elm3dk512a

Single N-channel MOSFET
ELM3DK512A
■General description
■Features
ELM3DK512A-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
■Maximum absolute ratings
Parameter
Vds=30V
Id=22A
Rds(on) < 2.8mΩ (Vgs=10V)
Rds(on) < 3.6mΩ (Vgs=4.5V)
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
30
V
Drain-source voltage
Symbol
Vds
Gate-source voltage
Vgs
±20
V
Id
22
17
A
Idm
Ias
Eas
150
49
120
A
A
mJ
Ta=25°C
Ta=70°C
Continuous drain current
Pulsed drain current
Avalanche current
Avalanche energy
L=0.1mH
Tc=25°C
Tc=70°C
Power dissipation
Junction and storage temperature range
2.5
1.6
-55 to 150
Pd
Tj, Tstg
4
W
°C
■Thermal characteristics
Parameter
Maximum junction-to-case
Symbol
Rθjc
Maximum junction-to-ambient
Rθja
■Pin configuration
PDFN-5×6(TOP VIEW)
8
•
1
7
2
6
3
5
4
Pin No.
1
Pin name
SOURCE
2
3
4
SOURCE
SOURCE
GATE
5
6
7
DRAIN
DRAIN
DRAIN
8
DRAIN
4- 1
Typ.
Max.
3
Unit
°C/W
Note
50
°C/W
5
■Circuit
D
G
S
Single N-channel MOSFET
ELM3DK512A
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Gate threshold voltage
Static drain-source on-resistance
Condition
Vds=20V, Vgs=0V, Ta=55°C
10
Vds=0V, Vgs=±20V
Gfs
Vds=5V, Id=20A
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Vsd
Is
If=20A, Vgs=0V
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
Total gate charge (Vgs=4.5V)
Gate-source charge
Qg
Qgs
V
1
Vgs(th) Vds=Vgs, Id=250μA
Vgs=10V, Id=20A
Rds(on)
Vgs=4.5V, Id=16A
Rg
30
Vds=24V, Vgs=0V
Forward transconductance
Gate resistance
SWITCHING PARAMETERS
Total gate charge (Vgs=10V)
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
1.2
μA
±100
nA
1.5
2.3
3.0
2.8
V
2.7
3.6
mΩ
1
S
1
V
A
1
3
112
1
93
3170
369
295
pF
pF
pF
Vgs=0V, Vds=0V, f=1MHz
0.8
Ω
Vds=15V, Id=20A
Vgs=10V
65
34
9
nC
nC
nC
2
2
2
Vgs=0V, Vds=15V
f=1MHz
Gate-drain charge
Turn-on delay time
Qgd
td(on)
13
29
nC
ns
2
2
Turn-on rise time
Turn-off delay time
tr
13
ns
2
57
ns
2
14
28
ns
ns
2
17
nC
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
Vds=15V, Id=20A
td(off) Vgs=20V, Rgen=6Ω
tf
trr
Qrr
If=20A, dIf/dt=100A/μs
NOTE :
1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%.
2. Independent of operating temperature.
3. Package limitation current is 30A.
4. Pulsed width limited by maximum junction temperature.
5. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
4- 2
Single N-channel MOSFET
N-Channel
Enhancement Mode
PK512BA
ELM3DK512A
PDFN 5x6P
Field Effect Transistor
Halogen-Free & Lead-Free
■Typical electrical and thermal characteristics
NIKO-SEM
Output Characteristics
VGS=10V
VGS=9V
VGS=8V
VGS=7V
VGS=6V
VGS=5V
VGS=4.5V
VGS=3V
30
24
Transfer Characteristics
36
VGS=2.5V
ID, Drain-To-Source Current(A)
ID, Drain-To-Source Current(A)
36
18
12
6
0
0
1
2
3
4
30
24
18
12
25�
6
0
5
0
VDS, Drain-To-Source Voltage(V)
1
3000
1.6
C , Capacitance(pF)
Normalized Drain to Source
ON-Resistance
1.8
1.4
1.2
1.0
0.8
VGS=10V
ID=20A
-50
-25
0
25
50
75
100
5
2500
2000
1500
1000
500
125
0
150
COSS
CRSS
0
5
10
15
20
25
30
VDS, Drain-To-Source Voltage(V)
Source-Drain Diode Forward Voltage
Gate charge Characteristics
100
VDS=50V
ID=20A
8
IS , Source Current(A)
VGS , Gate-To-Source Voltage(V)
4
CISS
TJ , Junction Temperature(C)
10
3
Capacitance Characteristic
3500
0.4
2
VGS, Gate-To-Source Voltage(V)
On-Resistance VS Temperature
2.0
0.6
-20�
125�
6
4
10
150�
25�
1
2
0
0
REV 0.91
15
30
45
60
Qg , Total Gate Charge(nC)
0.1
75
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-To-Drain Voltage(V)
Feb-23-2012
4 -33
Single
N-channel
MOSFET
N-Channel
Enhancement
Mode
NIKO-SEM
Field
Effect Transistor
ELM3DK512A
Safe Operating Area
64
Power(W)
100
ID , Drain Current(A)
80
10
1ms
Operation in This
Area is Limited by
RDS(ON)
0.01
10ms
0.1
Single Pulse
R�JA =50 C/W
TA=25C
48
32
100ms
NOTE :
1.VGS= 10V
2.TA=25C
3.R�JA = 50 C/W
4.Single Pulse
0.1
PDFN 5x6P
Halogen-Free & Lead-Free
Single Pulse Maximum Power Dissipation
1000
1
PK512BA
16
DC
1
10
VDS, Drain-To-Source Voltage(V)
0
0.001
100
0.01
0.1
1
Single Pulse Time(s)
10
100
Transient Thermal Response Curve
Transient Thermal Resistance
r(t) , Normalized Effective
10
1
Duty cycle=0.5
Notes
0.2
0.1
0.1
0.05
1.Duty cycle, D= t1 / t2
2.RthJA = 50 �/W
3.TJ-TA = P*RthJA(t)
4.RthJA(t) = r(t)*RthJA
0.02
0.01
single pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
T1 , Square Wave Pulse Duration[sec]
REV 0.91
4- 4
4
Feb-23-2012
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