High Reliability
Radiation Hardened
Semiconductors
• Rectifiers & Diodes • BiPolar Transistors • Power MOSFETs
HiREL Product Guide
Contents
Page
Introduction
3
MIL-PRF-19500 Radiation Test Requirements
4
•
•
•
•
Total Ionizing Dose (TID) or Gamma Irradiation
Enhanced Low Dose Rate Sensitivity (ELDRS)
Neutron Irradiation
Single Event Effects (SEE)
High Reliability Radiation H
Hardened
arde
ar
den
ne
ed R
Re
Rectifier
ec
cttiifi
fie
err & D
Diode
i de P
io
Products
r du
ro
duct
cts
s
•
•
•
•
5
Rectifiers
Zeners and Transient Voltage
ge Suppressors
ge
Sup
ppr
pressso
orrs
s (TVS)
((TV
T S))
TV
Schottky Rectifiers
Temperature Compensated
d Zeners
Zen
Ze
ne
ers
rs (TCZ
(TC
TCZ
Z
High Reliability Radiation H
Hardened
arrde
d ne
ned
d Bi
B
Bipolar
ipo
pola
ar Tr
T
Transistors
ansi
an
ns
siist
sto
ors
or
6-7
6--7
• Product Listing
• Total Dose Irradiation Effects
cts
s on
on Bipolar
B po
Bi
p la
ar Transistors
T an
Tr
a si
s st
s or
os
High Reliability Radiation H
Hardened
arde
ar
dene
ned
d Po
Powe
Power
werr MO
MOSF
MOSFETs
FET
Ts
8-9
8--9
8
• Product Listing
• Single Event Capability
High Reliability Radiation H
Hardened
arde
ar
d ne
ned
d Se
Semi
Semiconductor
m co
cond
nd
ducto
ucto
uc
tor
or Ch
C
Chip
Chips
hip
ps
Blank Note Pages
10
10
11-14
11
1
1-1
- 4
15
Updates/Inserts Pocket
15
Contents
Tools for Learning About M
Microsemi’s
High
Reliability
Products
icro
ic
rose
s mi
mi’s
’s H
Hig
igh
h Re
Reli
liab
abil
ilit
ity
y Pr
Prod
od
du
uc
cts
ts
2
Leader in Radiation
Hardened Products
Microsemi Corporation (MSCC) is the world’s leading supplier of High Reliability
Discrete Semiconductors. Microsemi was the first diode manufacturer selected by the
U.S. military services as a source of supply to qualify product to the highest specified
reliability level—JANS. Our heritage in supplying space compliant semiconductor
products in accordance with MIL-PRF-19500 extends over 30 years. Microsemi has
expanded its space product offering to include a wide variety of hermetic diodes,
transistors, and MOSFETs.
Microsemi has been involved in numerous military and commercial space programs
involving radiation hardened product specifications with stringent performance requirements. This now includes the largest selection of JANS qualified products in the world;
a portfolio that has become predominant in satellite and launch vehicle programs. With
recent design trends, the ability to assemble in a variety of packaging styles has become
essential. This includes surface mount packaging options for virtually any product, as
well as chips for hybrid use.
•
•
•
•
•
•
Diodes
Power Mosfets
Rectifiers
Schottkys
Transistors
Zeners
Key Application Specific Products
• Thermally activated battery bypass switches for satellites
• Solar cell bypass diodes for bypassing faulty solar cells
• Zero temperature coefficient radiation hardened compensated zener diodes
Custom Products
• Complete solutions from die selection and screening through module assembly
• Custom test, environmental and screening capabilities
• Full range of Total Dose, ELDRs and Single Event Effects (SEE)
characterizations available
Overview
3
Radiation Services
MIL-PRF-19500 is the General Performance Specification for Semiconductor Devices. This
specification is maintained by the Defense Logistics Agency (DLA) to provide the supplier
requirements for manufacturing high reliability semiconductors. MIL-PRF-19500, along
with the detailed part requirements found in related slashsheets, and MIL-STD-750 (“Test Methods
for Semiconductor Devices” published by the United States Department of Defense) combine to
fully specify the scope of Radiation test requirements for discrete semiconductor part types. The
following is a brief description of the key radiation tests detailed in these documents.
