein. A.3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and post-irradiation parameter limits are as specified in table IA of the body of this document. A.3.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing sufficient to make the packaged die capable of meeting the electrical performance requirements in table IA. A.3.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a customer, shall be identified with the wafer lot number, the certification mark, the manufacturer’s identification and the PIN listed in A.1.2 herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-07249 A REVISION LEVEL F SHEET 20 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-07249 A.3.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see A.6.4 herein). The certificate of compliance submitted to DLA Land and Maritime -VA prior to listing as an approved source of supply for this appendix shall affirm that the manufacturer’s product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the requirements herein. A.3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall be provided with each lot of microcircuit die delivered to this drawing. A.4 VERIFICATION A.4.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan. The modifications in the QM plan shall not affect the form, fit, or function as described herein. A.4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the manufacturer’s QM plan. As a minimum, it shall consist of: a. Wafer lot acceptance for class V product using the criteria defined in MIL-STD-883, method 5007. b. 100% wafer probe (see paragraph A.3.4 herein). c. 100% internal visual inspection to the applicable class Q or V criteria defined in MIL-STD-883, method 2010 or the alternate procedures allowed in MIL-STD-883, method 5004. A.4.3 Conformance inspection. A.4.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see A.3.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of packaged die shall be as specified in table II herein. Group E tests and conditions are as specified in paragraphs 4.4.4, 4.4.4.1, 4.4.4.1.1, 4.4.4.2, and 4.4.4.3 herein. A.5 DIE CARRIER A.5.1 Die carrier requirements. The requirements for the die carrier shall be accordance with the manufacturer’s QM plan or as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and electrostatic protection. A.6 NOTES A.6.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications, and logistics purposes. A.6.2 Comments. Comments on this appendix should be directed to DLA Land and Maritime -VA, Columbus, Ohio, 43218-3990 or telephone (614)-692-0540. A.6.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-PRF-38535 and MIL-HDBK-1331. A.6.4 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535. The vendors listed within MIL-HDBK-103 and QML-38535 have submitted a certificate of compliance (see A.3.6 herein) to DLA Land and Maritime -VA and have agreed to this drawing. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-07249 A REVISION LEVEL F SHEET 21 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-07249 FIGURE A-1. Die bonding pad locations and electrical functions. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-07249 A REVISION LEVEL F SHEET 22 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-07249 Die bonding pad locations and electrical functions Die physical dimensions. Die size: X = 2030 m (80 mils). Y = 2030 m (80 mils). Die thickness: 19 mils 1 mil Interface materials. Top metallization: AlCu (0.5%), 2.7 m 0.4 m Backside metallization: Silicon Glassivation. Type: Silicon oxide and silicon nitride Thickness: 0.3 m 0.03 m and 1.2 m 0.12 m Substrate: Silicon. Junction isolation. Assembly related information. Substrate potential: Unbiased Special assembly instructions: 1) CTRT, OUT, and VREF must be double bonded (two wires). 2) GND and VDD must have both bond pads connected. FIGURE A-1. Die bonding pad locations and electrical functions - continued. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-07249 A REVISION LEVEL F SHEET 23 STANDARD MICROCIRCUIT DRAWING BULLETIN DATE: 15-06-12 Approved sources of supply for SMD 5962-07249 are listed below for immediate acquisition information only and shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a certificate of compliance has been submitted to and accepted by DLA Land and Maritime-VA. This information bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. DLA Land and Maritime maintains an online database of all current sources of supply at http://www.landandmaritime.dla.mil/Programs/Smcr/. Standard microcircuit drawing PIN 1/ Vendor CAGE number Vendor similar PIN 2/ 5962R0724901QPC 34371 ISL78840ASRHQD 5962R0724902QPC 34371 ISL78841ASRHQD 5962R0724903QPC 34371 ISL78843ASRHQD 5962R0724904QPC 34371 ISL78845ASRHQD 5962R0724901QXC 34371 ISL78840ASRHQF 5962R0724902QXC 34371 ISL78841ASRHQF 5962R0724903QXC 34371 ISL78843ASRHQF 5962R0724904QXC 34371 ISL78845ASRHQF 5962R0724904TXC 34371 ISL78845ASRHTF 5962R0724901VPC 34371 ISL78840ASRHVD 5962R0724902VPC 34371 ISL78841ASRHVD 5962R0724903VPC 34371 ISL78843ASRHVD 5962R0724904VPC 34371 ISL78845ASRHVD 5962R0724905VPC 34371 ISL78840ASEHVD 5962R0724906VPC 34371 ISL78841ASEHVD 5962R0724907VPC 34371 ISL78843ASEHVD 5962R0724908VPC 34371 ISL78845ASEHVD 5962R0724901VXC 34371 ISL78840ASRHVF 5962R0724902VXC 34371 ISL78841ASRHVF 5962R0724903VXC 34371 ISL78843ASRHVF 5962R0724904VXC 34371 ISL78845ASRHVF 5962R0724905VXC 34371 ISL78840ASEHVF 5962R0724906VXC 34371 ISL78841ASEHVF 5962R0724907VXC 34371 ISL78843ASEHVF 5962R0724908VXC 34371 ISL78845ASEHVF 1 of 2 STANDARD MICROCIRCUIT DRAWING BULLETIN – CONTINUED. DATE: 15-06-12 Standard microcircuit drawing PIN 1/ Vendor CAGE number Vendor similar PIN 2/ 5962R0724901V9A 34371 ISL78840ASRHVX 5962R0724902V9A 34371 ISL78841ASRHVX 5962R0724903V9A 34371 ISL78843ASRHVX 5962R0724904V9A 34371 ISL78845ASRHVX 5962R0724905V9A 34371 ISL78840ASEHVX 5962R0724906V9A 34371 ISL78841ASEHVX 5962R0724907V9A 34371 ISL78843ASEHVX 5962R0724908V9A 34371 ISL78845ASEHVX 1/ The lead finish shown for each PIN representing a hermetic package is the most readily available from the manufacturer listed for that part. If the desired lead finish is not listed contact the vendor to determine its availability. 2/ Caution. Do not use this number for item acquisition. Items acquired to this number may not satisfy the performance requirements of this drawing. Vendor CAGE number Vendor name and address 34371 Intersil Corporation 1650 Robert J. Conlan Blvd. NE Palm Bay, FL 32905-3406 The information contained herein is disseminated for convenience only and the Government assumes no liability whatsoever for any inaccuracies in the information bulletin. 2 of 2