NSS40500UW3 D

NSS40500UW3T2G
40 V, 5.0 A, Low VCE(sat)
PNP Transistor
ON Semiconductor’s e2 PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
• This is a Pb−Free Device
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−40 VOLTS
5.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 65 mW
COLLECTOR
3
1
BASE
MAXIMUM RATINGS (TA = 25°C)
Rating
Collector-Emitter Voltage
Symbol
Max
Unit
VCEO
−40
Vdc
Collector-Base Voltage
VCBO
−40
Vdc
Emitter-Base Voltage
VEBO
−7.0
Vdc
IC
−5.0
Adc
Collector Current − Peak
ICM
−6.0
A
Electrostatic Discharge
ESD
HBM Class 3B
MM Class C
Collector Current − Continuous
THERMAL CHARACTERISTICS
2
EMITTER
3
WDFN3
CASE 506AU
2
1
MARKING DIAGRAM
VA M
G
1
VA = Specific Device Code
M = Date Code
G
= Pb−Free Package
Characteristic
Symbol
Max
Unit
Total Device Dissipation, TA = 25°C
Derate above 25°C
PD (Note 1)
875
7.0
mW
mW/°C
RqJA (Note 1)
143
°C/W
PD (Note 2)
1.5
11.8
W
mW/°C
Device
Package
Shipping†
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 2)
85
°C/W
NSS40500UW3T2G
WDFN3
(Pb−Free)
3000/
Tape & Reel
Thermal Resistance,
Junction−to−Lead #1
RqJL (Note 2)
23
°C/W
Total Device Dissipation
(Single Pulse < 10 sec)
PDsingle
(Notes 2 & 3)
3.0
W
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
TJ, Tstg
−55 to
+150
°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation, TA = 25°C
Derate above 25°C
Junction and Storage
Temperature Range
ORDERING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ 100 mm2, 1 oz copper traces.
2. FR−4 @ 500 mm2, 1 oz copper traces.
3. Thermal response.
© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 2
1
Publication Order Number:
NSS40500UW3/D
NSS40500UW3T2G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
−40
−
−
−40
−
−
−7.0
−
−
−
−
−0.1
−
−
−0.1
250
250
220
180
150
−
−
300
250
200
−
−
−
−
−
−
−
−
−
−
−0.010
−0.065
−0.110
−0.190
−0.310
−0.215
−0.015
−0.080
−0.130
−0.220
−0.340
−0.260
−
−0.76
−0.900
−
−0.80
−0.900
100
−
−
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = −40 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = −7.0 Vdc)
IEBO
Vdc
Vdc
Vdc
mAdc
mAdc
ON CHARACTERISTICS
hFE
DC Current Gain (Note 4)
(IC = −10 mA, VCE = −2.0 V)
(IC = −500 mA, VCE = −2.0 V)
(IC = −1.0 A, VCE = −2.0 V)
(IC = −2.0 A, VCE = −2.0 V)
(IC = −3.0 A, VCE = −2.0 V)
Collector −Emitter Saturation Voltage (Note 4)
(IC = −0.1 A, IB = −0.010 A) (Note 5)
(IC = −1.0 A, IB = −0.100 A)
(IC = −1.0 A, IB = −0.010 A)
(IC = −2.0 A, IB = −0.020 A)
(IC = −3.0 A, IB = −0.030 A)
(IC = −4.0 A, IB = −0.400 A)
VCE(sat)
Base −Emitter Saturation Voltage (Note 4)
(IC = −1.0 A, IB = −0.01 A)
VBE(sat)
Base −Emitter Turn−on Voltage (Note 4)
(IC = −2.0 A, VCE = −3.0 V)
VBE(on)
Cutoff Frequency
(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)
fT
V
V
V
MHz
Input Capacitance (VEB = −0.5 V, f = 1.0 MHz)
Cibo
−
475
pF
Output Capacitance (VCB = −3.0 V, f = 1.0 MHz)
Cobo
−
150
pF
Delay (VCC = −30 V, IC = 750 mA, IB1 = 15 mA)
td
−
−
70
ns
Rise (VCC = −30 V, IC = 750 mA, IB1 = 15 mA)
tr
−
−
150
ns
Storage (VCC = −30 V, IC = 750 mA, IB1 = 15 mA)
ts
−
−
600
ns
Fall (VCC = −30 V, IC = 750 mA, IB1 = 15 mA)