Radiation Tests Services Available
Microsemi is capable of performing all the methods listed below and offers these test services
to our customers. Please contact Microsemi Sales for a review of your unique radiation test
requirements.
RHA Prefix
Total Ionizing
Dose Level
M
D
P
L
R
F
G
H
3K RADS
10K RADS
30K RADS
50K RADS
100K RADS
300K RADS
500K RADS
1000K RADS
Example:
JANSR2N2222A (100K RADS)
JANSF2N7261 (300K RADS)
Total Ionizing Dose (TID) or Gamma Irradiation
Per Mil-Std-750 Method 1019
Dose rate 50-200RAD(Si)/s nominal 100RAD(Si)/s
Typically 3kRAD(Si) to 1MRAD(Si) or 300Gy(Si) to 10000Gy(Si)
Note Gy = Gray where 100RAD = Gray
ELDRS (Enhanced Low Dose Rate Sensitivity)
Reference Mil-Std-833 Method 1019
Dose rate either 0.01RAD(Si)/s to 0.020RAD(Si)/s
Typically 10kRAD(Si) which takes 7 days at 0.020RAD(Si)/s
Radiation Services
Neutron Irradiation (Fast Neutrons)
Per Mil-Std-750 Method 1017
Typically 1E12 n/cm2 to 1E15n/cm2
Large 12 x 12 x 12 inch Target Chamber (can test small systems)
Single Event Effects (SEE) with Heavy Ions
Per Mil-Std-750 Method 1080
Single Event Gate Response (SEGR)
Single Event Burnout (SEB)
K500 Cyclotron with a wide variety of LETs and Ranges
Radiation Services Available
Microsemi is capable of performing all of the radiation test methods listed above and
offers these test services to our customers. Please contact the Microsemi Sales
department for review of your unique radiation test requirements.
7
4
High Reliability Radiation Hardened
Rectifier & Diode Products
Most Microsemi Space-level rectifier and diode products are inherently radiation
hardened. This fact has been understood by our major customers for many years.
As a result, our heritage of usage in space programs is unsurpassed in the industry.
Due to the inherent capability of rectifiers and diodes, MIL-PRF-19500 in general does
not specify radiation hardness levels for this product family (some exceptions do exist).
Microsemi’s portfolio of JANS qualified rectifiers and diodes is far too extensive to
list in this shortfom catalog. The following provides a broad overview of the radiation
hardened performance of our core space level diode families. For specific performance
information, please visit our website at www.microsemi.com or Microsemi Sales.
Rectifiers are naturally radiation hard up to 106 or 107 RAD(Si) and 1014 n/cm2. This
depends heavily on breakdown voltage (VBR), lifetime (switching speed), etc. with
forward voltage (VF) and reverse leakage current (IR) being the affected parameters.
The “fast” and “ultrafast” recovery rectifiers (FRR and UFR) will have much less effect
from high radiation.
Zeners and Transient Voltage Suppressors (TVS) are naturally very radiation hard
as they employ majority carrier avalanche breakdown. These easily perform up to 107
RAD(Si) and 1014 n/cm2 for products up to 200 volts. Below 100 volts, they exceed 108
RAD(Si) and 1015 n/cm2.
Schottky Rectifiers also operate on a majority carrier principle with natural radiationhard performance and are comparable to zeners less than 100 volts described above.
Typically, reverse leakage current (IR) is affected although not enough to affect performance. Exposure of 106 RAD(Si) is considered acceptable as well as 1013 n/cm2 or
higher.
Temperature Compensated Zeners (TCZ) are manufactured with process to improve
stability and this process makes these parts naturally radiation hard. These reference
diodes are capable of performance up to 106 RAD and 1014 n/cm2.
