Datasheet

PHOTOMULTIPLIER TUBES
R9110
R9110P (For Photon Counting)
High Sensitivity and Lower Dark Current, Lower Dark Count
Wide Spectral Range with Low ENI
FEATURES
● Low Dark Current ...................................... 5 nA (after 30 minutes)
● Low Dark Counts (R9110P) ...................... 500 s-1
● Wide Spectral Response .......................... 185 nm to 900 nm
● High Cathode Sensitivity
Luminous ................................................ 525 µA/lm
Radiant at 450 nm .................................. 90 mA/W
QE at 450 nm .......................................... 24.8 %
● High Anode Sensitivity (at 1000 V)
Luminous ................................................ 10 000 A/lm
● High Signal to Noise Ratio
The R9110 is 28 mm (1-1/8 inch) diameter, 9-stage, side-on type photomultiplier tube having an extended red multialkali photocathode
same as the R3896. The R9110 features very low dark current, extremely high quantum efficiency, high gain, good S/N ratio and wide
spectral response from UV to near infrared.
The R9110P is a photon counting version of the R9110 with low dark
counts.
GENERAL
Weight
Operating Ambient Temperature
Storage Temperature
Suitable Socket
Suitable Socket Assembly
Unit
nm
nm
Multialkali
8×6
UV glass
—
mm
—
Multialkali
Circular-cage
9
—
—
—
4
6
11-pin base
JEDEC No. B11-88
46
-30 to +50
-30 to +50
E678-11A (Sold Separately)
E717-63 (Sold Separately)
E717-74 (Sold Separately)
pF
pF
—
g
°C
°C
—
—
Figure 1: Typical Spectral Response
and Equivalent Noise Input
100
10
TPMSB0207EA
10-12
CATHODE
RADIANT
SENSITIVITY
10-13
QUANTUM
EFFICIENCY
10-14
1
0.1
10-15
R3896
0.01
EQUIVALENT
NOISE INPUT
R9110
R9110P
10-16
0.001
10-17
100 200 300 400 500 600 700 800 900 1000
WAVELENGTH (nm)
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2012 Hamamatsu Photonics K.K.
EQUIVALENT NOISE INPUT (W)
Base
Description / Value
185 to 900
450
CATHODE RADIANT SENSITIVITY (mA/W)
QUANTUM EFFICIENCY (%)
Parameter
Spectral Response
Wavelength of Maximum Response
Photocathode
Material
Minimum Effective Area
Window Material
Dynode
Secondary Emitting Surface
Structure
Number of Stages
Direct Interelectrode Capacitances
Anode to Last Dynode
Anode to All Other Electrodes
PHOTOMULTIPLIER TUBES
R9110, R9110P (For Photon Counting)
MAXIMUM RATINGS (Absolute Maximum Values at 25 °C)
Parameter
Supply Voltage
Between Anode and Cathode
Between Anode and Last Dynode
Average Anode Current A
Value
Unit
1250
250
0.1
V
V
mA
CHARACTERISTlCS (at 25 °C)
Parameter
Cathode Sensitivity
Quantum Efficiency
at 254 nm
at 450 nm
at 633 nm
at 852 nm
Luminous B
Radiant
at 254 nm
at 450 nm
at 633 nm
at 852 nm
Red / White Ratio C
Blue Sensitivity Index D
Anode Sensitivity
Luminous E
Gain E
Anode Dark Current F (After 30 min Storage in Darkness)
Anode Dark Counts F (for the R9110P)
ENI (Equivalent Noise Input) G
Time Response
Anode Pulse Rise Time H
Electron Transit Time I
Transit Time Spread (TTS) J
Anode Current Stability K
Light Hysteresis
Voltage Hysteresis
Min.
Typ.
Max.
