New Product Bulletin 1200V / 180A Full SiC Power Module with Integrated SiC Trench MOSFET BSM180D12P3C007 New full SiC power module with built-in SiC trench MOSFET reduces ON resistance and improves switching performance Product Outline SiC devices are attracting attention due to their superior performance and characteristics compared with silicon as a semiconductor material. ROHM’s new SiC MOSFET, which utilizes a trench structure that reduces ON resistance by 50% and input capacitance by 35% compared with existing planar-type SiC MOSFETs, has been adopted in ROHM’s 1200V/180A full SiC power module. BSM180D12P3C007 ■ Proprietary double trench structure provides long-term reliability ■ ON resistance reduced by 50% ROHM’ s Double Trench Structure Metal Metal SiO2 N+ P P+ SiO2 N+ Poly-Si P+ Gate Trench P Poly-Si Gate Trench Source Trench SiC n’ Drift layer SiC n’ Drift layer SiC sub SiC sub Metal Metal ON Resistance vs. Input Capacitance Input Capacitance (pF) Standard Single Trench Structure 50% lower * ON resistance 80mΩ Planar MOSFET Input capacitance reduced 35%* Trench 40mΩMOSFET Trench 40mΩ MOSFET 0 Electric field concentration mitigated at the base of the Gate Trench Electric field concentrated at the base of the Gate Trench 2nd Generation SiC MOSFET 3rd Generation SiC Trench MOSFET 20 40 60 80 100 120 140 ON Resistance@25°C (mΩ) 160 *Same chip size ■ Dramatically lower switching loss Electric Field Concentration High High Low Low Switching Loss Comparison Switching loss ■ Specifications Part No. BSM180D12P3C007 VDSS (V) VGS (V) 1200 -4 to +22 Absolute Max. Ratings (Ta=25°C) Tj Tstg ID (A) (°C) (°C) [Tc=60°C] 180 -40 to +175 -40 to +125 Package (C Type) [AC 1min] RDS(ON) Typ. (mΩ) 2500 10 Visol (V) Internal Circuit decreased 77% Switching Loss Electric Field Concentration 60% less 42% less IGBT Module 122 S1D2 45.6 D1 SS1 S1D2 SS2 S2 S2 G1 17 21.1 G1 SS1 N.C N.C SS2 G2 S1D2 Planar MOSFET BSM180D12P2C101 Trench MOSFET BSM180D12P3C007 D1 G2 ■ Expanded discrete trench MOSFET lineup The lineup is being expanded to include 3 part numbers for each rated voltage: 650V and 1200V, in rated currents of 95A (1200V) and 118A (650V). (Unit: mm) 21th January,2016. .58F6889E-A 01.2016