Rectifiers & Diodes
5
High Reliability Radiation Hardened
Bipolar Transistors
Part Number
V(BR)
CEO
IC
Max TID MIL-PRFRating
19500
SMD-0.5 (Surface Mount)
NPN Power
JANSF2N5152U3
JANSF2N5154U3
80V
80V
10.0A 300K RAD
10.0A 300K RAD
/544
/544
PNP Power
JANSF2N5151U3
JANSF2N5153U3
80V
80V
10.0A 300K RAD
10.0A 300K RAD
/545
/545
TO-18
Part Number
NPN Silicon Switcher
JANSH2N2221A
50V
JANSH2N2221AL
50V
JANSH2N2222A
50V
JANSH2N2222AL
50V
JANSF2N2369A
15V
JANSR2N3700
80V
JANSF2N4449
15V
PNP Silicon Switcher
JANSR2N2906A
JANSR2N2906AL
JANSR2N2907A
JANSR2N2907AL
60V
60V
60V
60V
0.8A
0.8A
0.8A
0.8A
0.1A
1.0A
0.1A
1 MEG RAD
1 MEG RAD
1 MEG RAD
1 MEG RAD
300K RAD
100K RAD
300K RAD
/255
/255
/255
/255
/317
/391
/317
0.6A
0.6A
0.6A
0.6A
100K RAD
100K RAD
100K RAD
100K RAD
/291
/291
/291
/291
TO-39
NPN Silicon Switcher
JANSR2N2218
30V
JANSR2N2218A
50V
JANSR2N2219
30V
JANSR2N2219A
50V
JANSR2N3019S
80V
JANSR2N3439L
350V
JANSR2N3440L
250V
JANSR2N3498
100V
JANSR2N3499
100V
JANSR2N3500
150V
JANSR2N3501
150V
0.8A
0.8A
0.8A
0.8A
1.0A
1.0A
1.0A
0.3A
0.3A
0.3A
0.3A
100K RAD
100K RAD
100K RAD
100K RAD
100K RAD
100K RAD
100K RAD
100K RAD
100K RAD
100K RAD
100K RAD
/251
/251
/251
/251
/391
/368
/368
/366
/366
/366
/366
V(BR)
CEO
IC
Max TID MIL-PRFRating
19500
TO-5
NPN Silicon Switcher
JANSR2N2218AL
50V
JANSR2N2219AL
50V
JANSR2N3019
80V
JANSR2N3439
350V
JANSR2N3440
250V
JANSR2N3498L
100V
JANSR2N3499L
100V
JANSR2N3500L
150V
JANSR2N3501L
150V
0.8A
0.8A
1.0A
1.0A
1.0A
0.3A
0.3A
0.3A
0.3A
100K RAD
100K RAD
100K RAD
100K RAD
100K RAD
100K RAD
100K RAD
100K RAD
100K RAD
/251
/251
/391
/368
/368
/366
/366
/366
/366
PNP Silicon Switcher
JANSR2N3634L
140V
JANSR2N3635L
140V
JANSR2N3636L
175V
JANSR2N3637L
175V
1.0A
1.0A
1.0A
1.0A
100K RAD
100K RAD
100K RAD
100K RAD
/357
/357
/357
/357
NPN Power
JANSF2N5152L
JANSF2N5154L
80V
80V
10.0A 300K RAD
10.0A 300K RAD
/544
/544
PNP Power
JANSF2N5151L
JANSF2N5153L
80V
80V
10.0A 300K RAD
10.0A 300K RAD
/545
/545
80V
80V
10.0A 300K RAD
10.0A 300K RAD
/534
/534
60V
60V
60V
60V
0.1A
0.1A
0.1A
0.1A
/336
/336
/336
/336
TO-59
Bipolar
PNP Silicon Switcher
JANSR2N3634
140V
JANSR2N3635
140V
JANSR2N3636
175V
JANSR2N3637
175V
1.0A
1.0A
1.0A
1.0A
100K RAD
100K RAD
100K RAD
100K RAD
/357
/357
/357
/357
NPN Power
JANSF2N5152
JANSF2N5154
80V
80V
10.0A 300K RAD
10.0A 300K RAD
/544
/544
PNP Power
JANSF2N5151
JANSF2N5153
80V
80V
10.0A 300K RAD
10.0A 300K RAD
/545
/545
NPN Power
JANSF2N5002
JANSF2N5004
TO-78
PNP DUAL
JANSF2N3810
JANSF2N3810L
JANSF2N3811
JANSF2N3811L
300K RAD
300K RAD
300K RAD
300K RAD
Products are listed with the highest qualified radiation hardness assurance designation as described on Page 4 of this brochure.
