SFH640 www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection, 300 V BVCEO FEATURES • Good CTR linearity with forward current A 1 6 B C 2 5 C • Very high collector emitter breakdown voltage, BVCER = 300 V NC 3 4 E • Isolation test voltage: 5300 VRMS • Low CTR degradation • Low coupling capacitance • High common mode transient immunity i179004-3 • Phototransistor optocoupler 6 pin DIP package with base connection DESCRIPTION • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC The SFH640 is an optocoupler with very high BVCER, a minimum of 300 V. It is intended for telecommunications applications or any DC application requiring a high blocking voltage. AGENCY APPROVALS • UL1577, file no. E52744 system code H or J, double protection • DIN EN 60747-5-2 (VDE 0884) available with option 1 • CSA 93751 • BSI IEC 60950; IEC 60065 ORDERING INFORMATION DIP S F H 6 4 PART NUMBER 0 - # X CTR BIN 0 # # PACKAGE OPTION T TAPE AND REEL 7.62 mm Option 7 > 0.7 mm DIP-6 SMD-6, option 7 VDE, UL, CSA, BSI SMD-6, option 9 > 0.1 mm CTR (%) AGENCY CERTIFIED/PACKAGE UL, CSA, BSI Option 9 10 mA 63 to 125 100 to 200 SFH640-2 SFH640-3 SFH640-2X007 SFH640-3X007T (1) 63 to 125 100 to 200 - SFH640-3X019T (1) Notes • Additional options may be possible, please contact sales office. (1) Also available in tubes, do not put T on the end. ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 6.0 V DC forward current IF 60 mA INPUT Surge forward current Total power dissipation Rev. 1.5, 08-Sep-11 tp 10 μs IFSM 2.5 A Pdiss 100 mW Document Number: 83682 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SFH640 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT V OUTPUT Collector emitter voltage VCEO 300 Collector base voltage VCBO 300 V Emitter base voltage VEBO 7.0 V IC 50 mA IC 100 mA Pdiss 300 mW 5300 VRMS 7500 VPK RIO 1012 RIO 1011 0.4 mm Creepage distance 7 mm Clearance distance 7 mm Collector current tp 10 ms Surge collector current Total power dissipation COUPLER Isolation test voltage between emitter and detector VISO VIO = 500 V, Tamb = 25 °C Isolation resistance VIO = 500 V, Tamb = 100 °C Insulation thickness between emitter and detector Comparative tracking index per DIN IEC 112/VDE 0303, part 1 CTI 175 Storage temperature range Tstg - 55 to + 150 °C Operating temperature range Tamb - 55 to + 100 °C Tsld 260 °C Soldering temperature (1) max. 10 s, dip soldering: distance to seating plane 1.5 mm Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT 1.1 1.5 V 0.01 10 μA INPUT Forward voltage IF = 10 mA VV Reverse voltage IR = 10 μA VR Reverse current VR = 6 V IR Capacitance VF = 0 V, f = 1 MHz Thermal resistance 6 V CO 25 pF Rthja 750 K/W OUTPUT Collector emitter breakdown voltage Voltage emitter base ICE = 1 mA, RBE = 1 M BVCER 300 7 IEB = 10 μA BVBEO Collector emitter capacitance VCE = 10 V, f = 1 MHz CCE Collector base capacitance VCB = 10 V, f = 1 MHz VEB = 5 V, f = 1 MHz Emitter base capacitance Thermal resistance V V 7 pF CCB 8 pF CEB 38 pF Rthja 250 K/W COUPLER Coupling capacitance Saturation voltage collector emitter Collector emitter leakage current CC 0.6 IF = 10 mA, IC = 3.2 mA SFH640-2 VCEsat 0.25 0.4 V IF = 10 mA, IC = 5 mA SFH640-3 VCEsat 0.25 0.4 V ICER 1 100 nA VCE = 200 V, RBE = 1 M pF Note • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Rev. 1.5, 08-Sep-11 Document Number: 83682 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SFH640 www.vishay.com Vishay Semiconductors CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified) PARAMETER