uClamp3305P Datasheet

uClamp3305P
Low Voltage TVS
for ESD Protection
PROTECTION PRODUCTS - MicroClampTM
Description
Features
The μClamp series of TVS arrays are designed to
protect sensitive electronics from damage or latch-up
due to ESD, lightning, and other voltage-induced
transient events. Each device will protect up to four
lines operating at 3.3 volts.
TM
‹ Transient protection for data lines to
‹
‹
‹
‹
‹
‹
The μClampTM3305P is a solid-state device designed
specifically for transient suppression. It is constructed
using Semtech’s proprietary EPD process technology.
The EPD process provides low standoff voltages with
significant reductions in leakage currents and capacitance over traditional pn junction processes. They offer
desirable characteristics for board level protection
including fast response time, low clamping voltage and
no device degradation.
Mechanical Characteristics
‹
‹
‹
‹
‹
‹
‹
The μClamp3305P may be used to meet the immunity
requirements of IEC 61000-4-2, level 4 (±15kV air,
±8kV contact discharge). It is packaged in an ultra
small SLP1616P6 package with a low profile of only
0.58mm. The leads are spaced at a pitch of 0.5mm
and are finished with lead-free NiPdAu. The small
package makes it ideal for use in portable electronics
such as cell phones, digital still cameras, and notebook
computers.
3
SLP1616P6 package
RoHS/WEEE Compliant
Nominal Dimensions: 1.6 x 1.6 x 0.58 mm
Lead Pitch: 0.5mm
Lead Finish: NiPdAu
Marking : Orientation Mark and Marking Code
Packaging : Tape and Reel
Applications
‹
‹
‹
‹
‹
‹
Circuit Diagram
1
IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
IEC 61000-4-4 (EFT) 40A (tp = 5/50ns)
Small package for use in portable electronics
Protects five I/O lines
Working voltage: 3.3V
Low leakage current
Low operating and clamping voltages
Solid-state silicon-avalanche technology
Cellular handsets and accessories
Notebooks and handhelds
MP3 Players
Digital cameras
Portable instrumentation
PDA’s
Package
4
5
1.6
6
1
1.6
6
0.5
0.6
Center Tab (GND)
Device Schematic
Revision 02/15/2008
6 Pin SLP package (Bottom Side View)
1.6 x 1.6 x 0.58mm (Nominal)
1
www.semtech.com
uClamp3305P
PROTECTION PRODUCTS
Absolute Maximum Rating
R ating
Symbol
Value
Units
Peak Pulse Power (tp = 8/20μs)
Pp k
40
Watts
Maximum Peak Pulse Current (tp = 8/20μs)
Ip p
5
Amps
ESD p er IEC 61000-4-2 (Air)
ESD p er IEC 61000-4-2 (Contact)
V PP
+/- 20
+/- 15
kV
Op erating Temp erature
TJ
-55 to +125
°C
TSTG
-55 to +150
°C
Storage Temp erature
Electrical Characteristics (T=25oC)
Parameter
Reverse Stand-Off Voltage
Symbo l
Conditions
Minimum
Typical
VRWM
Punch-Through Voltage
V PT
IPT = 2μA
3.5
Snap -Back Voltage
VSB
ISB = 50mA
2.8
Reverse Leakage Current
IR
VRWM = 3.3V
Clamp ing Voltage
VC
Clamp ing Voltage
3.9
Maximum
Units
3.3
V
4.6
V
V
0.5
μA
IPP = 1A, tp = 8/20μs
Any I/O to Gnd
5.5
V
VC
IPP = 5A, tp = 8/20μs
Any I/O to Gnd
8.0
V
Reverse Clamp ing Voltage
VCR
IPP = 1A, tp = 8/20μs
Any I/O to Gnd
2.4
V
25
pF
Junction Cap acitance
Cj
© 2008 Semtech Corp.
