DMTH4004SPSQ

DMTH4004SPSQ
Green
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
®
PowerDI
Product Summary
Features
BVDSS
RDS(ON) Max
Qg Typ
ID
TC = +25°C
40V
2.7mΩ @ VGS = 10V
68.6nC
100A

Rated to +175°C – Ideal for High Ambient Temperature
Environments
100% Unclamped Inductive Switching – Ensures More Reliable
and Robust End Application
Low RDS(ON) – Minimizes Power Losses
Low Qg – Minimizes Switching Losses
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)







Description and Applications
Mechanical Data
This MOSFET is designed to meet the stringent requirements of
automotive applications. It is qualified to AECQ101, supported by a
PPAP and is ideal for use in:

Case: PowerDI 5060-8

Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)

Engine Management Systems

Body Control Electronics

DC-DC Converters
®



PowerDI5060-8
Pin1
Top View
Internal Schematic
Bottom View
S
D
S
D
S
D
G
D
Top View
Pin Configuration
Ordering Information (Note 5)
Part Number
DMTH4004SPSQ-13
Notes:
Case
PowerDI5060-8
Packaging
2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
D
D
D
D
= Manufacturer’s Marking
T4004SS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 14 = 2014)
WW = Week (01 - 53)
T4004SS
YY WW
PowerDI is a registered trademark of Diodes Incorporated.
DMTH4004SPSQ
Document number: DS37562 Rev. 3 - 2
S
S
S
G
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October 2015
© Diodes Incorporated
DMTH4004SPSQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
TA = +25°C
TA = +70°C
TC = +25°C
TC = +100°C
(Note 9)
Continuous Drain Current (Note 6)
Continuous Drain Current (Note 7)
Value
40
±20
31
26
100
ID
ID
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current, L=0.2mH
Avalanche Energy, L=0.2mH
Units
V
V
A
A
100
IS
IDM
IAS
EAS
100
200
45
200
A
A
A
mJ
Symbol
PD
RθJA
PD
RθJC
TJ, TSTG
Value
3.6
41
167
0.9
-55 to +175
Units
W
°C/W
W
°C/W
°C
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
Electrical Characteristics
Notes:
TC = +25°C
(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
TA = +25°C
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
40
—
—
—
—
—
—
1
±100
V
μA
nA
VGS = 0V, ID = 1mA
VDS = 32V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(th)
RDS(ON)
VSD
2
—
—
—
2.3
0.9
4
2.7
1.2
V
mΩ
V
VDS = VGS, ID = 250μA
VGS = 10V, ID = 90A
VGS = 0V, IS = 20A
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
—
—
—
—
—
—
—
—
—
—
—
—
4,305
1,441
102
0.77
68.6
16.8
14.2
9.5
6.7
26.4
8.1
52.4
—
—
—
—
—
—
—
—
—
—
—
—
pF
VDS = 25V, VGS = 0V,
f = 1MHz
Ω
VDS = 0V, VGS = 0V, f = 1MHz
nC
VDD = 20V, ID = 90A,
VGS = 10V
nS
VDD = 20V, VGS = 10V,
ID = 90A, RG = 3.5Ω
QRR
—
78.2
—
nS
nC
Test Condition
IF = 50A, di/dt = 100A/μs
6. Device mounted with exposed drain pad on 25mm by 25mm 2oz copper on a single- sided 1.6mm FR4 PCB; device is measured under still air conditions
whilst operating in a steady state.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
DMTH4004SPSQ
Document number: DS37562 Rev. 3 - 2
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October 2015
© Diodes Incorporated
DMTH4004SPSQ
150
VGS = 10.0V
30
VGS = 6.0V
25
120
VGS = 5.0V
T A = 175°C
I D, DRAIN CURRENT (A)
ID , DRAIN CURRENT (A)
VDS = 5.0V
90
VGS = 4.5V
60
30
20
T A = 150°C
5
T A = 25°C
VGS = 3.5V
0.5
1
1.5
2
2.5
VDS , DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
2.60
2.50
VGS = 10V
2.40
2.30
2.20
2.10
2.00
10
30
50 70 90 110 130 150 170 190 210
ID , DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
T A = -55°C
0
0
3
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mR)
0
0
1
2
3
4
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
5
15
12
0.006
9
6
I D = 100A
3
0
2
4
6
8
10 12 14 16 18
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