Unit
—
—
—
—
400
—
—
—
—
0.2
—
29.3
24.8
14.3
0.73
525
60
90
73
5.0
0.4
15
—
—
—
—
—
—
—
—
—
—
—
%
%
%
%
µA/lm
mA/W
mA/W
mA/W
mA/W
—
—
4000
—
—
—
—
10 000
1.9 × 107
5
500
1.0 × 10-16
—
—
15
1000
—
A/lm
—
nA
s-1
W
—
—
—
2.2
22
1.2
—
—
—
ns
ns
ns
—
—
0.1
1.0
—
—
%
%
NOTES
Electrodes
Distribution
Ratio
K
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9
1
1
1
1
1
1
1
1
1
P
1
SuppIy Voltage: 1000 V, K: Cathode, Dy: Dynode, P: Anode
F: Measured at the voltage producing the gain of 1 ×
and the voltage
distribution ratio shown in table 1 below.
G: ENI is an indication of the photon-limited signal-to-noise ratio. It refers to
the amount of light in watts to produce a signal-to-noise ratio of unity in
the output of a photomultiplier tube.
106
2q.ldb.G. f
(W)
S
where q = Electronic charge. (1.60 × 10-19 coulomb)
ldb = Anode dark current (after 30 minute storage) in amperes.
G = Gain.
f = Bandwidth of the system in hertz. (usually 1 hertz)
S = Anode radiant sensitivity in amperes per watt at the
wavelength of peak response
ENI =
H: The rise time is the time for the output pulse to rise from 10% to 90% of
the peak amplitude when the entire photocathode is illuminated by a delta
function light pulse.
I: The electron transit time is the interval between the arrival of delta
function light pulse at the entrance window of the tube and the time when
the anode output reaches the peak amplitube. In measurement, the whole
photocathode is illuminated.
J: Also called transit time jitter. This is the fluctuation in electron transit time
between individual pulses in the single photoelectron mode, and may be
defined as the FWHM of the frequency distribution of electron transit
times.
K: Hysteresis is temporary instability in anode current after light and voltage
are applied.
lmax.
lmin.
Hysteresis =
100 (%)
li
ANODE
CURRENT
A: Averaged over any interval of 30 seconds maximum.
B: The light source is a tungsten filament lamp operated at a distribution
temperature of 2856K.
Supply voltage is 100 volts between the cathode and all other electrodes
connected together as anode.
C: Red/White ratio is the quotient of the cathode current measured using a
red filter (Toshiba R-68) interposed between the light source and the tube
by the cathode current measured with the filter removed under the same
conditions as Note B.
D: The value is cathode output current when a blue filter (Corning CS 5-58
polished to 1/2 stock thickness) is interposed between the light source
and the tube under the same condition as Note B.
E: Measured with the same light source as Note B and with the voltage
distribution ratio shown in Table 1 below.
Table 1:Voltage Distribution Ratio
l max.
li
l min.
TIME
0
5
6
7 (minutes)
TPMSB0002EA
(1)Light Hysteresis
The tube is operated at 750 volts with an anode current of 1 microampere for
5 minutes. The light is then removed from the tube for a minute. The tube is
then re-illuminated by the previous light level for a minute to measure the
variation.
(2)Voltage Hysteresis
The tube is operated at 300 volts with an anode current of 0.1 micro-ampere
for 5 minutes. The light is then removed from the tube and the supply voltage
is quickly increased to 800 volts. After a minute, the supply voltage is then
reduced to the previous value and the tube is re-illuminated for a minute to
measure the variation.