0.05
I/O p in to Gnd
VR = 0V, f = 1MHz
20
I/O p in to Gnd
VR = 3.3V, f = 1MHz
12
I/O p in to I/O p in
VR = 0V, f = 1MHz
10
I/O p in to I/O p i n
VR = 3.3V, f = 1MHz
7.5
2
pF
12.5
pF
pF
www.semtech.com
uClamp3305P
PROTECTION PRODUCTS
Typical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
Power Derating Curve
110
1
100
% of Rated Power or I PP
Peak Pulse Power - P PP (kW)
90
0.1
80
70
60
50
40
30
20
10
0
0.01
0.1
1
10
100
0
1000
25
50
75
100
125
150
Ambient Temperature - TA (oC)
Pulse Duration - tp (µs)
Forward Voltage vs. Forward Current
Clamping Voltage vs. Peak Pulse Current
10
8
Forward Voltage - VF (V)
Clamping Voltage - VC (V)
7
8
6
4
Waveform
Parameters:
tr = 8μs
td = 20μs
2
6
5
4
3
2
Waveform
Parameters:
tr = 8μs
td = 20μs
1
0
0
0
1
2
3
4
Peak Pulse Current - IPP (A)
5
0
6
1
2
3
4
Forward Current - IF (A)
5
6
ESD Clamping
(8kV Contact per IEC 61000-4-2)
Normalized Capacitance vs. Reverse Voltage
1.2
f = 1 MHz
CJ(VR) / CJ(VR=0)
1
Line-Line
0.8
0.6
Line-Ground
0.4
0.2
0
0
0.5
© 2008 Semtech Corp.
1
1.5
2
2.5
Reverse Voltage - VR (V)
3
3.5
3
www.semtech.com
uClamp3305P
PROTECTION PRODUCTS
Insertion Loss S21 - LtoL (I/O to I/O)
CH1 S21
LOG
Insertion Loss S21 -LtoG (I/O to Pin 2)
6 dB / REF 0 dB
CH1 S21
0 dB
6 dB / REF 0 dB
1: -3.0155 dB
260 MHz
2: -4.0655 dB
900 MHz
2: -7.4637 dB
900 MHz
3: -6.1405dB
1.8 GHz
3: -9.2053dB
1.8 GHz
0 dB
4: -8.0944 dB
2.5 GHz
-6 dB
LOG
1: -3.0041 dB
532 MHz
1
1
4: -9.9280 dB
2.5 GHz
-6 dB
2
2
-12 dB
4
-18 dB
-18 dB
-24 dB
-24 dB
-30 dB
-30 dB
-36 dB
1
MHz
10
MHz
100
MHz
-36 dB
3
1
GHz GHz
STOP 3000. 000000 MHz
START . 030 MHz
3
-12 dB
3
1
MHz
START . 030 MHz
10
MHz
100
MHz
4
3
1
GHz GHz
STOP 3000. 000000 MHz
Crosstalk S21 (I/O to Pin 4)
CH1 S21
LOG
20 dB /REF 0 dB
START . 030 MHz
© 2008 Semtech Corp.
STOP 3000. 000000 MHz
4
www.semtech.com
uClamp3305P
PROTECTION PRODUCTS
Applications Information
Figure 1 - Circuit Diagram
Device Connection Options
The μClamp3305P is designed to protect 5 signal lines
with an operating voltage of 0 to 3.3V. It will present a
high impedance to the protected line up to 3.3 volts. It
will “turn on” when the line voltage exceeds 3.5 volts.
The device is unidirectional and may be used on lines
where the signal polarity is above ground.
1
Pin 1,3,4,5,6 are connected to I/O signals. The center
tab is connected to system ground. Pin 2 should be left
open or not connected. All signal lines and ground
should be made with the lowest impedance and
inductance path as possible. This will improve signal
quality of the lines and keep the clamping voltage as low
as possible during a fast transient.
3
4
6
5
Center Tab (GND)
Figure 2 - Layout Example
Due to the “snap-back” characteristics of the low
voltage TVS, it is not recommended that the I/O line be
directly connected to a DC source greater than snapback votlage (VSB) as the device can latch on.
EPD TVS Characteristics
These devices are constructed using Semtech’s
proprietary EPD technology. The structure of the EPD
TVS is vastly different from the traditional pn-junction
devices. At voltages below 5V, high leakage current
and junction capacitance render conventional avalanche technology impractical for most applications.
However, by utilizing the EPD technology, these devices
can effectively operate at 3.3V while maintaining
excellent electrical characteristics.
Figure 3 - EPD TVS IV Characteristic Curve
The EPD TVS employs a complex nppn structure in
contrast to the pn structure normally found in traditional silicon-avalanche TVS diodes. The EPD mechanism is achieved by engineering the center region of
the device such that the reverse biased junction does
not avalanche, but will “punch-through” to a conducting state. This structure results in a device with superior DC electrical parameters at low voltages while
maintaining the capability to absorb high transient
currents.
