AR30N60

AR30N60
ACTIVE / SYNCHRONOUS RECTIFIER
Description
Pin Assignments
The AR30N60 is a high-performance Active/Synchronous Rectifier
used for secondary-side synchronous rectification with the output
voltage at less than 10V.
(Top View)
By integrating MOSFET and controller, the AR30N60 emulates the
characteristics of a near-ideal diode rectifier. The combination not only
reduces the energy consumption of the secondary-side synchronous
rectifier, it also improves the power dissipation of the sub-system on
the primary side.
The SYNC feature allows the embedded MOSFET of the AR30N60 to
immediately turn OFF as soon as the primary-side switch turns ON,
preventing the unfavorable reverse condition of the synchronous
rectifier. The AR30N60 is ideally suited for AC/DC power converters
implemented in either the flyback or the LLC-resonant topology. For
the ease of use, the design of AR30N60 is flexible enough to facilitate
operation in one of the following modes: Discontinuous Conduction
(DCM), Continuous Conduction (CCM), Quasi Resonant (QR).
To further improve conversion efficiency and to ensure system
integrity, AR30N60 integrates many innovative features. These
include: light-load detection to reduce standby power consumption,
TON and TOFF/EN pins to prevent run-away ON-time due to the opencircuit or short-circuit fault conditions, SFB pin to provide overtemperature protection, low RDS(ON) of the embedded MOSFET, and
wide output voltage (VCC) range.
TON
1
22
TOFF/EN
2
21 GND
SFB
3
20
NC
4
19 SYNC
VS
5
18 NC
VS
6
17 VD
VS
7
VS
8
VS
9
14 VD
VS 10
13 VD
VS 11
12 VD
GND
VCC
NC
16 VD
VD
15 VD
V-DFN6040-22
Applications



Switched-mode power supply (SMPS) in consumer products (e.g.
FPTV), web servers, and storage servers
Power adapter and charger with either fixed or variable output
voltage (e.g. USB Type-C, PD, fast charging, …) in notebook PCs,
desktop PCs, All-In-One PCs, tablets, smartphones, and network
clients
Industrial and measuring equipment
The small footprint of the V-DFN6040-22 package makes it ideally
suited for space constrained applications.
Features








Secondary-side synchronous rectification
Low Turn-OFF threshold at -4mV
Wide operating temperature range from -40°C to +150°C
Supports DCM, CCM, and QR (Quasi-Resonant) operating
modes
Built-in fault handling mechanism to provide high level of system
stability: over-temperature (OTP) and over-voltage (OVP)
protectionunder-voltage lock-out (UVLO)
Light-load detection to reduce the standby power consumption
Totally Lead-free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. ”Green” Device (Note 3)
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated‟s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
AR30N60
Document number:DS37287 Rev.2 - 2
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AR30N60
Typical Application Circuit
Type-C
Connector
USB
Power
Switch
VCC
T1
N
VD
VCC
VS
GND
AR30N60
TON
TOFF/EN
SYNC
VBUS
RTON
Current
Sensor
CC1 & CC2
D+ & D-
L
RTOFF/EN
SFB
M1
Primary-side
Controller
Type-C
Controller
C2
Opto-coupler
Figure 1. USB Type-C Charger with Secondary-side Regulation (SSR)
AR30N60
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AR30N60
Pin Description
Pin Number
Pin Name
1
TON
2
TOFF/EN
3
4,18,20
5-11
12-17, VD Pad
SFB
NC
VS
VD
SYNC
19
21,GND Pad
22
Function
Minimum ON-time Control Input. The resistor, RTON, shall be connected between this pin and GND to create
a voltage reference for the circuit inside the device.
Minimum OFF-time / Enable Control Input. It combines the functions of setting the Minimum OFF-time as
well as chip enable. The resistor, RTOFF/EN, shall be connected between this pin and GND.
Secondary-side Feedback Output. It is connected to the internal resistor network for feedback purpose.
No Connection.
Embedded MOSFET Source Terminal Input. It shall be connected to GND.
Embedded MOSFET Drain Terminal Input. It shall be connected as close as possible to the transformer.
Synchronization Input. This must be connected, through a RC filter, to either the output of the gate driver to
the embedded MOSFET of the primary-side, or to the drain terminal of the MOSFET of the primary-side.
Ground Pin.
IC Supply Voltage Input. A ceramic capacitor of 10F shall be connected between this pin and GND.
