AR30N60 ACTIVE / SYNCHRONOUS RECTIFIER Description Pin Assignments The AR30N60 is a high-performance Active/Synchronous Rectifier used for secondary-side synchronous rectification with the output voltage at less than 10V. (Top View) By integrating MOSFET and controller, the AR30N60 emulates the characteristics of a near-ideal diode rectifier. The combination not only reduces the energy consumption of the secondary-side synchronous rectifier, it also improves the power dissipation of the sub-system on the primary side. The SYNC feature allows the embedded MOSFET of the AR30N60 to immediately turn OFF as soon as the primary-side switch turns ON, preventing the unfavorable reverse condition of the synchronous rectifier. The AR30N60 is ideally suited for AC/DC power converters implemented in either the flyback or the LLC-resonant topology. For the ease of use, the design of AR30N60 is flexible enough to facilitate operation in one of the following modes: Discontinuous Conduction (DCM), Continuous Conduction (CCM), Quasi Resonant (QR). To further improve conversion efficiency and to ensure system integrity, AR30N60 integrates many innovative features. These include: light-load detection to reduce standby power consumption, TON and TOFF/EN pins to prevent run-away ON-time due to the opencircuit or short-circuit fault conditions, SFB pin to provide overtemperature protection, low RDS(ON) of the embedded MOSFET, and wide output voltage (VCC) range. TON 1 22 TOFF/EN 2 21 GND SFB 3 20 NC 4 19 SYNC VS 5 18 NC VS 6 17 VD VS 7 VS 8 VS 9 14 VD VS 10 13 VD VS 11 12 VD GND VCC NC 16 VD VD 15 VD V-DFN6040-22 Applications Switched-mode power supply (SMPS) in consumer products (e.g. FPTV), web servers, and storage servers Power adapter and charger with either fixed or variable output voltage (e.g. USB Type-C, PD, fast charging, …) in notebook PCs, desktop PCs, All-In-One PCs, tablets, smartphones, and network clients Industrial and measuring equipment The small footprint of the V-DFN6040-22 package makes it ideally suited for space constrained applications. Features Secondary-side synchronous rectification Low Turn-OFF threshold at -4mV Wide operating temperature range from -40°C to +150°C Supports DCM, CCM, and QR (Quasi-Resonant) operating modes Built-in fault handling mechanism to provide high level of system stability: over-temperature (OTP) and over-voltage (OVP) protectionunder-voltage lock-out (UVLO) Light-load detection to reduce the standby power consumption Totally Lead-free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. ”Green” Device (Note 3) Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated‟s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. AR30N60 Document number:DS37287 Rev.2 - 2 1 of 15 www.diodes.com February 2016 © Diodes Incorporated AR30N60 Typical Application Circuit Type-C Connector USB Power Switch VCC T1 N VD VCC VS GND AR30N60 TON TOFF/EN SYNC VBUS RTON Current Sensor CC1 & CC2 D+ & D- L RTOFF/EN SFB M1 Primary-side Controller Type-C Controller C2 Opto-coupler Figure 1. USB Type-C Charger with Secondary-side Regulation (SSR) AR30N60 Document number:DS37287 Rev.2 - 2 2 of 15 www.diodes.com February 2016 © Diodes Incorporated AR30N60 Pin Description Pin Number Pin Name 1 TON 2 TOFF/EN 3 4,18,20 5-11 12-17, VD Pad SFB NC VS VD SYNC 19 21,GND Pad 22 Function Minimum ON-time Control Input. The resistor, RTON, shall be connected between this pin and GND to create a voltage reference for the circuit inside the device. Minimum OFF-time / Enable Control Input. It combines the functions of setting the Minimum OFF-time as well as chip enable. The resistor, RTOFF/EN, shall be connected between this pin and GND. Secondary-side Feedback Output. It is connected to the internal resistor network for feedback purpose. No Connection. Embedded MOSFET Source Terminal Input. It shall be connected to GND. Embedded MOSFET Drain Terminal Input. It shall be connected as close as possible to the transformer. Synchronization