VISHAY SFH640-3

SFH640
Vishay Semiconductors
Optocoupler, Phototransistor Output,
with Base Connection, 300 V BVCEO
FEATURES
• Good CTR linearity with forward current
6 B
A
1
C
2
5 C
NC
3
4 E
• Low CTR degradation
• Very high collector emitter breakdown voltage,
BVCER = 300 V
• Isolation test voltage: 5300 VRMS
• Low coupling capacitance
• High common mode transient immunity
i179004
• Phototransistor optocoupler 6 pin DIP package with base
connection
DESCRIPTION
• Lead (Pb)-free component
The SFH 640 is an optocoupler with very high BVCER, a
minimum of 300 V. It is intended for telecommunications
applications or any DC application requiring a high blocking
voltage.
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
AGENCY APPROVALS
• UL1577, file no. E52744 system code H or J, double
protection
• DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending
available with option 1
• CSA 93751
• BSI IEC 60950; IEC 60065
ORDER INFORMATION
PART
REMARKS
SFH640-1
CTR 40 to 80 %, DIP-6
SFH640-2
CTR 63 to 125 %, DIP-6
SFH640-3
CTR 100 to 200 %, DIP-6
SFH640-2X007
CTR 63 to 125 %, SMD-6 (option 7)
SFH640-3X007
CTR 100 to 200 %, SMD-6 (option 7)
SFH640-3X009
CTR 100 to 200 %, SMD-6 (option 9)
Note
For additional information on the available options refer to option information.
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Reverse voltage
VR
6.0
V
DC forward current
IF
60
mA
IFSM
2.5
A
Pdiss
100
mW
INPUT
Surge forward current
tp ≤ 10 µs
Total power dissipation
OUTPUT
Collector emitter voltage
VCE
300
V
Collector base voltage
VCBO
300
V
Emitter base voltage
VEBO
7.0
V
IC
50
mA
IC
100
mA
Pdiss
300
mW
Collector current
Surge collector current
Total power dissipation
Document Number: 83682
Rev. 1.3, 01-Dec-05
tp ≤ 10 ms
For technical questions, contact: [email protected]
www.vishay.com
1
SFH640
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection, 300 V BVCEO
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
VISO
5300/7500
VRMS/VPK
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Ω
≥ 0.4
mm
Creepage distance
≥7
mm
Clearance distance
≥7
mm
COUPLER
Isolation test voltage
between emitter and detector, refer to
climate DIN 40046, part 2, Nov. 74
Isolation resistance
Insulation thickness between emitter
and detector
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
CTI
175
Storage temperature range
Tstg
- 55 to + 150
°C
Operating temperature range
Tamb
- 55 to + 100
°C
Tsld
260
°C
Soldering temperature (2)
max. 10 s, dip soldering:
distance to seating plane ≥ 1.5 mm
Notes
(1) T
amb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
1.1
1.5
UNIT
INPUT
Forward voltage
IF = 10 mA
VV
Reverse voltage
IR = 10 µA
VR
Reverse current
Capacitance
6.0
V
V
VR = 6.0 V
IR
0.01
VF = 0 V, f = 1.0 MHz
CO
25
pF
Rthja
750
K/W
Thermal resistance
10
µA
OUTPUT
Collector emitter breakdown
voltage
Voltage emitter base
ICE = 1.0 mA,
RBE = 1.0 MΩ
BVCER
300
7.0
V
IEB = 10 µA
BVBEO
Collector emitter capacitance
VCE = 10 V, f = 1.0 MHz
CCE
7.0
pF
Collector base capacitance
VCB = 10 V, f = 1.0 MHz
CCB
8.0
pF
Emitter base capacitance
VEB = 5.0 V, f = 1.0 MHz
Thermal resistance
V
CEB
38
pF
Rthja
250
K/W
COUPLER
Coupling capacitance
Saturation voltage collector
emitter
Collector emitter leakage
current
CC
0.6
IF = 10 mA, IC = 2.0 mA
SFH640-1
VCEsat
0.25
0.4
V
IF = 10 mA, IC = 3.2 mA
SFH640-2
VCEsat
0.25
0.4
V
IF = 10 mA, IC = 5.0 mA
SFH640-3
VCEsat
0.25
0.4
V
ICER
1.0
100
nA
VCE = 200 V,
RBE = 1.0 MΩ
pF
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
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For technical questions, contact: [email protected]
Document Number: 83682
Rev. 1.3, 01-Dec-05
SFH640
Optocoupler, Phototransistor Output, Vishay Semiconductors
with Base Connection, 300 V BVCEO
CURRENT TRANSFER RATIO
PARAMETER
Current transfer ratio
TEST CONDITION
PART
SYMBOL
MIN.
IF = 10 mA, VCE = 10 V
SFH640-1
IC/IF
40
TYP.
IF = 1.0 mA, VCE = 10 V
SFH640-1
IC/IF
13
IF = 10 mA, VCE = 10 V
SFH640-2
IC/IF
63
IF = 1.0 mA, VCE = 10 V
SFH640-2
IC/IF
22
IF = 10 mA, VCE = 10 V
SFH640-3
IC/IF
100
IF = 1.0 mA, VCE = 10 V
SFH640-3
IC/IF
34
70
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
80
%
30
%
125
%
45
%
200
%
%
SWITCHING CHARACTERISTICS
PARAMETER
MAX.
