60 V N-channel Trench MOSFET

DF
N
20
20
MD
-6
PMPB40SNA
60 V N-channel Trench MOSFET
29 October 2013
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
2. Features and benefits
•
•
•
•
•
Trench MOSFET technology
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
Tin-plated 100 % solderable side pads for optical solder inspection
AEC-Q101 qualified
3. Applications
•
•
•
•
Relay driver
High-speed line driver
Low-side load switch
Switching circuits
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
60
V
VGS
gate-source voltage
-20
-
20
V
ID
drain current
VGS = 10 V; Tsp = 25 °C
-
-
12.9
A
VGS = 10 V; ID = 4.8 A; Tj = 25 °C
-
34
43
mΩ
Static characteristics
RDSon
drain-source on-state
resistance
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PMPB40SNA
NXP Semiconductors
60 V N-channel Trench MOSFET
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
D
drain
2
D
drain
3
G
gate
4
S
source
5
D
drain
6
D
drain
7
D
drain
8
S
source
Simplified outline
1
Graphic symbol
D
6
7
2
3
8
5
G
4
S
017aaa253
Transparent top view
DFN2020MD-6 (SOT1220)
6. Ordering information
Table 3.
Ordering information
Type number
Package
Name
PMPB40SNA
Description
Version
DFN2020MD-6 DFN2020MD-6: plastic thermal enhanced ultra thin small outline
package; no leads; 6 terminals
SOT1220
7. Marking
Table 4.
Marking codes
Type number
Marking code
PMPB40SNA
1E
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
60
V
VGS
gate-source voltage
-20
20
V
ID
drain current
-
12.9
A
IDM
peak drain current
PMPB40SNA
Product data sheet
VGS = 10 V; Tsp = 25 °C
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
[1]
-
6.8
A
VGS = 10 V; Tamb = 100 °C
[1]
-
3
A
-
23
A
Tamb = 25 °C; single pulse; tp ≤ 10 µs
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PMPB40SNA
NXP Semiconductors
60 V N-channel Trench MOSFET
Symbol
Parameter
Conditions
Min
Max
Unit
EDS(AL)S
non-repetitive drain-source
avalanche energy
Tj(init) = 25 °C; ID = 0.6 A; DUT in
-
19
mJ
total power dissipation
Tamb = 25 °C
[1]
-
1.7
W
Tamb = 25 °C; t ≤ 5 s
[1]
-
3.5
W
-
12.5
W
Ptot
avalanche (unclamped)
Tsp = 25 °C
Tj
junction temperature
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
-
1.7
A
Source-drain diode
IS
source current
[1]
Tamb = 25 °C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
2
drain 6 cm .
017aaa123
120
Pder
(%)
Ider
(%)
80
80
40
40
0
- 75
Fig. 1.
017aaa124
120
- 25
25
75
125
Tj (°C)
Normalized total power dissipation as a
function of junction temperature
PMPB40SNA
Product data sheet
0
- 75
175
Fig. 2.
- 25
75
125
Tj (°C)
175
Normalized continuous drain current as a
function of junction temperature
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25
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3 / 15
PMPB40SNA
NXP Semiconductors
60 V N-channel Trench MOSFET
aaa-005311
102
ID
(A)
Limit RDSon = VDS/ID
10
tp = 100 µs
tp = 1 ms
1
tp = 10 ms
DC; Tsp = 25 °C
10-1
DC; Tamb = 25 °C;
drain mounting pad 6 cm2
10-2
10-2
10-1
1
tp = 100 ms
102
10
103
VDS (V)
IDM = single pulse
Fig. 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
PMPB40SNA
Product data sheet
Min
Typ
Max
Unit
[1]
-
235
270
K/W
[2]
-
67
74
K/W
[3]
-
33
36
K/W
-
5
10
K/W
[1]
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm , t ≤ 5 s
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
2
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PMPB40SNA
NXP Semiconductors
60 V N-channel Trench MOSFET
017aaa542
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
102
0.5
0.33
0.25
0.2
0.1
10
0.05
0.02
0.01
0
1
10-3
10-2
10-1
1
102
10
103
tp (s)
FR4 PCB, standard footprint
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa543
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
10
0.25
0.2
0.1
0.05
0.02
0.01
0
1
10-3
10-2
10-1
FR4 PCB, mounting pad for drain 6 cm
Fig. 5.