GND
VCC
Functional Block Diagram
VCC
VD
SFB
AVDD
TOFF/EN
LDO
Enable Control
OFF Timer
UVLO
Vref
VD
OVP
Vref
General
Control Logic
& Exception
Handling
1.5V
VTHOFF
VTHON
Driver
ARM
VS
GATE
AVDD-2V
ON Timer
AVDD
TON
SYNC
GND
VS
Figure 2. Internal Functional Block Diagrams of AR30N60
AR30N60
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AR30N60
Absolute Maximum Ratings (@ TA = +25°C, unless otherwise specified.) (Note 4)
Symbol
VCC
VDS
VTOFF/EN, VTON
TMJ
TST
ESD
Note:
Parameter
Supply Voltage
Voltage Across Drain and Source
Voltage on TOFF/EN, TON Pins
Maximum Junction Temperature
Storage Temperature
Human Body Model, JESD22-A114
Machine Model, JESD22-A115-A
Charged Device Model, JESD22-C101
Ratings
-0.3 to 10.0
-1 to 60
-0.3 to 6.0
+150
-65 to +150
3.0
0.25
1.0
Unit
V
V
V
°C
°C
KV
4. These are stress ratings only. Operation outside the absolute maximum ratings may cause device failure. Operation at the absolute maximum rating for
extended periods may reduce device reliability.
Package Thermal Data (@ TA = +25°C, unless otherwise specified.)
Symbol
PD
θJA
θJC
Notes:
Parameter
Power Dissipation (Note 5)
Thermal Resistance, Junction-to-Ambient (Note 6)
Thermal Resistance, Junction-to-Case (Note 7)
Rating
2.39
52.2
2.3
Unit
W
°C/W
°C/W
5. Device mounted on FR-4 PCB, 2oz with minimum recommended pad layout.
6. Device mounted on 25mm x 25mm 2oz copper board.
7. Device mounted on 50mm x 50mm 2oz copper board.
Recommended Operating Conditions
Symbol
VCC
VDS
FSW
RTON
RTOFF/EN
TJ
Parameter
Supply Voltage Range
Voltage across Drain and Source
Switching Frequency
TON Resistor
TOFF/EN Resistor w/ SYNC
Operating Junction Temperature
AR30N60
Document number:DS37287 Rev.2 - 2
Min
3.5
-0.6
20
5
100
-40
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Max
9.0
60.0
600
125
125
+125
Unit
V
KHz
KΩ
°C
February 2016
© Diodes Incorporated
AR30N60
Electrical Characteristics
(@ TA = +25°C, unless otherwise specified.)
Min
Typ
Max
Unit
VAVDD
Internal Regulator Output
VCC = 5V
–
4.5
–
V
ICC_START
Supply Current (Under-voltage)
VCC = 2.6V
–
160
–
ICC_STANDBY
Supply Current (Disabled)
VCC = 5V, RTOFF/EN = 0Ω
–
380
500
ICC_ON
Supply Current (Enabled)
VCC = 5V, RTOFF/EN =100kΩ
–
2.9
3.8
VEN_ON
TOFF/EN Turn-on Threshold, Rising
TOFF/EN Driven, VTON > 0.6V
1.3
1.4
1.5
VEN_OFF
TOFF/EN Turn-off Threshold, Falling
TOFF/EN Driven, VTON < 0.2V
0.55
0.60
0.65
IEN START
TOFF/EN Input Current, device during startup
RTOFF/EN = 50KΩ
-22
-20
-18
IEN_ON
TOFF/EN Input Current, device enabled
RTOFF/EN = 100KΩ
-10.7
-10.0
-9.3
VCC Under-voltage Lock-out Threshold Rising –
VCC Under-voltage Lock-out Threshold
UVLOHYS
–
Hysteresis
MOSFET Voltage Sensing
2.8
3.0
3.2
V
–
200
–
mV
VTHARM
Arming Threshold
1.3
1.5
1.7
V
VTHON
MOSFET Turn-ON Threshold
-200
-130
-70
mV
–
-4
–
mV
VTHOFF
MOSFET Turn-OFF Threshold
-30
-20
-10
mV
–
30
–
–
30
–
–
15
30
RTON = 8.25KΩ
0.26
0.34
0.42
RTON = 100KΩ
2.25
3.00
3.75
RTOFF/EN = 100KΩ
–
0.5
–
RTOFF/EN = 125KΩ
–
0.9
–
VTOFF = 4V
–
1.0
–
VAVDD - 2.4
VAVDD - 2.0
VAVDD - 1.6
V
–
40
70
ns
–
2.0
–
KΩ
Symbol
Parameter
Conditions
µA
mA
V
µA
Under-voltage Lock-out (UVLO)
UVLOTH
TDON
MOSFET Turn-ON Propagation Delay
TDOFF
MOSFET Turn-OFF Propagation Delay
VD to GND, Rising
(VD - VS) Falling, VS = GND =
0V
(VD - VS) Rising, VS = GND =
0V, VCC ≥ 4.2V
(VD - VS) Rising, VS = GND =
0V, 2.8V < VCC < 4.2V
VTHON to 20% Level on Rising
of VGS of Embedded MOSFET
VTHOFF to 80% Level on Falling
of VGS of Embedded MOSFET
ns
MOSFET Static Characteristics
RDS(ON)
Drain Source ON Resistance
VCC = 5V, ID = 10A
mΩ
Minimum ON-time
TON
Minimum ON-time
µs
Minimum OFF-time
TOFF
