TCLT111. Series www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, SOP-6L5, 110 °C Rated, Half Pitch, Long Mini-Flat Package 3 FEATURES 2 DESCRIPTION • • • • • • • • • • The TCLT111. series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 5-lead SOP-6L package. AGENCY APPROVALS 5 4 1 22649 • • • • • • APPLICATIONS • Switchmode power supplies • Computer peripheral interface • Microprocessor system interface SMD low profile 5 pin package Isolation test voltage 5000 VRMS CTR flexibility available see order information Special construction Extra low coupling capacitance Connected base DC input with transistor output Temperature range -55 °C to 110 °C Creepage distance > 8 mm Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 UL1577, file no. E76222 cUL - file no. E76222, equivalent to CSA 22.2 bulletin 5A DIN EN 60747-5-5 (VDE 0884-5) FIMKO BSI CQC ORDERING INFORMATION T C L T 1 1 1 SOP-6L5 # 10.2 mm PART NUMBER CTR (%) AGENCY CERTIFIED/ PACKAGE 5 mA UL, cUL, VDE, 50 to 600 FIMKO, CQC SOP-6L5 10 mA 40 to 80 5 mA 63 to 125 100 to 200 160 to 320 50 to 150 100 to 300 80 to 160 130 to 260 200 to 400 TCLT1110 TCLT1111 TCLT1112 TCLT1113 TCLT1114 TCLT1115 TCLT1116 TCLT1117 TCLT1118 TCLT1119 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 6 V Forward current IF 60 mA tp ≤ 10 μs IFSM 1.5 A Pdiss 100 mW Tj 125 °C Collector emitter voltage VCEO 70 V Emitter collector voltage VECO 7 V mA Forward surge current Power dissipation Junction temperature OUTPUT Collector current Collector peak current Power dissipation Junction temperature Rev. 1.6, 15-Oct-15 tp/T = 0.5, tp ≤ 10 ms IC 50 ICM 100 mA Pdiss 150 mW Tj 125 °C Document Number: 81282 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TCLT111. Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT COUPLER Total power dissipation Ptot 250 mW Operating ambient temperature range Tamb -55 to +110 °C Storage temperature range Tstg -55 to +125 °C Soldering temperature (1) Tsld 260 °C Notes • Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. (1) Wave soldering three cycles are allowed. Also refer to “Assembly Instruction” (www.vishay.com/doc?80054). ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF = 50 mA VF - 1.25 1.6 V VR = 0 V, f = 1 MHz Cj - 50 - pF input Forward voltage Junction capacitance output Collector emitter voltage IC = 1 mA VCEO 80 - - V Emitter collector voltage IE = 100 μA VECO 7 - - V VCE = 20 V, IF = 0 A ICEO - 10 100 nA Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat - - 0.3 V Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 Ω fc - 110 - kHz f = 1 MHz Ck - 0.3 - pF Collector emitter leakage current coupler Coupling capacitance Note • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. VCE = 5 V, IF = 5 mA TCLT1110 CTR 50 - 600 % TCLT1111 CTR 40 - 80 % TCLT1112 CTR 63 - 125 % TCLT1113 CTR 100 - 200 % TCLT1114 CTR 160 - 320 % TCLT1111 CTR 13 30 - % TCLT1112 CTR 22 45 - % TCLT1113 CTR 34 70 - % TCLT1114 CTR 56 100 - % TCLT1115 CTR 50 - 150 % TCLT1116 CTR 100 - 300 % TCLT1117 CTR 80 - 160 % TCLT1118 CTR 130 - 260 % TCLT1119 CTR 200 - 400 % VCE = 5 V, IF = 10 mA IC/IF VCE = 5 V, IF = 1 mA VCE = 5 V, IF = 5 mA Rev. 1.6, 15-Oct-15 UNIT Document Number: 81282 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TCLT111. Series www.vishay.com Vishay Semiconductors SAFETY AND INSULATION RATINGS PARAMETER Tested withstanding isolation voltage TEST CONDITION SYMBOL VALUE UNIT According to UL1577, t = 1 s VISO 5000 VRMS Maximum transient isolation voltage According to DIN EN 60747-5-5 VIOTM 8000 Vpeak Maximum repetitive peak isolation voltage According to DIN EN 60747-5-5 VIORM 890 Vpeak tTr = 60 s, ttest = 10 s, (see figure 2) Vpd 13 000 V Tamb = 25 °C, VIO = 500 V RIO ≥ 1012 Ω Tamb = 100 °C, VIO = 