elm5e401pa

Single P-channel MOSFET
ELM5E401PA-S
■General description
■Features
ELM5E401PA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
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■Maximum absolute ratings
Parameter
Drain-source voltage
Symbol
Vdss
Gate-source voltage
Vgs
Ta=25°C
Continuous drain current
Id
Ta=70°C
Pulsed drain current
Idm
Tc=25°C
Power dissipation
Pd
Tc=70°C
Junction and storage temperature range
Tj, Tstg
■Pin configuration
Vds=-20V
Id=-0.7A
Rds(on) = 620mΩ (Vgs=-4.5V)
Rds(on) = 860mΩ (Vgs=-2.5V)
Rds(on) = 1450mΩ (Vgs=-1.8V)
Ta=25°C. Unless otherwise noted.
Limit
Unit
-20
V
±12
-0.7
V
A
-0.4
-1.0
0.27
A
1
2
°C
■Circuit
SOT-523(TOP VIEW)
3
W
0.16
- 55 to 150
D
Pin No.
Pin name
1
2
3
GATE
SOURCE
DRAIN
G
S
5-1
Single P-channel MOSFET
ELM5E401PA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
BVdss Vgs=0V, Id=-250μA
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Gate threshold voltage
On state drain current
Static drain-source on-resistance
Condition
Vds=-20V, Vgs=0V, Ta=85°C
-5
Vds=0V, Vgs=±12V
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-4.5V, Vds=-5V
±100
nA
-1.0
V
A
500
620
Rds(on) Vgs=-2.5V, Id=-0.5A
700
860
1000
1
1450
-0.65
-1.20
V
-0.3
A
100
pF
Diode forward voltage
Vsd
Is=-0.15A, Vgs=0V
Is
Ciss
Coss
Crss
Gate-source charge
Qg
Qgs
Gate-drain charge
Turn-on delay time
Qgd
td(on)
Turn-off fall time
-0.4
-0.7
μA
Vgs=-4.5V, Id=-0.6A
Gfs
Turn-on rise time
Turn-off delay time
V
-1
Forward transconductance
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
-20
Vds=-20V, Vgs=0V
Vgs=-1.8V, Id=-0.4A
Vds=-10V, Id=-0.4A
Max. body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit
70
Vgs=0V, Vds=-10V, f=1MHz
Vgs=-4.5V, Vds=-10V
Id=-0.25A
Vgs=-4.5V, Vds=-10V
tr
RL=30Ω, Id=-0.2A
td(off)
Rgen=10Ω
tf
5-2
S
20
10
1.0
0.1
mΩ
pF
pF
1.3
nC
nC
0.3
10
15
nC
ns
10
15
ns
40
60
ns
30
50
ns
AFP1013
Alfa-MOS
20V P-Channel
Technology
Enhancement Mode MOSFET
Single P-channel MOSFET
ELM5E401PA-S
■Typical
electrical and thermal characteristics
Typical
Characteristics
©Alfa-MOS Technology Corp.
Rev.A Jan. 2011
www.alfa-mos.com
Page 3
5-3
AFP1013
Alfa-MOS
20V P-Channel
Technology
Enhancement Mode MOSFET
Single P-channel MOSFET
ELM5E401PA-S
Typical Characteristics
©Alfa-MOS Technology Corp.
Rev.A Jan. 2011
www.alfa-mos.com
Page 4
5-4
Alfa-MOS
Single P-channel MOSFET
Technology
AFP1013
20V P-Channel
Enhancement Mode MOSFET
ELM5E401PA-S
■Test circuit and waveform
Typical Characteristics
©Alfa-MOS Technology Corp.
Rev.A Jan. 2011
www.alfa-mos.com
Page 5
5-5
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