Input. This must be connected, through a RC filter, to either the output of the gate driver to the embedded MOSFET of the primary-side, or to the drain terminal of the MOSFET of the primary-side. Ground Pin. IC Supply Voltage Input. A ceramic capacitor of 10F shall be connected between this pin and GND. GND VCC Functional Block Diagram VCC VD SFB AVDD TOFF/EN LDO Enable Control OFF Timer UVLO Vref VD OVP Vref General Control Logic & Exception Handling 1.5V VTHOFF VTHON Driver ARM VS GATE AVDD-2V ON Timer AVDD TON SYNC GND VS Figure 2. Internal Functional Block Diagrams of AR30N60 AR30N60 Document number:DS37287 Rev.2 - 2 3 of 15 www.diodes.com February 2016 © Diodes Incorporated AR30N60 Absolute Maximum Ratings (@ TA = +25°C, unless otherwise specified.) (Note 4) Symbol VCC VDS VTOFF/EN, VTON TMJ TST ESD Note: Parameter Supply Voltage Voltage Across Drain and Source Voltage on TOFF/EN, TON Pins Maximum Junction Temperature Storage Temperature Human Body Model, JESD22-A114 Machine Model, JESD22-A115-A Charged Device Model, JESD22-C101 Ratings -0.3 to 10.0 -1 to 60 -0.3 to 6.0 +150 -65 to +150 3.0 0.25 1.0 Unit V V V °C °C KV 4. These are stress ratings only. Operation outside the absolute maximum ratings may cause device failure. Operation at the absolute maximum rating for extended periods may reduce device reliability. Package Thermal Data (@ TA = +25°C, unless otherwise specified.) Symbol PD θJA θJC Notes: Parameter Power Dissipation (Note 5) Thermal Resistance, Junction-to-Ambient (Note 6) Thermal Resistance, Junction-to-Case (Note 7) Rating 2.39 52.2 2.3 Unit W °C/W °C/W 5. Device mounted on FR-4 PCB, 2oz with minimum recommended pad layout. 6. Device mounted on 25mm x 25mm 2oz copper board. 7. Device mounted on 50mm x 50mm 2oz copper board. Recommended Operating Conditions Symbol VCC VDS FSW RTON RTOFF/EN TJ Parameter Supply Voltage Range Voltage across Drain and Source Switching Frequency TON Resistor TOFF/EN Resistor w/ SYNC Operating Junction Temperature AR30N60 Document number:DS37287 Rev.2 - 2 Min 3.5 -0.6 20 5 100 -40 4 of 15 www.diodes.com Max 9.0 60.0 600 125 125 +125 Unit V KHz KΩ °C February 2016 © Diodes Incorporated AR30N60 Electrical Characteristics (@ TA = +25°C, unless otherwise specified.) Min Typ Max Unit VAVDD Internal Regulator Output VCC = 5V – 4.5 – V ICC_START Supply Current (Under-voltage) VCC = 2.6V – 160 – ICC_STANDBY Supply Current (Disabled) VCC = 5V, RTOFF/EN = 0Ω – 380 500 ICC_ON Supply Current (Enabled) VCC = 5V, RTOFF/EN =100kΩ – 2.9 3.8 VEN_ON TOFF/EN Turn-on Threshold, Rising TOFF/EN Driven, VTON > 0.6V 1.3 1.4 1.5 VEN_OFF TOFF/EN Turn-off Threshold, Falling TOFF/EN Driven, VTON < 0.2V 0.55 0.60 0.65 IEN START TOFF/EN Input Current, device during startup RTOFF/EN = 50KΩ -22 -20 -18 IEN_ON TOFF/EN Input Current, device enabled RTOFF/EN = 100KΩ -10.7 -10.0 -9.3 VCC Under-voltage Lock-out Threshold Rising – VCC Under-voltage Lock-out Threshold UVLOHYS – Hysteresis MOSFET Voltage Sensing 2.8 3.0 3.2 V – 200 – mV VTHARM Arming Threshold 1.3 1.5 1.7 V VTHON MOSFET Turn-ON Threshold -200 -130 -70 mV – -4 – mV VTHOFF MOSFET Turn-OFF Threshold -30 -20 -10 mV – 30 – – 30 – – 15 30 RTON = 8.25KΩ 0.26 0.34 0.42 RTON = 100KΩ 2.25 3.00 3.75 RTOFF/EN = 100KΩ – 0.5 – RTOFF/EN = 125KΩ – 0.9 – VTOFF = 4V – 1.0 – VAVDD - 2.4 VAVDD - 2.0 VAVDD - 1.6 V – 40 70 ns – 2.0 – KΩ Symbol Parameter Conditions µA mA V µA Under-voltage Lock-out (UVLO) UVLOTH TDON MOSFET Turn-ON Propagation Delay TDOFF MOSFET Turn-OFF Propagation Delay VD to GND, Rising (VD - VS) Falling, VS = GND = 0V (VD - VS) Rising, VS = GND = 0V, VCC ≥ 4.2V (VD - VS) Rising, VS = GND = 0V, 2.8V < VCC < 4.2V VTHON to 20% Level on Rising of VGS of Embedded MOSFET VTHOFF to 80% Level on Falling of VGS of Embedded MOSFET ns MOSFET Static Characteristics RDS(ON) Drain Source ON Resistance VCC = 5V, ID = 10A mΩ Minimum ON-time TON Minimum ON-time µs Minimum OFF-time TOFF Minimum OFF-time w/ SYNC µs Synchronization VTHSYNC SYNC