6
Part Number
V(BR)
CEO
IC
Max TID
Rating
MIL-PRF19500
3 Pin LCC (Surface Mount)
NPN Silicon Switcher
JANSH2N2221AUB
JANSH2N2221AUBC
JANSH2N2222AUB
JANSH2N22222AUBC
JANSF2N2369AUB
JANSF2N2369AUBC
JANSR2N3501UB
JANSR2N3700UB
50V
50V
50V
50V
15V
15V
150V
80V
0.8A
0.8A
0.8A
0.8A
0.1A
0.1A
0.3A
1.0A
1 MEG RAD
1 MEG RAD
1 MEG RAD
1 MEG RAD
300K RAD
300K RAD
100K RAD
100K RAD
/255
/255
/255
/255
/317
/317
/366
/391
PNP Silicon Switcher
JANSR2N2906AUB
JANSR2N2906AUBC
JANSR2N2907AUB
JANSR2N2907AUBC
JANSR2N3634UB
JANSR2N3635UB
JANSR2N3636UB
JANSR2N3637UB
60V
60V
60V
60V
140V
140V
175V
175V
0.6A
0.6A
0.6A
0.6A
1.0A
1.0A
1.0A
1.0A
100K RAD
100K RAD
100K RAD
100K RAD
100K RAD
100K RAD
100K RAD
100K RAD
/291
/291
/291
/291
/357
/357
/357
/357
4 Pin LCC (Surface Mount)
NPN Silicon Switcher
JANSH2N2221AUA
JANSH2N22222AUA
JANSF2N2369AUA
JANSR2N3439UA
JANSR2N3440UA
50V
50V
15V
350V
250V
PNP Silicon Switcher
JANSR2N2906AUA
60V
JANSR2N2907AUA
60V
0.8A
0.8A
0.1A
1.0A
1.0A
1 MEG RAD
1 MEG RAD
300K RAD
100K RAD
100K RAD
/255
/255
/317
/368
/368
0.6A 100K RAD
0.6A 100K RAD
/291
/291
6 Pin LCC (Surface Mount)
NPN Silicon Switcher
JANSF2N2369AU
15V
JANSF2N3810U
60V
0.1A 300K RAD
0.1A 300K RAD
/317
/336
PNP DUAL
JANSF2N3811U
0.1A 300K RAD
/336
60V
Ionizing radiation damage in semiconductor devices is
mainly the result of charges trapped on or near the surfaces of their insulating layers and interfaces. In bipolar
devices, a trapped charge at their surface layers produce
inversion layers that expand the effective surface area,
hence, modifying the surface potential at the Si-SiO2
interfaces.
This means that there will be a reduction in the minority
carrier life-time and hence a corresponding decrease in
the DC current gain (hFE) of the DUT. Therefore, bipolar
transistors require special calculations to report their
post-irradiation performance:
(a) Delta (1/hFE): Let hFE1 be the measured hFE
at a specific test point (Vce, Ic) prior to irradiation.
Let hFE2 be the measured hFE post-irradiation
at that same test point.
Then: Delta (1/hFE) = ∆(1/hFE) = 1/hFE2 – 1/hFE1
and is unitless as is hFE.
Example: hFE1 = 200 before irradiation and at
post-irradiation testing it has decreased to hFE2 =
125.Then: ∆ (1/hFE) = 1/125 – 1/200 = 0.00300.
(b) [hFE] calculation is not a directly measured value
of hFE, but rather a calculated value used by
system analysis engineers. It signifies exactly
how well the bipolar transistor will perform in the
system after exposure to a radiation fluence.
