Data Sheet

PMGD290UCEA
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
28 March 2014
Product data sheet
1. General description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very
small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
•
•
•
•
Very fast switching
Trench MOSFET technology
2 kV ESD protection
AEC-Q101 qualified
3. Applications
•
•
•
•
•
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
Automotive applications
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VGS = 4.5 V; ID = 500 mA; Tj = 25 °C
-
290
380
mΩ
VGS = -4.5 V; ID = -400 mA; Tj = 25 °C
-
670
850
mΩ
Tj = 25 °C
-
-
20
V
-8
-
8
V
-
-
725
mA
-
-
-20
V
TR1 (N-channel), Static characteristics
RDSon
drain-source on-state
resistance
TR2 (P-channel), Static characteristics
RDSon
drain-source on-state
resistance
TR1 (N-channel)
VDS
drain-source voltage
VGS
gate-source voltage
ID
drain current
VGS = 4.5 V; Tamb = 25 °C
[1]
TR2 (P-channel)
VDS
drain-source voltage
Tj = 25 °C
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PMGD290UCEA
NXP Semiconductors
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
Symbol
Parameter
VGS
gate-source voltage
ID
drain current
[1]
Conditions
VGS = -4.5 V; Tamb = 25 °C
[1]
Min
Typ
Max
Unit
-8
-
8
V
-
-
-500
mA
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm .
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
S1
source TR1
2
G1
gate TR1
3
D2
drain TR2
4
S2
source TR2
5
G2
gate TR2
6
D1
drain TR1
Simplified outline
6
5
Graphic symbol
D2
D1
4
G1
1
2
G2
3
TSSOP6 (SOT363)
S1
S2
017aaa262
6. Ordering information
Table 3.
Ordering information
Type number
Package
PMGD290UCEA
Name
Description
Version
TSSOP6
plastic surface-mounted package; 6 leads
SOT363
7. Marking
Table 4.
Marking codes
Type number
Marking code
[1]
PMGD290UCEA
YD%
[1]
% = placeholder for manufacturing site code
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Tj = 25 °C
-
20
V
-8
8
V
TR1 (N-channel)
VDS
drain-source voltage
VGS
gate-source voltage
PMGD290UCEA
Product data sheet
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28 March 2014
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2 / 21
PMGD290UCEA
NXP Semiconductors
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
Symbol
Parameter
Conditions
ID
drain current
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; Tamb = 100 °C
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Min
Max
Unit
[1]
-
725
mA
[1]
-
450
mA
-
3
A
[2]
-
280
mW
[1]
-
320
mW
-
990
mW
Tsp = 25 °C
TR1 (N-channel), Source-drain diode
IS
source current
Tamb = 25 °C
[1]
-
370
mA
HBM
[3]
-
2000
V
-
-20
V
-8
8
V
TR1 N-channel), ESD maximum rating
VESD
electrostatic discharge voltage
TR2 (P-channel)
VDS
drain-source voltage
VGS
gate-source voltage
ID
drain current
Tj = 25 °C
VGS = -4.5 V; Tamb = 25 °C
[1]
-
-500
mA
VGS = -4.5 V; Tamb = 100 °C
[1]
-
-320
mA
-
-2
A
[2]
-
280
mW
[1]
-
320
mW
-
990
mW
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tsp = 25 °C
TR2 (P-channel), Source-drain diode
IS
source current
Tamb = 25 °C
[1]
-
-370
mA
electrostatic discharge voltage
HBM
[3]
-
2000
V
Ptot
total power dissipation
Tamb = 25 °C
[2]
-
445
mW
Tj
junction temperature
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
TR2 (P-channel), ESD maximum rating
VESD
Per device
[1]
[2]
[3]
PMGD290UCEA
Product data sheet
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm .
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard
footprint.
Measured between all pins.
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3 / 21
PMGD290UCEA
NXP Semiconductors
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
017aaa123
120
017aaa124
120
Pder
(%)
Ider
(%)
80
80
40
40
0
- 75
Fig. 1.
- 25
25
75
125
Tj (°C)
0
- 75
175
Normalized total power dissipation as a
function of junction temperature
Fig. 2.
- 25
25
75
125
Tj (°C)
175
Normalized continuous drain current as a
function of junction temperature
aaa-007202
10
Limit RDSon = VDS/ID
ID
(A)
1
tp = 1 ms
10-1
10-2
10-1
DC; Tsp = 25 °C
tp = 10 ms
DC; Tamb = 25 °C;
drain mounting pad 1 cm2
tp = 100 ms
1
10
VDS (V)
102
IDM = single pulse
Fig. 3.