Falling Threshold TSDLY SYNC Propagation Delay RSYNC SYNC Pull-up Resistor to AVDD SYNC Falling 50% to MOSFET Turn-OFF Exception Handling TOTP TRECOVER Fault Detection Over-temperature Temperature to Recover from Overtemperature Exception – – +150 – – – +125 – Minimum ON-time Resistance Fault – – 150 – – 5 – AR30N60 Document number:DS37287 Rev.2 - 2 5 of 15 www.diodes.com °C KΩ February 2016 © Diodes Incorporated AR30N60 Typical Performance Characteristics Figure 3 Figure 4 Figure 5 Figure 6 Figure 8 Figure 7 AR30N60 Document number:DS37287 Rev.2 - 2 6 of 15 www.diodes.com February 2016 © Diodes Incorporated AR30N60 Typical Performance Characteristics (Cont.) Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14 AR30N60 Document number:DS37287 Rev.2 - 2 7 of 15 www.diodes.com February 2016 © Diodes Incorporated AR30N60 Application Information General Description The AR30N60 is an Active/Synchronous Rectifier with embedded MOSFET. Together, with a primary-side controller of the typical flyback architecture, a compact AC/DC power conversion system with high efficiency can be built. The AR30N60 is applicable to both the PSR implementation where space is at a premium and the SSR implementation where the highest possible efficiency is often needed. Operating under the SSR mode, the AR30N60 provides the necessary feedback to the primary-side controller via the highly popular AS431 and the widely available opto-coupler. Innovative techniques like near-zero voltage detection are incorporated into the design to extend the ON time of the embedded MOSFET to maximize the power conversion efficiency. In addition, the AR30N60 also works in exact synchronization to the primary-side controller through the SYNC pin to mitigate the risk of shoot-through. If the output of the voltage differentiator (VDS = VD – VS) falls below the turn-OFF threshold (VTHOFF) of the embedded MOSFET within the minimum ON-time period (TON), the AR30N60 will transition into the Light-load Mode at the next cycle. When the load condition changes such that V DS ≈ VTHOFF, the AR30N60 reverts to its nominal mode of operation after the TON timer expires. Before the embedded MOSFET can be set, the voltage level of VDS must be greater than the arming threshold (VTHARM) and the Minimum OFFtime (TOFF) timer must be reset. Once these conditions are met and the voltage internally sensed over the VD pin is 150mV lower than the VS pin, the embedded MOSFET is turned ON, and the TON timer starts decrementing. The embedded MOSFET will remain ON for at least the length of the TON period. This can only be overridden when a negative pulse is detected over the SNYC pin. After the TON timer expires, the embedded MOSFET remains ON until VDS ≈ VTHOFF, at which point the embedded MOSFET is turned OFF. As iterated before, if the condition [VDS ≈ VTHOFF] becomes true before the TON timer expires, the AR30N60 will enter the Light-load Mode. Consequently, the embedded MOSFET shall stay OFF at the next cycle. When the drain voltage VD increases to 1.5V, the TOFF timer shall start decrementing, during which the embedded MOSFET is prevented from being turning ON. The SYNC pin is pulled-up internally through a 2KΩ resistor to the AVDD. It is nominally at 4.5V. The pin is typically driven by the primary-side controller to turn ON/OFF the embedded MOSFET. Once the voltage level at the SYNC pin falls by more than 2V, the embedded MOSFET inside the AR30N60 shall be turned OFF. Note that an external resistor should be used to limit the input current to less than 2mA. When the AR30N60 operates under CCM, shoot-through between the MOSFET on the primary-side and the embedded MOSFET on the secondary-side must be avoided. That is, one MOSFET must be turned OFF before the other one is going to be turned ON. In Figures1 & 2, the recommended connection for the SYNC pin is shown. Whenever the gate of primary-side controller pulls „H‟, a pulse signal shall be transmitted via an RC filter to the SYNC