Datasheet Download

RSR025N05FRA
Nch 45V 2.5A Power MOSFET
Datasheet
AEC-Q101 Qualified
lOutline
VDSS
45V
RDS(on) (Max.)
100mW
ID
2.5A
PD
1.0W
TSMT3
(3)
(1)
(2)
lInner circuit
lFeatures
1) Low on - resistance.
(1) Gate
(2) Source
(3) Drain
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT3).
4) Pb-free lead plating ; RoHS compliant
*1 BODY DIODE
*2 ESD PROTECTION DIODE
lPackaging specifications
Packaging
Taping
Reel size (mm)
lApplication
DC/DC converters, Relay drive
Type
180
Tape width (mm)
Basic ordering unit (pcs)
8
3,000
Taping code
TL
Marking
ZF
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
45
V
Continuous drain current
ID *1
2.5
A
ID,pulse *2
10
A
Gate - Source voltage
VGSS
20
V
Avalanche energy, single pulse
EAS *3
4.8
mJ
PD *4
0.54
W
PD *5
1.0
W
Tj
150
°C
Tstg
-55 to +150
°C
Pulsed drain current
Power dissipation
Junction temperature
Range of storage temperature
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© 2012 ROHM Co., Ltd. All rights reserved.
1/11
2012.06 - Rev.B
Data Sheet
RSR025N05FRA
lThermal resistance
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Thermal resistance, junction - ambient
RthJA *4
-
-
125
°C/W
Thermal resistance, junction - ambient
RthJA *5
-
-
231
°C/W
lElectrical characteristics(Ta = 25°C)
Parameter
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Symbol
V(BR)DSS
Conditions
VGS = 0V, ID = 1mA
ΔV(BR)DSS ID = 1mA
ΔTj
referenced to 25°C
Values
Unit
Min.
Typ.
Max.
45
-
-
V
-
42
-
mV/°C
Zero gate voltage drain current
IDSS
VDS = 45V, VGS = 0V
-
-
1
mA
Gate - Source leakage current
IGSS
VGS = 20V, VDS = 0V
-
-
10
mA
Gate threshold voltage
VGS (th)
VDS = 10V, ID = 1mA
1.0
-
3.0
V
Gate threshold voltage
temperature coefficient
ΔV(GS)th
ΔTj
ID = 1mA
referenced to 25°C
-
-4.2
-
mV/°C
VGS=10V, ID=2.5A
-
70
100
VGS=4.5V, ID=2.5A
-
95
150
VGS=4.0V, ID=2.5A
-
105
160
VGS=10V, ID=2.5A, Tj=125°C
-
110
154
RG
f = 1MHz, open drain
-
7
-
W
gfs *6
VDS = 10V, ID = 2.5A
2.0
4.2
-
S
Static drain - source
on - state resistance
Gate input resistannce
Transconductance
RDS(on)
*6
mW
*1 Limited only by maximum temperature allowed.
*2 Pw  10ms, Duty cycle  1%
*3 L ⋍ 1mH, VDD = 25V, Rg = 25W, starting Tj = 25°C
*4 Mounted on a ceramic board (30×30×0.8mm)
*5 Mounted on a FR4 (12×20×0.8mm)
*6 Pulsed
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© 2012 ROHM Co., Ltd. All rights reserved.
2/11
2012.06 - Rev.B
Data Sheet
RSR025N05FRA
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min.
Typ.
Max.
Input capacitance
Ciss
VGS = 0V
-
260
-
Output capacitance
Coss
VDS = 10V
-
90
-
Reverse transfer capacitance
Crss
f = 1MHz
-
30
-
VDD ⋍ 25V, VGS = 10V
-
9
-
tr *6
ID = 1.25A
-
11
-
td(off) *6
RL = 20W
-
25
-
tf *6
RG = 10W
-
8
-
Turn - on delay time
Rise time
Turn - off delay time
Fall time
td(on) *6
Unit
pF
ns
lGate Charge characteristics(Ta = 25°C)
Parameter
Total gate charge
Symbol
Qg *6
Gate - Source charge
Qgs *6
Gate - Drain charge
Qgd *6
Conditions
Values
Min.
Typ.
Max.
VDD ⋍ 25V, ID = 2.5A
VGS = 5V
-
3.6
-
VDD ⋍ 25V, ID = 2.5A
VGS = 10V
-
6
12
-
1.5
-
-
0.8
-
VDD ⋍ 25V, ID = 2.5A
VGS = 5V
Unit
nC
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Parameter
Inverse diode continuous,
forward current
Forward voltage
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© 2012 ROHM Co., Ltd. All rights reserved.
Symbol
IS *1
VSD *6
Conditions
Values
Unit
Min.
Typ.
Max.