Minimum OFF-time w/ SYNC
µs
Synchronization
VTHSYNC
SYNC Falling Threshold
TSDLY
SYNC Propagation Delay
RSYNC
SYNC Pull-up Resistor to AVDD
SYNC Falling 50% to MOSFET
Turn-OFF
Exception Handling
TOTP
TRECOVER
Fault Detection
Over-temperature
Temperature to Recover from Overtemperature Exception
–
–
+150
–
–
–
+125
–
Minimum ON-time Resistance Fault
–
–
150
–
–
5
–
AR30N60
Document number:DS37287 Rev.2 - 2
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°C
KΩ
February 2016
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AR30N60
Typical Performance Characteristics
Figure 3
Figure 4
Figure 5
Figure 6
Figure 8
Figure 7
AR30N60
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AR30N60
Typical Performance Characteristics (Cont.)
Figure 9
Figure 10
Figure 11
Figure 12
Figure 13
Figure 14
AR30N60
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AR30N60
Application Information
General Description
The AR30N60 is an Active/Synchronous Rectifier with embedded MOSFET. Together, with a primary-side controller of the typical flyback
architecture, a compact AC/DC power conversion system with high efficiency can be built. The AR30N60 is applicable to both the PSR
implementation where space is at a premium and the SSR implementation where the highest possible efficiency is often needed.
Operating under the SSR mode, the AR30N60 provides the necessary feedback to the primary-side controller via the highly popular AS431 and
the widely available opto-coupler. Innovative techniques like near-zero voltage detection are incorporated into the design to extend the ON time of
the embedded MOSFET to maximize the power conversion efficiency. In addition, the AR30N60 also works in exact synchronization to the
primary-side controller through the SYNC pin to mitigate the risk of shoot-through.
If the output of the voltage differentiator (VDS = VD – VS) falls below the turn-OFF threshold (VTHOFF) of the embedded MOSFET within the minimum
ON-time period (TON), the AR30N60 will transition into the Light-load Mode at the next cycle. When the load condition changes such that V DS ≈
VTHOFF, the AR30N60 reverts to its nominal mode of operation after the TON timer expires.
Before the embedded MOSFET can be set, the voltage level of VDS must be greater than the arming threshold (VTHARM) and the Minimum OFFtime (TOFF) timer must be reset. Once these conditions are met and the voltage internally sensed over the VD pin is 150mV lower than the VS pin,
the embedded MOSFET is turned ON, and the TON timer starts decrementing. The embedded MOSFET will remain ON for at least the length of
the TON period. This can only be overridden when a negative pulse is detected over the SNYC pin. After the TON timer expires, the embedded
MOSFET remains ON until VDS ≈ VTHOFF, at which point the embedded MOSFET is turned OFF. As iterated before, if the condition [VDS ≈ VTHOFF]
becomes true before the TON timer expires, the AR30N60 will enter the Light-load Mode. Consequently, the embedded MOSFET shall stay OFF at
the next cycle. When the drain voltage VD increases to 1.5V, the TOFF timer shall start decrementing, during which the embedded MOSFET is
prevented from being turning ON.
The SYNC pin is pulled-up internally through a 2KΩ resistor to the AVDD. It is nominally at 4.5V. The pin is typically driven by the primary-side
controller to turn ON/OFF the embedded MOSFET. Once the voltage level at the SYNC pin falls by more than 2V, the embedded MOSFET inside
the AR30N60 shall be turned OFF. Note that an external resistor should be used to limit the input current to less than 2mA.