pin as a “pull-down signal”. As a result, the embedded MOSFET is turned OFF before the MOSFET on the primaryside can be fully turned ON. To avoid the fault condition while the MOSFET on the primary-side is still ON, the TOFF timer shall start decrementing whenever the SYNC pin is “pulled down”. After the TOFF timer expires, the AR30N60 starts responding to the VDS signal at the next cycle. In summary, the SYNC pin shall always be terminated in the application circuit on the primary-side to ensure proper system operation. In addition, the protection and fault detection schemes like UVLO and OTP are incorporated in the AR30N60 to guarantee system reliability. Modes of Operation Sleep Mode The Sleep Mode is a low-power operating mode. Entry is triggered when the voltage level appearing at the TOFF/EN pin becomes lower than the VTOFF/EN threshold. Under the Sleep Mode, current consumed by the AR30N60 is close to ICC_STANDBY while the overall power consumption is down to 1mW or less. Upon entry into Sleep Mode, the embedded MOSFET along with the other blocks are turned OFF to minimize the power consumption. Once the voltage level at the TOFF/EN pin rises above the VEN_ON, the AR30N60 shall exit Sleep Mode and transition into the Light-Load Mode. This transition typically takes around 25μs during which the internal circuits are powered up in an orderly manner. Regardless of the mode at which the AR30N60 is operating, the AR30N60 can be forced into the Sleep Mode whenever the voltage level at the TOFF/EN pin drops to zero. The transition shall be immediate. AR30N60 Document number:DS37287 Rev.2 - 2 8 of 15 www.diodes.com February 2016 © Diodes Incorporated AR30N60 Application Information (Cont.) Light-Load Mode When the inductor current on the secondary-side is small, the body-diode of the embedded MOSFET likely conducts for a time period much less than TON. As long as the conduction time is less than TON, the embedded MOSFET shall stay OFF. The voltage across the body-diode, VDS, is being monitored continuously. If the body-diode conduction time is larger than TON, the AR30N60 shall transition into the Active Mode at the next cycle. Active Mode This is the normal operation mode under which the inductor current is large enough and the body-diode conduction time is larger than TON. During the ON time, VDS is masked from affecting the operating status of the embedded MOSFET. At the expiration of the TON timer, monitoring of the VDS resumes. As soon as VDS ≈ VTHOFF, the embedded MOSFET is turned OFF. At the next cycle, the embedded MOSFET shall be turned ON if and only if: 1) 2) the ON time of the embedded MOSFET in the previous cycle is larger than TON and VDS < VTHON If the ON time of the embedded MOSFET at the last cycle becomes (for whatever reason), less than the TON, AR30N60 shall transition into the Light-load Mode at the next immediate cycle. In general, the embedded MOSFET alternates between the ON and OFF states in accordance to the values of the following parameters: VDS, TON, TOFF, voltage level at the SYNC pin. Pulse width <TON, VTOFF/EN >0.7V VTOFF/EN<1.4V VTOFF/EN>1.4V Sleep mode Power on Light mode VTOFF/EN<0.7V Pulse width <TON Pulse width >TON VTOFF/EN<0.7V Active mode Pulse width >TON VTOFF/EN>0.7V Figure 16 State Diagram Fault Detection and System Protection Over-temperature Protection When the temperature of the AR30N60 rises above TOTP, the output of the SFB pin shall be pulled up. As a result, the primary-side controller is informed of the abnormal condition via the typical opto-coupler. The primary-side controller typically responds by shutting down the whole operation. Note that the OTP protection mechanism has a built-in hysteresis of +25°C to minimize false triggering. UVLO Protection Whenever the voltage level at the VCC pin falls below 2.8V (i.e. UVLOTH - UVLOHYS), the UVLO protection shall be invoked. The embedded MOSFET is then turned OFF. Once the voltage level at the VCC pin rises above