500 V RIO ≥ 1011 Ω Tamb = 150 °C, VIO = 500 V (construction test only) RIO ≥ 109 Ω Output safety power PSO 265 mW Input safety current ISI 130 mA Input safety temperature TS 150 °C ≥8 mm ≥8 mm 0.75 mm Partial discharge test voltage - lot test (sample test) Isolation resistance Creepage distance DIP-6, option 6 Clearance distance DIP-6, option 6 Insulation distance (internal) Note • As per IEC 60747-5-5, § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. VIOTM 300 t1, t2 t3 , t4 ttest tstres Phototransistor Pso (mW) 250 200 = 1 s to 10 s =1s = 10 s = 12 s Vpd 150 VIOWM VIORM 100 IR-diode Isi (mA) 50 0 t3 ttest t4 0 0 94 9182-2 25 50 75 100 125 150 Tsi - Safety Temperature (°C) Fig. 1 - Derating Diagram 13930 tTr = 60 s t1 t2 t stres t Fig. 2 - Test Pulse Diagram for Sample Test According to DIN EN 60747-5-5 (VDE 0884-5); IEC 60747-5-5 SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Delay time PARAMETER VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) td - 3 - μs Rise time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) tr - 3 - μs Fall time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) tf - 4.7 - μs Storage time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) ts - 0.3 - μs Turn-on time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) ton - 6 - μs Turn-off time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) toff - 5 - μs Turn-on time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4) ton - 9 - μs Turn-off time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4) toff - 10 - μs Rev. 1.6, 15-Oct-15 Document Number: 81282 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TCLT111. Series www.vishay.com +5V IF IF Vishay Semiconductors 0 I C = 2 mA; adjusted through input amplitude R G = 50 Ω tp = 0.01 T t p = 50 µs Channel I Oscilloscope R L = 1 MΩ C L = 20 pF Channel II 50 Ω 100 Ω 95 10804 Fig. 3 - Test Circuit, Non-Saturated Operation IF +5V I F = 10 mA 0 IC R G = 50 Ω tp = 0.01 T t p = 50 µs Channel I Channel II 50 Ω Oscilloscope R L ≥ 1 MΩ C L ≤ 20 pF 1 kΩ 95 10843 Fig. 4 - Test Circuit, Saturated Operation IF 0 tp IC t 100 % 90 % 10 % 0 tr td ts t on tp td tr t on (= td + tr) Pulse duration Delay time Rise time Turn-on time tf t off ts tf t off (= ts + tf) t Storage time Fall time Turn-off time 96 11698 Fig. 5 - Switching Times Rev. 1.6, 15-Oct-15 Document Number: 81282 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TCLT111. Series www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 2.30 max. 4.10 max. 10.20 3.80 + 0.30 - 0.40 0.20 2.00 0.10 ± 0.10 + 0.10 - 0.05 7.50 ± 0.20 0.45 ± 0.1 0.70 + 0.30 - 0.40 2.54 nom. 1.27 nom. 4 5 3 2.54 Possible footprint 0.90 8.20 1 22534 10.80 technical drawings according to DIN specifications 2 Pin no. 1 identification PACKAGE MARKING TCLT1113 V YWW 68 TAPE AND REEL DIMENSIONS (in millimeters) 1.75 4 2 Ø 1.55 7.5 ESD sticker 10.6 16 Tape slot in core 4.25 Direction of pulling out 2.7 0.3 Ø 1.6 330 (13") 8 Regular, special or bar code label 17999 Fig. 6 - Reel Dimensions Rev. 1.6, 15-Oct-15 5° 2.3 Fig. 7 - Tape Packing Document Number: 81282 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TCLT111. Series www.vishay.com Vishay Semiconductors SOLDER PROFILE HANDLING AND STORAGE CONDITIONS ESD level: HBM class 2 300 255 °C 240 °C 217 °C 250 Temperature (°C) max. 260 °C 245 °C Floor life: unlimited Conditions: Tamb < 30 °C, RH < 85 % Moisture sensitivity level 1, according to J-STD-020 200 max. 30 s 150 max. 100 s max. 120 s 100 max. ramp down 6 °C/s 50 max. ramp up 3 °C/s 0 0 19841 50 100 150 200 250 300 Time (s) Fig. 8 - Lead (Pb)-free Reflow Solder Profile according to J-STD-020 Rev. 1.6, 15-Oct-15 Document Number: 81282 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000