Current transfer ratio TEST CONDITION PART SYMBOL MIN. IF = 10 mA, VCE = 10 V SFH640-2 IC/IF 63 IF = 1 mA, VCE = 10 V SFH640-2 IC/IF 22 IF = 10 mA, VCE = 10 V SFH640-3 IC/IF 100 IF = 1 mA, VCE = 10 V SFH640-3 IC/IF 34 TYP. MAX. UNIT 125 % 200 % 45 % 70 % SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Turn-on time IC = 2 mA, RL = 100 , VCC = 10 V ton MIN. TYP. 5 MAX. UNIT Rise time IC = 2 mA, RL = 100 , VCC = 10 V tr 2.5 μs Turn-off time IC = 2 mA, RL = 100 , VCC = 10 V toff 6 μs Fall time IC = 2 mA, RL = 100 , VCC = 10 V tf 5.5 μs μs TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 100 80 RL IF V CC 60 NCTR IC VCE = 10 V1 normalized to IF = 10 mA, NCTR = f (IF) 50 30 47 Ω 10 0 10-4 isfh640_01a 10-3 IF/A 10-2 10-1 isfh640_02 Fig. 1 - Switching Times Measurement Test Circuit and Waveform Fig. 3 - Current Transfer Ratio (typ.) 1.2 VF = f (IF, TA) V Input pulse 25 ºC 50 ºC 75 ºC I/F 1.1 10 % Output pulse 90 % 1.0 tr t on tf t off isfh640_01b 0.9 10-1 5 100 5 101 IF 5mA 102 isfh640_03 Fig. 2 - Switching Times Measurement Test Circuit and Waveform Rev. 1.5, 08-Sep-11 Fig. 4 - Diode Forward Voltage (typ.) Document Number: 83682 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SFH640 www.vishay.com Vishay Semiconductors 10-6 20 ICE = f(VCE, IB) 17.5 15 /B = 100 µA /B = 80 µA 10 7.5 /B = 60 µA 5 /B = 40 µA 2.5 isfh640_04 100 102 10-9 10-10 10-11 /B = 20 µA 10-1 VCE/V 10-8 Ptot/mW ICE/mA 12.5 0 10-2 101 10-12 0 90 20 70 /F = 20mA 60 15 /F = 16mA 10 /F = 14mA 5 /F = 12mA 100 101 40 30 20 10 /F = 10mA 10-1 VCE/V 50 0 102 0 100 90 80 CEB Fig. 9 - Permissible Loss Diode 400 f = 1.0 MHz, ICE = f(VCE) CCB = f(VCB), CEB = f(VEB) 350 60 50 40 CCB 30 isfh640_06 250 200 Transistor 150 100 CCE 10-1 100 VXX/V 50 101 Fig. 7 - Transistor Capacitances (typ.) Rev. 1.5, 08-Sep-11 PIOT = f (TA) 300 Ptot/mW CXX/pF 70 10 20 30 40 50 60 70 80 90 100 TA/º C isfh640_08 Fig. 6 - Output Characteristics (typ.) 0 10-2 IF = f (TA) 80 IF/mA ICE/mA 25 10 75 100 125 150 175 200 VCE/V 100 ICE = f(VCE, IF) 20 50 Fig. 8 - Collector-Emitter Leakage Current (typ.) 30 isfh640_05 25 isfh640_07 Fig. 5 - Output Characteristics (typ.) 0 10-2 IF = 0, RBE = 1.0 MW, ICER = f(VCE) 10-7 102 0 0 Diode 10 20 30 40 50 60 70 80 90 100 TA/º C isfh640_09 Fig. 10 - Permissible Power Dissipation Document Number: 83682 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SFH640 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 3 2 1 4 5 6 Pin one ID 6.4 ± 0.1 ISO method A 8.6 ± 0.1 7.62 typ. 1.2 ± 0.1 1 min. 3.555 ± 0.255 18° 4° typ. 2.95 ± 0.5 0.8 min. 0.85 ± 0.05 0.25 typ. 3° to 9° 0.5 ± 0.05 7.62 to 8.81 i178004 2.54 typ. Option 7 Option 9 7.62 typ. 9.53 10.03 7.62 ref. 0.7 4.6 4.1 0.102 0.249 0.30 typ. 8 min. 0.51 1.02 8.4 min. 15° max. 8 min. 10.3 max. 0.76 0.76 2.54 R0.25 2.54 R0.25 1.78 8 min. 11.05 Rev. 1.5, 08-Sep-11 1.52 1.78 8 min. 11.05 1.52 18494-2 Document Number: 83682 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DIP-6A www.vishay.com Vishay Semiconductors DIP-6A PACKAGE DIMENSIONS in inches (millimeters) 3 2 1 4 5 6 Pin one ID 6.4 ± 0.1 ISO method A 8.6 ± 0.1 1 min. 7.62 typ. 1.2 ± 0.1 3.555 ± 0.255 18° 4° typ. 2.95 ± 0.5 0.8 min. 0.85 ± 0.05 0.5 ± 0.05 3° to 9° 0.25 typ. 7.62 to 8.81 i178004 2.54 typ. Note The information in this document provides generic information but for specific information on a product the appropriate product datasheet should be used. Rev. 1.2, 24-Aug-15 Document Number: 83263 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000