the UVLOTH, the AR30N60 will return to the normal operation at the next cycle. AR30N60 Document number:DS37287 Rev.2 - 2 9 of 15 www.diodes.com February 2016 © Diodes Incorporated AR30N60 Application Information (Cont.) Device Power-On When VCC < UVLOTH, the AR30N60 transitions into the Sleep Mode. At this time, the TOFF/EN pin is connected to ground through an internal resistor. When the VCC rises above UVLOTH, an internal current source starts to operate and eventually delivers 20µA (IEN_START) to the external resistor, RTOFF/EN, which is connected to the TOFF/EN pin. Assuming a typical value of RTOFF/EN≥ 70KΩ, the VTOFF/EN eventually reaches 1.4V (VEN_ON) and above. Then, the AR30N60 shall exit the Sleep Mode and transition into the Light-load Mode. Thereafter, the internal current source shall reduce the output current to 10µA (IEN_ON). ON Timer Setting The TON period is set by adding a resistor between the TON pin and ground. During typical operation, the OFF/ON of the embedded MOSFET is typically followed by successive oscillation in declining amplitude, i.e. ringing. This is caused by the parasitic existed on the printed circuit board. Activating the TON timer prevents the AR30N60 from responding to the ringing. Once the TON timer starts decrementing, the voltage level of VDS is ignored. After the TON timer expires, the value of VDS shall be checked continuously. Eventually, one of the following two situations shall become true: 1) 2) If VDS ≥ VTHOFF, the embedded MOSFET is turned OFF. The AR30N60 shall enter the Light-load Mode at the next cycle. If the voltage level of the VDS remains substantially lower than the VTHOFF, the embedded MOSFET shall remain ON. When VDS ≥ VTHOFF, the AR30N60 shall be turned OFF. If, for whatever reason, VDS remains lower than VTHOFF, the primary-side controller eventually shall turn OFF the AR30N60. Regardless, the AR30N60 will enter the Active Mode at the next cycle. TON (μS) = 0.028μS/KΩ x RTON + 0.1μS; where 0.24μS ≤ TON ≤ 4.3μS, 5KΩ ≤ RTON ≤ 125KΩ OFF Timer Setting In the typical applications of AR30N60 as illustrated in Figures 1 & 2, the SYNC pin is connected to the primary-side controller. The embedded MOSFET is turned OFF whenever one of the following conditions becomes true: 1) 2) VDS ≈ VTHOFF The voltage level at the SYNC pin is pulled low While the TOFF timer ensures that the embedded MOSFET stays OFF when the primary-side is conducting, the value of TOFF is set by an external resistor, RTOFF/EN. The value of RTOFF/EN can be calculated from the following equation, TOFF (µS) = [0.019µS/KΩ x RTOFF/EN (KΩ)] – 1.4µS; where 0.5μS ≤ TOFF ≤1.0μS, 100KΩ ≤ RTOFF/EN ≤ 125KΩ AR30N60 Document number:DS37287 Rev.2 - 2 10 of 15 www.diodes.com February 2016 © Diodes Incorporated AR30N60 Application Information (Cont.) MOSFET Turn-ON/OFF Control Sequence DCM Operation with SYNC-pin Connected PWM Signal on Primary-side 0V SYNC VSYNC (AR) = VAVDD - 2V VDS of AR MOSFET 0V Gate of AR MOSFET 0V ON Timer 0V ARM 0V OFF Timer 0V (1) (3) (2) (5) (4) (7) (6) Steps of Operation (1) (2) (3) (4) (5) (6) (7) At the logic „H‟ of the internal signal ARM, the voltage level of VDS shall be checked continuously. At this time, no current should flow through the embedded MOSFET (neither its body-diode). When the primary-side controller stops conducting, the transfer of energy to the secondary-side commences. At this time, the current flowing through the body-diode of embedded MOSFET shall rise rapidly. When VDS ≤ VTHON (-130mV typical), the embedded MOSFET is turned ON, the TON timer starts decrementing, and the ARM signal is reset. Before the TON timer expires, the embedded MOSFET shall remain ON. Now, the TON timer expires. If VDS is still lower than VTHOFF, the embedded MOSFET shall remain ON. Eventually, the current flowing through the embedded MOSFET falls to zero. Once VDS ≈ VTHOFF, the embedded MOSFET shall be turned OFF. Because the ARM signal remains at the OFF state, the embedded MOSFET is