This [hFE] is denoted in square brackets [ ]
to delineate it from any measured value of hFE
and uses the calculated value of Delta (1/hFE) but
adds one additional term.
Calculate as follows:
Let hFE(min) be the pre-irradiation spec
minimum hFE limit at the same test point in
the Delta(1/hFE) calculation shown above.
Then: [hFE] = inverse { ∆(1/hFE) + 1/hFE)min}
TO-254AA
NPN Power
JANSF2N7373
Total Dose Irradiation Effects
on Bipolar Transistors
80V
10.0A 300K RAD
/613
Then: [hFE] = inverse { 0.00300 + 1/100 } =
inverse { 0.003 + 0.01 } = 1 / { 0.013} = 76.92.
TO-46
NPN Silicon Switcher
JANSR2N3057A
80V
Example: hFE(min) = 100 and, in accordance
with the above expample, ∆(1/hFE) = 0.00300.
1.0A 100K RAD
/391
Note that [hFE] can never exceed hFE (min).
Products are listed with the highest qualified radiation hardness assurance designation as described on Page 4 of this brochure.
7
Bipolar
(c) When ∆(1/hFE), [hFE] or both are required by the control specification, these calculations will only be
required on the irradiation test samples. The test report
shall then contain, in spreadsheet fashion, the appropriate pre and post hFE measurements as well as the
required calculation results. Unless otherwise specified,
all devices shall adhere to the specification maximum
hFE limits that were imposed pre-irradiation.
NEW
TION
IFICA
QUAL
High Reliability
Radiation Hardened
Power MOSFETs
Microsemi has recently qualified its first generation of Radiation Hardened Power MOSFETs.
The post irradiation test requirements for MOSFETs are clearly defined in the controlling
MIL-PRF-19500 slashsheets. Typically, MOSFETs show movement in threshold voltage (Vth)
after exposure to Total Ionizing Dose (TID) Irradiation.
Following is a listing of our current MIL-PRF-19500 radiation hardened qualified devices. Check
our website for the latest product offerings as we continue to expand this product portfolio.
TO-205AF (TO-39)
Part Number
JANSR2N7389
JANSF2N7389
JANSR2N7261
JANSF2N7261
JANSR2N7262
JANSF2N7262
P
P
N
N
N
N
BVDSS
MIN
V
-100
-100
100
100
200
200
VGS
MAX
V
±20
±20
±20
±20
±20
±20
RDS(on)
MAX
mΩ
300
300
180
180
350
350
P
P
N
N
N
N
-100
-100
100
100
200
200
±20
±20
±20
±20
±20
±20
-100
-100
100
100
200
200
Channel
MIL-PRF19500 Spec.
W
25
25
25
25
25
25
MAX TID
Rating
(K RAD)
100
300
100
300
100
300
11.0
11.0
14.4
14.4
9.4
9.4
75
75
75
75
75
75
100
300
100
300
100
300
/615
/615
/614
/614
/614
/614
300
300
180
180
350
350
6.5
6.5
8.0
8.0
5.5
5.5
25
25
25
25
25
25
100
300
100
300
100
300
/630
/630
/601
/601
/601
/601
±20
±20
±20
±20
±20
±20
±20
±20
27
27
27
27
65
65
100
100
35
35
35
35
34.0
34.0
26.0
26.0
150
150
150
150
150
150
150
150
100
300
100
300
100
300
100
300
N/A
N/A
/603
/603
/603
/603
/603
/603
±20
±20
±20
±20
±20
±20
27
27
65
65
100
100
35
35
34
34
26
26
150
150
150
150
150
150
100
300
100
300
100
300
N/A
/603
/603
/603
/603
/603
ID MAX
PD MAX
A
6.5
6.5
8.0
8.0
5.5
5.5
300
300
180
180
400
400
±20
±20
±20
±20
±20
±20
60
60
60
60
100
100
200
200
60
60
100
100
200
200
/630
/630
/601
/601
/601
/601
TO-257AA
JANSR2N7382
JANSF2N7382
JANSR2N7380