Ta = 25°C
-
-
0.8
A
VGS = 0V, Is = 2.5A
-
-
1.2
V
3/11
2012.06 - Rev.B
Data Sheet
RSR025N05FRA
lElectrical characteristic curves
Fig.2 Maximum Safe Operating Area
Fig.1 Power Dissipation Derating Curve
100
Operation in this area
is limited by RDS(on)
( VGS = 10V )
100
80
60
40
20
0
0
50
100
150
1
PW = 100μs
DC Operation
0.1
0.01
200
PW = 10ms
Ta=25ºC
Single Pulse
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
0.1
1
10
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Fig.4 Single Pulse Maxmum Power dissipation
10
1000
Ta=25ºC
Single Pulse
top
D=1
D=0.5
D=0.1
D=0.05
D=0.01
bottom Signle
0.1
0.01
0.001
0.0001
Rth(ch-a)=125ºC/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
Mounted on ceramic board
(30mm × 30mm × 0.8mm)
0.01
1
Peak Transient Power : P(W)
Ta=25ºC
Single Pulse
1
100
10
1
0.1
0.0001
100
0.01
1
100
Pulse Width : PW [s]
Pulse Width : PW [s]
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© 2012 ROHM Co., Ltd. All rights reserved.
100
Drain - Source Voltage : VDS [V]
Junction Temperature : Tj [°C]
Normalized Transient Thermal Resistance : r(t)
PW = 1ms
10
Drain Current : ID [A]
Power Dissipation : PD/PD max. [%]
120
4/11
2012.06 - Rev.B
Data Sheet
RSR025N05FRA
lElectrical characteristic curves
Fig.6 Avalanche Energy Derating Curve
vs Junction Temperature
Fig.5 Avalanche Current vs Inductive Load
120%
Starting Tch=25°C
VDD=25V
VGS=10V
RG=10W
Single Pulse
10
Avalanche Energy : EAS / EAS max. [%]
Avalanche Current : IAR [A]
100
1
0.1
0.01
0.01
0.1
1
10
100
100%
80%
60%
40%
20%
0%
0
Coil Inductance : L [mH]
Ta=25°C
pulsed
3
2
VGS=3.2V
1
VGS=3.0V
VGS=2.8V
0.2
125
150
175
0.4
0.6
0.8
Drain - Source Voltage : VDS [V]
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© 2012 ROHM Co., Ltd. All rights reserved.
3
VGS=3.2V
2
VGS=3.0V
1
0
1
Ta=25°C
pulsed
VGS=10.0V
VGS=4.5V
VGS=4.0V
4
VGS=3.6V
Drain Current : ID [A]
Drain Current : ID [A]
VGS=4.0
0
100
5
VGS=4.5
0
75
Fig.8 Typical Output Characteristics(II)
VGS=10.0
4
50
Junction Temperature : Tj [ºC]
Fig.7 Typical Output Characteristics(I)
5
25
VGS=2.8V
0
2
4
6
8
10
Drain - Source Voltage : VDS [V]
5/11
2012.06 - Rev.B
Data Sheet
RSR025N05FRA
Fig.9 Breakdown Voltage
vs. Junction Temperature
Fig.10 Typical Transfer Characteristics
10
80
VDS=10V
pulsed
VGS=0V
ID=1mA
pulsed
60
Drain Current : ID [A]
Drain - Source Breakdown Voltage : V(BR)DSS [V]
lElectrical characteristic curves
40
20
0
1
0.1
0.01
0.001
-50
0
50
100
150
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
0.0
0.5
Junction Temperature : Tj [°C]
Transconductance : gfs [S]
Gate Threshold Voltage : VGS(th) [V]
1
100
1
3.5
4.0
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
0.1
0.01
0.01
150
Junction Temperature : Tj [°C]
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© 2012 ROHM Co., Ltd. All rights reserved.
3.0
VDS=10V
pulsed
2
50
2.5
10
VDS=10V
ID=1mA
pulsed
0
2.0
Fig.12 Transconductance vs. Drain Current
3
-50
1.5
Gate - Source Voltage : VGS [V]
Fig.11 Gate Threshold Voltage
vs. Junction Temperature
0
1.0
0.1
1
10
Drain Current : ID [A]
6/11
2012.06 - Rev.B
Data Sheet
RSR025N05FRA
lElectrical characteristic curves
Fig.13 Drain CurrentDerating Curve
Fig.14 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Drain Current Dissipation
: ID/ID max. (%)
1.2
1
0.8
0.6
0.4
0.2
0
-25
0
25
50
75
100
125
150
300
250
ID=1.25A
150
100
50
0
Ta=25°C
pulsed
VGS=4.0V
VGS=4.5V
VGS=10V
100
10
Drain Current : ID [A]
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© 2012 ROHM Co., Ltd. All rights reserved.