UNIT
Turn-on time
IC = 2.0 mA, RL = 100 Ω, VCC = 10 V
ton
5.0
µs
Rise time
IC = 2.0 mA, RL = 100 Ω, VCC = 10 V
tr
2.5
µs
Turn-off time
IC = 2.0 mA, RL = 100 Ω, VCC = 10 V
toff
6.0
µs
Fall time
IC = 2.0 mA, RL = 100 Ω, VCC = 10 V
tf
5.5
µs
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
100
80
VCC
IC
NCTR
60
RL
IF
VCE = 10 V1
normalized to
IF = 10 mA,
NCTR = f (IF)
50
30
10
47 Ω
0
10-4
10-3
IF/A
10-2
10-1
isfh640_02
isfh640_01a
Fig. 1 - Switching Times Measurement Test Circuit and Waveform
Fig. 3 - Current Transfer Ratio (Typ.)
1.2
VF = f (IF, TA)
V
25 ºC
50 ºC
75 ºC
I/F
Input Pulse
1.1
10%
Output Pulse
90%
tr
ton
tf
t off
0.9
10-1
5
100
5
101
IF
5mA 102
isfh640_03
isfh640_01b
Fig. 2 - Switching Times Measurement Test Circuit and Waveform
Document Number: 83682
Rev. 1.3, 01-Dec-05
1.0
Fig. 4 - Diode Forward Voltage (Ttyp.)
For technical questions, contact: [email protected]
www.vishay.com
3
SFH640
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection, 300 V BVCEO
10-6
20
ICE = f(VCE, IB)
17.5
15
/B = 100 µA
/B = 80 µA
10
7.5
/B = 60 µA
5
/B = 40 µA
2.5
isfh640_04
100
102
10-9
10-10
10-11
/B = 20 µA
10-1
VCE/V
10-8
Ptot/mW
ICE/mA
12.5
0
10-2
101
10-12
0
90
20
70
/F = 20mA
60
15
/F = 16mA
10
/F = 14mA
5
/F = 12mA
100
101
40
30
20
10
/F = 10mA
10-1
VCE/V
50
0
102
100
CEB
400
300
60
50
40
CCB
30
isfh640_06
250
200
Transistor
150
100
CCE
50
10-1
100
VXX/V
101
Fig. 7 - Transistor Capacitances (Typ.)
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PIOT = f (TA)
350
Ptot/mW
CXX/pF
70
10 20 30 40 50 60 70 80 90 100
TA/º C
Fig. 9 - Permissible Loss Diode
f = 1.0 MHz,
ICE = f(VCE)
CCB = f(VCB),
CEB = f(VEB)
90
80
0
isfh640_08
Fig. 6 - Output Characteristics (Typ.)
0
10-2
IF = f (TA)
80
IF/mA
ICE/mA
25
10
75 100 125 150 175 200
VCE/V
100
ICE = f(VCE, IF)
20
50
Fig. 8 - Collector-Emitter Leakage Current (Typ.)
30
isfh640_05
25
isfh640_07
Fig. 5 - Output Characteristics (Typ.)
0
10-2
IF = 0, RBE = 1.0 MW,
ICER = f(VCE)
10-7
102
0
0
Diode
10 20 30 40 50 60 70 80 90 100
TA/º C
isfh640_09
Fig. 10 - Permissible Power Dissipation
For technical questions, contact: [email protected]
Document Number: 83682
Rev. 1.3, 01-Dec-05
SFH640
Optocoupler, Phototransistor Output, Vishay Semiconductors
with Base Connection, 300 V BVCEO
PACKAGE DIMENSIONS in inches (millimeters)
3
2
1
4
5
6
Pin one ID
0.248 (6.30)
0.256 (6.50)
ISO method A
0.335 (8.50)
0.343 (8.70)
0.300 (7.62)
(0.45)
0.048
0.039
(1.00)
min.
typ.
0.022 (0.55)
0.130 (3.30)
0.150 (3.81)
18 °
4°
typ.
0.114 (2.90)
0.031 (0.80) min.
0.031 (0.80)
0.018 (0.45)
0.035 (0.90)
0.022 (0.55)
0.100 (2.54) typ.
0.130 (3.0)
3° to 9°
0.010 (0.25)
typ.
0.300 to 0.347
(7.62 to 8.81)
i178004
Option 7
Option 9
0.375 (9.53)
0.395 (10.03)
0.300 (7.62)
typ.
0.300 (7.62)
ref.
0.028 (0.7)
min.
0.180 (4.6)
0.160 (4.1)
0.315 (8.0)
min.
0.331 (8.4)
min.
0.406 (10.3)
max.
Document Number: 83682
Rev. 1.3, 01-Dec-05
0.0040 (0.102)
0.0098 (0.249)
0.012 (0.30) typ.
0.020 (0.51)
0.040 (1.02)
0.315 (8.00)
min.
15° max.
For technical questions, contact: [email protected]
18494
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5
SFH640
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection, 300 V BVCEO
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with
respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use
within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in
the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively.
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency
(EPA) in the USA.
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do
not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the
customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall
indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any
claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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For technical questions, contact: [email protected]
Document Number: 83682
Rev. 1.3, 01-Dec-05
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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