TCET1600, TCET1600G Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input FEATURES C • Isolation materials according to UL94 V-O E • Pollution degree 2 (DIN/VDE 0110 /resp. IEC 60664) • Climatic classification 55/100/21 (IEC 60068 part 1) A 17195-1 • Special construction: therefore, extra low coupling capacity of typical 0.2 pF, high common mode rejection C 4 PIN V D E C • Low temperature coefficient of CTR • Rated impulse voltage VIOTM = 10 kV peak 17197_4 DESCRIPTION The TCET1600, TCET1600G consists of a phototransistor optically coupled to 2 gallium arsenide infrared-emitting diodes in a single (4 pin) package. VDE STANDARDS (transient overvoltage) • Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV peak • Rated isolation VIOWM = 600 VRMS voltage (RMS includes DC) • Rated recurring peak voltage (repetitive) VIORM = 890 Vpeak These couplers perform safety functions according to the following equipment standards: • DIN EN 60747-5-2 (VDE 0884) Optocoupler for electrical safety requirements • IEC 60950/EN 60950 Office machines (applied for reinforced isolation for mains voltage ≤ 400 VRMS) • VDE 0804 Telecommunication apparatus and data processing • IEC 60065 Safety for mains-operated electronic and related household apparatus • VDE 0700/IEC 335 Household equipment • VDE 0160 Electronic equipment for electrical power installation • VDE 0750/IEC 60601 Medical equipment • Thickness though insulation ≥ 0.75 mm • Creepage current resistance according to VDE 0303/ IEC 60112 comparative tracking index: CTI ≥ 175 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC AGENCY APPROVALS • UL1577, file no. E52744 system code H, double protection • CSA 22.2 bulletin 5A • DIN EN 60747-5-2 (VDE 0884) • DIN EN 60747-5-5 (pending) • FIMKO ORDERING INFORMATION T C E T 1 6 0 0 # DIP DIP, 400 mil 7.62 mm 10.16 mm PART NUMBER CTR (%) AGENCY CERTIFIED/PACKAGE ± 5 mA UL, cUL, VDE, FIMKO 20 to 300 DIP-4, single channel TCET1600 DIP-4, single channel, 400 mil TCET1600G Note • G = leadform 10.16 mm; G is not marked on the body. Document Number: 83538 Rev. 1.9, 10-Dec-10 For technical questions, contact: [email protected] www.vishay.com 1 TCET1600, TCET1600G Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input ABSOLUTE MAXIMUM RATINGS PARAMETER (1) (Tamb = 25 °C, unless otherwise specified) TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 6 V Forward current IF ± 60 mA tp ≤ 10 μs Forward surge current IFSM ± 1.5 A Pdiss 100 mW Tj 125 °C Collector emitter voltage VCEO 70 V Emitter collector voltage VECO 7 V IC 50 mA Power dissipation Junction temperature OUTPUT Collector current tp/T = 0.5, tp ≤ 10 ms Collector peak current Power dissipation Junction temperature ICM 100 mA Pdiss 150 mW Tj 125 °C VISO 5300 VRMS VIORM 890 VP COUPLER Isolation test voltage (RMS) t=1s Isolation voltage Total power dissipation Ptot 250 mW Operating ambient temperature range Tamb - 55 to + 100 °C Storage temperature range Tstg - 55 to + 150 °C Tsld 260 °C Soldering temperature (2) 2 mm from case, t ≤ 10 s Notes (1) Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to wave profile for soldering conditions for through hole devices (DIP). ELECTRICAL CHARACTERISTCS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL IF = ± 50 mA VR = 0 V, f = 1 MHz MIN. TYP. MAX. VF 1.25 1.6 Cj 50 UNIT INPUT Forward voltage Junction capacitance V pF OUTPUT Collector emitter voltage IC = 100 μA VCEO 70 V Emitter collector