elm23401ca

Single P-channel MOSFET
ELM23401CA-S
■General description
■Features
ELM23401CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
•
Vds=-30V
Id=-4.0A
Rds(on) = 65mΩ (Vgs=-10V)
Rds(on) = 75mΩ (Vgs=-4.5V)
Rds(on) = 100mΩ (Vgs=-2.5V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Gate-source voltage
Ta=25°C
Ta=70°C
Continuous drain current
Pulsed drain current
Tc=25°C
Tc=70°C
Power dissipation
Junction and storage temperature range
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Vds
Vgs
-30
±12
V
V
Id
-4.0
-3.2
A
Idm
-27
A
3
Pd
1.2
0.8
W
2
Tj, Tstg
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
Rθja
■Pin configuration
Typ.
100
Max.
125
Unit
°C/W
■Circuit
SOT-23(TOP VIEW)
3
1
2
Note
1
D
Pin No.
Pin name
1
2
3
GATE
SOURCE
DRAIN
G
S
Rev.1.0
3-1
Single P-channel MOSFET
ELM23401CA-S
http://www.elm-tech.com
■Electrical characteristics
Parameter
Symbol
Condition
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
STATIC PARAMETERS
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage
Static drain-source on-resistance
BVdss Vgs=0V, Id=-250μA
Vds=-30V, Vgs=0V
Idss
Vds=-24V, Vgs=0V, Ta=125°C
Igss Vds=0V, Vgs=±12V
Vgs(th) Vds=Vgs, Id=-250μA
-30
V
-1
-10
-0.7
±100
-0.9
Vgs=-10V, Id=-4A
55
65
Rds(on) Vgs=-4.5V, Id=-3A
Vgs=-2.5V, Id=-2A
65
85
75
100
15
nA
V
mΩ
Gfs
Vsd
Is
Pulsed body-diode current
DYNAMIC PARAMETERS
Ism
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Ciss
Coss Vgs=0V, Vds=-15V, f=1MHz
Crss
830
60
50
pF
pF
pF
Qg
Qgs
17.0
1.5
nC
nC
4
4
Vgs=Vds=0V, Force Current
Vgs=-4.5V, Vds=-15V
Id=-4A
-1
-2
S
V
A
-16.4
A
4
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
Gate-source charge
Vds=-10V, Id=-5A
Is=-1A, Vgs=0V
-0.4
μA
4
Gate-drain charge
Turn-on delay time
Turn-on rise time
Qgd
td(on)
tr
Vgs=-10V, Vds=-15V
0.9
5.4
19.4
nC
ns
ns
4
4
4
Turn-off delay time
td(off) Id=-1A, Rgen=6Ω
tf
45.9
12.4
ns
ns
4
4
Turn-off fall time
NOTE :
1. The value of Rθja is measured with the device on 625mm² 70μ 2 layer copper 1.6t FR4 PCB in a still air environment
with Ta=25°C.
2. The power dissipation Pd is based on Tj(max)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
3. Repetitive rating, pulse width limited by temperature Tj(max)=150°C. Ratings are based on low frequency and duty
cycles to keep initial Ta=25°C.
4. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%.
Rev.1.0
3-2
Single P-channel MOSFET
ELM23401CA-S
PM3211NS
■Typical30V
electrical
and
thermal characteristics
P-Channel
MOSFETs
Normalized On Resistance (m)
-ID , Continuous Drain Current (A)
http://www.elm-tech.com
TJ , Junction Temperature (℃)
Fig.2 Normalized RDSON vs. TJ
-VGS , Gate to Source Voltage (V)
Normalized Gate Threshold Voltage (V)
TC , Case Temperature (℃)
Fig.1 Continuous Drain Current vs. TC
TJ , Junction Temperature (℃)
Qg , Gate Charge (nC)
Fig.4 Gate Charge Waveform
-ID , Continuous Drain Current (A)
Normalized Thermal Response (RθJA)
Fig.3 Normalized Vth vs. TJ
Square Wave Pulse Duration (s)
Fig.5 Normalized Transient Impedance
-VDS , Drain to Source Voltage (V)
Fig.6 Maximum Safe Operation Area
Powermate Electronics Corp.
Ver.1.00
3-3
3
Rev.1.0
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