2
4
6
8
10
Fig.16 Static Drain - Source On - State
Resistance vs. Junction Temperature
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Static Drain - Source On-State Resistance
: RDS(on) [mW]
1000
1
0
Gate - Source Voltage : VGS [V]
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(I)
0.1
ID=2.5A
200
Junction Temperature : Tj [ºC]
10
0.01
Ta=25°C
pulsed
120
100
80
60
40
VGS=10V
ID=2.5A
pulsed
20
0
-50 -25
0
25
50
75
100 125 150
Junction Temperature : Tj [ºC]
7/11
2012.06 - Rev.B
Data Sheet
RSR025N05FRA
lElectrical characteristic curves
Fig.18 Static Drain - Source On - State
Resistance vs. Drain Current(III)
1000
VGS=10V
pulsed
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Fig.17 Static Drain-Source On-State
Resistance vs. Drain Current(II)
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
10
0.01
0.1
1
10
Drain Current : ID [A]
1000
VGS=4.5V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
10
0.01
0.1
1
10
Drain Current : ID [A]
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Fig.19 Static Drain - Source On - State
Resistance vs. Drain Current(IV)
1000
VGS=4V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
10
0.01
0.1
1
10
Drain Current : ID [A]
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© 2012 ROHM Co., Ltd. All rights reserved.
8/11
2012.06 - Rev.B
Data Sheet
RSR025N05FRA
lElectrical characteristic curves
Fig.20 Typical Capacitance
vs. Drain - Source Voltage
Fig.21 Switching Characteristics
1000
Ta=25°C
f=1MHz
VGS=0V
1000
Ciss
100
Coss
10
1
Crss
0.01
0.1
1
10
100
10
td(on)
1
100
td(off)
0.01
0.1
Fig.22 Dynamic Input Characteristics
1
10
Fig.23 Source Current
vs. Source Drain Voltage
12
10
Ta=25°C
VDD=25V
ID=2.5A
Pulsed
VGS=0V
pulsed
Source Current : IS [A]
Gate - Source Voltage : VGS [V]
tr
Drain Current : ID [A]
Drain - Source Voltage : VDS [V]
10
VDD≒25V
VGS=10V
RG=10W
Ta=25°C
Pulsed
tf
Switching Time : t [ns]
Capacitance : C [pF]
10000
8
6
4
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
0.1
2
0
0
2
4
6
0.01
8
Total Gate Charge : Qg [nC]
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© 2012 ROHM Co., Ltd. All rights reserved.
0.0
0.5
1.0
1.5
Source-Drain Voltage : VSD [V]
9/11
2012.06 - Rev.B
Data Sheet
RSR025N05FRA
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Avalanche Measurement Circuit
Fig.3-2 Avalanche Waveform
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© 2012 ROHM Co., Ltd. All rights reserved.
10/11
2012.06 - Rev.B
Data Sheet
RSR025N05FRA
lDimensions (Unit : mm)
D
A
TSMT3
c
L1
Lp
HE
E
Q
e
b
x
S A
A3
e1
A
l1
A1
A2
e
S
b2
Patterm of terminal position areas
DIM
A
A1
A2
A3
b
c
D
E
e
HE
L1
Lp
Q
x
DIM
e1
b2
l1
MILIMETERS
MIN
MAX
1.00
0.00
0.10
0.75
0.95
0.25
0.35
0.50
0.10
0.26
2.80
3.00
1.50
1.80
0.95
2.60
3.00
0.30
0.60
0.40
0.70
0.05
0.25
0.20
MILIMETERS
MIN
MAX
2.10
0.70
0.90
INCHES
MIN
0
0.03
MAX
0.039
0.004
0.037
0.01
0.014
0.004
0.11
0.059
0.02
0.01
0.118
0.071
0.04
0.102
0.012
0.016
0.002
-
0.118
0.024
0.028
0.01
0.008
INCHES
MIN
MAX
0.08
-
0.028
0.035
Dimension in mm/inches
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© 2012 ROHM Co., Ltd. All rights reserved.
11/11
2012.06 - Rev.B
Datasheet
Notice
Precaution on using ROHM Products
1.
If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1),
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,
bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any
ROHM’s Products for Specific Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
CLASSⅢ
2.
ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
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a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
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Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.
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[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4.
The Products are not subject to radiation-proof design.
5.
Please verify and confirm characteristics of the final or mounted products in using the Products.
6.
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7.
De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8.
Confirm that operation temperature is within the specified range described in the product specification.
9.
ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2.
In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PAA-E
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.001
Datasheet
Precautions Regarding Application Examples and External Circuits
1.
If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2.
You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
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This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
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isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
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1.
Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2.
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3.
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4.
Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
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ROHM, its affiliated companies or third parties.
Notice-PAA-E
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.001
Datasheet
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3.
The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
Notice – WE
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.001
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