When the AR30N60 operates under CCM, shoot-through between the MOSFET on the primary-side and the embedded MOSFET on the
secondary-side must be avoided. That is, one MOSFET must be turned OFF before the other one is going to be turned ON. In Figures1 & 2, the
recommended connection for the SYNC pin is shown. Whenever the gate of primary-side controller pulls „H‟, a pulse signal shall be transmitted
via an RC filter to the SYNC pin as a “pull-down signal”. As a result, the embedded MOSFET is turned OFF before the MOSFET on the primaryside can be fully turned ON. To avoid the fault condition while the MOSFET on the primary-side is still ON, the TOFF timer shall start decrementing
whenever the SYNC pin is “pulled down”. After the TOFF timer expires, the AR30N60 starts responding to the VDS signal at the next cycle.
In summary, the SYNC pin shall always be terminated in the application circuit on the primary-side to ensure proper system operation. In addition,
the protection and fault detection schemes like UVLO and OTP are incorporated in the AR30N60 to guarantee system reliability.
Modes of Operation
Sleep Mode
The Sleep Mode is a low-power operating mode. Entry is triggered when the voltage level appearing at the TOFF/EN pin becomes lower than the
VTOFF/EN threshold. Under the Sleep Mode, current consumed by the AR30N60 is close to ICC_STANDBY while the overall power consumption is down
to 1mW or less.
Upon entry into Sleep Mode, the embedded MOSFET along with the other blocks are turned OFF to minimize the power consumption. Once the
voltage level at the TOFF/EN pin rises above the VEN_ON, the AR30N60 shall exit Sleep Mode and transition into the Light-Load Mode. This
transition typically takes around 25μs during which the internal circuits are powered up in an orderly manner.
Regardless of the mode at which the AR30N60 is operating, the AR30N60 can be forced into the Sleep Mode whenever the voltage level at the
TOFF/EN pin drops to zero. The transition shall be immediate.
AR30N60
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AR30N60
Application Information (Cont.)
Light-Load Mode
When the inductor current on the secondary-side is small, the body-diode of the embedded MOSFET likely conducts for a time period much less
than TON. As long as the conduction time is less than TON, the embedded MOSFET shall stay OFF. The voltage across the body-diode, VDS, is
being monitored continuously. If the body-diode conduction time is larger than TON, the AR30N60 shall transition into the Active Mode at the next
cycle.
Active Mode
This is the normal operation mode under which the inductor current is large enough and the body-diode conduction time is larger than TON. During
the ON time, VDS is masked from affecting the operating status of the embedded MOSFET. At the expiration of the TON timer, monitoring of the VDS
resumes. As soon as VDS ≈ VTHOFF, the embedded MOSFET is turned OFF. At the next cycle, the embedded MOSFET shall be turned ON if and
only if:
1)
2)
the ON time of the embedded MOSFET in the previous cycle is larger than TON and
VDS < VTHON
If the ON time of the embedded MOSFET at the last cycle becomes (for whatever reason), less than the TON, AR30N60 shall transition into the
Light-load Mode at the next immediate cycle. In general, the embedded MOSFET alternates between the ON and OFF states in accordance to the
values of the following parameters: VDS, TON, TOFF, voltage level at the SYNC pin.
Pulse width <TON,
VTOFF/EN >0.7V
VTOFF/EN<1.4V
VTOFF/EN>1.4V
Sleep
mode
Power
on
Light
mode
VTOFF/EN<0.7V
Pulse width <TON
Pulse width >TON
VTOFF/EN<0.7V
Active
mode
Pulse width >TON
VTOFF/EN>0.7V
Figure 16 State Diagram
Fault Detection and System Protection
Over-temperature Protection
When the temperature of the AR30N60 rises above TOTP, the output of the SFB pin shall be pulled up. As a result, the primary-side controller is
informed of the abnormal condition via the typical opto-coupler. The primary-side controller typically responds by shutting down the whole
operation. Note that the OTP protection mechanism has a built-in hysteresis of +25°C to minimize false triggering.
UVLO Protection
Whenever the voltage level at the VCC pin falls below 2.8V (i.e. UVLOTH - UVLOHYS), the UVLO protection shall be invoked. The embedded
MOSFET is then turned OFF. Once the voltage level at the VCC pin rises above the UVLOTH, the AR30N60 will return to the normal operation at
the next cycle.
AR30N60
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AR30N60
Application Information (Cont.)