TR1 (N-channel): safe operating area; junction to ambient; continuous and peak drain currents as a
function of drain-source voltage
PMGD290UCEA
Product data sheet
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28 March 2014
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4 / 21
PMGD290UCEA
NXP Semiconductors
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
aaa-007203
-10
Limit RDSon = VDS/ID
ID
(A)
-1
tp = 1 ms
-10-1
-10-2
-10-1
DC; Tsp = 25 °C
tp = 10 ms
DC; Tamb = 25 °C;
drain mounting pad 1 cm2
tp = 100 ms
-1
-10
-102
VDS (V)
IDM = single pulse
Fig. 4.
TR2 (P-channel): safe operating area; junction to ambient; continuous and peak drain currents as a
function of drain-source voltage
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
[1]
-
390
445
K/W
[2]
-
340
390
K/W
-
-
130
K/W
[1]
-
390
445
K/W
[2]
-
340
390
K/W
-
-
130
K/W
-
-
300
K/W
TR1 (N-channel)
Rth(j-a)
Rth(j-sp)
thermal resistance
from junction to
ambient
in free air
thermal resistance
from junction to solder
point
TR2 (P-channel)
Rth(j-a)
Rth(j-sp)
thermal resistance
from junction to
ambient
in free air
thermal resistance
from junction to solder
point
Per device
Rth(j-a)
thermal resistance
from junction to
ambient
[1]
[2]
PMGD290UCEA
Product data sheet
in free air
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard
footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm .
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PMGD290UCEA
NXP Semiconductors
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
017aaa034
103
duty cycle = 1
Zth(j-a)
(K/W)
0.5
0.25
102
10
0.75
0.33
0.2
0.1
0.05
0
0.02
0.01
1
10- 3
10- 2
10- 1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 5.
TR1: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa035
103
duty cycle = 1
Zth(j-a)
(K/W)
0.5
102
10
0.25
0.75
0.33
0.2
0.1
0.05
0
0.02
0.01
1
10- 3
10- 2
10- 1
1
10
102
tp (s)
103
2
FR4 PCB, mounting pad for drain 1 cm .
Fig. 6.
TR1: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMGD290UCEA
Product data sheet
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6 / 21
PMGD290UCEA
NXP Semiconductors
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
017aaa034
103
duty cycle = 1
Zth(j-a)
(K/W)
0.5
0.25
102
10
0.75
0.33
0.2
0.1
0.05
0
0.02
0.01
1
10- 3
10- 2
10- 1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 7.
TR2: transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa035
103
duty cycle = 1
Zth(j-a)
(K/W)
0.5
102
10
0.25
0.75
0.33
0.2
0.1
0.05
0
0.02
0.01
1
10- 3
10- 2
10- 1
FR4 PCB, mounting pad for drain 1 cm
Fig. 8.
1
10
102
tp (s)
103
2
TR2: transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMGD290UCEA
Product data sheet
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7 / 21
PMGD290UCEA
NXP Semiconductors
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
TR1 (N-channel), Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
20
-
-
V
VGSth
gate-source threshold
voltage
ID = 250 µA; VDS = VGS; Tj = 25 °C
0.5
0.75
0.95
V
IDSS
drain leakage current
VDS = 20 V; VGS = 0 V; Tj = 25 °C
-
-
1
µA
VDS = 20 V; VGS = 0 V; Tj = 150 °C
-
-
10
