TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/601 DEVICES LEVELS 2N7262 2N7262U JANSR (100K RAD(Si)) JANSF (300K RAD(Si)) ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain – Source Voltage VDS 200 Vdc Gate – Source Voltage VGS ± 20 Vdc ID1 5.5 Adc ID2 3.5 Adc Ptl 25 (1) W Continuous Drain Current TC = +25°C Continuous Drain Current TC = +100°C Max. Power Dissipation Drain to Source On State Resistance Rds(on) Operating & Storage Temperature Top, Tstg 0.35 (2) -55 to +150 Ω °C Note: (1) Derated Linearly by 0.2 W/°C for TC > +25°C (2) VGS = 12Vdc, ID = 3.5A PRE-IRRADIATION ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Drain-Source Breakdown Voltage VGS = 0V, ID = 1mAdc V(BR)DSS 200 Gate-Source Voltage (Threshold) VDS ≥ VGS, ID = 1.0mA VDS ≥ VGS, ID = 1.0mA, Tj = +125°C VDS ≥ VGS, ID = 1.0mA, Tj = -55°C VGS(th)1 VGS(th)2 VGS(th)3 2.0 1.0 Gate Current VGS = ±20V, VDS = 0V VGS = ±20V, VDS = 0V, Tj = +125°C IGSS1 IGSS2 ±100 ±200 nAdc Drain Current VGS = 0V, VDS = 160V VGS = 0V, VDS = 200V, Tj = +125°C VGS = 0V, VDS = 160V, Tj = +125°C IDSS1 IDSS2 IDSS3 25 1.0 0.25 µAdc mAdc mAdc rDS(on)1 rDS(on)2 0..350 0.364 Ω Ω rDS(on)3 0.60 Ω VSD 1.4 Vdc Static Drain-Source On-State Resistance VGS = 12V, ID = 3.5A pulsed VGS = 12V, ID = 5.5A pulsed Tj = +125°C VGS = 12V, ID = 3.5A pulsed Diode Forward Voltage VGS = 0V, ID = 5.5A pulsed T4-LDS-0120 Rev. 2 (101017) Max. TO-205AF (modified TO-39) JANSR2N7262, JANSF2N7262 See Figure 1 Unit Vdc 4.0 Vdc 5.0 18 PIN LEADLESS CHIP CARRIER JANSR2N7262U, JANSF2N7262U See Figure 2 Page 1 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/601 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: On-State Gate Charge Gate to Source Charge Gate to Drain Charge Symbol Min. Max. Qg(on) Qgs Qgd VGS = 12V, ID = 5.5A VDS = 100V 50 10 20 Unit nC SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time ID = 5.5A, VGS = 12Vdc, Gate drive impedance = 2.35Ω, VDD = 100Vdc Diode Reverse Recovery Time di/dt ≤ 100A/µs, VDD ≤ 30V, IF = 5.5A Min. Max. td(on) tr td(off) tf 25 32 40 40 trr 400 Unit ns ns POST-IRRADIATION ELECTRICAL CHARACTERISTICS (3) (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Drain-Source Breakdown Voltage VGS = 0V, ID = 1mAdc V(BR)DSS 200 VGS(th)1 VGS(th)1 2.0 1.25 Gate-Source Voltage (Threshold) VDS ≥ VGS, ID = 1.0mA MSR VDS ≥ VGS, ID = 1.0mA MSF Gate Current VGS = ±20V, VDS = 0V IGSS1 Drain Current VGS = 0V, VDS = 160V MSR VGS = 0V, VDS = 160V MSF IDSS1 Static Drain-Source On-State Voltage VGS = 12V, ID = 3.5A pulsed MSR VGS = 12V, ID = 3.5A pulsed MSF Diode Forward Voltage VGS = 0V, ID = 5.5A pulsed Max. Unit Vdc 4.0 4.5 Vdc ±100 nAdc 25 50 µAdc VDS(on) 1.225 1.68 Vdc VSD 1.4 Vdc NOTE: (3) Post-Irradiation Electrical Characteristics apply to devices subjected to Steady State Total Dose Irradiation testing in accordance with MIL-STD-750 Method 1019. Separate samples are tested for VGS bias (12V), and VDS bias (160V) conditions. T4-LDS-0120 Rev. 2 (101017) Page 2 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/601 Single Event Effect (SEE) Characteristics: Heavy Ion testing of the 2N7262 device has been characterized at the Texas A&M cyclotron. The following SOA curve has been established using the elements, LET, range, and Total Energy conditions as shown: 2N7262 TAMU Ar LET=8.3 Range =192um Total Energy=531MeV 220 200 180 TAMU Kr LET=27.8 Range =134um Total Energy=1032MeV Drain Bias, V 160 140 120 100 TAMU Ag LET=42.2 Range =119um Total Energy=1289MeV 80 60 40 20 0 0 -5 -10 -15 Gate Bias, V -20 -25 TAMU Au LET=85.4 Range =118um Total Energy=2247MeV It should be noted that total energy levels are considered to be a factor in SEE characterization. Comparisons to other datasets should not be based on LET alone. Please consult factory for more information. T4-LDS-0120 Rev. 2 (101017) Page 3 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/601 Figure 1: Case Outline and Pin Configuration for JANSR2N7262 & JANSF2N7262 T4-LDS-0120 Rev. 2 (101017) Page 4 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/601 Figure 2: Case Outline and Pin Configuration for JANSR2N7262U & JANSF2N7262U T4-LDS-0120 Rev. 2 (101017) Page 5 of 5