20
2.2
VGS = 10V
2
0.005
T A = 175°C
R DS(ON), DRAIN-SOURCE
O N-RESI STANCE (NORMALIZED)
RD S(ON ), DRAIN-SOURCE ON-RESISTANCE ( )
TA = 85°C
10
VGS = 4.0V
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( )
T A = 125°C
15
T A = 150°C
T A = 125°C
0.004
T A = 85°C
0.003
T A = 25°C
T A = -55°C
0.002
0.001
0
10
30
50
70
90
110
130
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
DMTH4004SPSQ
Document number: DS37562 Rev. 3 - 2
150
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1.8
1.6
1.4
VGS = 10V
1.2
ID = 90A
1
0.8
0.6
0.4
-50
-25
0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
October 2015
© Diodes Incorporated
DMTH4004SPSQ
4
V GS(TH), GATE THRESHOLD VOLTAGE (V)
R DS(on ), DRAIN-SOURCE ON-RESISTANCE ()
0.005
VGS = 10V
0.004
I D = 100A
0.003
0.002
0.001
0
-50
3.5
3
I D = 1mA
2.5
2
I D = 250µA
1.5
1
0.5
0
-50
-25
0
25 50
75 100 125 150 175
TJ, JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
-25
10000
150
0
25 50
75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs.
Temperature
Ciss
CT , JUNCTION CAPACITANCE (pF)
T A= 175°C
IS, SOURCE CURRENT (A)
120
T A= 150°C
90
T A= 125°C
25°C
60
TA = 85°C
25°C
TA = 25°C
30
Coss
1000
C rss
100
f=1MHz
TA = -55°C
25°C
0
0
0.3
0.6
0.9
1.2
VSD , SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
10
1.5
10
0
5
10
15
20
25
30
35
V DS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
40
1000
8
ID, DRAIN CURRENT (A)
V GS GATE THRESHOLD VOLTAGE (V)
RDS(on)
Limited
VDS = 20V
6
I D = 90A
4
2
00
PW = 100µs
100
DC
PW = 100ms
PW = 10ms
10
1
PW = 1ms
TJ(m ax) = 175°C
TC = 25°C
V GS = 10V
Single Pulse
DUT on Infinite Heatsink
10
20
30
40
50
60
70
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
DMTH4004SPSQ
Document number: DS37562 Rev. 3 - 2
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0.1
0.1
1
10
V DS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
October 2015
© Diodes Incorporated
DMTH4004SPSQ
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1 D =
0.1
D = 0.05
D = 0.02
0.01 D =
0.01
D = 0.005
Rthjc (t) = r(t) * Rthjc
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
Rthjc = 0.9°C/W
Duty Cycle, D = t1/ t2
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
DMTH4004SPSQ
Document number: DS37562 Rev. 3 - 2
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October 2015
© Diodes Incorporated
DMTH4004SPSQ
Package Outline
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
PowerDI5060-8
D
Detail A
D1
0(4X)
c
A1
E1 E
e
01 (4X)
1
b (8X)
e/2
1
L
b2 (4X)
D3
A
K
D2
E3 E2
M
b3 (4X)
M1
Detail A
L1
G
PowerDI5060-8
Dim
Min
Max
Typ
A
0.90
1.10
1.00
A1
0.00
0.05
—
b
0.33
0.51
0.41
b2
0.200
0.350 0.273
b3
0.40
0.80
0.60
c
0.230
0.330 0.277
D
5.15 BSC
D1
4.70
5.10
4.90
D2
3.70
4.10
3.90
D3
3.90
4.30
4.10
E
6.15 BSC
E1
5.60
6.00
5.80
E2
3.28
3.68
3.48
E3
3.99
4.39
4.19
e
1.27 BSC
G
0.51
0.71
0.61
K
0.51
—
—
L
0.51
0.71
0.61
L1
0.100
0.200 0.175
M
3.235
4.035 3.635
M1
1.00
1.40
1.21
θ
10°
12°
11°
θ1
6°
8°
7°
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
PowerDI5060-8
X4
Y2
X3
Y3
Y5
Y1
X2
Y4
X1
Y7
Y6
G1
C
X
DMTH4004SPSQ
Document number: DS37562 Rev. 3 - 2
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Y(4x)
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Dimensions
C
G
G1
X
X1
X2
X3
X4
Y
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Value (in mm)
1.270
0.660
0.820
0.610
4.100
0.755
4.420
5.610
1.270
0.600
1.020
0.295
1.825
3.810
0.180
6.610
October 2015
© Diodes Incorporated
DMTH4004SPSQ
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
www.diodes.com
DMTH4004SPSQ
Document number: DS37562 Rev. 3 - 2
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October 2015
© Diodes Incorporated
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