µA
VGS = 8 V; VDS = 0 V;
-
-
10
µA
-
-
-10
µA
VGS = 4.5 V; ID = 500 mA; Tj = 25 °C
-
290
380
mΩ
VGS = 4.5 V; ID = 500 mA; Tj = 150 °C
-
460
610
mΩ
VGS = 2.5 V; ID = 200 mA; Tj = 25 °C
-
420
620
mΩ
VGS = 1.8 V; ID = 10 mA; Tj = 25 °C
-
0.6
1.1
Ω
VDS = 10 V; ID = 200 mA; Tj = 25 °C
-
1.6
-
S
IGSS
gate leakage current
-40 °C < Tj < 150 °C
VGS = -8 V; VDS = 0 V;
-40 °C < Tj < 150 °C
RDSon
gfs
drain-source on-state
resistance
transfer conductance
TR1 (N-channel), Dynamic characteristics
QG(tot)
total gate charge
VDS = 10 V; ID = 500 mA; VGS = 4.5 V;
-
0.45
0.68
nC
QGS
gate-source charge
Tj = 25 °C
-
0.15
-
nC
QGD
gate-drain charge
-
0.15
-
nC
Ciss
input capacitance
VDS = 10 V; f = 1 MHz; VGS = 0 V;
-
55
83
pF
Coss
output capacitance
Tj = 25 °C
-
15
-
pF
Crss
reverse transfer
capacitance
-
7
-
pF
td(on)
turn-on delay time
VDS = 10 V; RL = 250 Ω; VGS = 4.5 V;
-
6
12
ns
tr
rise time
RG(ext) = 6 Ω; Tj = 25 °C
-
4
-
ns
td(off)
turn-off delay time
-
86
172
ns
tf
fall time
-
31
-
ns
IS = 300 mA; VGS = 0 V; Tj = 25 °C
0.48
0.77
1.2
V
ID = -250 µA; VGS = 0 V; Tj = 25 °C
-20
-
-
V
TR1 (N-channel), Source-drain diode characteristics
VSD
source-drain voltage
TR2 (P-channel), Static characteristics
V(BR)DSS
drain-source
breakdown voltage
PMGD290UCEA
Product data sheet
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8 / 21
PMGD290UCEA
NXP Semiconductors
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VGSth
gate-source threshold
voltage
ID = -250 µA; VDS = VGS; Tj = 25 °C
-0.5
-0.8
-1.3
V
IDSS
drain leakage current
VDS = -20 V; VGS = 0 V; Tj = 25 °C
-
-
-1
µA
VDS = -20 V; VGS = 0 V; Tj = 150 °C
-
-
-10
µA
VGS = 8 V; VDS = 0 V;
-
-
10
µA
-
-
-10
µA
VGS = -4.5 V; ID = -400 mA; Tj = 25 °C
-
670
850
mΩ
VGS = -4.5 V; ID = -400 mA; Tj = 150 °C
-
1.1
1.4
Ω
VGS = -2.5 V; ID = -200 mA; Tj = 25 °C
-
1.2
1.5
Ω
VGS = -1.8 V; ID = -10 mA; Tj = 25 °C
-
1.8
2.8
Ω
VDS = -10 V; ID = -200 mA; Tj = 25 °C
-
610
-
mS
IGSS
gate leakage current
-40 °C < Tj < 150 °C
VGS = -8 V; VDS = 0 V;
-40 °C < Tj < 150 °C
RDSon
gfs
drain-source on-state
resistance
transfer conductance
TR2 (P-channel), Dynamic characteristics
QG(tot)
total gate charge
VDS = -10 V; ID = -400 mA;
-
0.76
1.14
nC
QGS
gate-source charge
VGS = -4.5 V; Tj = 25 °C
-
0.28
-
nC
QGD
gate-drain charge
-
0.18
-
nC
Ciss
input capacitance
VDS = -10 V; f = 1 MHz; VGS = 0 V;
-
58
87
pF
Coss
output capacitance
Tj = 25 °C
-
21
-
pF
Crss
reverse transfer
capacitance
-
12
-
pF
td(on)
turn-on delay time
VDS = -10 V; RL = 250 Ω; VGS = -4.5 V;
-
18
36
ns
tr
rise time
RG(ext) = 6 Ω; Tj = 25 °C
-
30
-
ns
td(off)
turn-off delay time
-
80
160
ns
tf
fall time
-
72
-
ns
-0.48
-0.84
-1.2
V
TR2 (P-channel), Source-drain diode characteristics
VSD
source-drain voltage
PMGD290UCEA
Product data sheet
IS = -300 mA; VGS = 0 V; Tj = 25 °C
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PMGD290UCEA
NXP Semiconductors
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
017aaa351
0.7
ID
(A)
0.6
4.5 V
2.5 V
1.8 V
017aaa352
10- 3
VGS = 1.6 V
ID
(A)
0.5
10- 4
0.4
1.4 V
0.3
(1)
(2)
0.50
0.75
(3)
10- 5
0.2
1.2 V
0.1
1.0 V
0.0
Fig. 9.
