Amplifier Transistor PNP

MPSL51
Amplifier Transistor
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
−100
Vdc
Collector −Base Voltage
VCBO
−100
Vdc
Emitter −Base Voltage
VEBO
−4.0
Vdc
Collector Current — Continuous
IC
−600
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
TJ, Tstg
−55 to +150
°C
Symbol
Max
Unit
Thermal Resistance, Junction to
Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
Operating and Storage Junction
Temperature Range
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TO−92 (TO−226AA)
CASE 29−11
STYLE 1
1
2
3
COLLECTOR
3
THERMAL CHARACTERISTICS
Characteristic
2
BASE
1
EMITTER
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
Collector −Emitter Breakdown Voltage(1)
(IC = −1.0 mAdc, IB = 0)
V(BR)CEO
−100
—
Vdc
Collector −Base Breakdown Voltage
(IC = −100 mAdc, IE = 0)
V(BR)CBO
−100
—
Vdc
Emitter −Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
V(BR)EBO
−4.0
—
Vdc
Collector Cutoff Current
(VCB = −50 Vdc, IE = 0)
ICBO
—
−1.0
μAdc
Emitter Cutoff Current
(VEB = −3.0 Vdc, IC = 0)
IEBO
—
−100
nAdc
Characteristic
OFF CHARACTERISTICS
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 3
1
Publication Order Number:
MPSL51/D
MPSL51
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
ON
Symbol
Min
Max
Unit
hFE
40
250
—
—
—
−0.25
−0.30
—
—
−1.2
−1.2
fT
60
—
MHz
Cobo
—
8.0
pF
hfe
20
—
—
CHARACTERISTICS(1)
DC Current Gain(1)
(IC = −50 mAdc, VCE = −5.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
VBE(sat)
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current −Gain — Bandwidth Product
(IC = −10 mAdc, VCE = −10 Vdc, f = 20 MHz)
Output Capacitance
(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)
Small−Signal Current Gain
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
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2
MPSL51
200
150
h FE, CURRENT GAIN
TJ = 125°C
100
25°C
70
50
−55 °C
VCE = − 1.0 V
VCE = − 5.0 V
30
20
0.2
0.1
0.3
0.5
1.0
2.0
3.0
5.0
IC, COLLECTOR CURRENT (mA)
20
10
30
50
100
10
20
50
1.0
0.9
0.8
0.7
0.6
IC = 1.0 mA
0.5
10 mA
30 mA
100 mA
0.4
0.3
0.2
0.1
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
IB, BASE CURRENT (mA)
2.0
5.0
Figure 2. Collector Saturation Region
103
IC, COLLECTOR CURRENT (A)
μ
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
102
VCE = 30 V
IC = ICES
101
TJ = 125°C
100
75°C
10−1
10−2
REVERSE
25°C
10−3
0.3
0.2
FORWARD
0.1
0
0.1
0.2 0.3 0.4 0.5
VBE, BASE−EMITTER VOLTAGE (VOLTS)
Figure 3. Collector Cut−Off Region
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3
0.6
0.7
MPSL51
1.0
0.9
θV, TEMPERATURE COEFFICIENT (mV/ °C)
TJ = 25°C
V, VOLTAGE (VOLTS)
0.8
0.7
VBE(sat) @ IC/IB = 10
0.6
0.5
0.4
0.3
0.2
VCE(sat) @ IC/IB = 10
0.1
0
0.1
0.2 0.3 0.5
1.0 2.0 3.0 5.0
10
20 30
IC, COLLECTOR CURRENT (mA)
50
2.5
1.5
1.0
0.5
θVC for VCE(sat)
0
−0.5
−1.0
−1.5
θVB for VBE(sat)
−2.0
−2.5
0.1
100
TJ = − 55°C to 135°C
2.0
0.2 0.3 0.5 1.0 2.0 3.0 5.0
10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
100
70
50
C, CAPACITANCE (pF)
VCC
−30 V
10.2 V
100
10 μs
INPUT PULSE
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
0.25 μF
3.0 k
RC
Vout
RB
5.1 k
Vin
100
TJ = 25°C
30
Cibo
20
10
7.0
5.0
Cobo
3.0
1N914
2.0
1.0
0.2
Values Shown are for IC @ 10 mA
2.0 3.0
5.0 7.0
0.5 0.7 1.0
VR, REVERSE VOLTAGE (VOLTS)
0.3
Figure 6. Switching Time Test Circuit
1000
700
500
10
20
Figure 7. Capacitances
2000
IC/IB = 10
TJ = 25°C
tr @ VCC = 120 V
300
1000
700
500
tr @ VCC = 30 V
200
t, TIME (ns)
t, TIME (ns)
100
Figure 5. Temperature Coefficients
VBB
+8.8 V
Vin
50
100
70
50
10
0.2 0.3 0.5
td @ VBE(off) = 1.0 V
VCC = 120 V
1.0
2.0 3.0 5.0
10
20 30
tf @ VCC = 120 V
tf @ VCC = 30 V
200
ts @ VCC = 120 V
100
70
50
30
20
300
IC/IB = 10
TJ = 25°C
30
50
100
20
0.2 0.3 0.5
200
1.0
2.0 3.0 5.0
10
20 30
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 8. Turn−On Time
Figure 9. Turn−Off Time
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4
50
100
200
MPSL51
PACKAGE DIMENSIONS
TO−92 (TO−226AA)
CASE 29−11
ISSUE AL
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
P
L
SEATING
PLANE
K
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
D
X X
G
J
H
V
C
1
N
SECTION X−X
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−−
0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
N
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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