voltage IE = 100 μA VECO 7 V VCE = 20 V, IF = 0, E = 0 ICEO 100 nA Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat 0.3 V Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 Ω fc 100 kHz f = 1 MHz Ck 0.3 pF Collector dark current COUPLER Coupling capacitance Note • Minimum and maximum values were tested requirements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 83538 Rev. 1.9, 10-Dec-10 TCET1600, TCET1600G Optocoupler, Phototransistor Output, Vishay Semiconductors AC Input CURRENT TRANSFER RATIO PARAMETER IC/IF TEST CONDITION SYMBOL MIN. VCE = 5 V, IF = ± 5 mA CTR 20 TYP. MAX. UNIT 300 % MAX. UNIT IF 275 mA Pdiss 400 mW VIOTM 10 kV Tsi 175 °C MAXIMUM SAFETY RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. INPUT Forward current OUTPUT Power dissipation COUPLER Rated impulse voltage Safety temperature Note • According to DIN EN 60747-5-2 (VDE 0884) (see figure 1). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. INSULATION RATED PARAMETERS PARAMETER TEST CONDITION SYMBOL MIN. Partial discharge test voltage routine test 100 %, ttest = 1 s Vpd 1.669 Partial discharge test voltage lot test (sample test) tTr = 60 s, ttest = 10 s, (see figure 2) VIOTM 10 kV Vpd 1.424 kV VIO = 500 V RIO 1012 Ω RIO 1011 Ω RIO 109 Ω VIO = 500 V, Tamb = 100 °C Ptot - Total Power Dissipation (mW) Insulation resistance MAX. UNIT kV VIOTM 450 t1, t2 t3 , t4 ttest tstres 400 Phototransistor Psi (mW) 350 300 = 1 to 10 s =1s = 10 s = 12 s VPd 250 VIOWM VIORM 200 IR-diode Isi (mA) 150 100 50 0 t3 ttest t4 0 0 22441 VIO = 500 V, Tamb = 150 °C (construction test only) TYP. 25 50 75 100 125 150 175 13930 t1 tTr = 60 s Tsi - Safety Temperature (°C) Fig. 1 - Derating Diagram Document Number: 83538 Rev. 1.9, 10-Dec-10 t2 t stres t Fig. 2 - Test Pulse Diagram for Sample Test acc. to DIN EN 60747-5-2 (VDE 0884); IEC60747-5-5 For technical questions, contact: [email protected] www.vishay.com 3 TCET1600, TCET1600G Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Delay time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) td 3 μs Rise time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) tr 3 μs Turn-on time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) ton 6 μs Storage time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) ts 0.3 μs Fall time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) tf 4.7 μs Turn-off time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) toff 5 μs Turn-on time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4) ton 9 μs Turn-off time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4) toff 10 μs IF IF 0 +5V IF 0 IC = 2 mA; adjusted through input amplitude RG = 50 Ω tp = 0.01 T tp = 50 µs 50 Ω 100 Ω IF = 10 mA tr td ts t on tp td tr t on (= td + tr) Fig. 3 - Test Circuit, Non-Saturated Operation IF 100 % 90 % Oscilloscope RL > 1 MΩ CL < 20 pF 13343 0 t 10 % 0 Channel I Channel II tp IC Pulse duration Delay time Rise time Turn-on time tf t off ts tf t off (= ts + tf) t Storage time Fall time Turn-off time 96 11698 Fig. 5 - Switching Times +5V IC RG = 50 tp = 0.01 T tp = 50 µs Channel I Channel II 50 Oscilloscope RL > 1 M CL < 20 pF 1k 13344 Fig. 4 - Test Circuit, Saturated Operation www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 83538 Rev. 1.9, 10-Dec-10 TCET1600, TCET1600G Optocoupler, Phototransistor Output, Vishay Semiconductors AC Input Ptot - Total Power Dissipation (mW) TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 