30 VOLTS 2.0 AMPS NPN TRANSISTOR

MMBT489LT1G
High Current Surface Mount
NPN Silicon Switching
Transistor for Load
Management in
Portable Applications
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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30 VOLTS, 2.0 AMPERES
NPN TRANSISTOR
Compliant
COLLECTOR
3
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
VCEO
30
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
1.0
A
ICM
2.0
A
Symbol
Max
Unit
310
2.5
mW
mW/°C
403
°C/W
710
5.7
mW
mW/°C
Collector Current − Continuous
Collector Current − Peak
1
BASE
2
EMITTER
3
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation (Note 1)
@TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
(Note 1)
Total Device Dissipation (Note 2)
@TA = 25°C
Derate above 25°C
PD
RqJA
PD
Thermal Resistance, Junction−to−Ambient
(Note 2)
RqJA
176
°C/W
Total Device Dissipation (Single Pulse < 10 s)
PDsingle
575
mW
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 X 1.0 inch Pad
1
SOT−23 (TO−236)
CASE 318
STYLE 6
2
MARKING DIAGRAM
N3 M G
G
1
N3 = Specific Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMBT489LT1G
SOT−23
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 5
1
Publication Order Number:
MMBT489LT1/D
MMBT489LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
30
−
50
−
5.0
−
−
0.1
−
0.1
−
0.1
300
300
200
−
900
−
−
−
−
0.200
0.125
0.075
−
1.1
−
1.1
100
−
−
15
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
Collector−Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
V(BR)CBO
Emitter−Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
Collector−Emitter Cutoff Current
(VCES = 30 Vdc)
ICES
Emitter Cutoff Current
(VEB = 4.0 Vdc)
IEBO
Vdc
Vdc
Vdc
mAdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 50 mA, VCE = 5.0 V)
(IC = 0.5 A, VCE = 5.0 V)
(IC = 1.0 A, VCE = 5.0 V)
hFE
Collector −Emitter Saturation Voltage (Note 3)
(IC = 1.0 A, IB = 100 mA)
(IC = 0.5 A, IB = 50 mA)
(IC = 0.1 A, IB = 1.0 mA)
VCE(sat)
Base −Emitter Saturation Voltage (Note 3)
(IC = 1.0 A, IB = 0.1 A)
VBE(sat)
Base −Emitter Turn−on Voltage (Note 3)
(IC = 1.0 mA, VCE = 2.0 V)
VBE(on)
Cutoff Frequency
(IC = 100 mA, VCE = 5.0 V, f = 100 MHz
fT
Output Capacitance
(f = 1.0 MHz)
Cobo
V
V
V
MHz
pF
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%
1.0
1.0
0.9
0.7
0.8
0.7
IC = 1 A
0.6
VCE (V)
VCE (V)
0.9
IC = 2 A
0.8
0.5
0.4
0.3
0
0.5
Ic/Ib = 100
0.4
0.3
IC = 500 mA
0.2
0.1
0.6
0.1
IC = 100 mA
0.001
Ic/Ib = 10
0.2
0.01
Ib (A)
0.1
0
0.2
0.001
0.01
0.1
Ic (A)
Figure 1. VCE versus Ib
Figure 2. VCE versus Ic
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2
1
2
MMBT489LT1G
800
700
1.2
VCE = 5 V
VCE = 5 V
+125°C
1.0
600
VBE(on) (V)
+25°C
hFE
500
400
300
−55°C
−55°C
0.8
0.6
0.4
+25°C
+125°C
200
0.2
100
0
0.001
0.01
0.1
1
0
2
0.001
0.01
Ic (A)
Figure 3. hFE versus Ic
2
IC COLLECTOR CURRENT (A)
10
1.0
Ic/Ib = 10
0.8
VBE (V)
1
Figure 4. VBE(on) versus Ic
1.2
Ic/Ib = 100
0.6
0.4
0.2
0
0.1
Ic (A)
0.001
0.01
0.1
1
1
1 ms
0.01
2
10 ms
100 ms
0.1
1s
SINGLE PULSE Tamb = 25°C
0.1
1
Ic (A)
0.2
100
VCE (V)
Figure 5. VBE(sat) versus Ic
0.5
dc
10
Figure 6. Safe Operating Area
0.1
1.0E+00
0.05
0.02
D = 0.01
Rthja , (t)
1.0E-01
1.0E-02
r(t)
1.0E-03
1E-05
0.0001
0.001
0.01
0.1
t, TIME (sec)
1.0
Figure 7. Normalized Thermal Response
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3
10
100
1000
MMBT489LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
2
e
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
q
A
L
A1
L1
VIEW C
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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4
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MMBT489LT1/D
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