© 2008 Semtech Corp.
IPP
ISB
IPT
VF
IR
VRWM
VSB VPT VC
IF
5
www.semtech.com
uClamp3305P
Low Voltage TVS
for ESD Protection
PROTECTION PRODUCTS - MicroClampTM
Applications Information - Spice Model
I/O
Figure 3 - μClamp3305P Spice Model
μClamp3305P Spice Parameters
Parameter
Unit
D1 (T VS)
IS
Amp
2E-12
BV
Volt
20
VJ
Volt
0.57
RS
O hm
1.444
IBV
Amp
1.0 E-3
CJO
Farad
2 0 E -1 2
TT
sec
2.541E-9
M
--
0 .2 3 6
N
--
1.1
EG
eV
1.11
6
www.semtech.com
uClamp3305P
PROTECTION PRODUCTS
Outline Drawing - SLP1616P6
A
B
D
PIN 1
INDICATOR
(LASER MARK)
E
DIM
A
SEATING
PLANE
aaa C
A2
A
A1
A2
b
D
D1
E
E1
e
L
N
aaa
bbb
C
A1
D1
1 2
LxN
E/2
E1
DIMENSIONS
INCHES
MILLIMETERS
MIN NOM MAX MIN NOM MAX
.020 .023 .026
0.00 .001 .002
(.005)
.008 .010 .012
.059 .063 .067
.041 .047 .051
.059 .063 .067
.010 .016 .020
.020 BSC
.010 .013 .016
6
.003
.004
0.50 0.58 0.65
0.00 0.03 0.05
(0.13)
0.20 0.25 0.30
1.50 1.60 1.70
1.05 1.20 1.30
1.50 1.60 1.70
0.25 0.40 0.50
0.50 BSC
0.25 0.33 0.40
6
0.08
0.10
N
bxN
bbb
e
C A B
D/2
NOTES:
1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).
2. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS.
Land Pattern - SLP1616P6
P
X
DIMENSIONS
Z
H
G
DIM
C
G
H
K
P
X
Y
Z
(C)
Y
INCHES
.060
.035
.018
.051
.020
.012
.025
.085
MILLIMETERS
1.52
0.89
0.45
1.30
0.50
0.30
0.63
2.15
K
NOTES:
1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).
2. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY.
CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR
COMPANY'S MANUFACTURING GUIDELINES ARE MET.
3. THERMAL VIAS IN THE LAND PATTERN OF THE EXPOSED PAD
SHALL BE CONNECTED TO A SYSTEM GROUND PLANE.
FAILURE TO DO SO MAY COMPROMISE THE THERMAL AND/OR
FUNCTIONAL PERFORMANCE OF THE DEVICE.
© 2008 Semtech Corp.
7
www.semtech.com
uClamp3305P
PROTECTION PRODUCTS
Marking
Ordering Information
3305P
YW
Part Number
Working
Voltage
Lead
Finish
Qty per
Reel
Reel
Size
uClamp3305P.TCT
3.3V
Pb Free
3,000
7 Inch
MicroClamp, uClamp and μClamp are marks of Semtech
Corporation
Y = year
W = Week
Tape and Reel Specification
Device Orientation in Tape
(Pin 1 upper left towards sprocket holes)
A0
1.78 +/-0.10 mm
B0
K0
1.78 +/-0.10 mm
0.69 +/-0.10 mm
Tape
Width
B, (Max)
D
D1
8 mm
4.2 mm
(.165)
1.5 + 0.1 mm
- 0.0 mm
(0.59 +.005
- .000)
0.8 mm
±0.05
(.031)
E
1.750±.10
mm
(.069±.004)
F
K
(MAX)
P
P0
P2
T(MAX)
W
3.5±0.05
mm
(.138±.002)
2.4 mm
(.094)
4.0±0.1
mm
(.157±.004)
4.0±0.1
mm
(.157±.004)
2.0±0.05mm
(.079±.002)
0.4 mm
(.016)
8.0 mm
+ 0.3 mm
- 0.1 mm
(.312±.012)
Contact Information
Semtech Corporation
Protection Products Division
200 Flynn Rd., Camarillo, CA 93012
Phone: (805)498-2111 FAX (805)498-3804
© 2008 Semtech Corp.
8
www.semtech.com