Device Power-On
When VCC < UVLOTH, the AR30N60 transitions into the Sleep Mode. At this time, the TOFF/EN pin is connected to ground through an internal
resistor.
When the VCC rises above UVLOTH, an internal current source starts to operate and eventually delivers 20µA (IEN_START) to the external resistor,
RTOFF/EN, which is connected to the TOFF/EN pin. Assuming a typical value of RTOFF/EN≥ 70KΩ, the VTOFF/EN eventually reaches 1.4V (VEN_ON) and
above. Then, the AR30N60 shall exit the Sleep Mode and transition into the Light-load Mode. Thereafter, the internal current source shall reduce
the output current to 10µA (IEN_ON).
ON Timer Setting
The TON period is set by adding a resistor between the TON pin and ground. During typical operation, the OFF/ON of the embedded MOSFET is
typically followed by successive oscillation in declining amplitude, i.e. ringing. This is caused by the parasitic existed on the printed circuit board.
Activating the TON timer prevents the AR30N60 from responding to the ringing. Once the TON timer starts decrementing, the voltage level of VDS is
ignored. After the TON timer expires, the value of VDS shall be checked continuously. Eventually, one of the following two situations shall become
true:
1)
2)
If VDS ≥ VTHOFF, the embedded MOSFET is turned OFF. The AR30N60 shall enter the Light-load Mode at the next cycle.
If the voltage level of the VDS remains substantially lower than the VTHOFF, the embedded MOSFET shall remain ON. When VDS ≥ VTHOFF,
the AR30N60 shall be turned OFF. If, for whatever reason, VDS remains lower than VTHOFF, the primary-side controller eventually shall
turn OFF the AR30N60. Regardless, the AR30N60 will enter the Active Mode at the next cycle.
TON (μS) = 0.028μS/KΩ x RTON + 0.1μS; where 0.24μS ≤ TON ≤ 4.3μS, 5KΩ ≤ RTON ≤ 125KΩ
OFF Timer Setting
In the typical applications of AR30N60 as illustrated in Figures 1 & 2, the SYNC pin is connected to the primary-side controller. The embedded
MOSFET is turned OFF whenever one of the following conditions becomes true:
1)
2)
VDS ≈ VTHOFF
The voltage level at the SYNC pin is pulled low
While the TOFF timer ensures that the embedded MOSFET stays OFF when the primary-side is conducting, the value of TOFF is set by an external
resistor, RTOFF/EN. The value of RTOFF/EN can be calculated from the following equation,
TOFF (µS) = [0.019µS/KΩ x RTOFF/EN (KΩ)] – 1.4µS; where 0.5μS ≤ TOFF ≤1.0μS, 100KΩ ≤ RTOFF/EN ≤ 125KΩ
AR30N60
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AR30N60
Application Information (Cont.)
MOSFET Turn-ON/OFF Control Sequence
DCM Operation with SYNC-pin Connected
PWM Signal on
Primary-side
0V
SYNC
VSYNC (AR) = VAVDD - 2V
VDS of
AR MOSFET
0V
Gate of
AR MOSFET
0V
ON Timer
0V
ARM
0V
OFF Timer
0V
(1) (3)
(2)
(5)
(4)
(7)
(6)
Steps of Operation
(1)
(2)
(3)
(4)
(5)
(6)
(7)
At the logic „H‟ of the internal signal ARM, the voltage level of VDS shall be checked continuously. At this time, no current should flow through
the embedded MOSFET (neither its body-diode).
When the primary-side controller stops conducting, the transfer of energy to the secondary-side commences. At this time, the current flowing
through the body-diode of embedded MOSFET shall rise rapidly. When VDS ≤ VTHON (-130mV typical), the embedded MOSFET is turned ON,
the TON timer starts decrementing, and the ARM signal is reset. Before the TON timer expires, the embedded MOSFET shall remain ON.
Now, the TON timer expires. If VDS is still lower than VTHOFF, the embedded MOSFET shall remain ON.
Eventually, the current flowing through the embedded MOSFET falls to zero. Once VDS ≈ VTHOFF, the embedded MOSFET shall be turned
OFF.
Because the ARM signal remains at the OFF state, the embedded MOSFET is kept at the OFF state even if VDS ≤ VTHON. That is, the value of
VDS is ignored.
The primary-side controller starts conducting. This causes the signal at the input of the SYNC pin to be pulled down. As soon as the condition
[VSYNC < (VAVDD – 2V)] becomes true, the TOFF timer starts decrementing.