kept at the OFF state even if VDS ≤ VTHON. That is, the value of VDS is ignored. The primary-side controller starts conducting. This causes the signal at the input of the SYNC pin to be pulled down. As soon as the condition [VSYNC < (VAVDD – 2V)] becomes true, the TOFF timer starts decrementing. After the TOFF timer expires, the AR30N60 starts to monitor the voltage level of VDS as soon as the ARM signal becomes „H‟. AR30N60 Document number:DS37287 Rev.2 - 2 11 of 15 www.diodes.com February 2016 © Diodes Incorporated AR30N60 Application Information (Cont.) CCM Operation with SYNC-pin Connected PWM Signal In Primary-side 0V SYNC VSYNC (AR) = VAVDD - 2V VDS of AR MOSFET 0V Gate of AR MOSFET 0V ON Timer 0V ARM 0V OFF Timer 0V (1) (3) (2) (5) (4) Steps of Operation (1) (2) (3) (4) (5) At the logic „H‟ of the internal signal ARM, the voltage level of VDS shall be checked continuously. At this time, no current shall flow through the embedded MOSFET (neither its body-diode). When the primary-side controller stops conducting, the transfer of energy to the secondary-side commences. At this time, the current flowing through the body-diode of embedded MOSFET shall rise rapidly. When VDS ≤ VTHON (-130mV typical), the embedded MOSFET is turned ON, the TON timer starts decrementing, and the ARM signal is reset. Before the TON timer expires, the embedded MOSFET shall remain ON. Now, the TON timer expires. If VDS is still lower than VTHOFF, the embedded MOSFET shall remain ON. In contrast to the operation under DCM, the current flowing through the embedded MOSFET never falls to zero. As a result, the voltage level of VDS can never reach the VTHOFF (-4mV typical). Therefore, unlike in the case of the DCM operation, the embedded MOSFET shall remain ON until the primary-side controller starts conducting. To avoid any possibility of shoot-through, the embedded MOSFET is turned OFF as soon as the condition [VSYNC < (VAVDD – 2V)] becomes true. When the embedded MOSFET is turned OFF, the remaining energy starts to flow through the body-diode. This creates a voltage drop far smaller than VTHON. Therefore, the TON timer is activated to prevent the embedded MOSFET from being turned ON. After the TOFF timer expires, the level of the ARM signal shall be checked continuously. As soon as it goes „H‟, the voltage level of VDS is checked and step #1 repeats. AR30N60 Document number:DS37287 Rev.2 - 2 12 of 15 www.diodes.com February 2016 © Diodes Incorporated AR30N60 Ordering Information (Note 8) Note: 8. For packaging details, please visit our website at http://www.diodes.com/products/packages.html. AR30N60PPA-13 Package Packing PPA: V-DFN6040-22 -13: Reel Size Product Marking Reel Size (inches) Tape Width (mm) AR30N60PPA-13 AR30N60 13 12 13” Tape and Reel Quantity 3,000/Tape & Reel Part Number Suffix -13 Marking Information Logo Part No Date Code Pin 1 AR30N60 Document number:DS37287 Rev.2 - 2 AR30N60 AR30N60 YYWW AR30N60 = Product Name YY: Year WW: Week 01~52; 52 represents 52 and 53 weeks 13 of 15 www.diodes.com February 2016 © Diodes Incorporated AR30N60 Package Outline Dimensions (All dimensions in mm.) Please see http://www.diodes.com/package-outlines.html for the latest version. V-DFN6040-22 A1 A3 A Seating Plane D e V-DFN6040-22 Dim Min Max Typ A 0.75 0.85 0.80 A1 0.00 0.05 0.02 A3 0.203 BSC b 0.20 0.30 0.25 D 5.95 6.05 6.00 D2 3.82 4.02 3.92 D2a 1.10 1.30 1.20 E 3.95 4.05 4.00 E2 2.44 2.64 2.54 e 0.50 BSC L 0.35 0.45 0.40 z 0.375 TYP All Dimensions in mm L D2a D2 E E2 PIN#1 I.D. C0.3 b z Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. V-DFN6040-22 X5 X4 X Dimensions X1 G1 X2 X3 Y1 Y2 C-0.3*45° Y C AR30N60 Document number:DS37287 Rev.2 - 2 C G G1 X X1 X2 X3 X4 X5 Y Y1 Y2 Value (in mm) 0.500 0.150 0.200 0.350 2.850 1.330 4.050 5.350 5.660 0.650 2.700 4.400 G 14 of 15 www.diodes.com February 2016 © Diodes Incorporated AR30N60 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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