0
1
2
3
VDS (V)
10- 6
0.00
4
0.25
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
TR1; Output characteristics: drain current as a
function of drain-source voltage; typical values
(1) minimum values
(2) typical values
(3) maximum values
1.00
1.25
VGS (V)
Fig. 10. TR1; Sub-threshold drain current as a function
of gate-source voltage
017aaa353
2.0
RDSon
(Ω)
(1)
(2)
017aaa354
2.0
RDSon
(Ω)
(3)
1.5
1.5
1.0
1.0
(4)
0.5
(1)
0.5
(5)
(6)
0.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
ID (A)
(2)
0.0
0.7
0
1
Tj = 25 °C
ID = 400 mA
(1) VGS = 1.3 V
(1) Tj = 150 °C
(2) VGS = 1.4 V
(2) Tj = 25 °C
(3) VGS = 1.6 V
2
3
4
VGS (V)
5
Fig. 12. TR1; Drain-source on-state resistance as a
function of gate-source voltage; typical values
(4) VGS = 1.8 V
(5) VGS = 2.5 V
(6) VGS = 4.5 V
Fig. 11. TR1; Drain-source on-state resistance as a
function of drain current; typical values
PMGD290UCEA
Product data sheet
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10 / 21
PMGD290UCEA
NXP Semiconductors
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
017aaa355
0.7
ID
(A)
0.6
017aaa356
1.75
a
1.50
0.5
1.25
0.4
0.3
1.00
0.2
(2)
(1)
0.75
0.1
0.0
0.0
0.5
1.0
1.5
0.50
-60
2.0
2.5
VGS (V)
VDS > ID × RDSon
0
60
120
Tj (°C)
180
Fig. 14. TR1; Normalized drain-source on-state
resistance as a function of junction
temperature; typical values
(1) Tj = 25 °C
(2) Tj = 150 °C
Fig. 13. TR1; Transfer characteristics: drain current as a
function of gate-source voltage; typical values
017aaa357
1.25
017aaa358
102
VGS(th)
(V)
(1)
1.00
C
(pF)
(1)
0.75
(2)
(2)
10
0.50
(3)
(3)
0.25
0.00
-60
0
60
120
Tj (°C)
1
10- 1
180
1
ID = 0.25 mA; VDS = VGS
f = 1 MHz; VGS = 0 V
(1) maximum values
(2) typical values
(3) minimum values
(1) Ciss
Product data sheet
VDS (V)
102
(2) Coss
(3) Crss
Fig. 15. TR1; Gate-source threshold voltage as a
function of junction temperature
PMGD290UCEA
10
Fig. 16. TR1; Input, output and reverse transfer
capacitances as a function of drain-source
voltage; typical values
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11 / 21
PMGD290UCEA
NXP Semiconductors
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
017aaa359
5
VDS
VGS
(V)
ID
4
VGS(pl)
3
VGS(th)
VGS
2
QGS1
QGS2
QGS
1
QGD
QG(tot)
017aaa137
0
0.0
0.1
0.2
0.3
Fig. 18. Gate charge waveform definitions
0.4
0.5
QG (nC)
ID = 0.5 A; VDS = 10 V; Tamb = 25 °C
Fig. 17. TR1; Gate-source voltage as a function of gate
charge; typical values
017aaa360
0.7
IS
(A)
0.6
017aaa363
-0.5
-4.5 V
ID
(A)
-2.5 V
-2.0 V
-0.4
VGS = -1.8 V
0.5
-0.3
0.4
(1)
(2)
-1.6 V
0.3
-0.2
0.2
0.1
0.0
0.0
-1.4 V
-0.1
0.2
0.4
0.6
0.0
0.8
1.0
VSD (V)
VGS = 0 V
0
-1
-2
-3
VDS (V)
-4
Tj = 25 °C
(1) Tj = 150 °C
Fig. 20. TR2; Output characteristics: drain current as a
function of drain-source voltage; typical values
(2) Tj = 25 °C
Fig. 19. TR1; Source current as a function of sourcedrain voltage; typical values
PMGD290UCEA
Product data sheet
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12 / 21
PMGD290UCEA
NXP Semiconductors
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
017aaa364
-10-3
017aaa365
4
RDSon
(Ω)
ID
(A)
(1)
(2)
(3)
3
-10-4
(1)
(2)
(3)
2
(4)
-10-5
1
-10-6
0.0
-0.5
-1.0
VGS (V)
0
0.0
-1.5
(5)
-0.1
-0.2
Tj = 25 °C; VDS = -5 V
Tj = 25 °C
(1) minimum values
(2) typical values
(3) maximum values
(1) VGS = -1.5 V
-0.3
-0.4
ID (A)
-0.5
(2) VGS = -1.8 V
(3) VGS = -2.0 V
(4) VGS = -2.5 V
Fig. 21. TR2; Sub-threshold drain current as a function
of gate-source voltage
(5) VGS = -4.5 V
Fig. 22. TR2; Drain-source on-state resistance as a
function of drain current; typical values
017aaa366
4
017aaa367
-0.5
ID
(A)
RDSon
(Ω)
-0.4
3
-0.3
2
-0.2
(1)
(2)
1
(1)
-0.1
(2)
0
0
-1
-2
-3
-4
VGS (V)
0.0
0.0
-5
-0.5
ID = -400 mA
VDS > ID × RDSon
(1) Tj = 150 °C
(1) Tj = 25 °C
(2) Tj = 25 °C
(2) Tj = 150 °C
Fig. 23. TR2; Drain-source on-state resistance as a
function of gate-source voltage; typical values
PMGD290UCEA
Product data sheet
-1.0
-1.5
VGS (V)
-2.0
Fig. 24. TR2; Transfer characteristics: drain current as a
function of gate-source voltage; typical values
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NXP Semiconductors
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
017aaa368
2.0
017aaa369
-1.5
a
(1)
VGS(th)
(V)
1.5
-1.0
(2)
1.0
(3)
-0.5
0.5
0.0
-60
0
60
120
Tj (°C)
0.0
-60
180
0
60
120
Tj (°C)
180
ID = -0.25 mA; VDS = VGS
Fig. 25. TR2; Normalized drain-source on-state
resistance as a function of ambient
temperature; typical values
(1) maximum values
(2) typical values