1
102
10
103
tp (s)
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
60
-
-
V
VGSth
gate-source threshold
voltage
ID = 250 µA; VDS = VGS; Tj = 25 °C
1
1.7
3
V
IDSS
drain leakage current
VDS = 60 V; VGS = 0 V; Tj = 25 °C
-
-
1
µA
VDS = 60 V; VGS = 0 V; Tj = 150 °C
-
-
20
µA
PMPB40SNA
Product data sheet
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PMPB40SNA
NXP Semiconductors
60 V N-channel Trench MOSFET
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IGSS
gate leakage current
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
-
100
nA
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
-
-100
nA
VGS = 10 V; ID = 4.8 A; Tj = 25 °C
-
34
43
mΩ
VGS = 10 V; ID = 4.8 A; Tj = 150 °C
-
60
75
mΩ
VGS = 4.5 V; ID = 3.2 A; Tj = 25 °C
-
40
50
mΩ
RDSon
drain-source on-state
resistance
gfs
forward
transconductance
VDS = 5 V; ID = 4.8 A; Tj = 25 °C
-
19
-
S
RG
gate resistance
f = 1 MHz
-
1.1
-
Ω
Dynamic characteristics
QG(tot)
total gate charge
VDS = 30 V; ID = 4.8 A; VGS = 10 V;
-
12.1
24
nC
QGS
gate-source charge
Tj = 25 °C
-
1.4
-
nC
QGD
gate-drain charge
-
2.1
-
nC
Ciss
input capacitance
VDS = 30 V; f = 1 MHz; VGS = 0 V;
-
612
-
pF
Coss
output capacitance
Tj = 25 °C
-
78
-
pF
Crss
reverse transfer
capacitance
-
52
-
pF
td(on)
turn-on delay time
VDS = 30 V; ID = 4.8 A; VGS = 4.5 V;
-
9
-
ns
tr
rise time
RG(ext) = 6 Ω; Tj = 25 °C
-
23
-
ns
td(off)
turn-off delay time
-
12
-
ns
tf
fall time
-
12
-
ns
-
0.9
1.2
V
Source-drain diode
VSD
source-drain voltage
IS = 1.7 A; VGS = 0 V; Tj = 25 °C
aaa-005312
25
10 V
ID
(A)
3.4 V
3.6 V
ID
(A)
4.5 V
20
aaa-005313
10-3
3.2 V
10-4
15
10
2.8 V
5
0
Fig. 6.
min
typ
max
3V
10-5
VGS = 2.6 V
0
1
2
3
4
VDS (V)
5
10-6
0
1
2
VGS (V)
3
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
Output characteristics: drain current as a
Fig. 7.
function of drain-source voltage; typical values
Subthreshold drain current as a function of
gate-source voltage
PMPB40SNA
Product data sheet
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PMPB40SNA
NXP Semiconductors
60 V N-channel Trench MOSFET
aaa-005314
100
RDSon
(mΩ)
2.7 V
80
2.9 V
2.8 V
3.1 V
3V
aaa-005315
120
RDSon
(mΩ)
3.3 V
3.2 V
80
60
Tj = 150 °C
4.5 V
40
40
VGS = 10 V
Tj = 25 °C
20
0
0
5
10
15
20
ID (A)
0
25
Tj = 25 °C
Fig. 8.
0
4
8
12
16
20
VGS (V)
ID = 5 A
Drain-source on-state resistance as a function
of drain current; typical values
Fig. 9.