tf
−
−
160
ns
SWITCHING CHARACTERISTICS
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
5. Guaranteed by design but not tested.
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2
NSS40500UW3T2G
3.5
VCE(sat), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
0.4
0.3
VCE(sat) = 150°C
0.2
25°C
0.1
−55°C
0
0.001
0.01
0.1
1.0
10
1.0
0.5
25°C
0.01
0.1
1.0
10
1.4
650
VBE(sat), BASE EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
150°C
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
150°C (2 V)
550
25°C (5 V)
450
25°C (2 V)
350
−55°C (5 V)
250
−55°C (2 V)
150
VBE(on), BASE EMITTER TURN−ON VOLTAGE (V)
VCE(sat) = −55°C
1.5
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
150°C (5 V)
0.01
0.1
1
1.2
1.0
−55°C
0.8
25°C
0.6
150°C
0.4
0.2
0.001
10
0.01
0.1
10
1.0
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs.
Collector Current
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
1.1
VCE = −1.0 V
−55°C
0.9
0.8
25°C
0.7
0.6
0.5
150°C
0.4
0.3
0.2
0.1
0.001
2.0
IC, COLLECTOR CURRENT (A)
750
1.0
2.5
IC, COLLECTOR CURRENT (A)
850
50
0.001
IC/IB = 100
3.0
0
0.001
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE(sat), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
0.5
0.01
0.1
1.0
10
1.0
0.8
IC = 500 mA
100 mA 300 mA
10 mA
0.6
0.4
0.2
0
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (A)
IB, BASE CURRENT (mA)
Figure 5. Base Emitter Turn−On Voltage vs.
Collector Current
Figure 6. Saturation Region
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3
100
NSS40500UW3T2G
160
450
Cobo, OUTPUT CAPACITANCE (pF)
Cibo (pF)
400
350
300
250
200
150
0
1.0
2.0
3.0
4.0
5.0
Cobo (pF)
140
120
100
80
60
40
6.0
0
5.0
10
15
20
25
30
VEB, EMITTER BASE VOLTAGE (V)
VCB, COLLECTOR BASE VOLTAGE (V)
Figure 7. Input Capacitance
Figure 8. Output Capacitance
10
1
IC (A)
Cibo, INPUT CAPACITANCE (pF)
500
1.0 mS
10 mS
100 mS
1.0 S
0.1
0.01
0.1
Thermal
Limit
1
10
VCE (Vdc)
Figure 9. PNP Safe Operating Area
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4
100
35
NSS40500UW3T2G
PACKAGE DIMENSIONS
WDFN3
CASE 506AU
ISSUE O
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994 .
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS
MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS
THE TERMINALS.
A
B
PIN ONE
REFERENCE
2X
0.10 C
2X
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
DIM
A
A1
A3
b
D
D2
E
E2
e
K
L
E
MIN
0.70
0.00
0.25
1.40
0.90
0.35
MILLIMETERS
NOM
MAX
0.75
0.80
0.05
0.20 REF
0.30
0.35
2.00 BSC
1.50
1.60
2.00 BSC
1.00
1.10
1.30 BSC
0.35 REF
0.40
0.45
MIN
0.028
0.000
INCHES
NOM
0.030
0.008 REF
0.012
0.079 BSC
0.055
0.059
0.079 BSC
0.035
0.039
0.051 BSC
0.014 REF
0.014
0.016
0.010
MAX
0.031
0.002
0.014
0.063
0.043
0.018
TOP VIEW
0.10 C
SOLDERING FOOTPRINT*
A
0.10 C
1.300
2X
8X
0.08 C
SEATING
PLANE
(A3)
SIDE VIEW
A1
0.400
0.600
C
0.250
D2
e
2
1
2X
1.100
e/2
0.300
L
0.400
K
0.275
1.600
E2
3
3X
b
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
0.10 C A B
0.05 C
NOTE 3
BOTTOM VIEW
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
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NSS40500UW3/D