Figure 2: Anode Luminous Sensitivity and
Gain Characteristics
105
Figure 3: Typical Time Response
TPMSB0206EB
108
100
TPMSB0157EB
80
TYPICAL GAIN
60
ANODE LUMINOUS SENSITIVITY (A/lm)
104
107
40
TRANSIT
106
105
MINIMUM ANODE
SENSITIVITY
GAIN
TYPICAL ANODE
SENSITIVITY
102
TIME
20
TIME (ns)
103
10
8
6
101
104
4
RISE TIM
100
103
10-1
500
700
2
102
1500
1000
1
500
700
1000
1500
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
Figure 4: Typical Temperature Characteristics
of Dark Current (R9110)
(at 1000 V, after 30 min storage)
100
E
Figure 5: Typical Temperature Characteristics
of Dark Count (R9110P)
TPMSB0241EA
104
TPMSB0240EA
103
DARK COUNT (s-1)
ANODE DARK CURRENT (nA)
10
1
0.1
102
101
0.01
0.001
-30
-20
-10
0
10
20
30
TEMPERATURE (°C)
40
50
100
-30
-20
-10
0
10
TEMPERATURE (°C)
20
30
PHOTOMULTIPLIER TUBES
R9110, R9110P (For Photon Counting)
Figure 5: Dimensional Outline and Basing Diagram (Unit: mm)
29.0 ± 1.7
Figure 6: Socket (Unit: mm)
Sold Separately
E678-11A
8 MIN.
49
38
PHOTOCATHODE
5
DY6
6
7
8 DY8
DY2
3.5
80 MAX.
DY7
DY3 3
94 MAX.
49 ± 1
6 MIN.
DY4 4
33
DY5
9 DY9
2
10
1
DY1
5
P
11
29
K
18
4
DIRECTION OF LIGHT
32.2 ± 0.5
INSULATION COVER
11 PIN BASE
JEDEC No. B11-88
TACCA0064EA
TPMSA0016EC
Figure 7: D Type Socket Assembly (Unit: mm) Sold Separately
E717-63
E717-74
HOUSING
(INSULATOR)
10
P
R10
49.0 ± 0.3
9
DY8
8
DY7
C2
R8
C1
26.0±0.2
7
4
R6
5
R1 to R10 : 330 kΩ
C1 to C3 : 10 nF
DY4
A
G
2.7
0.7
R5
31.0 ± 0.5
4
R4
HOUSING
(INSULATOR)
POTTING
COMPOUND
DY3
3
2
DY1
K
1
°
10
R2
22.4±0.2
K
8
30°
C3
R9
C2
R8
C1
7
DY6
6
DY5
5
R6
R5
DY4
4
DY3
3
DY2
2
DY1
K
1
R1 to R10 : 330 kΩ
C1 to C3 : 10 nF
R4
R3
0.7
R1
11
DY8
R10
R7
SIDE VIEW
R3
DY2
9
DY7
TOP VIEW
2
6
DY9
32.0±0.5
7
DY6
DY5
30.0 +0
-1
R9
SIGNAL
OUTPUT (A)
GND (G)
10
R7
29.0 ± 0.3
450 ± 10
C3
SOCKET
PIN No.
P
14.0±0.5
38.0 ± 0.3
DY9
PMT
SIGNAL GND
SIGNAL OUTPUT
RG-174/U(BLACK)
POWER SUPPLY GND
AWG22 (BLACK)
26.0±0.2
SOCKET
PIN No.
32.0±0.5
PMT
3.5
33.0 ± 0.3
5
R2
R1
11
-HV
AWG22 (VIOLET)
-HV (K)
4- 2.8
R13
* "Wiring diagram applies when -HV is supplied."
To supply +HV,connect the pin "G" to+HV, and the pin
"K" to the GND.
BOTTOM VIEW
TACCA0002EH
TACCA0277EA
* Hamamatsu also provides C4900 series compact high voltage power
supplies and C6270 series DP type socket assemblies which incorporate a DC to DC converter type high voltage power supply.
Warning–Personal Safety Hazards
Electrical Shock–Operating voltages applied to this
device present a shock hazard.
HAMAMATSU PHOTONICS K.K.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Electron Tube Division
314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: [email protected]
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United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: [email protected]
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: [email protected]
TPMS1080E01
Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: [email protected]
China: HAMAMATSU PHOTONICS (CHINA) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866 E-mail: [email protected] MAR. 2012. IP
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