20 V, 1.0 A, Low V CE(sat) NPN Transistor

NSS20101J, NSV20101J
20 V, 1.0 A, Low VCE(sat)
NPN Transistor
ON Semiconductor’s e2 PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
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20 VOLTS, 1.0 AMPS
NPN LOW VCE(sat) TRANSISTOR
SC−89
CASE 463C
STYLE 1
COLLECTOR
3
1
BASE
Features
• NSV Prefix for Automotive and Other Applications Requiring
•
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant*
2
EMITTER
MARKING DIAGRAM
3
Collector
AA MG
G
1
Base
2
Emitter
AA = Specific Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Package
Shipping†
NSS20101JT1G
SC−89
(Pb−Free)
3,000 /
Tape & Reel
NSV20101JT1G
SC−89
(Pb−Free)
3,000 /
Tape & Reel
Device
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 3
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSS20101J/D
NSS20101J, NSV20101J
MAXIMUM RATINGS (TA = 25°C)
Symbol
Max
Unit
Collector-Emitter Voltage
Rating
VCEO
20
Vdc
Collector-Base Voltage
VCBO
40
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
Collector Current − Continuous
IC
1.0
A
Collector Current − Peak
ICM
2.0
A
Electrostatic Discharge
ESD
HBM Class 3B
MM Class C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1)
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 1)
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 2)
Junction and Storage Temperature Range
TJ, Tstg
Max
Unit
255
2.0
mW
mW/°C
490
300
2.4
415
−55 to +150
°C/W
mW
mW/°C
°C/W
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. FR−4 @ 100 mm2, 1 oz. copper traces.
2. FR−4 @ 500 mm2, 1 oz. copper traces.
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2
NSS20101J, NSV20101J
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
V(BR)CBO
Emitter−Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 5.0 Vdc)
IEBO
Vdc
20
Vdc
40
Vdc
6.0
mAdc
0.1
mAdc
0.1
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 10 mA, VCE = 2.0 V)
(IC = 100 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
hFE
Collector −Emitter Saturation Voltage (Note 3)
(IC = 10 mA, IB = 0.5 mA)
(IC = 0.10 A, IB = 0.010 A)
(IC = 0.5 A, IB = 0.050 A)
(IC = 1.0 A, IB = 0.1 A)
VCE(sat)
Base −Emitter Saturation Voltage (Note 3)
(IC = 0.5 A, IB = 50 mA)
VBE(sat)
Base −Emitter Turn−on Voltage (Note 3)
(IC = 0.5 A, VCE = 2.0 V)
VBE(on)
Cutoff Frequency
(IC = 100 mA, VCE = 2.0 V, f = 100 MHz)
200
200
150
100
500
V
0.015
0.040
0.115
0.220
V
1.1
V
0.90
fT
MHz
350
Input Capacitance (VEB = 0.5 V, f = 1.0 MHz)
Cibo
40
pF
Output Capacitance (VCB = 4.0 V, f = 1.0 MHz)
Cobo
6
pF
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
TYPICAL CHARACTERISTICS
600
150°C
0.35
hFE, DC CURRENT GAIN
PD, POWER DISSIPATION (W)
0.40
0.30
0.25
Note 2
0.20
Note 1
0.15
0.10
0.05
0
0
20
40
60
80
100
120
140
400
25°C
300
−55°C
200
100
0
160
VCE = 2 V
500
0.001
0.01
0.1
1
TJ, JUNCTION TEMPERATURE (°C)
IC, COLLECTOR CURRENT (A)
Figure 1. Power Derating
Figure 2. DC Current Gain
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3
10
NSS20101J, NSV20101J
TYPICAL CHARACTERISTICS
1
150°C
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VCE = 4 V
500
400
25°C
300
−55°C
200
100
0
0.001
0.01
0.1
1
10
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
150°C
−55°C
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
1.4
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V)
Figure 5. Collector−Emitter Saturation Voltage
IC/IB = 50
1.2
−55°C
25°C
150°C
0.4
0.2
0.001
0.001
0.01
0.1
1
10
Figure 4. Collector−Emitter Saturation Voltage
0.01
0.6
IC/IB = 10
Figure 3. DC Current Gain
0.1
0.8
0.01
IC, COLLECTOR CURRENT (A)
25°C
1.0
−55°C
IC, COLLECTOR CURRENT (A)
IC/IB = 20
0.001
25°C
0.1
0.001
1
0.001
150°C
0.01
VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
600
0.1
1
10
1.4
IC/IB = 10
1.2
1.0
−55°C
0.8
25°C
0.6
150°C
0.4
0.2
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 6. Base−Emitter Saturation Voltage
1.6
VCE = 2 V
1.4
1.2
1.0
−55°C
0.8
25°C
0.6
150°C
0.4
0.2
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 7. Base−Emitter Saturation Voltage
Figure 8. Base−Emitter Voltage
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4
10
10
NSS20101J, NSV20101J
TYPICAL CHARACTERISTICS
60
Cibo, INPUT CAPACITANCE (pF)
IC = 2 A
IC = 1 A
IC = 0.5 A
0.1
IC = 0.1 A
IC = 50 mA
0.01
0.0001
0.001
0.01
0.1
10
0
1
2
3
4
5
6
Figure 10. Input Capacitance
8
6
4
2
10
15
20
25
30
35
7
TJ = 25°C
fTEST = 1 MHz
VCE = 2 V
350
300
250
200
150
100
50
0
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 11. Output Capacitance
Figure 12. Current Gain Bandwidth Product
10
TJ = 25°C
100 ms
1
1 ms
0.5 ms
Thermal Limit
0.1
0.01
10 ms
0.1
1
10
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 13. Safe Operating Area
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5
8
400
VCB, COLLECTOR−BASE VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
Cobo, OUTPUT CAPACITANCE (pF)
20
Figure 9. Saturation Region
TJ = 25°C
fTEST = 1 MHz
5
30
VEB, BASE EMITTER VOLTAGE (V)
10
0
40
IB, BASE CURRENT (A)
12
0
TJ = 25°C
fTEST = 1 MHz
50
0
1
fTau, CURRENT GAIN BANDWIDTH PRODUCT
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
1
100
1
NSS20101J, NSV20101J
PACKAGE DIMENSIONS
SC−89 3 LEAD
CASE 463C−03
ISSUE C
A
−X−
3
1
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 463C−01 OBSOLETE, NEW STANDARD 463C−02.
B −Y− S
K
G
2 PL
D
0.08 (0.003)
M
C
M
DIM
A
B
C
D
G
H
J
K
L
M
N
S
3 PL
X Y
N
J
−T−
MILLIMETERS
MIN
NOM MAX
1.50
1.60
1.70
0.75
0.85
0.95
0.60
0.70
0.80
0.23
0.28
0.33
0.50 BSC
0.53 REF
0.10
0.15
0.20
0.30
0.40
0.50
1.10 REF
−−−
−−−
10 _
−−−
−−−
10 _
1.50
1.60
1.70
INCHES
NOM MAX
0.063 0.067
0.034 0.040
0.028 0.031
0.011 0.013
0.020 BSC
0.021 REF
0.004 0.006 0.008
0.012 0.016 0.020
0.043 REF
−−−
−−−
10 _
−−−
−−−
10 _
0.059 0.063 0.067
MIN
0.059
0.030
0.024
0.009
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SEATING
PLANE
SOLDERING FOOTPRINT*
H
H
L
G
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NSS20101J/D
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