aaa-005316
25
Drain-source on-state resistance as a function
of gate-source voltage; typical values
aaa-005317
2.0
ID
(A)
a
20
1.5
15
1.0
10
0.5
5
0
Tj = 150 °C
0
1
2
Tj = 25 °C
3
VGS (V)
0.0
-60
4
VDS > ID × RDSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
PMPB40SNA
Product data sheet
0
60
120
Tj (°C)
180
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
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PMPB40SNA
NXP Semiconductors
60 V N-channel Trench MOSFET
aaa-005318
4
aaa-005319
103
Ciss
VGS(th)
(V)
3
C
(pF)
max
Coss
102
2
typ
Crss
1
min
0
-60
0
60
120
Tj (°C)
10
10-1
180
ID = 0.25 mA; VDS = VGS
1
10
VDS (V)
102
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
aaa-005320
10
VDS
VGS
(V)
ID
8
VGS(pl)
6
VGS(th)
VGS
4
QGS1
QGS2
QGS
2
QGD
QG(tot)
017aaa137
0
0
5
10
QG (nC)
15
Fig. 15. Gate charge waveform definitions
ID = 5 A; VDS = 30 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
PMPB40SNA
Product data sheet
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PMPB40SNA
NXP Semiconductors
60 V N-channel Trench MOSFET
aaa-005321
20
IS
(A)
16
12
Tj = 150 °C
8
Tj = 25 °C
4
0
0.0
0.4
0.8
VDS (V)
1.2
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
11. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig. 17. Duty cycle definition
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PMPB40SNA
Product data sheet
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PMPB40SNA
NXP Semiconductors
60 V N-channel Trench MOSFET
12. Package outline
DFN2020MD-6: plastic thermal enhanced ultra thin small outline package; no leads;
6 terminals; body 2 x 2 x 0.65 mm
SOT1220
(8×)
pin 1
index area
B
E
A
X
D
A
A1
detail X
solderable lead
end protrusion
max. 0.02 mm (6×)
C
Lp
E2
J1
D2 3
4
2
5
e
J
bp (6×)
D1
e
1
v
E1
0
2 mm
scale
Dimensions (mm are the original dimensions)
Unit
A
A1
bp
min
0.25
nom
max 0.65 0.04 0.35
D
D1
D2
E
E1
E2
1.9
1.0
0.2
1.9
1.1
0.51
2.1
1.2
0.3
2.1
1.3
0.61
e
J
J1
0.65 0.27 0.64
Lp
0.2
0.3
v
y
y1
0.1
0.05
0.1
Note
1. Dimension A is including plating thickness.
Outline
version
A B
6
pin 1
index area
mm
y
y1 C
sot1220_po
References
IEC
JEDEC
JEITA
European
projection
Issue date
12-04-23
12-04-30
SOT1220
Fig. 18. Package outline DFN2020MD-6 (SOT1220)
PMPB40SNA
Product data sheet
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PMPB40SNA
NXP Semiconductors
60 V N-channel Trench MOSFET
13. Soldering
Footprint information for reflow soldering of DFN2020MD-6 package
0.33 (6×)
SOT1220
0.76
0.43 (6×)
0.66
0.53 (6×)
0.56
0.25 0.35 0.45
0.775
0.65
2.06
0.285
1.25
1.35
0.35 (6×)
1.05
0.25 (6×)
0.65
0.45 (6×)
0.9
1.1
1.2
0.935
0.935
2.5
solder land
solder land plus solder paste
solder paste deposit
solder resist
occupied area
Dimensions in mm
sot1220_fr
Fig. 19. Reflow soldering footprint for DFN2020MD-6 (SOT1220)
PMPB40SNA
Product data sheet
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PMPB40SNA
NXP Semiconductors
60 V N-channel Trench MOSFET
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMPB40SNA v.3
20131029
Product data sheet
-
PMPB40SNA v.2
Modifications:
•
PMPB40SNA v.2
20130702
Product data sheet
-
PMPB40SNA v.1
PMPB40SNA v.1
20120928
Product data sheet
-
-
PMPB40SNA
Product data sheet
Figure 8 corrected
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PMPB40SNA
NXP Semiconductors
60 V N-channel Trench MOSFET
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or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
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Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
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representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
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data sheet shall define the specification of the product as agreed between
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customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
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Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
PMPB40SNA
Product data sheet
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
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Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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NXP Semiconductors
60 V N-channel Trench MOSFET
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15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PMPB40SNA
Product data sheet
All information provided in this document is subject to legal disclaimers.
29 October 2013
© NXP N.V. 2013. All rights reserved
14 / 15
PMPB40SNA
NXP Semiconductors
60 V N-channel Trench MOSFET
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................2
9
Thermal characteristics .........................................4
10
Characteristics ....................................................... 5
11
11.1
Test information ..................................................... 9
Quality information ............................................... 9
12
Package outline ................................................... 10
13
Soldering .............................................................. 11
14
Revision history ................................................... 12
15
15.1
15.2
15.3
15.4
Legal information .................................................13
Data sheet status ............................................... 13
Definitions ...........................................................13
Disclaimers .........................................................13
Trademarks ........................................................ 14
© NXP N.V. 2013. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 29 October 2013
PMPB40SNA
Product data sheet
All information provided in this document is subject to legal disclaimers.
29 October 2013
© NXP N.V. 2013. All rights reserved
15 / 15