JANSF2N7380
JANSR2N7381
JANSF2N7381
18-Pin LCC (Surface Mount)
JANSR2N7389U
JANSF2N7389U
JANSR2N7261U
JANSF2N7261U
JANSR2N7262U
JANSF2N7262U
P
P
N
N
N
N
Power
Powe
Po
werr MOSFETs
MOSF
MO
SFET
ETs
s
SMD-1 (TO-267AB Surface Mount)
MSR2N7394U**
MSF2N7394U**
JANSR2N7394U*
JANSF2N7394U*
JANSR2N7268U
JANSF2N7268U
JANSR2N7269U
JANSF2N7269U
N
N
N
N
N
N
N
N
TO-254AA
MSR2N7394**
N
JANSF2N7394*
N
JANSR2N7268
N
JANSF2N7268
N
JANSR2N7269
N
JANSF2N7269
N
* DLA qualification in progress
** Microsemi qualified part
48
Single Event Capability
In addition to TID, Microsemi routinely performs Single Event Effects (SEE) testing using Heavy
Ions. Microsemi MOSFETs are sample tested for Single Event Gate Rupture (SEGR) and Single
Event Burnout (SEB). The following graphs summarize the SEE results obtained for each of the
MOSFET groups.
100V N-channel: 2N7261, 2N7268, 2N7380
110
TAMU Ar
LET=8.3
Range =192um
Total
Energy=531MeV
100
90
80
TAMU Kr
LET=27.8
Range =134um
Total
Energy=1032MeV
Drain Bias, V
70
60
50
TAMU Ag
LET=42.2
Range =119um
Total
Energy=1289MeV
40
30
20
TAMU Au
LET=85.4
Range =118um
Total
Energy=2247MeV
10
0
0
-5
-10
-15
Gate Bias, V
-20
-25
200V N-channel: 2N7262, 2N7269, 2N7381
TAMU Ar
LET=8.3
Range =192um
Total
Energy=531MeV
220
200
180
TAMU Kr
LET=27.8
Range =134um
Total
Energy=1032MeV
Drain Bias, V
160
140
120
100
TAMU Ag
LET=42.2
Range =119um
Total
Energy=1289MeV
80
60
40
TAMU Au
LET=85.4
Range =118um
Total
Energy=2247MeV
20
0
0
-5
-10
-15
Gate Bias, V
-20
-25
-100V P-channel: 2N7382, 2N7389
-110
-100
-90
Drain Bias, V
-70
-60
-50
-40
-30
-20
-10
0
0
5
10
Gate Bias, V
15
59
20
25
Power MOSFETs
-80
TAMU Ar
LET=8.3
Range =192um
Total
Energy=531MeV
TAMU Kr
LET=27.8
Range =134um
Total
Energy=1032MeV
TAMU Ag
LET=42.2
Range =119um
Total
Energy=1289MeV
TAMU Au
LET=85.4
Range =118um
Total
Energy=2247MeV
High Reliability Radiation Hardened
Semiconductor Chips
Microsemi Corporation is a leader in the
sale of semiconductor chips to the high
reliability military and space community
for hybrid circuit applications.
We also regularly sell commercial chip and
JANHC/JANKC equivalents to meet
customer specific needs.
Semiconductor Chips
We are continuously adding to our qualified product listings.
If you are unable to find the chip you are
looking for, please contact our Sales Department for the latest updates.
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Solar Flare
NASA Solar Dynamics Observatory
High Reliability, Radiation Hardened
Semiconductors
Microsemi has a team of specialists available to provide application support for
you High Reliability requirements. Call for more information or visit our website.
America Sales Direct
Europe / Asia Sales Direct
Microsemi Corporation
6 Lake Street
Lawrence, MA 01841
Ph: 978-620-2600
Fax: 978-689-0803
Email: [email protected]
Microsemi Corporation
Gort Road Business Park
Ennis, County Clare
Ireland
Ph: 353 65 684 044
Email: [email protected]
www.microsemi.com
© 2011 Microsemi Corporation. Specifications subject to change without notice.
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