After the TOFF timer expires, the AR30N60 starts to monitor the voltage level of VDS as soon as the ARM signal becomes „H‟.
AR30N60
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AR30N60
Application Information (Cont.)
CCM Operation with SYNC-pin Connected
PWM Signal In
Primary-side
0V
SYNC
VSYNC (AR) = VAVDD - 2V
VDS of
AR MOSFET
0V
Gate of
AR MOSFET
0V
ON Timer
0V
ARM
0V
OFF Timer
0V
(1) (3)
(2)
(5)
(4)
Steps of Operation
(1)
(2)
(3)
(4)
(5)
At the logic „H‟ of the internal signal ARM, the voltage level of VDS shall be checked continuously. At this time, no current shall flow through
the embedded MOSFET (neither its body-diode).
When the primary-side controller stops conducting, the transfer of energy to the secondary-side commences. At this time, the current flowing
through the body-diode of embedded MOSFET shall rise rapidly. When VDS ≤ VTHON (-130mV typical), the embedded MOSFET is turned ON,
the TON timer starts decrementing, and the ARM signal is reset. Before the TON timer expires, the embedded MOSFET shall remain ON.
Now, the TON timer expires. If VDS is still lower than VTHOFF, the embedded MOSFET shall remain ON.
In contrast to the operation under DCM, the current flowing through the embedded MOSFET never falls to zero. As a result, the voltage level
of VDS can never reach the VTHOFF (-4mV typical). Therefore, unlike in the case of the DCM operation, the embedded MOSFET shall remain
ON until the primary-side controller starts conducting. To avoid any possibility of shoot-through, the embedded MOSFET is turned OFF as
soon as the condition [VSYNC < (VAVDD – 2V)] becomes true. When the embedded MOSFET is turned OFF, the remaining energy starts to flow
through the body-diode. This creates a voltage drop far smaller than VTHON. Therefore, the TON timer is activated to prevent the embedded
MOSFET from being turned ON.
After the TOFF timer expires, the level of the ARM signal shall be checked continuously. As soon as it goes „H‟, the voltage level of VDS is
checked and step #1 repeats.
AR30N60
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AR30N60
Ordering Information (Note 8)
Note:
8. For packaging details, please visit our website at http://www.diodes.com/products/packages.html.
AR30N60PPA-13
Package
Packing
PPA: V-DFN6040-22
-13: Reel Size
Product
Marking
Reel Size (inches)
Tape Width (mm)
AR30N60PPA-13
AR30N60
13
12
13” Tape and Reel
Quantity
3,000/Tape & Reel
Part Number Suffix
-13
Marking Information
Logo
Part No
Date Code
Pin 1
AR30N60
Document number:DS37287 Rev.2 - 2
AR30N60
AR30N60
YYWW
AR30N60 = Product Name
YY: Year
WW: Week 01~52;
52 represents 52 and 53 weeks
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AR30N60
Package Outline Dimensions (All dimensions in mm.)
Please see http://www.diodes.com/package-outlines.html for the latest version.
V-DFN6040-22
A1
A3
A
Seating Plane
D
e
V-DFN6040-22
Dim
Min
Max
Typ
A
0.75 0.85
0.80
A1
0.00
0.05
0.02
A3
0.203 BSC
b
0.20
0.30
0.25
D
5.95
6.05
6.00
D2
3.82
4.02
3.92
D2a
1.10
1.30
1.20
E
3.95
4.05
4.00
E2
2.44
2.64
2.54
e
0.50 BSC
L
0.35
0.45
0.40
z
0.375 TYP
All Dimensions in mm
L
D2a
D2
E
E2
PIN#1 I.D.
C0.3
b
z
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
V-DFN6040-22
X5
X4
X
Dimensions
X1
G1
X2
X3
Y1
Y2
C-0.3*45°
Y
C
AR30N60
Document number:DS37287 Rev.2 - 2
C
G
G1
X
X1
X2
X3
X4
X5
Y
Y1
Y2
Value
(in mm)
0.500
0.150
0.200
0.350
2.850
1.330
4.050
5.350
5.660
0.650
2.700
4.400
G
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February 2016
© Diodes Incorporated
AR30N60
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
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website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales
channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or
systems.
Copyright © 2016, Diodes Incorporated
www.diodes.com
AR30N60
Document number:DS37287 Rev.2 - 2
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www.diodes.com
February 2016
© Diodes Incorporated
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