(3) minimum values
Fig. 26. TR2; Gate-source threshold voltage as a
function of junction temperature
017aaa370
102
(1)
C
(pF)
017aaa371
-5
VGS
(V)
-4
(2)
(3)
-3
10
-2
-1
1
-10-1
-1
-10
VDS (V)
0
0.0
-102
f = 1 MHz; VGS = 0 V
0.2
0.4
0.6
QG (nC)
0.8
ID = -0.4 A; VDD = -10 V; Tamb = 25 °C
(1) Ciss
Fig. 28. TR2; Gate-source voltage as a function of gate
charge; typical values
(2) Coss
(3) Crss
Fig. 27. TR2; Input, output and reverse transfer
capacitances as a function of drain-source
voltage; typical values
PMGD290UCEA
Product data sheet
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20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
017aaa372
-0.5
VDS
IS
(A)
ID
-0.4
VGS(pl)
-0.3
VGS(th)
VGS
-0.2
QGS1
QGS2
QGS
QGD
QG(tot)
(1)
-0.1
(2)
017aaa137
0.0
0.0
Fig. 29. Gate charge waveform definitions
-0.2
-0.4
-0.6
-0.8
-1.0
VSD (V)
VGS = 0 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
Fig. 30. TR2; Source current as a function of sourcedrain voltage; typical values
PMGD290UCEA
Product data sheet
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20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
11. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig. 31. Duty cycle definition
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
12. Package outline
2.2
1.8
6
2.2 1.35
2.0 1.15
1.1
0.8
5
4
2
3
0.45
0.15
pin 1
index
1
0.65
1.3
0.3
0.2
0.25
0.10
Dimensions in mm
06-03-16
Fig. 32. Package outline TSSOP6 (SOT363)
PMGD290UCEA
Product data sheet
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20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
13. Soldering
2.65
solder lands
2.35 1.5
0.4 (2×)
0.6 0.5
(4×) (4×)
solder resist
solder paste
0.5
(4×)
0.6
(2×)
occupied area
0.6
(4×)
Dimensions in mm
1.8
sot363_fr
Fig. 33. Reflow soldering footprint for TSSOP6 (SOT363)
1.5
solder lands
0.3 2.5
4.5
1.5
solder resist
occupied area
Dimensions in mm
1.3
preferred transport
direction during soldering
1.3
2.45
5.3
sot363_fw
Fig. 34. Wave soldering footprint for TSSOP6 (SOT363)
PMGD290UCEA
Product data sheet
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14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMGD290UCEA v.3
20140328
Product data sheet
-
PMGD290UCEA v.2
Modifications:
•
PMGD290UCEA v.2
20130418
Product data sheet
-
PMGD290UCEA v.1
PMGD290UCEA v.1
20130415
Product data sheet
-
-
PMGD290UCEA
Product data sheet
Table 7: IGSS parameter unit corrected
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In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
15. Legal information
15.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
15.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
15.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
PMGD290UCEA
Product data sheet
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the NXP Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
All information provided in this document is subject to legal disclaimers.
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20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, ICODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight,
MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug,
TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PMGD290UCEA
Product data sheet
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16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................2
9
Thermal characteristics .........................................5
10
Characteristics ....................................................... 8
11
11.1
Test information ................................................... 16
Quality information ............................................. 16
12
Package outline ................................................... 16
13
Soldering .............................................................. 17
14
Revision history ................................................... 18
15
15.1
15.2
15.3
15.4
Legal information .................................................19
Data sheet status ............................................... 19
Definitions ...........................................................19
Disclaimers .........................................................19
Trademarks ........................................................ 20
© NXP Semiconductors N.V. 2014. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 28 March 2014
PMGD290UCEA
Product data sheet
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