300 10 000 250 200 Phototransistor 150 IR-diode 100 IF = 0 mA ICE0 - Leakage Current (nA) Coupled device 50 1000 100 40 80 0.01 0.001 - 60 - 40 - 20 40 60 80 100 30 IC - Collector Current (mA) VF - Forward Voltage (V) 20 Fig. 9 - Leakage Current vs. Ambient Temperature 1.8 1.6 Tamb = 0 °C Tamb = - 40 °C 1.4 Tamb = - 55 °C 1.2 Tamb = 25 °C Tamb = 50 °C Tamb = 75 °C 1.0 0.8 Tamb = 100 °C 25 IF = 25 mA 20 IF = 10 mA 15 10 IF = 5 mA 5 IF = 1 mA IF = 2 mA 0 0.6 0.1 1 10 0 100 IF - Forward Current (mA) 22462 22464 Fig. 7 - Forward Current vs. Forward Voltage 0.1 0.2 0.3 0.4 VCE - Collector Emitter Voltage (sat) (V) Fig. 10 - Collector Current vs. Collector Emitter Voltage (sat) 50 1.4 45 NCTR - Normalized CTR (NS) IC - Collector Current (mA) 0 Tamb - Ambient Temperature (°C) 22465 Fig. 6 - Total Power Dissipation vs. Ambient Temperature IF = 30 mA 40 IF = 20 mA 35 30 IF = 15 mA 25 IF = 10 mA 20 15 IF = 5 mA 10 5 1.2 0 1 2 3 4 5 6 7 IF = 5 mA 0.8 0.6 Fig. 8 - Collector Current vs. Collector Emitter Voltage (NS) Document Number: 83538 Rev. 1.9, 10-Dec-10 IF = 1 mA 0.4 0.2 0 - 60 - 40 - 20 8 VCE - Collector Emitter Voltage (NS) (V) VCE = 5 V IF = 10 mA 1.0 0 22463 VCE = 12 V 0.1 120 Tamb - Ambient Temperature (°C) 96 11700 VCE = 24V 1 0 0 VCE = 40 V 10 22466 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 11 - Normalized CTR (NS) vs. Ambient Temperature For technical questions, contact: [email protected] www.vishay.com 5 TCET1600, TCET1600G Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input 0 VCE = 0.4 V IF = 5 mA - 40 IF = 10 mA 0.8 0.6 IF = 1 mA 0.4 VCE = 5 V - 20 1.0 Phase (deg) NCTR - Normalized CTR (sat) 1.2 - 60 - 80 - 100 - 120 0.2 - 140 0 - 60 - 40 - 20 - 160 0 20 40 60 80 100 1 10 Fig. 12 - Normalized CTR (sat) vs. Ambient Temperature 1000 VCE = 5 V VCC = 5 V Tamb = 0 °C 1.2 Tamb = - 40 °C 1.0 Tamb = - 55 °C 0.8 0.6 Tamb = 25 °C 0.4 100 10 Tamb = 50 °C Tamb = 75 °C 0.2 Tamb = 100 °C 1 0.0 0.1 1 10 0.1 100 IF - Forward Current (mA) 22468 Tamb = 0 °C Tamb = - 40 °C 0.8 T = - 55 °C amb 0.6 Tamb = 25 °C 0.4 Tamb = 50 °C 0.2 Tamb = 75 °C Tamb = 100 °C 0.0 100 1000 ton, toff - Switching Time (μs) VCE = 0.4 V 10 IC (mA) Fig. 16 - FCTR vs. IC 1.2 1.0 1 22471 Fig. 13 - Normalized CTR (NS) vs. Forward Current NCTR - Normalized CTR (sat) 1000 Fig. 15 - FCTR vs. Phase Angle FCTR (kHz) NCTR - Normalized CTR (NS) 1.4 100 f (kHz) 22470 Tamb - Ambient Temperature (°C) 22467 VCE = 5 V, IF = 10 mA 100 toff (μs) 10 ton (μs) 1 0.1 0.1 22469 1 10 100 IF - Forward Current (mA) Fig. 14 - Normalized CTR (sat) vs. Forward Current www.vishay.com 6 0 22472 5 10 15 20 RL - Load Resistance (kΩ) Fig. 17 - Switching Time vs. Load Resistance For technical questions, contact: [email protected] Document Number: 83538 Rev. 1.9, 10-Dec-10 TCET1600, TCET1600G Optocoupler, Phototransistor Output, Vishay Semiconductors AC Input PACKAGE DIMENSIONS in millimeters 2 1 Pin one ID 6.48 6.81 ISO method A 3 4 4.55 4.83 7.62 typ. 0.79 typ. 0.76 1.14 1.27 typ. 3.30 3.81 i178027 5.84 6.35 10° 4° typ. 2.79 3.30 0.508 0.89 0.46 0.56 0° to 15° 0.2 0.3 1.27 2.54 Option 6 7.62 typ. 3.5 ± 0.3 0.1 min. 2.55 ± 0.25 20802-13 10.16 typ. PACKAGE MARKING (example) TCET1600 V YWW H 68 21764-93 Document Number: 83538 Rev. 1.9, 10-Dec-10 For technical questions, contact: [email protected] www.vishay.com 7 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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