elm3dk502a

Single N-channel MOSFET
ELM3DK502A-S
■General description
■Features
ELM3DK502A-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
■Maximum absolute ratings
Parameter
Vds=30V
Id=10A
Rds(on) < 10.5mΩ (Vgs=10V)
Rds(on) < 15.0mΩ (Vgs=4.5V)
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
30
V
Drain-source voltage
Symbol
Vds
Gate-source voltage
Vgs
±20
V
Id
10
8
A
Idm
Ias
Eas
120
24
28
A
A
mJ
Ta=25°C
Ta=70°C
Continuous drain current
Pulsed drain current
Avalanche current
Avalanche energy
L=0.1mH
Tc=25°C
Tc=70°C
Power dissipation
Junction and storage temperature range
2.0
1.3
-55 to 150
Pd
Tj, Tstg
4
W
°C
■Thermal characteristics
Parameter
Maximum junction-to-case
Symbol
Rθjc
Maximum junction-to-ambient
Rθja
■Pin configuration
PDFN-5×6(TOP VIEW)
8
•
1
7
2
6
3
5
4
Pin No.
1
Pin name
SOURCE
2
3
4
SOURCE
SOURCE
GATE
5
6
7
DRAIN
DRAIN
DRAIN
8
DRAIN
4- 1
Typ.
Max.
4
Unit
°C/W
Note
60
°C/W
5
■Circuit
D
G
S
Single N-channel MOSFET
ELM3DK502A-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Gate threshold voltage
Static drain-source on-resistance
Condition
Vds=20V, Vgs=0V, Ta=55°C
10
Vds=0V, Vgs=±20V
Gfs
Vds=5V, Id=20A
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Vsd
Is
If=20A, Vgs=0V
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
Total gate charge (Vgs=4.5V)
Gate-source charge
Qg
Qgs
V
1
Vgs(th) Vds=Vgs, Id=250μA
Vgs=10V, Id=20A
Rds(on)
Vgs=4.5V, Id=15A
Rg
30
Vds=24V, Vgs=0V
Forward transconductance
Gate resistance
SWITCHING PARAMETERS
Total gate charge (Vgs=10V)
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
1.3
1.6
8.9
μA
±100
nA
3.0
10.5
V
12.4 15.0
mΩ
1
S
1
V
A
1
3
70
1.2
41
580
130
71
pF
pF
pF
Vgs=0V, Vds=0V, f=1MHz
4.1
Ω
Vds=15V, Id=20A
Vgs=10V
13.0
7.0
3.3
nC
nC
nC
2
2
2
Vgs=0V, Vds=15V
f=1MHz
Gate-drain charge
Turn-on delay time
Qgd
td(on)
4.0
15
nC
ns
2
2
Turn-on rise time
Turn-off delay time
tr
10
ns
2
31
ns
2
10
14
ns
ns
2
3
nC
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
Vds=15V, Id=20A
td(off) Vgs=10V, Rgen=6Ω
tf
trr
Qrr
If=20A, dIf/dt=100A/μs
NOTE :
1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%.
2. Independent of operating temperature.
3. Package limitation current is 30A.
4. Pulsed width limited by maximum junction temperature.
5. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
4- 2
Single N-channel MOSFET
N-Channel
Enhancement Mode
PK502BA
ELM3DK502A-S
PDFN 5x6P
Field Effect Transistor
■Typical electrical and thermal characteristics
Halogen-Free & Lead-Free
NIKO-SEM
Output Characteristics
VGS=10V
VGS=9V
VGS=8V
VGS=7V
VGS=6V
VGS=5V
VGS=4.5V
32
VGS=3.5V
24
16
VGS=3V
8
0
0
1
2
3
4
5
32
24
16
25�
8
125�
0
3
4
5
Capacitance Characteristic
1.8
700
1.6
600
1.4
1.2
1.0
0.8
VGS=10V
ID=20A
0.6
-25
0
25
50
75
100
125
CISS
500
400
300
200
COSS
100
0
150
CRSS
0
5
10
15
20
25
30
VDS, Drain-To-Source Voltage(V)
TJ , Junction Temperature(C)
Source-Drain Diode Forward Voltage
Gate charge Characteristics
100
10
VDS=15V
ID=20A
8
IS , Source Current(A)
VGS , Gate-To-Source Voltage(V)
2
On-Resistance VS Temperature
800
-50
1
VGS, Gate-To-Source Voltage(V)
2.0
0.4
0
-20�
VDS, Drain-To-Source Voltage(V)
C , Capacitance(pF)
Normalized Drain to Source
ON-Resistance
Transfer Characteristics
40
ID, Drain-To-Source Current(A)
ID, Drain-To-Source Current(A)
40
6
4
2
0
0
3
6
9
12
150�
25�
1
0.1
15
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-To-Drain Voltage(V)
Qg , Total Gate Charge(nC)
REV 0.9
10
4- 3
3
Jan-30-2012
Single N-channel MOSFET
PK502BA
N-Channel Enhancement Mode
ELM3DK502A-S
Field Effect Transistor
NIKO-SEM
PDFN 5x6P
Halogen-Free & Lead-Free
Safe Operating Area
Single Pulse Maximum Power Dissipation
40
100
Single Pulse
R�JA = 60 C/W
TA=25C
ID , Drain Current(A)
32
1ms
1
Operation in This
Area is Limited
by RDS(ON)
0.1
0.01
Power(W)
10
10ms
100ms
NOTE :
1.VGS= 10V
2.TA=25C
3.R�JA = 60 C/W
4.Single Pulse
0.1
10
16
8
DC
1
24
0
0.001
100
0.01
VDS, Drain-To-Source Voltage(V)
Transient Thermal Resistance
1
10
100
Single Pulse Time(s)
Transient Thermal Response Curve
10
r(t) , Normalized Effective
0.1
1
Duty cycle=0.5
0.2
0.1
Notes
0.1
0.05
1.Duty cycle, D= t1 / t2
2.RthJA = 60 �/W
3.TJ-TA = P*RthJA(t)
4.RthJA(t) = r(t)*RthJA
0.02
0.01
single pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
T1 , Square Wave Pulse Duration[sec]
REV 0.9
4- 4
4
Jan-30-2012
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